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Articles 91 - 120 of 121
Full-Text Articles in Atomic, Molecular and Optical Physics
Nonthermal Laser-Induced Formation Of Crystalline Ge Quantum Dots On Si(100), M. S. Hegazy, H. E. Elsayed-Ali
Nonthermal Laser-Induced Formation Of Crystalline Ge Quantum Dots On Si(100), M. S. Hegazy, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
The effects of laser-induced electronic excitations on the self-assembly of Ge quantum dots on Si (100) - (2×1) grown by pulsed laser deposition are studied. Electronic excitations due to laser irradiation of the Si substrate and the Ge film during growth are shown to decrease the roughness of films grown at a substrate temperature of ∼120 °C. At this temperature, the grown films are nonepitaxial. Electronic excitation results in the formation of an epitaxial wetting layer and crystalline Ge quantum dots at ∼260 °C, a temperature at which no crystalline quantum dots form without excitation under the same deposition conditions. …
Practical Sensor For Measurement Of Nitrogen, Dusan Popovic, Vladimir Milosavljevic, Steven Daniels
Practical Sensor For Measurement Of Nitrogen, Dusan Popovic, Vladimir Milosavljevic, Steven Daniels
Articles
This paper presents a method for precise measurement of atomic and molecular nitrogen in an oxygen-nitrogen dc plasma. This is achieved by monitoring the intensities of the atomic nitrogen spectral line at 821.6 nm and the molecular nitrogen bandhead at 337.1 nm, relative to the atomic oxygen spectral line at 844.7 nm. Oxygen is one of the most frequently used gases for surface chemical treatment, including deposition and etching, therefore the ability to measure and control the process and chemical composition of the process is essential. To validate this oxygen actimometry method for N2-xO2 (where x varies from 0 to …
Formation Of In- (2×1) And In Islands On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali
Formation Of In- (2×1) And In Islands On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
The growth of indium on a vicinal Si (100) - (2×1) surface at room temperature by femtosecond pulsed laser deposition (fsPLD) was investigated by in situ reflection high-energy electron diffraction (RHEED). Recovery of the RHEED intensity was observed between laser pulses and when the growth was terminated. The surface diffusion coefficient of deposited In on initial two-dimensional (2D) In- (2×1) layer was determined. As growth proceeds, three-dimensional In islands grew on the 2D In- (2×1) layer. The RHEED specular profile was analyzed during film growth, while the grown In islands were examined by ex situ atomic force microscopy. The full …
Radiometric Analysis Of Daytime Satellite Detection, Katherine B. Lilevjen
Radiometric Analysis Of Daytime Satellite Detection, Katherine B. Lilevjen
Theses and Dissertations
A radiometric model for daylight satellite detection is developed and used to evaluate the effects of various parameters on signal-to-noise ratio (SNR). Detection of reflected sunlight from a low-earth orbit, diffuse, planar satellite by a single-pixel infrared photovoltaic detector is considered. Noise considered includes photon noise from the background and signal, as well as thermal noise. Parameters considered include atmospheric conditions, optical parameters, and detector parameters. The Phillips Laboratory Expert-assisted User System, an atmospheric modeling tool that employs the MODTRAN and FASCODE transmission codes, is used to model wavelength-dependent atmospheric transmission and background radiance. The SNR is found to increase …
Passive Ranging Using Atmospheric Oxygen Absorption Spectra, Michael R. Hawks
Passive Ranging Using Atmospheric Oxygen Absorption Spectra, Michael R. Hawks
Theses and Dissertations
The depth of absorption bands in observed spectra of distant, bright sources can be used to estimate range to the source. A novel approach is presented and demonstrated using observations of the oxygen absorption band near 762 nm. Range is estimated by comparing observed values of band-average absorption against curves derived from either historical data or model predictions. Curves are based on fitting a random band model to the data, which reduces average range error by 67% compared to the Beer's Law model used in previous work. A new modification to existing band models for long, inhomogeneous paths is presented …
Growth Of Ge Quantum Dots On Si(100)-(2×1) By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali
Growth Of Ge Quantum Dots On Si(100)-(2×1) By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Self-assembled germanium quantum dots (QDs) were grown on Si(100)-(2×1) by pulsed laser deposition. In situ reflection-high energy electron diffraction (RHEED) and postdeposition atomic force microscopy are used to study the growth of the QDs. Several films of different thicknesses were grown at a substrate temperature of 400 °C using a Q-switched Nd:yttrium aluminum garnet laser (λ= 1064 nm, 40 ns pulse width, 23 J/cm 2 fluence, and 10 Hz repetition rate). At low film thicknesses, hut clusters that are faceted by different planes, depending on their height, are observed after the completion of the wetting layer. With increasing film thickness, …
