Atomic, Molecular and Optical Physics Commons^™

Analysis And Application Of The Bi-Directional Scatter Distribution Function Of Photonic Crystals, Robert B. Lamott

Theses and Dissertations

Photonic crystals (PCs) are periodic structures built from materials with different refractive indices repeated at sub-wavelength intervals, which results in unusual optical characteristics, including narrowband laser protection, and zero reflectance and high absorption anomalies. Most of the research into the optical properties of PCs has concentrated only on the small range of wavelengths and angles where these effects occur. To better understand where all light leaving a PC is scattered, a Complete Angle Scatter Instrument was used to analyze the scatter from three Guided Mode Resonance Filters designed for laser protection. In the plane of incidence, measurements of the scatter …

Experimental Study Of The Response Of Semiconductor Detectors For Edxrf Analysis., Sunil Kumar Valaparla

Open Access Theses & Dissertations

This present work relates to the study and characterization of the response function of an energy-dispersive x-ray spectrometer. The problems of energy, efficiency and resolution calibration of the system operating in the energy (5-60 keV) range are discussed. We present the operation characteristics of the portable pyro-electric x-ray generator (COOL-X) and the application of the calibrated response spectrum in the elemental analysis using X-ray Fluorescence (XRF).

We study the response of the Si(Li)-Pin XR-100CR semiconductor detector to low energy photons. The photopeak efficiency was determined experimentally by using radioisotopes and compared against a theoretical efficiency curve. The efficiency for gamma …

Computational Modeling Studies Of The Structures And Properties Of Organotin(Iv) And Stannyl-Thioether Systems With Comparisons To X-Ray Crystallography, Michelle R. Stem Joseph

Open Access Theses & Dissertations

Controlling the toxic effects of organotin(IV) compounds involves engineering the structure of the molecules to optimize their properties. Molecular engineering, coupled with improved capabilities to generate reliable computational optimization models (COMs), will enable researchers to have greater success at harnessing the highly specific cytotoxicity of organotins. For example, as the thio_n ligand phenyl groups were replaced with Cl atoms, the S-Sn intramolecularity was strengthened, the bond distance decreased, and the stannyl tetrahedral structure was deformed from its triphenyl conformation. With each substitution, conformation deformations lowered the damaging bioactivity levels of thio_n. Bonding various ligands to organotin(IV) compounds …

Yttrium And Hydrogen Superstructure And Correlation Of Lattice Expansion And Proton Conductivity In The Bazr0.9y0.1o2.95 Proton Conductor, A. Braun, A. Ovalle, V. Pomjakushin, A. Cervellino, S. Erat, Wayne C. Stolte, T. Graule

Chemistry and Biochemistry Faculty Research

Bragg reflections in Y-resonant x-ray diffractograms of BaZr_0.9Y_0.1O_2.95 (BZY10) reveal that Y is organized in a superstructure. Comparison with neutron diffraction superstructure reflections in protonated/deuterated BZY10 suggests that both superstructures are linked, and that protons move in the landscape imposed by the Y. The thermal lattice expansion decreases abruptly for protonated BZY10 at T≥648±20 K, coinciding with the onset of lateral proton diffusion and suggesting a correlation of structural changes and proton conductivity. The chemical shift in the Y L₁-shell x-ray absorption spectra reveals a reduction from Y³⁺ toward Y²⁺ upon …

Activation Energy Of Surface Diffusion And Terrace Width Dynamics During The Growth Of In (4×3) On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The nucleation and growth of indium on a vicinal Si (100) - (2×1) surface at high temperature by femtosecond pulsed laser deposition was investigated by in situ reflection high energy electron diffraction (RHEED). RHEED intensity relaxation was observed for the first ∼2 ML during the growth of In (4×3) by step flow. From the temperature dependence of the rate of relaxation, an activation energy of 1.4±0.2 eV of surface diffusion was determined. The results indicate that indium small clusters diffused to terrace step edges with a diffusion frequency constant of (1.0±0.1) × 10¹¹ s^-1. The RHEED specular …

Nonthermal Laser-Induced Formation Of Crystalline Ge Quantum Dots On Si(100), M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The effects of laser-induced electronic excitations on the self-assembly of Ge quantum dots on Si (100) - (2×1) grown by pulsed laser deposition are studied. Electronic excitations due to laser irradiation of the Si substrate and the Ge film during growth are shown to decrease the roughness of films grown at a substrate temperature of ∼120 °C. At this temperature, the grown films are nonepitaxial. Electronic excitation results in the formation of an epitaxial wetting layer and crystalline Ge quantum dots at ∼260 °C, a temperature at which no crystalline quantum dots form without excitation under the same deposition conditions. …

