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Articles 421 - 450 of 488

Full-Text Articles in Physics

Silicon Crystallite Formation In Ion-Implanted Quartz, U. B. Ramabadran, H. E. Jackson, Gary C. Farlow Sep 1989

Silicon Crystallite Formation In Ion-Implanted Quartz, U. B. Ramabadran, H. E. Jackson, Gary C. Farlow

Physics Faculty Publications

Rapid thermally annealed silicon‐implanted x‐cut α‐quartz samples have been examined by Rutherford backscattering and Raman microprobe spectroscopy. The data indicate that the silicon has diffused at 1200 °C to form a buried layer of crystallites of size 1–10 μm. The crystallites are preferentially oriented and under substantial stress.

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Uniformity Of 3-In, Semi-Insulating, Vertical-Gradient-Freeze Gaas Wafers, David C. Look, D. C. Walters, M. G. Mier, J. S. Sewell, J. S. Sizelove, A. Akselrad, J. E. Clemans Jul 1989

Uniformity Of 3-In, Semi-Insulating, Vertical-Gradient-Freeze Gaas Wafers, David C. Look, D. C. Walters, M. G. Mier, J. S. Sewell, J. S. Sizelove, A. Akselrad, J. E. Clemans

Physics Faculty Publications

We have evaluated the uniformity in [EL2], dislocation (or etch‐pit) density (EPD), resistivity, mobility, and carrier concentration for 3‐in., semi‐insulating GaAs wafers grown by the vertical‐gradient‐freeze (VGF) technique. Although slight W or U patterns were observed in [EL2] and EPD along the 〈110〉 directions, for the first time, nevertheless the overall uniformity was excellent, and comparable to that in the best In‐doped and whole‐boule‐annealed ingots grown by the liquid‐encapsulated Czochralski (LEC) technique. Based on results from implant‐activation studies on LEC wafers, it is estimated that the measured nonuniformities in EPD and [EL2] for the VGF wafers would contribute only about …

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Photodissociation Of Co In The Thermosphere Of Venus, Jane L. Fox Apr 1989

Photodissociation Of Co In The Thermosphere Of Venus, Jane L. Fox

Physics Faculty Publications

Recent investigations of CO photoabsorption demonstrate that photodissociation longward of the ionization threshold at 88.5 nm occurs primarily through line absorptions rather than continuous processes. We have constructed high resolution photoabsorption cross sections for CO at rotational temperatures near 250 K from the improved data on dissociating transitions. We examine the effects of the new cross sections on the rate of solar photodissociation of CO in the thermosphere of Venus and compare the results to values obtained with the lower resolution cross sections available previously. We find that the photodissociation profile peaks slightly higher in the atmosphere and the peak …

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Determination Of Shallow Minority-Acceptor Concentration In Multiply Doped Silicon, Gust Bambakidis, G. J. Brown Apr 1989

Determination Of Shallow Minority-Acceptor Concentration In Multiply Doped Silicon, Gust Bambakidis, G. J. Brown

Physics Faculty Publications

A method is presented, based on photothermal ionization spectroscopy (PTIS), for determining the shallow minority‐acceptor concentration in multiply doped silicon, over the concentration range 1013/cm3–1015/cm3. The method is an extension of a model developed previously for the PTIS response in a multiply doped semiconductor, which accounts for the experimentally observed change in signature, from negative to positive, of the lower‐energy lines of the deeper acceptor as the temperature is increased. It uses a calculated curve of the dependence on the shallow‐acceptor concentration of the temperature at which the change in …

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A New Technique For Whole-Wafer Etch-Pit Density Mapping In Gaas, David C. Look, D. C. Walters, J. S. Sewell, S. C. Dudley, M. G. Mier, J. S. Sizelove Feb 1989

A New Technique For Whole-Wafer Etch-Pit Density Mapping In Gaas, David C. Look, D. C. Walters, J. S. Sewell, S. C. Dudley, M. G. Mier, J. S. Sizelove

