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Articles 451 - 480 of 488

Full-Text Articles in Physics

Seam Wave Characteristics In An Eastern U.S. Coal, Paul J. Wolfe, Timothy G. Holdeman, Benjamin H. Richard Jan 1983

Seam Wave Characteristics In An Eastern U.S. Coal, Paul J. Wolfe, Timothy G. Holdeman, Benjamin H. Richard

Physics Faculty Publications

No abstract provided.

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Nitrogen Escape From Mars, Jane L. Fox, Alexander Dalgarno Jan 1983

Nitrogen Escape From Mars, Jane L. Fox, Alexander Dalgarno

Physics Faculty Publications

The escape rate of nitrogen from Mars is calculated to be 2.3×105 s−1 for low solar flux conditions and 8.9×105 s−1 for high solar flux conditions. The major source of energetic atoms is dissociative recombination of ground state and vibrationally excited N2+ ions. The measured 15N/14N isotope ratio can be reproduced by postulating an early dense atmosphere during which little differentiation occurred.

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Positive Identification Of The Cr(4+)-->Cr(3+) Thermal Transition In Gaas, David C. Look, S. Chaudhuri, L. Eaves Dec 1982

Positive Identification Of The Cr(4+)-->Cr(3+) Thermal Transition In Gaas, David C. Look, S. Chaudhuri, L. Eaves

Physics Faculty Publications

Temperature-dependent Hall-effect measurements on two Cr-doped GaAs samples
show a dominant center at E1 =0.324—1.4 x 10-4T eV, with respect to the valence-band edge. By comparison with secondary-ion mass spectroscopy measurements of the Cr concentration, and recent EPR measurements of the Cr2+, Cr3+, and Cr4+ concentration in several samples, it is shown unambiguously that this energy describes the Cr4+→Cr3+ transition. This is the first conclusive evidence for a charge-state transition involving Cr4+ in GaAs.

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Magneto-Hall And Magnetoresistance Coefficients In Semiconductors With Mixed Conductivity, David C. Look Feb 1982

Magneto-Hall And Magnetoresistance Coefficients In Semiconductors With Mixed Conductivity, David C. Look

Physics Faculty Publications

Magneto-Hall and magnetoresistance formulas, correct to order B2, are derived for the case in which both single-carrier and mixed-carrier effects are important. Also, a new magneto-Hall coefficient Is Presented: β=‹π4›‹π›/‹π2›3 - 1. Values of β for various scattering mechanisms are calculated and compared with experiment

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A Stratospheric Chemical Instability, Jane L. Fox, Steven C. Wofsy, Michael B. Mcelroy, Michael J. Prather Jan 1982

A Stratospheric Chemical Instability, Jane L. Fox, Steven C. Wofsy, Michael B. Mcelroy, Michael J. Prather

Physics Faculty Publications

The equations which determine partitioning of Clx in steady state have multiple (three) solutions under conditions which might arise in the high-latitude winter stratosphere. Two of these solutions are stable, one is unstable, to infinitesimal perturbations. The relative stability of solutions is examined by subjecting the system to finite perturbations. The more stable solution is found to eliminate the less stable when semi-infinite volumes of the two solutions are placed in contact. The high-ClO, low-NO2 solution is more stable under most conditions. Transitions from less to more stable states are slow in winter but may occur more rapidly …

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Atomic Carbon In The Atmosphere Of Venus, Jane L. Fox Jan 1982

Atomic Carbon In The Atmosphere Of Venus, Jane L. Fox

Physics Faculty Publications

The densities of atomic carbon in the Venusian thermosphere are computed for a model which includes both chemistry and transport. The maximum density of C is 2.8×107 cm−3 near 150 km for an assumed O2 mixing ratio of 1×10−4. Photoionization of atomic carbon is found to be the major source of C+ above 200 km, and resonance scattering of sunlight by atomic carbon may be the major source of the C I emissions at 1561 Å, 1657 Å, and 1931 Å. The computed C+ densities are found to be in substantial agreement with …

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Statistics Of Multicharge Centers In Semiconductors - Applications, David C. Look Nov 1981

Statistics Of Multicharge Centers In Semiconductors - Applications, David C. Look

Physics Faculty Publications

A general formula is derived for the electron occupation numbers appropriate for multicharge centers in semiconductors, including excited states. The results are used to rederive and generalize several formulas of interest in the literature, in order to show exactly how the degeneracies of individual states enter in. Particular attention is paid to certain subjects which are sometimes confusing, such as how the statistics of band states differ from those those of localized states. Another subject of much recent interest, negative-U centers, is dealt with in some detail. We show how the dependence of the average occupation number on Fermi …

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O++ In The Venusian Ionosphere, Jane L. Fox, G. A. Victor Jan 1981

O++ In The Venusian Ionosphere, Jane L. Fox, G. A. Victor

Physics Faculty Publications

It is shown that the revised photochemical theory for O++ in the earth's ionopshere, where double photoionization of O is the dominant source, is consistent with recent O++ measurements on Venus. A rate coefficient of 1.5 × 10−10 cm³ s−1 for O++ + O is obtained, and the possible importance of O++ chemistry on minor atomic ions and airglow emissions is explored.