Formation Of In- (2×1) And In Islands On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The growth of indium on a vicinal Si (100) - (2×1) surface at room temperature by femtosecond pulsed laser deposition (fsPLD) was investigated by in situ reflection high-energy electron diffraction (RHEED). Recovery of the RHEED intensity was observed between laser pulses and when the growth was terminated. The surface diffusion coefficient of deposited In on initial two-dimensional (2D) In- (2×1) layer was determined. As growth proceeds, three-dimensional In islands grew on the 2D In- (2×1) layer. The RHEED specular profile was analyzed during film growth, while the grown In islands were examined by ex situ atomic force microscopy. The full …

Growth Of Ge Quantum Dots On Si(100)-(2×1) By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Self-assembled germanium quantum dots (QDs) were grown on Si(100)-(2×1) by pulsed laser deposition. In situ reflection-high energy electron diffraction (RHEED) and postdeposition atomic force microscopy are used to study the growth of the QDs. Several films of different thicknesses were grown at a substrate temperature of 400 °C using a Q-switched Nd:yttrium aluminum garnet laser (λ= 1064 nm, 40 ns pulse width, 23 J/cm ² fluence, and 10 Hz repetition rate). At low film thicknesses, hut clusters that are faceted by different planes, depending on their height, are observed after the completion of the wetting layer. With increasing film thickness, …

Melting And Solidification Study Of As-Deposited And Recrystallized Bi Thin Films, M. K. Zayed, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Melting and solidification of as-deposited and recrystallized Bi crystallites, deposited on highly oriented 002-graphite at 423 K, were studied using reflection high-energy electron diffraction (RHEED). Films with mean thickness between 1.5 and 33 ML (monolayers) were studied. Ex situ atomic force microscopy was used to study the morphology and the size distribution of the formed nanocrystals. The as-deposited films grew in the form of three-dimensional crystallites with different shapes and sizes, while those recrystallized from the melt were formed in nearly similar shapes but different sizes. The change in the RHEED pattern with temperature was used to probe the melting …

Self-Assembly Of Ge Quantum Dots On Si(100)- 2×1 By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Self-assembled Ge quantum dots are grown on Si(100)- 2×1 by pulsed laser deposition. The growth is studied by in situ reflection high-energy electron diffraction and postdeposition atomic force microscopy. After the completion of the wetting layer, transient hut clusters, faceted by different planes, are observed. When the height of these clusters exceeded a certain value, the facets developed into {305} planes. Some of these huts become {305}-faceted pyramids as the film mean thickness was increased. With further thickness increase, dome clusters developed on the expense of these pyramids. © 2005 American Institute of Physics. [DOI: 10.1063/1.1949285]

Anisotropy Of Exchange Stiffness And Its Effect On The Properties Of Magnets, K. D. Belashchenko

Kirill Belashchenko Publications

Using the spin-spiral formulation of the tight-binding linear muffin-tin orbital method, the principal components of the exchange stiffness tensor are calculated for typical hard magnets including tetragonal CoPt-type and hexagonal YCo₅ alloys. The exchange stiffness is strongly anisotropic in all studied alloys. This anisotropy makes the domain wall surface tension anisotropic. Competition between this anisotropic surface tension and magnetostatic energy controls the formation and dynamics of nanoscale domain structures in hard magnets. Anisotropic domain wall bending is described in detail from the general point of view and with application to cellular Sm–Co magnets. It is shown that the repulsive …

Optical Characterization And Modeling Of Compositionally Matched Indium Arsenide-Antimonide Bulk And Multiple Quantum Well Semiconductors, Scott C. Phillips

Theses and Dissertations

Indium arsenide-antimonide (InAsSb) semiconductors have been determined to emit in the 3-5 micrometer range, the window of interest for countermeasures against infrared electro-optical threats. This experiment set out to cross the bulk to quantum well characterization barrier by optically characterizing two sets of compositionally matched type I quantum well and bulk well material samples. Absorption measurements determined the band gap energy of the bulk samples and the first allowed subband transition for the quantum wells. By collecting absorption spectra at different temperatures, the trend of the energy transitions was described by fitting a Varshni equation to them. The expected result …

Field Emission Based Sensors Using Carbon Nanotubes, Changkun Dong

Physics Theses & Dissertations

A number of sensitive applications would be greatly benefited by the development of better cold cathodes that employ the electron field emission process. Among the many kinds of field emitters that could be tried, carbon nanotubes (CNT) have a number of distinct advantages because of their unique geometrical structure, chemical inertness, mechanical stiffness, and high thermal and electrical conductivities. This dissertation describes research in which CNT cathodes were fabricated and their emission characteristics were measured.

