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Articles 181 - 210 of 236

Full-Text Articles in Atomic, Molecular and Optical Physics

Quantitative Study Of Spin-Flip Co-Tunneling Transport In A Quantum Dot, S. Herbert, T-M. Liu, A. N. Ngo Jan 2012

Quantitative Study Of Spin-Flip Co-Tunneling Transport In A Quantum Dot, S. Herbert, T-M. Liu, A. N. Ngo

Faculty Scholarship

No abstract provided.

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Crystal Field Splitting And Optical Bandgap Of Hexagonal Lufeo3 Films, Wenbin Wang, Hongwei Wang, Xiaoying Xu, Leyi Zhu, Lixin He, Elizabeth Wills, Xuemei Cheng, David J. Keavney, Jian Shen, Xifan Wu, Xiaoshan Xu Jan 2012

Crystal Field Splitting And Optical Bandgap Of Hexagonal Lufeo3 Films, Wenbin Wang, Hongwei Wang, Xiaoying Xu, Leyi Zhu, Lixin He, Elizabeth Wills, Xuemei Cheng, David J. Keavney, Jian Shen, Xifan Wu, Xiaoshan Xu

Xiaoshan Xu Papers

Hexagonal LuFeO3 films have been studied using x-ray absorption and optical spectroscopy. The crystal splitting of Fe3+ is extracted as Ee' - Ee" = 0.7 eV and Ea'1 - Ee' = 0.9 eV, and a 2.0 eV optical bandgap is determined assuming a direct gap. First-principles calculations confirm the experiments that the relative energies of crystal field splitting states do follow Ea'1 > Ee' > Ee" with slightly underestimated values and a bandgap of 1.35 eV.

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Growth Diagram And Magnetic Properties Of Hexagonal Lufe2o4 Thin Films, Wenbin Wang, Zheng Gai, Miaofang Chi, Jason D. Fowlkes, Jieyu Yi, Leyi Zhu, Xuemei Cheng, David J. Keavney, Paul C. Snijders, Thomas Z. Ward, Jian Shen, Xiaoshan Xu Jan 2012

Growth Diagram And Magnetic Properties Of Hexagonal Lufe2o4 Thin Films, Wenbin Wang, Zheng Gai, Miaofang Chi, Jason D. Fowlkes, Jieyu Yi, Leyi Zhu, Xuemei Cheng, David J. Keavney, Paul C. Snijders, Thomas Z. Ward, Jian Shen, Xiaoshan Xu

Xiaoshan Xu Papers

Agrowth diagram of Lu-Fe-O compounds on MgO (111) substrates using pulsed laser deposition is constructed based on extensive growth experiments. The LuFe2O4 phase can only be grown in a small range of temperature and O2 pressure conditions. An understanding of the growth mechanism of Lu-Fe-O compound films is offered in terms of the thermochemistry at the surface. Superparamagnetism is observed in the LuFe2O4 film and is explained in terms of the effect of the impurity hexagonal LuFeO3 (h-LuFeO3) phase and structural defects.

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Thermal Quench Effects On Ferroelectric Domain Walls, P. Paruch, A. B. Kolton, X. Hong, C. H. Ahn, T. Giamarchi Jan 2012

Thermal Quench Effects On Ferroelectric Domain Walls, P. Paruch, A. B. Kolton, X. Hong, C. H. Ahn, T. Giamarchi

Xia Hong Publications

Using piezoresponse force microscopy on epitaxial ferroelectric thin films, we have measured the evolution of domain wall roughening as a result of heat-quench cycles up to 735 ◦C, with the effective roughness exponent ζ changing from 0.25 to 0.5. We discuss two possible mechanisms for the observed ζ increase: a quench from a thermal one-dimensional configuration and from a locally equilibrated pinned configuration with a crossover from a two- to one-dimensional regime. We find that the postquench spatial structure of the metastable states, qualitatively consistent with the existence of a growing dynamical length scale whose ultraslow evolution is primarily controlled …

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Assessing The Feasibility Of Cosmic-Ray Acceleration By Magnetic Turbulence At The Magnetic Center, M. Fatuzzo, F. Melia Jan 2012

Assessing The Feasibility Of Cosmic-Ray Acceleration By Magnetic Turbulence At The Magnetic Center, M. Fatuzzo, F. Melia

Faculty Scholarship

No abstract provided.