Melting And Solidification Study Of As-Deposited And Recrystallized Bi Thin Films, M. K. Zayed, H. E. Elsayed-Ali
Melting And Solidification Study Of As-Deposited And Recrystallized Bi Thin Films, M. K. Zayed, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Melting and solidification of as-deposited and recrystallized Bi crystallites, deposited on highly oriented 002-graphite at 423 K, were studied using reflection high-energy electron diffraction (RHEED). Films with mean thickness between 1.5 and 33 ML (monolayers) were studied. Ex situ atomic force microscopy was used to study the morphology and the size distribution of the formed nanocrystals. The as-deposited films grew in the form of three-dimensional crystallites with different shapes and sizes, while those recrystallized from the melt were formed in nearly similar shapes but different sizes. The change in the RHEED pattern with temperature was used to probe the melting …
Using Ultrasonic Atomization To Produce An Aerosol Of Micron-Scale Particles, Thomas D. Donnelly, J. Hogan '03, A. Mugler '04, M. Schubmehl '02, N. Schommer '04, Andrew J. Bernoff, S. Dasnurkar, T. Ditmire
Using Ultrasonic Atomization To Produce An Aerosol Of Micron-Scale Particles, Thomas D. Donnelly, J. Hogan '03, A. Mugler '04, M. Schubmehl '02, N. Schommer '04, Andrew J. Bernoff, S. Dasnurkar, T. Ditmire
All HMC Faculty Publications and Research
A device that uses ultrasonic atomization of a liquid to produce an aerosol of micron-scale droplets is described. This device represents a new approach to producing targets relevant to laser-driven fusion studies, and to rare studies of nonlinear optics in which wavelength-scale targets are irradiated. The device has also made possible tests of fluid dynamics models in a novel phase space. The distribution of droplet sizes produced by the device and the threshold power required for droplet production are shown to follow scaling laws predicted by fluid dynamics.
Condensation On (002) Graphite Of Liquid Bismuth Far Below Its Bulk Melting Point, M. K. Zayed, H. E. Elsayed-Ali
Condensation On (002) Graphite Of Liquid Bismuth Far Below Its Bulk Melting Point, M. K. Zayed, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Condensation of thermally evaporated Bi on (002) graphite, at temperatures of 300-523K, was studied using in situ reflection high-energy electron diffraction (RHEED) and room temperature ex situ atomic force microscopy (AFM). For deposition at temperatures below 415±5K, transmission RHEED patterns of Bi appeared at an average thickness of ∼0.5 monolayer (ML). AFM images showed that the film consisted of crystallites in the shape of triangular step pyramids with step heights corresponding to single and double Bi layers in the [111] direction. This morphology indicates crystallization from the vapor. For deposition at higher temperatures, diffuse RHEED patterns appeared independent of the …
Self-Assembly Of Ge Quantum Dots On Si(100)- 2×1 By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali
Self-Assembly Of Ge Quantum Dots On Si(100)- 2×1 By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Self-assembled Ge quantum dots are grown on Si(100)- 2×1 by pulsed laser deposition. The growth is studied by in situ reflection high-energy electron diffraction and postdeposition atomic force microscopy. After the completion of the wetting layer, transient hut clusters, faceted by different planes, are observed. When the height of these clusters exceeded a certain value, the facets developed into {305} planes. Some of these huts become {305}-faceted pyramids as the film mean thickness was increased. With further thickness increase, dome clusters developed on the expense of these pyramids. © 2005 American Institute of Physics. [DOI: 10.1063/1.1949285]
Dynamical Studies Of Model Membrane And Cellular Response To Nanosecond, High-Intensity Pulsed Electric Fields, Qin Hu
Electrical & Computer Engineering Theses & Dissertations
The dynamics of electroporation of biological cells subjected to nanosecond, high intensity pulses are studied based on a coupled scheme involving the current continuity and Smoluchowski equations. The improved pore formation energy model includes a dependence on pore population and density. It also allows for variable surface tension and incorporates the effects of finite conductivity on the electrostatic correction term, which was not considered by the simple energy models in the literature. It is shown that E(r) becomes self-adjusting with variations in its magnitude and profile. The whole scheme is self-consistent and dynamic.