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Automation Of A Popular Monochromator, David C. Look, J. W. Farmer, R. N. Ely Jul 1980

Automation Of A Popular Monochromator, David C. Look, J. W. Farmer, R. N. Ely

Physics Faculty Publications

A wavelength‐scan and intensity‐control system for a widely‐used, high‐intensity monochromator is described. The wavelength scan is bidirectional and variable speed, and may be controlled manually or by TTL logic from a computer. The intensity control is effected by use of a programmable dc power supply and D–A converter. Various filters are described which allow an intensity of up to 2×1014 photons/cm2 s to be achieved in a 1 cm×3 cm area over a wavelength range 0.76–2.50 μm, at 0.07 μm bandwidth, with a single grating. (A lesser intensity is available to 3.4 μm.) This wide range is made …

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Electron Irradiation Defects In N-Type Gaas, J. W. Farmer, David C. Look Apr 1980

Electron Irradiation Defects In N-Type Gaas, J. W. Farmer, David C. Look

Physics Faculty Publications

We have studied the production and annealing of defects produced by 1-MeV electron irradiation of n-type GaAs. Two of these defects lie at 0.15 and 0.31 eV from the conduction band, respectively; in addition, there is at least one acceptor much closer to the valence band. The carrier-removal rate depends upon sample purity but is independent of the irradiation flux. The removal rate is also highly dependent upon the position of the the Fermi level, an effect which is considered in some detail. At about 200°C, the defects recover in two stages, with the respective recovery rates given by λ …

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Characterization Of Phase Transitions In Vanadium Deuterides, R. L. Tober, Gust Bambakidis Jan 1980

Characterization Of Phase Transitions In Vanadium Deuterides, R. L. Tober, Gust Bambakidis

Physics Faculty Publications

No abstract provided.

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Model For Fe2+ Intracenter-Induced Photoconductivity In Inp: Fe, David C. Look Nov 1979

Model For Fe2+ Intracenter-Induced Photoconductivity In Inp: Fe, David C. Look

Physics Faculty Publications

We have observed a broad, room-temperature photoconductivity band, with a peak at 0.44 eV, in Fe-doped InP. This band is attributed to an Fe2+ intracenter optical excitation, followed by a thermal excitation to the conduction band. We derive a photoconductivity expression which takes into account optical and thermal transitions between impurity ground and excited states, within the band gap, and the conduction band. The parameters yielded by the model include a thermal excitation prefactor of 1×1011 sec-1, an electron capture cross section of 1×10-15 cm2, a spontaneous recombination coefficient of 1×106 sec …

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Type Conversion In Electron‐Irradiated Gaas, J. W. Farmer, David C. Look Apr 1979

Type Conversion In Electron‐Irradiated Gaas, J. W. Farmer, David C. Look

Physics Faculty Publications

The unambiguous type conversion of GaAs by electron irradiation is reported here for the first time. Several high‐quality n‐type vapor‐phase epitaxial layers (ρ?3 Ω cm and μ?7000 cm2/V sec at 300 K) were converted by 1‐MeV electrons to high‐quality p‐type layers (ρ?30 Ω cm and μ?400 cm2/V sec). Temperature‐dependent Hall‐effect data show energy levels at 0.5, 0.3, and about 0.1 eV above the valence band. Evidence is presented to indicate that the failure of some of our samples (and, perhaps, other samples reported in the literature) to convert to low‐r …

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Ionization, Luminosity, And Heating Of The Upper Atmosphere Of Mars, Jane L. Fox, Alexander Dalgarno Jan 1979

Ionization, Luminosity, And Heating Of The Upper Atmosphere Of Mars, Jane L. Fox, Alexander Dalgarno

Physics Faculty Publications

A model based upon Viking data is constructed of the Martian atmosphere, and a comprehensive quantitative discussion is given of the measurements of the ultraviolet dayglow. A detailed assessment is made of the heating of the neutral and ionized components of the atmosphere arising from the absorption of ultraviolet solar radiation.