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Characterization And Discrimination Of Large Caliber Gun Blast And Flash Signatures, Bryan J. Steward Dec 2011

Characterization And Discrimination Of Large Caliber Gun Blast And Flash Signatures, Bryan J. Steward

Theses and Dissertations

Two hundred and one firings of three 152 mm howitzer munitions were observed to characterize firing signatures of a large caliber gun. Muzzle blast expansion was observed with high-speed (1600 Hz) optical imagery. The trajectory of the blast front was well approximated by a modified point-blast model described by constant rate of energy deposition. Visible and near-infrared (450 - 850 nm) spectra of secondary combustion were acquired at 0.75 nm spectral resolution and depict strong contaminant emissions including Li, Na, K, Cu, and Ca. The O2 (X-b) absorption band is evident in the blue wing of the potassium D lines …

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Resonant Photoemission Of Rare Earth Doped Gan Thin Films, S. R. Mchale, J. W. Mcclory, J. C. Petrosky, J. Wu, R. Palai, Yaroslav B. Losovyj, Peter A. Dowben Jan 2011

Resonant Photoemission Of Rare Earth Doped Gan Thin Films, S. R. Mchale, J. W. Mcclory, J. C. Petrosky, J. Wu, R. Palai, Yaroslav B. Losovyj, Peter A. Dowben

Peter Dowben Publications

The 4d → 4f Fano resonances for various rare earth doped GaN thin films (RE = Gd, Er, Yb) were investigated using synchrotron photoemission spectroscopy. The resonant photoemission Fano profiles show that the major Gd and Er rare earth 4f weight is at about 5–6 eV below the valence band maximum, similar to the 4f weights in the valence band of many other rare earth doped semiconductors. For Yb, there is very little resonant enhancement of the valence band of Yb doped GaN, consistent with a largely 4f14 occupancy.

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Schottky Barrier Formation At The Au To Rare Earth Doped Gan Thin Film Interface, S. R. Mchale, J. W. Mcclory, J. C. Petrosky, J. Wu, R. Palai, Yaroslav B. Losovyj, Peter A. Dowben Jan 2011

Schottky Barrier Formation At The Au To Rare Earth Doped Gan Thin Film Interface, S. R. Mchale, J. W. Mcclory, J. C. Petrosky, J. Wu, R. Palai, Yaroslav B. Losovyj, Peter A. Dowben

Peter Dowben Publications

The Schottky barriers formed at the interface between gold and various rare earth doped GaN thin films (RE = Yb, Er, Gd) were investigated in situ using synchrotron photoemission spectroscopy. The resultant Schottky barrier heights were measured as 1.68 ± 0.1 eV (Yb:GaN), 1.64 ± 0.1 eV (Er:GaN), and 1.33 ± 0.1 eV (Gd:GaN). We find compelling evidence that thin layers of gold do not wet and uniformly cover the GaN surface, even with rare earth doping of the GaN. Furthermore, the trend of the Schottky barrier heights follows the trend of the rare earth metal work function.