An electromechanical analysis based on thin-shell theory …
Deviation Of Time-Resolved Luminescence Dynamics In Mwir Semiconductor Materials From Carrier Recombination Theory Predictions, Peter M. Johnson
Deviation Of Time-Resolved Luminescence Dynamics In Mwir Semiconductor Materials From Carrier Recombination Theory Predictions, Peter M. Johnson
Theses and Dissertations
Time resolved luminescence spectroscopy was used to characterize luminescence decay curves for a bulk InAs sample and an InAsSb type-I quantum-well sample over the first 3ns following excitation. The luminescence decay curves were then converted to carrier densities and used to find recombination coefficients that provided the least-squared-error solution of the rate equation describing carrier recombination. Recombination coefficients describing Shockley Read-Hall (ASRH) radiative (Brad) and Auger (CAug) recombination were determined at two different temperatures and four excitation powers, then analyzed for consistency and physical significance. For all of the resulting least …
Are Microbubbles Necessary For The Breakdown Of Liquid Water Subjected To A Submicrosecond Pulse?, R. P. Joshi, J. Qian, G. Zhao, J. Kolb, K. H. Schoenbach, E. Schamiloglu, J. Gaudet
Are Microbubbles Necessary For The Breakdown Of Liquid Water Subjected To A Submicrosecond Pulse?, R. P. Joshi, J. Qian, G. Zhao, J. Kolb, K. H. Schoenbach, E. Schamiloglu, J. Gaudet
Electrical & Computer Engineering Faculty Publications
Electrical breakdown in homogeneous liquid water for an ∼ 100 ns voltage pulse is analyzed. It is shown that electron-impact ionization is not likely to be important and could only be operative for low-density situations or possibly under optical excitation. Simulation results also indicate that field ionization of liquid water can lead to a liquid breakdown provided the ionization energies were very low in the order of 2.3eV. Under such conditions, an electric-field collapse at the anode and plasma propagation toward the cathode, with minimal physical charge transport, is predicted. However, the low, unphysical ionization energies necessary for matching …
Field Emission Based Sensors Using Carbon Nanotubes, Changkun Dong
Field Emission Based Sensors Using Carbon Nanotubes, Changkun Dong
Physics Theses & Dissertations
A number of sensitive applications would be greatly benefited by the development of better cold cathodes that employ the electron field emission process. Among the many kinds of field emitters that could be tried, carbon nanotubes (CNT) have a number of distinct advantages because of their unique geometrical structure, chemical inertness, mechanical stiffness, and high thermal and electrical conductivities. This dissertation describes research in which CNT cathodes were fabricated and their emission characteristics were measured.