Physics Faculty Publications

The pits formed on an etched GaAs surface, due to the anisotropic etching around dislocations, are efficient light scatterers, and thus reduce transmission. We have derived a quantitative relationship between the fractional transmission and the etch‐pit density (EPD) and have shown that the same absorption apparatus which is commonly used to obtain a whole‐wafer [EL2] map can also be used to generate an EPD map. The technique is verified by comparing the fractional transmission with the actual EPD count at 166 points on a three‐inch, low‐pressure, liquid‐encapsulated Czochralski wafer. Also, [EL2] and EPD maps, with more than 3500 points each, …

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Contact Resistance Measurements In Gaas Mesfet's And Modfet's By The Magneto‐Tlm Technique, David C. Look Jan 1988

Contact Resistance Measurements In Gaas Mesfet's And Modfet's By The Magneto‐Tlm Technique, David C. Look

Physics Faculty Publications

The standard transmission‐line model (TLM) for specific contact resistivity measurements of planar contacts is improved in two ways: (i) the addition of a magnetic field, which gives the mobility and carrier concentration of the bulk material, and the mobility of the material under the contact; and (ii) an extension to two layers, which makes the model applicable to MODFET structures. The results are applied to MESFET material, and MODFET material. One conclusion concerning the latter material is that the electrons directly beneath the annealed Au/Ge/Ni contacts have lower mobility than those in the bulk, but still …

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Defect Production In Electron-Irradiated, N-Type Gaas, David C. Look, J. R. Sizelove Nov 1987

Defect Production In Electron-Irradiated, N-Type Gaas, David C. Look, J. R. Sizelove

Physics Faculty Publications

Temperature-dependent Hall-effect measurements have been performed on pure, n-type, vapor-phase epitaxial GaAs, irradiated by 1-MeV electrons at room temperature. The energies and production rates of two dominant defect centers, C2 and C3, are as follows: E2 = EC - 0.148, E3 = EC2 = 2.0 and τ3 = 0.5 +/1 0.2 cm-1, in good agreement with deep level transient spectroscopy (DLTS) data. However, the most important result of this study is a very high production rate, τAS ≅ +/- 1 cm-1, for "shallow" acceptors (C …

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Equivalence Of Donor And Acceptor Fits To Temperature-Dependent Hall Data: General Case, David C. Look Nov 1987

Equivalence Of Donor And Acceptor Fits To Temperature-Dependent Hall Data: General Case, David C. Look

Physics Faculty Publications

Recently, it was shown that the usual statistical-mechanical formulation used to fit carrier concentration versus temperature data cannot distinguish between the donor or acceptor nature of one single-charge-state center. Here we generalize that result to include any number of donor and acceptor centers, of arbitrary charge multiplicity, and also show how that by fitting one particular case (e.g., every center assumed to be a donor), all of the other possible cases can be immediately solved by inspection.

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Photoresistivity And Photo-Hall-Effect Topography On Semi-Insulating Gaas Wafers, David C. Look, E. Pimentel Nov 1987

Photoresistivity And Photo-Hall-Effect Topography On Semi-Insulating Gaas Wafers, David C. Look, E. Pimentel

Physics Faculty Publications

By placing a semi-insulating GaAs wafer on a fiat, rare-earth magnet, and irradiating the surface with two perpendicular slits of light to form a Greek cross configuration, it is possible to perform photoresistivity and photo-Hall-effect topography on the wafer. The technique is nondestructive in that the contacts are tiny, removable In dots which are placed only on the periphery. By varying the wavelength of the light, selective centers, such as EL2, can be mapped. We compare a 1.1-μ, photoexcited electron concentration map with a quantitative EL2 map on a 3-in. undoped, liquid-encapsulated Czochralski wafer.