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Electronic Structure Calculation Of Icosahedral B-12, R. P. Wagner, Gust Bambakidis Jan 1979

Electronic Structure Calculation Of Icosahedral B-12, R. P. Wagner, Gust Bambakidis

Physics Faculty Publications

No abstract provided.

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Electrical Resistivity Studies Of Order-Disorder Phenomena In V2h And V2d, Gust Bambakidis, M. W. Pershing, R. C. Bowman Jan 1979

Electrical Resistivity Studies Of Order-Disorder Phenomena In V2h And V2d, Gust Bambakidis, M. W. Pershing, R. C. Bowman

Physics Faculty Publications

No abstract provided.

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Infrared Spectral Detectivity Of Cr‐Doped Gaas, David C. Look Jun 1978

Infrared Spectral Detectivity Of Cr‐Doped Gaas, David C. Look

Physics Faculty Publications

The room‐temperature spectral detectivity of Cr‐doped GaAs has been examined in the impurity excitation region out to 1.7 μ, a range which includes the wavelengths of several important lasers as well as low‐loss optical fibers. The results include values of D∗ greater than 1011 cm Hz1/2/W in the photoconductive mode, and 1010 cm Hz1/2/W in the photomagnetoelectric mode. Small carrier lifetimes, ∼10−8 sec, offer the potential of high‐speed operation; however, the measured response times are much larger, ∼10−3–10−2 sec, because of very high input impedances. Formulas are presented to …

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Interpretation Emphasis In Exploration Geophysics, Paul J. Wolfe, Benjamin H. Richard Jan 1978

Interpretation Emphasis In Exploration Geophysics, Paul J. Wolfe, Benjamin H. Richard

Physics Faculty Publications

No abstract provided.

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Impurity Photomagnetoelectric Effect: Application To Semi-Insulating Gaas, David C. Look Dec 1977

Impurity Photomagnetoelectric Effect: Application To Semi-Insulating Gaas, David C. Look

Physics Faculty Publications

The theories of the photomagnetoelectric (PME) and photoconductivity (PC) effects in semiconductors are extended to include unequal excitation rates of holes and electrons, as might be expected from impurity photo-excitation. The results are applied to two semi-insulating Cr-doped GaAs crystals, which exhibit mixed conductivity. It is seen that the PC and PME effects give complementary information on the holes and electrons. In the impurity excitation region the PME current responds strongly to changes in the absorption coefficient, and provides a convenient way to study this quantity.

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The Electrical Characterization Of Semi‐Insulating Gaas: A Correlation With Mass‐Spectrographic Analysis, David C. Look Dec 1977

The Electrical Characterization Of Semi‐Insulating Gaas: A Correlation With Mass‐Spectrographic Analysis, David C. Look

Physics Faculty Publications

The room‐temperature electrical properties of 28 semi‐insulating GaAs crystals have been determined by using a mixed‐conductivity analysis. It is shown that for most of these samples, such an analysis gives good accuracy for the electron mobility μn and electron concentration n, but poorer accuracy for the hole mobility μp, hole concentration p, and intrinsic concentration ni. The intrinsic concentration is determined at 296 °K to be ni ≈ (1.7±0.4) ×106 cm−3, which compares favorably with the theoretical value deduced from the band gap and the effective masses. From a …

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Positron Annihilation In Copper, K. White, W. H. Rickles, Thomas Listerman Jan 1977

Positron Annihilation In Copper, K. White, W. H. Rickles, Thomas Listerman

Physics Faculty Publications

No abstract provided.

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A Geomagnetic Survey Of Greene County, Ohio, V. E. D. Obot, Paul J. Wolfe Jan 1977

A Geomagnetic Survey Of Greene County, Ohio, V. E. D. Obot, Paul J. Wolfe

Physics Faculty Publications

No abstract provided.

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The Nitrogen Dayglow On Mars, Jane L. Fox, Alexander Dalgarno, E. R. Constantinides, G. A. Victor Jan 1977

The Nitrogen Dayglow On Mars, Jane L. Fox, Alexander Dalgarno, E. R. Constantinides, G. A. Victor

Physics Faculty Publications

The ultraviolet dayglow spectrum arising from emission of N2 in the Mars atmosphere is predicted. The intensities are such that a high-resolution spectrum should readily reveal the presence of N2 at the abundances suggested by the Viking experiments.