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Mesoscale Flux-Closure Domain Formation In Single-Crystal Batio3, R. G.P. Mcquaid, L. J. Mcgilly, Pankaj Sharma, Alexei Gruverman, J. M. Gregg Jan 2011

Mesoscale Flux-Closure Domain Formation In Single-Crystal Batio3, R. G.P. Mcquaid, L. J. Mcgilly, Pankaj Sharma, Alexei Gruverman, J. M. Gregg

Alexei Gruverman Publications

Over 60 years ago, Charles Kittel predicted that quadrant domains should spontaneously form in small ferromagnetic platelets. He expected that the direction of magnetization within each quadrant should lie parallel to the platelet surface, minimizing demagnetizing fields, and that magnetic moments should be configured into an overall closed loop, or flux-closure arrangement. Although now a ubiquitous observation in ferromagnets, obvious flux-closure patterns have been somewhat elusive in ferroelectric materials. This is despite the analogous behaviour between these two ferroic subgroups and the recent prediction of dipole closure states by atomistic simulations research. Here we show Piezoresponse Force Microscopy images of …

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Colossal Negative Magnetoresistance In Dilute Fluorinated Graphene, X. Hong, S.-H. Cheng, C. Herding, J. Zhu Jan 2011

Colossal Negative Magnetoresistance In Dilute Fluorinated Graphene, X. Hong, S.-H. Cheng, C. Herding, J. Zhu

Xia Hong Publications

Adatoms offer an effective route to modify and engineer the properties of graphene. In this work, we create dilute fluorinated graphene using a clean, controlled, and reversible approach. At low carrier densities, the system is strongly localized and exhibits an unexpected, colossal negative magnetoresistance. The zero-field resistance is reduced by a factor of 40 at the highest field of 9 T and shows no sign of saturation. Unusual staircaselike field dependence is observed below 5 K. The magnetoresistance is highly anisotropic. These observations cannot be explained by existing theories, but likely require adatom-induced magnetism and/or a metal-insulator transition driven by …

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Structure And Magnetism Of Mnau Nanoclusters, X. Wei, Damien Le Roy, Ralph Skomski, Xingzhong Li, Zhiguang Sun, Jeffrey E. Shield, M. J. Kramer, David J. Sellmyer Jan 2011

Structure And Magnetism Of Mnau Nanoclusters, X. Wei, Damien Le Roy, Ralph Skomski, Xingzhong Li, Zhiguang Sun, Jeffrey E. Shield, M. J. Kramer, David J. Sellmyer

Nebraska Center for Materials and Nanoscience: Faculty Publications

Equiatomic MnAu clusters with average sizes of 4 and 10 nm are produced by inert-gas condensation. As-produced clusters are used to form both dense cluster films and films with clusters embedded in a W matrix with a cluster volume fraction of 25%. Both structure and magnetism are size-dependent. Structural analysis of the 10 nm clusters indicate a distorted tetragonal body-centered cubic structure with lattice parameters a=0.315 and c=0.329 nm. The 4 nm clusters have a partially ordered tetragonal L10 structure with lattice parameters a=0.410 nm and c=0.395 nm. Magnetic properties of the clusters show evidence at …

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Metastability Of Free Cobalt And Iron Clusters: A Possible Precursor To Bulk Ferromagnetism, Xiaoshan Xu, Shuangye Yin, Ramiro Moro, Anthony Liang, John Bowlan, Walt A. De Heer Jan 2011

Metastability Of Free Cobalt And Iron Clusters: A Possible Precursor To Bulk Ferromagnetism, Xiaoshan Xu, Shuangye Yin, Ramiro Moro, Anthony Liang, John Bowlan, Walt A. De Heer

Xiaoshan Xu Papers

Homonuclear cobalt and iron clusters CoN and FeN measured in a cryogenic molecular beam exist in two states with distinct magnetic moments (μ), polarizabilities, and ionization potentials, indicating distinct valences. The μ is approximately quantized: μN ~ 2NμB in the ground states and μN* ~ NμB in the excited states for Co; μN ~ 3N μB and μN * ~ NμB for Fe. At a large size, the average μ of the two states converges to the bulk value with diminishing ionization potential differences. …