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Photoluminescence In Electrically Reversible (Semiconducting To Semiinsulating) Bulk Gaas, Phil W. Yu, David C. Look, W. Ford Oct 1987

Photoluminescence In Electrically Reversible (Semiconducting To Semiinsulating) Bulk Gaas, Phil W. Yu, David C. Look, W. Ford

Physics Faculty Publications

A photoluminescence study has been made of electrically reversible, bulk, liquid-encapsulated Czochralski GaAs at temperatures 2-300 K. The reversibility from the semiconducting to the semi-insulating state is made by slow or fast cooling, respectively, following a 5-h, 950°C heat treatment in an evacuated quartz ampoule. A donor level at Ec - 0.13 eV and two acceptor levels at Ev + 0.069 eV and Ev + 0.174 eV are produced after the heat treatment. Only the acceptor levels were detected by photoluminescence. A tentative model assigning the acceptor to the intrinsic defect pair VGa-GaAs is discussed.

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High Acceptor Production Rate In Electron-Irradiated N-Type Gaas - Impact On Defect Models, David C. Look Sep 1987

High Acceptor Production Rate In Electron-Irradiated N-Type Gaas - Impact On Defect Models, David C. Look

Physics Faculty Publications

Defect production rates have been studied in electron-irradiated GaAs by temperature-dependent Hall-effect (TDR) measurements. The TDH results agree well with deep level transient spectroscopy (DLTS) results for the wen-known electron traps E1, E2, and E3, but conclusively demonstrate a much higher production rate (4 ± 1 cm-1) of acceptors below E3 than the total of all other DLTS traps. These findings strongly affect current defect models, and, e.g., are consistent with the existence of Ga sublattice damage, not seen before.

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Comparison Of Low-Energy Seismic Sources In Till, Paul J. Wolfe, B. H. Richard, Dale V. Dailey, James R. Plomer Mar 1987

Comparison Of Low-Energy Seismic Sources In Till, Paul J. Wolfe, B. H. Richard, Dale V. Dailey, James R. Plomer

Physics Faculty Publications

No abstract provided.

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Equivalence Of Donor And Acceptor Fits Of Temperature-Dependent Carrier-Concentration Data, David C. Look, J. R. Sizelove Feb 1987

Equivalence Of Donor And Acceptor Fits Of Temperature-Dependent Carrier-Concentration Data, David C. Look, J. R. Sizelove

Physics Faculty Publications

It is shown that the usual charge-balance analysis of temperature-dependent carrier-concentration data cannot distinguish between the donor and acceptor behavior of a center which is emitting carriers to a particular band, even though the statistics are different in the two cases. Other data, such as mobility or analytical results are needed to make the distinction.

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Electrical Characterization Of Ion Implantation Into Gaas, David C. Look Jan 1987

Electrical Characterization Of Ion Implantation Into Gaas, David C. Look

Physics Faculty Publications

Recent advances in the characterization of ion‐implanted samples have included whole wafer mapping (topography) and depth profiling techniques. We review several methods for mapping electrical parameters, including the dark‐spot resistance (DSR), and the microwave photoconductance techniques. In addition, we suggest a new photo‐Hall technique which would allow mobility and carrier‐concentration mapping as well as that of resistivity . Finally, we review methods for obtaining ρ, μ, and depth profiles, with particular emphasis on the application of the magnetoresistance techniques in actual field‐effect transistor structures.

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Semiconducting/Semi-Insulating Reversibility In Bulk Gaas, David C. Look, Phil W. Yu, W. M. Theis, W. Ford, G. Mathur, J. R. Sizelove, D. H. Lee, S. S. Li Oct 1986

Semiconducting/Semi-Insulating Reversibility In Bulk Gaas, David C. Look, Phil W. Yu, W. M. Theis, W. Ford, G. Mathur, J. R. Sizelove, D. H. Lee, S. S. Li

Physics Faculty Publications

Bulk, liquid-encapsulated Czochralski GaAs may be reversibly changed from semiconducting (ρ~1 Ω cm) to semi-insulating (ρ~107 Ω cm) by slow or fast cooling, respectively, following a 5 h, 950°C soak in an evacuated quartz ampoule. This effect has been studied by temperature-dependent Han-effect, photoluminescence, infrared absorption, mass spectroscopy, and deep level transient spectroscopy measurements. Except for boron, the samples are very pure, with carbon and silicon concentrations less than 3 X 1014 cm-3. Donor and acceptor concentrations, on the other hand, are in the mid 1015 cm-3 range, which means …