Multi-walled carbon nanotubes (MWNT) were grown by chemical vapor deposition (CVD) on various substrates: Ni and Hastelloy gauze, 304 stainless steel (SS) plates, and Ni-coated …
Atomic Hydrogen Cleaning Of Inp(100): Electron Yield And Surface Morphology Of Negative Electron Affinity Activated Surfaces, M. A. Hafez, H. E. Elsayed-Ali
Atomic Hydrogen Cleaning Of Inp(100): Electron Yield And Surface Morphology Of Negative Electron Affinity Activated Surfaces, M. A. Hafez, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Atomic hydrogen cleaning of the InP(100) surface has been investigated using quantitative reflection high-energy electron diffraction. The quantum efficiency of the surface when activated to negative electron affinity was correlated with surface morphology. The electron diffraction patterns showed that hydrogen cleaning is effective in removing surface contaminants, leaving a clean, ordered, and (2×4)-reconstructed surface. After activation to negative electron affinity, a quantum efficiency of ∼6% was produced in response to photoactivation at 632 nm. Secondary electron emission from the hydrogen-cleaned InP(100)-(2×4) surface was measured and correlated to the quantum efficiency. The morphology of the vicinal InP(100) surface was investigated using …
Electron Pulse Broadening Due To Space Charge Effects In A Photoelectron Gun For Electron Diffraction And Streak Camera Systems, Bao-Liang Qian, Hani E. Elsayed-Ali
Electron Pulse Broadening Due To Space Charge Effects In A Photoelectron Gun For Electron Diffraction And Streak Camera Systems, Bao-Liang Qian, Hani E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
The electron pulse broadening and energy spread, caused by space charge effects, in a photoelectron gun are studied analytically using a fluid model. The model is applicable in both the photocathode-to-mesh region and the postanode electron drift region. It is found that space charge effects in the photocathode-to-mesh region are generally unimportant even for subpicosecond pulses. However, because of the long drift distance, electron pulse broadening due to space charge effects in the drift region is usually significant and could be much larger than the initial electron pulse duration for a subpicosecond electron pulse. Space charge effects can also lead …
Acceleration Element For Femtosecond Electron Pulse Compression, Bao-Liang Qian, Hani E. Elsayed-Ali
Acceleration Element For Femtosecond Electron Pulse Compression, Bao-Liang Qian, Hani E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
An acceleration element is proposed for compressing the electron pulse duration in a femtosecond photoelectron gun. The element is a compact metal cavity with curved-shaped walls. An external voltage is applied to the cavity where a special electric field forms in such a way that the slow electrons in the electron pulse front are accelerated more than the fast electrons, and consequently the electron pulse duration will be compressed. The distribution of the electric field inside the acceleration cavity is analyzed for the geometry of the cavity. The electron dynamics in this acceleration cavity is also investigated numerically. Numerical results …
A New Compensating Element For A Femtosecond Photoelectron Gun, Bao-Liang Qian, Hani E. Elsayed-Ali
A New Compensating Element For A Femtosecond Photoelectron Gun, Bao-Liang Qian, Hani E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Design and analysis of a new compensating element for improving the electron pulse front and compressing the pulse duration in a femtosecond photoelectron gun are described. The compensating element is a small metallic cylindrical cavity in which an external voltage is applied in such a way that a special electric field forms and interacts with the electron pulse. This electric field reduces the distances between the faster and slower electrons inside the cavity and efficiently compensates for electron pulse broadening caused by the photoelectron energy spread and space charge effects. Poisson's equation and the equation of motion are solved to …
Resolution Of Overlapping Spectra By Wavelength Modulation Spectroscopy, Audra Michiele Bullock
Resolution Of Overlapping Spectra By Wavelength Modulation Spectroscopy, Audra Michiele Bullock
Electrical & Computer Engineering Theses & Dissertations
Wavelength modulation absorption spectroscopy is a highly sensitive, non-intrusive technique for probing gaseous species, which employs the well-known principles of modulation spectroscopy in a novel way. With this technique, parameters such as velocity, density, and temperature can be measured with a high degree of precision. The research presented here shows that wavelength modulation is a convenient means of increasing the sensitivity of an absorption spectroscopy measurement because it allows for harmonic detection. The focus of the dissertation is resolution of overlapping spectra by harmonic detection and the advantages gained by performing detection at the higher harmonics, e.g., sixth and eighth. …
Material Evaluation By Pulsed Diode Laser Optoacoustics, Xiaodong Xu
Material Evaluation By Pulsed Diode Laser Optoacoustics, Xiaodong Xu
Electrical & Computer Engineering Theses & Dissertations
Pulsed diode laser optoacoustic diagnostics were carried out to characterize solid sample materials. The apparatus developed is compact, portable, cost-effective and therefore very promising for both industrial as well as laboratory applications. To our knowledge, this is the first time that optoacoustic characterization and measurement have been performed with a diode laser. The method was successfully applied to measure the thickness of a multilayer structure non-intrusively. Internal cracks of the material were detected by this technique.