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Magnetism Of Cluster-Deposited Y–Co Nanoparticles, Balamuruga Balamurugan, Ralph Skomski, Xingzhong Li, V. R. Shah, George C. Hadjipanayis, Jeffrey E. Shield, David J. Sellmyer Jan 2011

Magnetism Of Cluster-Deposited Y–Co Nanoparticles, Balamuruga Balamurugan, Ralph Skomski, Xingzhong Li, V. R. Shah, George C. Hadjipanayis, Jeffrey E. Shield, David J. Sellmyer

Nebraska Center for Materials and Nanoscience: Faculty Publications

Nanoparticles of YCo2, YCo3, and YCo5 are produced by cluster-deposition and investigated both structurally and magnetically. The nanoparticles have sizes of less than 10 nm and are superparamagnetic at 300 K, irrespective of stoichiometry. As-produced nanoparticles exhibit disordered structures with magnetic properties differing from those of the bulk particles. The temperature-dependent magnetization curves of the nanoparticles reveal blocking temperatures from 110 to 250 K, depending on stoichiometry. The magnetic anisotropy constant K1 of disordered YCo5 nanoparticles of 7.8 nm in size is 3.5×106ergs/cm3, higher than those of the disordered YCo …

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Magnetodielectric Coupling Of Infrared Phonons In Single-Crystal Cu2oseo3, K. H. Miller, X. S. Xu, H. Berger, E. S. Knowles, D. J. Arenas, M. W. Meisel, D. B. Tanner Jan 2010

Magnetodielectric Coupling Of Infrared Phonons In Single-Crystal Cu2oseo3, K. H. Miller, X. S. Xu, H. Berger, E. S. Knowles, D. J. Arenas, M. W. Meisel, D. B. Tanner

Xiaoshan Xu Papers

Reflection and transmission as a function of temperature (5–300 K) have been measured on a single crystal of the magnetoelectric ferrimagnetic compound Cu2OSeO3 utilizing light spanning the far infrared to the visible portions of the electromagnetic spectrum. The complex dielectric function and optical properties were obtained via Kramers-Kronig analysis and by fits to a Drude-Lortentz model. The fits of the infrared phonons show a magnetodielectric effect near the transition temperature (Tc~60 K). Assignments to strong far-infrared phonon modes have been made, especially those exhibiting anomalous behavior around the transition temperature.

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Tunable Band Gap In Bi(Fe1−Xmnx)O3 Films, X. S. Xu, J. F. Ihlefeld, J. H. Lee, O. K. Ezekoye, E. Vlahos, R. Ramesh, V. Gopalan, X. Q. Pan, D. G. Schlom, J. L. Musfeldt Jan 2010

Tunable Band Gap In Bi(Fe1−Xmnx)O3 Films, X. S. Xu, J. F. Ihlefeld, J. H. Lee, O. K. Ezekoye, E. Vlahos, R. Ramesh, V. Gopalan, X. Q. Pan, D. G. Schlom, J. L. Musfeldt

Xiaoshan Xu Papers

In order to investigate band gap tunability in polar oxides, we measured the optical properties of a series of Bi(Fe1−xMnx)O3 thin films. The absorption response of the mixed metal solid solutions is approximately a linear combination of the characteristics of the two end members, a result that demonstrates straightforward band gap tunability in this system.

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Adsorption-Controlled Growth Of Bimno3 Films By Molecular-Beam Epitaxy, J. H. Lee, X. Ke, R. Misra, J. F. Ihlefeld, X. S. Xu, Z. G. Mei, T. Heeg, M. Roeckerath, J. Schubert, Z. K. Liu, J. L. Musfeldt, P. Schiffer, D. G. Schlom Jan 2010

Adsorption-Controlled Growth Of Bimno3 Films By Molecular-Beam Epitaxy, J. H. Lee, X. Ke, R. Misra, J. F. Ihlefeld, X. S. Xu, Z. G. Mei, T. Heeg, M. Roeckerath, J. Schubert, Z. K. Liu, J. L. Musfeldt, P. Schiffer, D. G. Schlom