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Radiative Transition Probabilities Of The 1S2P22P And 1S2P22D States Of The Lithium Isoelectronic Sequence, Jane L. Fox, Alexander Dalgarno Jan 1977

Radiative Transition Probabilities Of The 1S2P22P And 1S2P22D States Of The Lithium Isoelectronic Sequence, Jane L. Fox, Alexander Dalgarno

Physics Faculty Publications

A Z-expansion procedure is used to obtain eigenvalues and eigenfunctions for the 1s22p2Po, 1s2p22P, and 1s2p22D states of the lithium sequence. Expansions in inverse powers of the nuclear charge Z are obtained also for the dipole-matrix elements and oscillator strengths of the 1s22p2Po-1s2p22P and 1s22p2Po-1s2p22D transitions, valid for Z > 3. …

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Hall-Effect Measurements In Cd-Implanted Gaas, B. K. Shin, David C. Look, Y. S. Park, J. E. Ehret Apr 1976

Hall-Effect Measurements In Cd-Implanted Gaas, B. K. Shin, David C. Look, Y. S. Park, J. E. Ehret

Physics Faculty Publications

Cadmium ions were implanted in GaAs crystals at 135 keV to doses ranging from 1012 to 1016 ion/cm2 at room temperature. Sheet‐resistivity and Hall‐effect measurements were carried out as a function of temperature, 4.2–300°K, after annealings at 700, 800, or 900°C in an Ar ambient. The sample surfaces were protected with pyrolytically deposited Si3N4. Significant p‐type conduction was observed when samples with doses ≳1013cm−2 were annealed at ≳700°C. For doses below 1014 cm−2 nearly complete electrical activity was attained after an 800–900°C anneal. The Cd profiles were …

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Ohmic Contacts To Al‐Implanted Znse, B. K. Shin, David C. Look, Y. S. Park Mar 1975

Ohmic Contacts To Al‐Implanted Znse, B. K. Shin, David C. Look, Y. S. Park

Physics Faculty Publications

No abstract provided.

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Electrical Characteristics Of Al‐Implanted Znse, B. K. Shin, Y. S. Park, David C. Look May 1974

Electrical Characteristics Of Al‐Implanted Znse, B. K. Shin, Y. S. Park, David C. Look

Physics Faculty Publications

Aluminum was implanted in ZnSe at 90 keV to a dose of 1015 ions/cm2 at room temperature. Hall‐effect and sheet‐resistivity measurements were made on the samples for various annealing conditions. The implanted layer is found to be degenerate n‐type having a sheet resistivity of ∼103 Ω/□, after annealing at 900°C for 4 h.

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High-Temperature Annealing In Electron-Irradiated Cds, David C. Look Jan 1974

High-Temperature Annealing In Electron-Irradiated Cds, David C. Look

Physics Faculty Publications

The room‐temperature irradiation of as‐grown n‐type CdS by 1‐MeV electrons results in an increase in carrier concentration. The damage anneals in the temperature range 250–300°C, and a study of the annealing kinetics reveals an activation energy of about 1.3 eV which is attributed to sulfur‐vacancy motion.

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Proton-Scattering On (29)Si In Range Ep = 2.5-3.4 Mev*, Joseph W. Hemsky, S. C. Ling, Paul J. Wolfe Jul 1973

Proton-Scattering On (29)Si In Range Ep = 2.5-3.4 Mev*, Joseph W. Hemsky, S. C. Ling, Paul J. Wolfe

Physics Faculty Publications

Elastic and inelastic proton scattering measurements on Elastic and inelastic proton scattering measurements on 29Si have been obtained in the energy range Ep = 2.5-3.4 MeV. 30 elastic and 32 inelastic resonances were observed. 14 prominent resonances from elastic scattering were analyzed. Results of the analysis for proton orbital momenta, spin and parity assignments, and proton partial widths are given. The inelastic resonance strengths measured relative to the known strength of the 1302-keV resonance in 29Si(p,y)30P are also reported.

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Nuclear-Magnetic-Resonance Study Of Co2+ In Cds, David C. Look, Donald R. Locker Aug 1972

Nuclear-Magnetic-Resonance Study Of Co2+ In Cds, David C. Look, Donald R. Locker

Physics Faculty Publications

Nuclear spin-lattice relaxation times, T1, have been measured over a temperature range T=(1.1-300) °K and frequency range ν=2-15 MHz in a single crystal of CdS doped with 13-ppm cobalt. Minima in T1 vs T are observed, and absolute values of the effective electron relaxation time, τe, may be calculated at the temperatures of the minima, e.g., at 14 °K, τe=8.0×10-8 sec. At low temperatures, T≲5 °K, τe is dominated by a resonant Orbach process involving the two ground-state Kramers doublets (S=±3/2 and S=±1/2) which, according to our measurements, are split by …

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