A theory for optoacoustic signal generation, propagation and detection is given. A numerical analysis technique is developed to solve for the expected signal. In …
Emission Of Excimer Radiation From Direct Current, High-Pressure Hollow Cathode Discharge, Ahmed El-Habachi, Karl H. Schoenbach
Emission Of Excimer Radiation From Direct Current, High-Pressure Hollow Cathode Discharge, Ahmed El-Habachi, Karl H. Schoenbach
Bioelectrics Publications
A novel, nonequilibrium, high-pressure, direct current discharge, the microhollow cathode discharge, has been found to be an intense source of xenon and argon excimer radiation peaking at wavelengths of 170 and 130 nm, respectively. In argon discharges with a 100 μm diam hollow cathode, the intensity of the excimer radiation increased by a factor of 5 over the pressure range from 100 to 800 mbar. In xenon discharges, the intensity at 170 nm increased by two orders of magnitude when the pressure was raised from 250 mbar to 1 bar. Sustaining voltages were 200 V for argon and 400 V …
Surface Debye Temperature Measurement With Reflection High-Energy Electron Diffraction, H. E. Elsayed-Ali
Surface Debye Temperature Measurement With Reflection High-Energy Electron Diffraction, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Measurement of the surface mean-square atomic vibrational amplitude, or equivalently the surface Debye temperature, with reflection high-energy electron diffraction is discussed. Low-index surfaces of lead are used as examples. Particular details are given about the temperature-dependent diffraction pattern of Pb(100) in the Debye-Waller region. The use of reflection high-energy electron diffraction for measurement of the substrate surface temperature in thin-film deposition chambers is suggested. © 1996 American Institute of Physics.
Non-Imaging Infrared Spectral Target Detection, Matthew R. Whiteley
Non-Imaging Infrared Spectral Target Detection, Matthew R. Whiteley
Theses and Dissertations
Automatic detection of time-critical mobile targets using spectral-only infrared radiance data is explored. A quantification of the probability of detection, false alarm rate, and total error rate associated with this detection process is provided. A set of classification features is developed for the spectral data, and these features are utilized in a Bayesian classifier singly and in combination to provide target detection. The results of this processing are presented and sensitivity of the class separability to target set, target configuration, diurnal variations, mean contrast, and ambient temperature estimation errors is explored. This work introduces the concept of atmospheric normalization of …
Ohmic Contact To Ion Implanted Gallium Arsenide Antimonide For Application To Indium Aluminum Arsenide-Gallium Arsenide Antimonide Heterostructure Insulated-Gate Field Effect Transistors, Kenneth G. Merkel Ii
Ohmic Contact To Ion Implanted Gallium Arsenide Antimonide For Application To Indium Aluminum Arsenide-Gallium Arsenide Antimonide Heterostructure Insulated-Gate Field Effect Transistors, Kenneth G. Merkel Ii
Theses and Dissertations
The p-channel In0.52Al0.48As-GaAs1-xSbx heterostructure insulated-gate field effect transistor (p-HIGFET) is a candidate for complementary integrated circuits due to superior cutoff characteristics and low gate leakage current. Advancement of the In0.52Al0.48As-GaAs1-xSbx p-HIGFET requires improved source-drain design. Five main tasks were accomplished to achieve this goal. First, thermal limits of the In0.52Al0.48As-GaAs0.51Sb0.49 HIGFET were investigated. Second, the temperature dependence of band gap and impurity energies were determined for beryllium doped In0.52Al0.48. Third, high acceptor concentrations were obtained …
Bandwidth And Additive Bandwidth Of Graphs, Maria Kujawski
Bandwidth And Additive Bandwidth Of Graphs, Maria Kujawski
Honors Capstone Projects and Theses
No abstract provided.