Xiaoshan Xu Papers

We have developed the means to grow BiMnO3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with w rocking curve full width at half maximum values as narrow as 11 arc sec (0.003°). Optical absorption measurements reveal that BiMnO3 has a direct band gap of 1.1±0.1 …

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Lattice Dynamical Probe Of Charge Order And Antipolar Bilayer Stacking In Lufe2o4, X. S. Xu, J. De Groot, Q.-C. Sun, B. C. Sales, D. Mandrus, M. Angst, A. P. Litvinchuk, J. L. Musfeldt Jan 2010

Lattice Dynamical Probe Of Charge Order And Antipolar Bilayer Stacking In Lufe2o4, X. S. Xu, J. De Groot, Q.-C. Sun, B. C. Sales, D. Mandrus, M. Angst, A. P. Litvinchuk, J. L. Musfeldt

Xiaoshan Xu Papers

We investigated the infrared response of LuFe2O4 through the series of charge, magnetic, and structural transitions. All vibrational modes couple strongly to the charge order, whereas the LuO zone-folding modes are also sensitive to magnetic order and structural distortion. The dramatic splitting of the LuO2 layer mode is attributed to charge-rich/poor proximity effects and its temperature dependence reveals the antipolar nature of the W layer pattern.

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Optical Properties Of Quasi-Tetragonal Bifeo3 Thin Films, P. Chen, N. J. Podraza, X. S. Xu, A. Melville, E. Vlahos, V. Gopalan, R. Ramesh, D. G. Schlom, J. L. Musfeldt Jan 2010

Optical Properties Of Quasi-Tetragonal Bifeo3 Thin Films, P. Chen, N. J. Podraza, X. S. Xu, A. Melville, E. Vlahos, V. Gopalan, R. Ramesh, D. G. Schlom, J. L. Musfeldt

Xiaoshan Xu Papers

Optical transmission spectroscopy and spectroscopic ellipsometry were used to extract the optical properties of an epitaxially grown quasi-tetragonal BiFeO3 thin film in the near infrared to near ultraviolet range. The absorption spectrum is overall blue shifted compared with that of rhombohedral BiFeO3, with an absorption onset near 2.25 eV, a direct 3.1 eV band gap, and charge transfer excitations that are ~0.4 eV higher than those of the rhombohedral counterpart. We interpret these results in terms of structural strain and local symmetry breaking.

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Robust Isothermal Electric Control Of Exchange Bias At Room Temperature, Xi He, Ning Wu, Anthony N. Caruso, Elio Vescovo, Kirill D. Belashchenko, Peter A. Dowben, Christian Binek Jan 2010

Robust Isothermal Electric Control Of Exchange Bias At Room Temperature, Xi He, Ning Wu, Anthony N. Caruso, Elio Vescovo, Kirill D. Belashchenko, Peter A. Dowben, Christian Binek

Kirill Belashchenko Publications

Voltage-controlled spin electronics is crucial for continued progress in information technology. It aims at reduced power consumption, increased integration density and enhanced functionality where non-volatile memory is combined with highspeed logical processing. Promising spintronic device concepts use the electric control of interface and surface magnetization. From the combination of magnetometry, spin-polarized photoemission spectroscopy, symmetry arguments and first-principles calculations, we show that the (0001) surface of magnetoelectric Cr2O3 has a roughness-insensitive, electrically switchable magnetization. Using a ferromagnetic Pd/Co multilayer deposited on the (0001) surface of a Cr2O3 single crystal, we achieve reversible, room-temperature isothermal switching …

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Deposition Of High-Quality Hfo2 On Graphene And The Effect Of Remote Oxide Phonon Scattering, K. Zou, X. Hong, D. Keefer, J. Zhu Jan 2010

Deposition Of High-Quality Hfo2 On Graphene And The Effect Of Remote Oxide Phonon Scattering, K. Zou, X. Hong, D. Keefer, J. Zhu