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Semiconducting/Semi-Insulating Reversibility In Bulk Gaas, David C. Look, Phil W. Yu, W. M. Theis, W. Ford, G. Mathur, J. R. Sizelove, D. H. Lee, S. S. Li Oct 1986

Semiconducting/Semi-Insulating Reversibility In Bulk Gaas, David C. Look, Phil W. Yu, W. M. Theis, W. Ford, G. Mathur, J. R. Sizelove, D. H. Lee, S. S. Li

Physics Faculty Publications

Bulk, liquid‐encapsulated Czochralski GaAs may be reversibly changed from semiconducting (ρ∼1 Ω cm) to semi‐insulating (ρ∼107 Ω cm) by slow or fast cooling, respectively, following a 5 h, 950 °C soak in an evacuated quartz ampoule. This effect has been studied by temperature‐dependent Hall‐effect, photoluminescence, infrared absorption, mass spectroscopy, and deep level transient spectroscopy measurements. Except for boron, the samples are very pure, with carbon and silicon concentrations less than 3×1014 cm−3. Donor and acceptor concentrations, on the other hand, are in the mid 1015 cm−3 range, which means that …

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Summary Abstract - Theoretical And Experimental Capacitance-Voltage Behavior Of Modulation-Doped Al(0.3)Ga(0.7)As/Gaas Heterojunctions, George B. Norris, David C. Look, W. Koop, J. Klem, H. Morkoç Mar 1986

Summary Abstract - Theoretical And Experimental Capacitance-Voltage Behavior Of Modulation-Doped Al(0.3)Ga(0.7)As/Gaas Heterojunctions, George B. Norris, David C. Look, W. Koop, J. Klem, H. Morkoç

Physics Faculty Publications

No abstract provided.

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Ar+ In The Terrestrial Ionosphere, Jane L. Fox Jan 1986

Ar+ In The Terrestrial Ionosphere, Jane L. Fox

Physics Faculty Publications

The Ar+ densities in the terrestrial ionosphere are computed for both low and high solar activity models. The reaction N2+(υ > 0) + Ar → N2+ Ar+ is found to be a significant source of Ar+, nearly equal to photoionization and electron impact ionization in the high solar activity model. Peak densities of Ar+ of 11 cm−3 near 190 km and 22 cm−3 near 220 km are predicted for the low and high solar activity models. It is suggested that a simultaneous measurement of Ar+ and Ar densities …

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Magnetoresistance Method To Determine Gaas And Alxga1-Xas Mobilities In Alxga1-Xas/Gaas Modulation-Doped Field-Effect Transistor Structures, David C. Look, George B. Norris, W. Kopp, T. Henderson, H. Morkoç Aug 1985

Magnetoresistance Method To Determine Gaas And Alxga1-Xas Mobilities In Alxga1-Xas/Gaas Modulation-Doped Field-Effect Transistor Structures, David C. Look, George B. Norris, W. Kopp, T. Henderson, H. Morkoç

Physics Faculty Publications

Charge carrier mobilities are conveniently measured in simple, homostructure field-effect transistors (FET's) by means of the geometric magnetoresistance (GMR) technique. Heterostructure FET's, however, are more complicated because of multiple conducting regions, as well as multiple conducting bands within a given region. We apply a multilayer GMR mobility model to a frequently used heterostructure FET design, namely, the Al0.3Ga0.7As conduction band. In the particular MODFET structure studied here, the lowest GaAs subband mobility ranges from 5.7X103 cm2/Vs at threshold to 6.9X103 cm2/Vs at saturation while Al0.3Ga0.7As mobility …

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Theoretical And Experimental Capacitance-Voltage Behavior Of Al0.3ga0.7as Gaas Modulation-Doped Heterojunctions - Relation Of Conduction-Band Discontinuity To Donor Energy, George B. Norris, David C. Look, W. Kopp, J. Klem, H. Morkoç Aug 1985