Scanning-Tunneling-Microscopy Study Of Pb On Si(111), D. Tang, H. E. Elsayed-Ali, J. Wendelken, J. Xu
Scanning-Tunneling-Microscopy Study Of Pb On Si(111), D. Tang, H. E. Elsayed-Ali, J. Wendelken, J. Xu
Electrical & Computer Engineering Faculty Publications
Scanning-tunneling microscopy has been used to study temperature and coverage dependence of the structure of lead on the Si(111)-7×7 surface. For low Pb coverage, the Pb atoms favored the faulted sites. The ratio between the number of Pb atoms on faulted to unfaulted sites increased after sample annealing. An energy difference of 0.05 eV associated with a Pb atom on these two sites is estimated. The mobility of Pb atoms on Si(111) was observed at a temperature as low as 260°C for a coverage of 0.1 and 1 ML. © 1995 The American Physical Society.
Hyperspectral Analysis Of Space Objects: Signal To Noise Evaluation, Daniel Hrovat
Hyperspectral Analysis Of Space Objects: Signal To Noise Evaluation, Daniel Hrovat
Theses and Dissertations
Hyperspectral analysis of space objects is being considered as a means of enhancing Space Object Identification. SOI capabilities. This study develops a mathematical simulation based on fundamental radiometry principles to evaluate the feasibility of hyperspectral analysis of space objects. The study uses Signal to Noise Ratio SNR as the basis for the feasibility evaluation, and addresses the question Is there enough target signal in narrow wavelength bandwidths to conduct hyperspectral measurements of space objects The analysis characterizes the target signal and noise sources using fundamental radiometry, and develops a flexible radiometry model which calculates the target signal count rate, and …
Temporal Development Of Electric Field Structures In Photoconductive Gaas Switches, K. H. Schoenbach, J. S. Kenney, F.E. Peterkin, R. J. Allen
Temporal Development Of Electric Field Structures In Photoconductive Gaas Switches, K. H. Schoenbach, J. S. Kenney, F.E. Peterkin, R. J. Allen
Bioelectrics Publications
The temporal development of the electric field distribution in semi‐insulating GaAs photoconductive switches operated in the linear and lock‐on mode has been studied. The field structure was obtained by recording a change in the absorption pattern of the switch due to the Franz–Keldysh effect at a wavelength near the band edge of GaAs. In the linear mode, a high field layer develops at the cathode contact after laser activation. With increasing applied voltage, domainlike structures become visible in the anode region and the switch transits into the lock‐on state, a permanent filamentary electrical discharge. Calibration measurements show the field intensity …
Gaseous Component Identification With Polymeric Film Sensor, Edward S. Kolesar Jr.
Gaseous Component Identification With Polymeric Film Sensor, Edward S. Kolesar Jr.
AFIT Patents
A sensor having an interdigitated gate electrode field effect transistor (IGEFET) coupled to an electron beam evaporated copper phthalocyanine thin film is used to selectively detect parts-per-billion concentration levels of atmosphere contaminants such as nitrogen dioxide (NO2) and diisopropyl methylphosphonate (DIMP). The sensor is excited with a voltage pulse, and its time- and frequency-domain response are examined. The envelopes of the magnitude of the normalized difference frequency spectrums reveal features which unambiguously distinguish the NO2 and DIMP exposures.
Comment On "Orientation, Alignment, And Hyperfine Effects On Dissociation Of Diatomic Molecules To Open Shell Atoms", Mark D. Havey, Linda L. Vahala
Comment On "Orientation, Alignment, And Hyperfine Effects On Dissociation Of Diatomic Molecules To Open Shell Atoms", Mark D. Havey, Linda L. Vahala
Electrical & Computer Engineering Faculty Publications
A recent paper in this journal [Y. B. Band e t a l., J. Chem. Phys. 8 4, 3762 (1986)] reported parameters describing orientation and alignment produced, in an axial recoil limit, by one photondissociation of diatomic molecules. Reported also were values, applicable to the resonance transitions of the alkali atoms, for orientation and alignment depolarization coefficients. Most of the numerical values reported for the coefficients were incorrect, in some cases by as much as a factor of 2. We report a tabulation of correct depolarization coefficients applicable to the resonance transitions of common alkali isotopes. Further, the coefficients …