Xia Hong Publications

We demonstrate atomic layer deposition of high-quality dielectric HfO2 films on graphene and determine the magnitude of remote oxide surface phonon scattering in dual-oxide structures. The carrier mobility in these HfO2-covered graphene samples reaches 20 000 cm2/Vs at low temperature. Distinct contributions to the resistivity from surface optical phonons in the SiO2 substrate and the HfO2 overlayer are isolated. At 300 K, surface phonon modes of the HfO2 film centered at 54 meV limit the mobility to approximately 20 000 cm2/Vs.

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Unusual Resistance Hysteresis In N-Layer Graphene Field Effect Transistors Fabricated On Ferroelectric Pb(Zr0.2Ti0.8)O3, X. Hong, J. Hoffman, A. Posadas, K. Zou, C. H. Ahn, J. Zhu Jan 2010

Unusual Resistance Hysteresis In N-Layer Graphene Field Effect Transistors Fabricated On Ferroelectric Pb(Zr0.2Ti0.8)O3, X. Hong, J. Hoffman, A. Posadas, K. Zou, C. H. Ahn, J. Zhu

Xia Hong Publications

We have fabricated n-layer graphene field effect transistors on epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 (PZT) thin films. At low gate voltages, PZT behaves as a high-k dielectric with k up to 100. An unusual resistance hysteresis occurs in gate sweeps at high voltages, with its direction opposite to that expected from the polarization switching of PZT. The relaxation of the metastable state is thermally activated, with an activation barrier of 50–110 meV and a time constant of 6 h at 300 K. We attribute its origin to the slow dissociation/recombination dynamics of water molecules adsorbed at …

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Dynamical Theory Calculations Of Spin-Echo Resolved Grazing-Incidence Scattering From A Diffraction Grating, Rana Ashkar, P. Stonaha, A. L. Washington, V. R. Shah, M. R. Fitzsimmons, B. Maranville, C. F. Majkrzak, W. T. Lee, W. L. Schaich, Roger Pynn Jan 2010

Dynamical Theory Calculations Of Spin-Echo Resolved Grazing-Incidence Scattering From A Diffraction Grating, Rana Ashkar, P. Stonaha, A. L. Washington, V. R. Shah, M. R. Fitzsimmons, B. Maranville, C. F. Majkrzak, W. T. Lee, W. L. Schaich, Roger Pynn

Nebraska Center for Materials and Nanoscience: Faculty Publications

Neutrons scattered or reflected from a diffraction grating are subject to a periodic potential analogous to the potential experienced by electrons within a crystal. Hence, the wavefunction of the neutrons can be expanded in terms of Bloch waves and a dynamical theory can be applied to interpret the scattering phenomenon. In this paper, a dynamical theory is used to calculate the results of neutron spin-echo resolved grazing-incidence scattering (SERGIS) from a silicon diffraction grating with a rectangular profile. The calculations are compared with SERGIS measurements made on the same grating at two neutron sources: a pulsed source and a continuous …

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Thermodynamic Stability Of Transition States In Nanosystems, Alexander Umantsev Jul 2009

Thermodynamic Stability Of Transition States In Nanosystems, Alexander Umantsev

Chemistry and Physics Faculty Working Papers

We present a theory which shows that, in a closed system of fixed volume capable of undergoing a phase transition, the transition state can be thermodynamically stable against the bulk phases if a certain material parameters criterion is fulfilled. In a small system below the critical size the transition state turns into a globally stable phase that can be observed experimentally. This effect is analogous to stabilization of icosahedral structures in clusters of certain sizes and energies. Stabilization of the transition state in small systems of limited resources allows us to conjecture that, in the case of a melting/freezing transition …

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Pressure-Driven Transport Of Particles Through A Converging-Diverging Microchannel, Ye Ai, Sang W. Joo, Yingtao Jiang, Xiangchun Xuan, Shizhi Qian Jun 2009

