Atomic, Molecular and Optical Physics Commons^™

Specification Of Jecp/Sp: Stereographic Projection With An Application For Specimen Orientation Adjustment Using Tem Holders, Xingzhong Li

Nebraska Center for Materials and Nanoscience: Faculty Publications

1. Purpose of the program 2. Graphic user interface and program design 3. Crystallographic principle and implementation 4. System requirement 5. Installation and user instruction 6. How to contact the author 7. References

1. Purpose of the program JECP/SP is a computer program in Java Electron Crystallography Package. JECP is developed for quantitative electron diffraction and image processing, the package is designed and written by Dr. XingZhong Li. JECP/SP provides the all necessary functions of stereographic projection for regular application and furthermore it can be used to minimized the difficulties encountered when tilting highly beam-sensitive, or small-grain-size specimens with known …

Jecp/Ed Manual, Xingzhong Li

Nebraska Center for Materials and Nanoscience: Faculty Publications

JECP/ED is a Java program with graphic interface for simulating electron diffraction pattern. It is designed and written by Dr. Xingzhong in University of Nebraska- Lincoln. This is verision 12-2002. It can be used for simulating electron diffraction zone pattern(ZOLZ with/without FOLZ), it allows to select zone axis, high voltage, sample thickness in the simulation, optional to show index, intensity and Laue center, featureed with manuniplating the pattern with slightly tilting, 360 degree rotation, zoom. The diffraction intensity is calculated on the basis of the kinematical theory. The program is extended to simulate electron diffraction with a precession of incident …

Scanning-Tunneling-Microscopy Study Of Pb On Si(111), D. Tang, H. E. Elsayed-Ali, J. Wendelken, J. Xu

Electrical & Computer Engineering Faculty Publications

Scanning-tunneling microscopy has been used to study temperature and coverage dependence of the structure of lead on the Si(111)-7×7 surface. For low Pb coverage, the Pb atoms favored the faulted sites. The ratio between the number of Pb atoms on faulted to unfaulted sites increased after sample annealing. An energy difference of 0.05 eV associated with a Pb atom on these two sites is estimated. The mobility of Pb atoms on Si(111) was observed at a temperature as low as 260°C for a coverage of 0.1 and 1 ML. © 1995 The American Physical Society.

Photorefraction In Batio3, Stephen Ducharme

Stephen Ducharme Publications

This thesis summarizes the results of experimental investigations of the photorefractive properties of melt-grown BaTiO₃ single crystals. Three basic photorefractive material properties are studied: (1) the effective density of photorefractive charges, (2) the photoconductivity of the photorefractive charges, and (3) the relative contributions of electron and hole photoconduction. Volume holographic measurement techniques are used: two-beam energy coupling, four-wave mixing, and erasure of volume holograms. The photorefractive properties were altered experimentally by chemically reducing or oxidizing a BaTiO₃ crystal. I have extended the “hopping conduction” model of photorefractive transport to include simultaneous electron and hole photoconduction. The extension of …

Evidence For The Existence Of Two Stable Sites For Cobalt Impurity Atoms In Aluminum, Arun Venkatachar

Dissertations and Theses

Using Fe⁵⁷Mössbauer spectroscopy, two alternative sites occupied by cobalt (10^-4 at. % ) impurity atoms in aluminum have been isolated. The substitutional site A is the stable position after annealing the sample above 840 K, followed by a rapid quench. The impurity atoms in site A are characterized by a single line Mössbauer spectrum (indicative of a cubic environment), a room-temperature f = 0.502 (r. m. s. displ. 0.071 A) and an I. S. (reI. to Fe) = -0.421 mm/sec. For anneals below 770 K the cobalt atoms migrate to site B, which is characterized by a …