Theoretical And Experimental Capacitance-Voltage Behavior Of Al0.3ga0.7as Gaas Modulation-Doped Heterojunctions - Relation Of Conduction-Band Discontinuity To Donor Energy, George B. Norris, David C. Look, W. Kopp, J. Klem, H. Morkoç

Physics Faculty Publications

For the first time, we show that the capacitance-voltage behavior of modulation-doped heterojunctions may be accurately described by a first-principles theory that includes selfconsistent quantum two-dimensional (2-D) electron subbands in the GaAs, numerical solution of Poisson's equation for band bending and space charge in the (Al,Ga) As, and series resistance in the 2-D channel and heterointerface. The excellent agreement found between the theory and measurements on selected high-quality Al0.3Ga0.7 As/GaAs heterojunctions allows accurate determination of the maximum 2-D carrier concentration. From this, we find a strong relationship between the conduction-band discontinuity and donor binding energy, giving offsets. …

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Summary Abstract: Capacitance-Voltage Characteristics In Modulation Doped Heterojunction Fets, George B. Norris, David C. Look, W. Koop, J. Klem, H. Morkoç Mar 1985

Summary Abstract: Capacitance-Voltage Characteristics In Modulation Doped Heterojunction Fets, George B. Norris, David C. Look, W. Koop, J. Klem, H. Morkoç

Physics Faculty Publications

No abstract provided.

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Schottky-Barrier Profiling Techniques In Semiconductors - Gate Current And Parasitic Resistance Effects, David C. Look Jan 1985

Schottky-Barrier Profiling Techniques In Semiconductors - Gate Current And Parasitic Resistance Effects, David C. Look

Physics Faculty Publications

The theory for obtaining mobility and carrier concentration profiles by the Hall-effect, magnetoresistance, and capacitance-conductance methods is developed in the relaxation-time approximation. This theory is then applied to semiconductors in which a Schottky barrier is used to control a depletion region. Particular emphasis is given to field-effect transistor structures which are ideally suited for geometric magnetoresistance measurements. A unique feature of the present model is the correction for finite gate (Schottky-barrier) current, which can be very important under forward-gate-bias conditions. The ability to use forward-bias makes the near-surface region more accessible. Also, parasitic resistance effects are treated. We apply these …

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The Vibrational Distribution Of N2+ In The Terrestrial Ionosphere, Jane L. Fox, Alexander Dalgarno Jan 1985

The Vibrational Distribution Of N2+ In The Terrestrial Ionosphere, Jane L. Fox, Alexander Dalgarno

Physics Faculty Publications

The densities and vibrational distributions of N2+ in the X²Σg+, A²Πu, and B²Σu+ states in the daytime terrestrial ionosphere are computed for both low and high solar activity. Altitude profiles of the relative populations of the vibrational levels of N2+X²Σg+ are presented. The fraction of vibrationally excited N2+ varies from 5% at 100 km to 50% at 450 km. Several models are examined in which loss of N2+(v) is enhanced for v > 0 and in …

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A Simple Model For Impurity Photoabsorption In Silicon, Gust Bambakidis Jun 1984

A Simple Model For Impurity Photoabsorption In Silicon, Gust Bambakidis

Physics Faculty Publications

A simple model for absorption of infrared radiation by impurity atoms in silicon crystals has been developed and applied to electronic excitations ofthe Group V donors Bi, Sb, As, and P, and the Group III acceptors B, AI, Ga, and In. The model is based on the quantum-defect method for approximating bound donor or acceptor wave functions outside the core region of the impurity. For each donor species, the relative oscillator strengths have been calculated for the transitions from the ground state to the first four excited levels. For each acceptor species, the relative oscillator strengths were calculated for transitions …

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Delineation Of A Coal Burn Edge With Seismic Refraction, Karen D. Sontag, Paul J. Wolfe Jan 1984

Delineation Of A Coal Burn Edge With Seismic Refraction, Karen D. Sontag, Paul J. Wolfe

Physics Faculty Publications

No abstract provided.