Pressure-Driven Transport Of Particles Through A Converging-Diverging Microchannel, Ye Ai, Sang W. Joo, Yingtao Jiang, Xiangchun Xuan, Shizhi Qian

Mechanical Engineering Faculty Research

Pressure-driven transport of particles through a symmetric converging-diverging microchannel is studied by solving a coupled nonlinear system, which is composed of the Navier–Stokes and continuity equations using the arbitrary Lagrangian–Eulerian finite-element technique. The predicted particle translation is in good agreement with existing experimental observations. The effects of pressure gradient, particle size, channel geometry, and a particle’s initial location on the particle transport are investigated. The pressure gradient has no effect on the ratio of the translational velocity of particles through a converging-diverging channel to that in the upstream straight channel. Particles are generally accelerated in the converging region and then …

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Optical Properties And Magnetochromism In Multiferroic Bifeo3, X. S. Xu, T. V. Brinzari, S. Lee, Y. H. Chu, L. W. Martin, A. Kumar, S. Mcgill, R. C. Rai, R. Ramesh, V. Gopalan, S. W. Cheong, J. L. Musfeldt Jan 2009

Optical Properties And Magnetochromism In Multiferroic Bifeo3, X. S. Xu, T. V. Brinzari, S. Lee, Y. H. Chu, L. W. Martin, A. Kumar, S. Mcgill, R. C. Rai, R. Ramesh, V. Gopalan, S. W. Cheong, J. L. Musfeldt

Xiaoshan Xu Papers

In order to investigate spin-charge coupling in multiferroic oxides, we measured the optical properties of BiFeO3. Although the direct 300 K charge gap is observed at 2.67 eV, absorption onset actually occurs at much lower energy with Fe3+ excitations at 1.41 and 1.90 eV. Temperature and magnetic-field-induced spectral changes reveal complex interactions between on-site crystal-field and magnetic excitations in the form of magnon sidebands. We employ the sensitivity of these magnon sidebands to map out the magnetic-fieldtemperature phase diagram which demonstrates optical evidence for spin spiral quenching above 20 T and suggests a spin domain reorientation near …

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Absence Of Spin Liquid Behavior In Nd3ga5sio14 Using Magneto-Optical Spectroscopy, X. S. Xu, T. V. Brinzari, S. Mcgill, H. D. Zhou, C. R. Wiebe, J. L. Musfeldt Jan 2009

Absence Of Spin Liquid Behavior In Nd3ga5sio14 Using Magneto-Optical Spectroscopy, X. S. Xu, T. V. Brinzari, S. Mcgill, H. D. Zhou, C. R. Wiebe, J. L. Musfeldt

Xiaoshan Xu Papers

We measured the low-lying crystal field levels of Nd3+ in Nd3Ga5SiO14 via magneto-optical spectroscopy and employed the extracted energies, magnetic moments, and symmetries to analyze the magnetic properties and test the spin liquid candidacy of this material. The exchange interaction is surprisingly small, a discovery that places severe constraints on models used to describe the ground state of this system. Further, it demonstrates the value of local-probe photophysical techniques for rare-earthcontaining materials where bulk property measurements can be skewed by low-lying electronic structure.

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Magnon Sidebands And Spin-Charge Coupling In Bismuth Ferrite Probed By Nonlinear Optical Spectroscopy, M. O. Ramirez, A. Kumar, S. A. Denev, N. J. Podraza, X. S. Xu, R. C. Rai, Y. H. Chu, J. Seidel, L. W. Martin, S. -Y. Yang, E. Saiz, J. F. Ihlefeld, S. Lee, J. Klug, S. W. Cheong, M. J. Bedzyk, O. Auciello, D. G. Schlom, R. Ramesh, J. Orenstein, J. L. Musfeldt, V. Gopalan Jan 2009