Multi-walled carbon nanotubes (MWNT) were grown by chemical vapor deposition (CVD) on various substrates: Ni and Hastelloy gauze, 304 stainless steel (SS) plates, and Ni-coated …

Investigation Of The Corrosion Of Steel By Lead-Bismuth Eutectic (Lbe) Using Scanning Electron Microscopy And X-Ray Photoelectron Spectroscopy, Daniel Koury

UNLV Theses, Dissertations, Professional Papers, and Capstones

Lead Bismuth Eutectic (LBE) has been proposed for use in programs for accelerator transmutation of waste. LBE is the leading candidate material as a spallation target and an option for the sub-critical blanket coolant. The corrosion of 316 and 316L stainless steels by LBE has been studied using UNLV's facilities for Scanning Electron Microscopy (SEM) and X-ray Photoelectron Spectroscopy (XPS). We have compared exposed and unexposed samples and studied the differences. Some amount of surface contamination is present on the samples and has been removed by ionbeam etching. The unexposed samples reveal typical stainless steel characteristics: a chromium oxide passivation …

Atomic Hydrogen Cleaning Of Inp(100): Electron Yield And Surface Morphology Of Negative Electron Affinity Activated Surfaces, M. A. Hafez, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Atomic hydrogen cleaning of the InP(100) surface has been investigated using quantitative reflection high-energy electron diffraction. The quantum efficiency of the surface when activated to negative electron affinity was correlated with surface morphology. The electron diffraction patterns showed that hydrogen cleaning is effective in removing surface contaminants, leaving a clean, ordered, and (2×4)-reconstructed surface. After activation to negative electron affinity, a quantum efficiency of ∼6% was produced in response to photoactivation at 632 nm. Secondary electron emission from the hydrogen-cleaned InP(100)-(2×4) surface was measured and correlated to the quantum efficiency. The morphology of the vicinal InP(100) surface was investigated using …

Optical Investigation Of Molecular Beam Epitaxy AlXGa1-XN To Determine Material Quality, Judith L. Mcfall

Theses and Dissertations

The purpose of this research was to determine the quality of AIGaN samples with various mole fractions of aluminum doped with silicon. The samples utilized for this study were composed of an AIN buffer layer sandwiched between the sapphire substrate and AIGaN epilayer grown by molecular beam epitaxy (MBE). Cathodoluminescence (CL) and photoluminescence (PL) were employed to determine the mole fraction of aluminum in each sample. These techniques also gave insight into the material's nonuniformity, defects, and impurities. CL was run at 4 different beam energies (2,5,10, & 15 keV) with four different currents (1,10,50, & 90 µA) for the …

Electrical Characterization Of Ion-Implanted 4h-Silicon Carbide, Christian P. Morath

Theses and Dissertations

Electrical characterization has been performed on ion-implanted p-type 4H-SiC to assess the activation efficiency and implantation-related damage recrystallization with the intention of developing an implantation/annealing scheme. Low doped (Na - Nd = 5x10(exp 15)/cu cm) epitaxial p-type layers grown by MOCVD were implanted with Al or B at doses ranging from 1x10(exp 13) to 1x10(exp 14)/sq cm at room temperature or 500 deg. C. The electrical technique of Temperature Dependent Hall Effect (TDHE) indicated that Al and B act as shallow acceptors 4H-SiC with ionization energies of ^252 and ^285 meV, respectively. The highest activation efficiency for Al and B …

Characterization Of Iron Oxides And Atmospheric Corrosion Of Steel, Sei Jin Oh

Physics Theses & Dissertations

The study of corrosion behavior was performed using three different analytical techniques, which provided information on the formation, development and layering of iron oxides on the corrosion products as a function of atmospheric conditions, exposure time and type of steel. In particular, the protective layer formed on weathering steel was investigated as a function of different amounts of alloying elements in the steel, atmospheric conditions and exposure times. Combined together, the results provided a better understanding of the atmospheric corrosion behavior of steel, and formed a part of database of the atmospheric corrosion characteristics.