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Hole Transport In Pure And Doped Gaas, H. J. Lee, David C. Look Aug 1983

Hole Transport In Pure And Doped Gaas, H. J. Lee, David C. Look

Physics Faculty Publications

We have used a two-band model (heavy and light holes) to calculate the transport properties ofp-type GaAs. The scattering mechanisms included are acoustic-mode deformation potential, acoustic-mode piezoelectric potential, polar- and nonpolar-mode deformation potential, ionized impurity, and space charge. Interband scattering is included explicitly for the optical phonons and phenomenologically for the acoustic phonons. The intraband polar optical-mode scattering, for which a relaxation time cannot be defined, was calculated by using the numerical method of Fletcher and Butcher. The acoustic deformation-potential parameter and the coupling coefficient for interband scattering were calculated by fitting the theory to Hall-mobility data for both pure …

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Low Compensation Vapor-Phase Epitaxial Gallium-Arsenide, P. C. Colter, David C. Look, D. C. Reynolds Aug 1983

Low Compensation Vapor-Phase Epitaxial Gallium-Arsenide, P. C. Colter, David C. Look, D. C. Reynolds

Physics Faculty Publications

Vapor phase epitaxial gallium arsenide (GaAs) layers, with lower compensation ratios than any reported heretofore, have been reproducibly grown by the Ga/H2/AsCl3 method. One of these samples has been studied extensively by electrical measurements and shows an acceptor concentration of (2.0 ± 0.7)X1013 cm-3 , and a compensation rate of NA/ND = 0.06 ± 0.02. These numbers are supported by magnetophotothermal spectroscopy and photoluminescence measurements. The preparation involves growth on [211A] substrates, and a pregrowth bakeout of the Ga source, which results in a significantly lower Zn acceptor concentration in the layer. …

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Electrical-Properties Of Low-Compensation Gaas, David C. Look, P. C. Colter Jul 1983

Electrical-Properties Of Low-Compensation Gaas, David C. Look, P. C. Colter

Physics Faculty Publications

Recently we have reproducibly grown vapor-phase epitaxial GaAs, with less than 10% compensation, in an AsC13-Ga-H2 reactor. The low-temperature electrical properties of such samples are quite interesting, with neutral-impurity scattering and screening being much more important than usual. The Hall mobility is typically above 105 cm2/V sec at 5 K and has two maxima as a function of temperature, the usual one near 50 K and another near 9 K, The latter phenomenon has not been observed before, to our knowledge, The mobility and carrier concentration temperature dependences for a low-compensation sample and a …

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A Study Of The 0.1-Ev Conversion Acceptor In Gaas, David C. Look, Gernot S. Pomrenke Jun 1983

A Study Of The 0.1-Ev Conversion Acceptor In Gaas, David C. Look, Gernot S. Pomrenke

Physics Faculty Publications

Two semi-insulating liquid-encapsulated Czochralski GaAs cyrstals, one Cr-doped and the other undoped, were annealed at 750°C for 15 min in flowing H2. Each sample converted to conducting p type in the near-surface region, due to the formation of acceptors at E∪ + 0.1 eV. We have studied this phenomenon by electrical, optical, and analytical profiling techniques, and have determined conclusively that the acceptors in our samples are not related to Mn accumulation, a commonly accepted explanation. It is argued that the O.I-e V center may arise from several possible sources, each exhibiting a VGa -like state at …

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Defect Nature Of The 0.4-Ev Center In O-Doped Gaas, David C. Look, S. Chaudhuri, J. R. Sizelove May 1983

Defect Nature Of The 0.4-Ev Center In O-Doped Gaas, David C. Look, S. Chaudhuri, J. R. Sizelove

Physics Faculty Publications

We have studied the Ec - 0.4 e V center in O-doped GaAs by a combination of temperature-dependent Hall-effect measurements, spark-source mass spectroscopy, and secondary-ion mass spectroscopy. The conclusion is that neither 0 nor any other impurity can account for the O.4-eV center; therefore, it is a pure defect.

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