Magnon Sidebands And Spin-Charge Coupling In Bismuth Ferrite Probed By Nonlinear Optical Spectroscopy, M. O. Ramirez, A. Kumar, S. A. Denev, N. J. Podraza, X. S. Xu, R. C. Rai, Y. H. Chu, J. Seidel, L. W. Martin, S. -Y. Yang, E. Saiz, J. F. Ihlefeld, S. Lee, J. Klug, S. W. Cheong, M. J. Bedzyk, O. Auciello, D. G. Schlom, R. Ramesh, J. Orenstein, J. L. Musfeldt, V. Gopalan

Xiaoshan Xu Papers

The interplay between spin waves (magnons) and electronic structure in materials leads to the creation of additional bands associated with electronic energy levels which are called magnon sidebands. The large difference in the energy scales between magnons (meV) and electronic levels (eV) makes this direct interaction weak and hence makes magnon sidebands difficult to probe. Linear light absorption and scattering techniques at low temperatures are traditionally used to probe these sidebands. Here we show that optical secondharmonic generation, as the lowest-order nonlinear process, can successfully probe the magnon sidebands at room temperature and up to 723 K in bismuth ferrite, …

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Anisotropic Magnetoresistance And Planar Hall Effect In Epitaxial Films Of La0.7Ca0.3Mno3, N. Naftalis, Y. Bason, J. Hoffman, X. Hong, C. H. Ahn, L. Klein Jan 2009

Anisotropic Magnetoresistance And Planar Hall Effect In Epitaxial Films Of La0.7Ca0.3Mno3, N. Naftalis, Y. Bason, J. Hoffman, X. Hong, C. H. Ahn, L. Klein

Xia Hong Publications

We measured the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in a [001] oriented epitaxial thin film of La0.7Ca0.3MnO3 (LCMO) as a function of magnetic field, temperature, and current direction relative to the crystal axes. We find that both AMR and PHE in LCMO depend strongly on the current orientation relative to the crystal axes, and we demonstrate the applicability of AMR and PHE equations based on a fourth order magnetoresistance tensor consistent with the film symmetry.

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High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated On Epitaxial Ferroelectric Gate Oxides, X. Hong, A. Posadas, K. Zou, C. H. Ahn, J. Zhu Jan 2009

High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated On Epitaxial Ferroelectric Gate Oxides, X. Hong, A. Posadas, K. Zou, C. H. Ahn, J. Zhu

Xia Hong Publications

The carrier mobility μ of few-layer graphene (FLG) field-effect transistors increases tenfold when the SiO2 substrate is replaced by single-crystal epitaxial Pb(Zr0.2Ti0:8)O3 (PZT). In the electron-only regime of the FLG, μ reaches 7 X 104 cm2 / Vs at 300 K for n = 2.4 X 1012=cm2, 70% of the intrinsic limit set by longitudinal acoustic (LA) phonons; it increases to 1.4 X 105 cm2 / Vs at low temperature. The temperature-dependent resistivity p(T) reveals a clear signature of LA phonon scattering, yielding …

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Quantum Scattering Time And Its Implications On Scattering Sources In Graphene, X. Hong, K. Zou, J. Zhu Jan 2009

Quantum Scattering Time And Its Implications On Scattering Sources In Graphene, X. Hong, K. Zou, J. Zhu

Xia Hong Publications

We determine the quantum scattering time Tq in six graphene samples with mobility of 4 400<μ <17 000 cm2 /V s over a wide range of carrier density (1.2<n<6X1012/cm2). Tq derived from Shubnikov–de Haas oscillation ranges ~25–74 fs, corresponding to a single-particle level broadening of 4.5–13 meV. The ratio of the transport to quantum scattering time Tt /Tq spans 1.5–5.1 in these samples, which can be quantitatively understood combining scattering from short-ranged centers and charged impurities located within 2 nm of the graphene sheet. Our results suggest that charges residing on the SiO …

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