Accurate characterization of the iron oxides …

Optical Characterization Of Indium Arsenide Antimonide Semiconductors Grown By Molecular Beam Epitaxy, Michael A. Marciniak

Theses and Dissertations

The material parameters and crystalline quality of undoped, MBE-grown InAs_1-xSb_x nearly lattice-matched to (100) GaSb (-0.617% ≤ Δ a-a ≤ +0.708%) similar to material used for mid-infrared semiconductor lasers were determined by optical characterization. Absorption measurements at temperatures between 6-295 K determined the energy gap and wavelength-dependent absorption coefficient for each sample. The compositional dependence of the energy gap was anomalous when compared to previously reported data, suggesting phase separation existed in the material. The samples were also studied by temperature- and excitation-dependent photoluminescence (PL), which, for the majority of cases, showed only a single band-edge peak, …

Photoluminescence Spectroscopy Of Zinc Germanium Diphosphide (Zngep2), Jack E. Mccrae

Theses and Dissertations

Zinc germanium diphosphide (ZnGeP₂) is a chalcopyrite semiconductor with strong nonlinear optical properties and potential application to Air Force interests. The characteristics of this material have been studied using photoluminescence (PL) spectroscopy. The PL spectrum is dominated by transitions from the conduction band to a deep acceptor level, and features in the spectrum suggest that more than one transition is being observed. The PL is partially polarized, and the degree of polarization appears to differ for each feature in the spectrum. The relative PL intensity of these features are seen to depend upon the wavelength of the excitation …

Design And Performance Evaluation Of A Gas Chromatograph Micromachined In A Single Crystal Silicon Substrate, Rocky R. Reston

Theses and Dissertations

This investigation designed and developed a miniature gas chromatograph (GC) using silicon micromachining techniques. The GC is composed of a miniature sample injector (10 µl sample loop); a 0.9 m long, rectangular-shaped (300 µm width and 10 micrometers height) capillary column coated with a 0.2 µm thick copper phthalocyanine (CuPc) stationary phase; and a dual-detector scheme incorporating a CuPc-coated chemiresistor and a 125 µm diameter thermal conductivity detector bead. Micromachining was employed to fabricate the sample injector interface, the GC column, and the dual-detector cavity. A novel processing technique was developed to sublime the CuPc stationary phase coating on the …

Cathodoluminescence Spectroscopy Of Zinc Germanium Phosphide Zngep2, Michael R. Gregg

Theses and Dissertations

Zinc Germanium Phosphide (ZnGeP₂) is a nonlinear semiconductor suitable for use as a laser tuning element over the two to six micron wavelength range. Although this crystal has been studied in the past, its luminescent properties are not yet well understood. In this present study, ZnGeP₂ has been examined using cathodoluminescence spectroscopy (CL). Specifically, the spectral dependence of the CL was obtained as a function of electron beam energy, beam current and temperature. The resulting CL was found to be polarized with a peak structure that was dependent on the polarization. This peak structure observed by CL …

Calculated Point Defect Properties Of The Intermetallic Compounds Nickel Titanium (Niti) And Iron Titanium (Feti), Russell T. Lutton

Theses and Dissertations

Atomistic simulation with a modified version of the DYNAMO code was used to calculate the point defect properties of the intermetallic compounds nickel titanium and iron titanium. The calculated energies are believed to be experimentally accurate to within +/- 0.1 eV. Vacant Ni or Fe lattice sites were preferred and had energies of 6.356 eV for NiTi and 5.899 eV for FeTi. Removing a Ti atom resulted in a neighboring antisite defect caused by migration of a Ni or Fe atom into the vacant Ti site. These configurations had energies of 7.024 eV for NiTi and 6.336 eV for FeTi. …

On The Interaction Of Aluminium And Iron Calcium Borate Glasses And Its Effect On The Properties Of Their Composites, Sherif K. Arif

Archived Theses and Dissertations

No abstract provided.

A Study Of Aluminium-Lead Borate Glass Composite Materials, Aziza Nour El-Din Ragai

Archived Theses and Dissertations

No abstract provided.

Molecular Vibrations Of Tetrahedral Systems With Application To Fused Silica, Leila Sado Balloomal

Archived Theses and Dissertations

No abstract provided.

X-Ray Diffraction And Electron Microscopy Studies Of Glasses Containing Antimony, Sadek Momtaz Tadross

Archived Theses and Dissertations

No abstract provided.

Investigation Of The Platinum-Rich Portion Of The Platinum-Tantalum Phase Diagram, Bob Dean Browning

Theses and Dissertations

The Pt-Ta binary system was investigated at two isotherms;1000°C and 1500°C, and at eleven alloy compositions in the range of 50 to 100 atomic percent platinum. The alloys were examined by x-ray diffraction and metallography. Three intermetallic compounds, Pt₂Ta, Pt₃Ta, and Pt₄Ta were found to exist in this composition range. The Pt₄Ta intermetallic appeared only at the 1500°C isotherm. Platinum dissolved tantalum substitutionally to 90 atomic percent at 1500 °C and to approximately 80 atomic percent at 1000 °C.