Physics Commons^™

Identification Of Point Defects In Hvpe-Grown Gan By Steady-State And Time-Resolved Photoluminescence, Michael A. Reshchikov, Denis O. Demchenko, A Usikov, H Helava, Yu. Makarov

Forensic Science Publications

We have investigated point defects in GaN grown by HVPE by using steady-state and time-resolved photoluminescence (PL). Among the most common PL bands in this material are the red luminescence band with a maximum at 1.8 eV and a zero-phonon line (ZPL) at 2.36 eV (attributed to an unknown acceptor having an energy level 1.130 eV above the valence band), the blue luminescence band with a maximum at 2.9 eV (attributed to ZnGa), and the ultraviolet luminescence band with the main peak at 3.27 eV (related to an unknown shallow acceptor). In GaN with the highest quality, the dominant defect-related …

Defect-Related Luminescence In Undoped Gan Grown By Hvpe, Michael A. Reshchikov, A Usikov, H Helava, Yu. Makarov

Forensic Science Publications

Hydride vapor phase epitaxy (HVPE) is used for the growth of low-defect GaN. We have grown undoped films on sapphire and investigated them using steady-state and time-resolved photoluminescence (PL). One of the dominant PL bands in high-quality GaN grown by HVPE is the green luminescence (GL) band with a maximum at 2.4 eV. This PL band can be easily recognized in time-resolved PL measurements due to its exponential decay even at low temperatures (<50 K), with a characteristic lifetime of 1–2 μs. As the temperature increases from 70 K to 280 K, the PL lifetime for the GL band increases by an order of magnitude. This …

A New Silicon Phase With Direct Band Gap And Novel Optoelectronic Properties, Yaguang Guo, Qian Wang, Yoshiyuki Kawazoe, Puru Jena

Physics Publications

Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. In addition, this new allotrope displays large carrier mobility (~104 cm/V · s) at room temperature and a low mass density (1.71 g/cm3), making …

Femtosecond Laser Beam Propagation Through Corneal Tissue: Evaluation Of Therapeutic Laser-Stimulated Second And Third-Harmonic Generation, William R. Calhoun Iii

Theses and Dissertations

One of the most recent advancements in laser technology is the development of ultrashort pulsed femtosecond lasers (FSLs). FSLs are improving many fields due to their unique extreme precision, low energy and ablation characteristics. In the area of laser medicine, ophthalmic surgeries have seen very promising developments. Some of the most commonly performed surgical operations in the world, including laser-assisted in-situ keratomileusis (LASIK), lens replacement (cataract surgery), and keratoplasty (cornea transplant), now employ FSLs for their unique abilities that lead to improved clinical outcome and patient satisfaction.

The application of FSLs in medical therapeutics is a recent development, and although …

Enhanced Nanopore Detection Via Diffusion Gradients And Optical Tweezers, Kyle T. Brady

Theses and Dissertations

Nanopore-based resistive pulse sensing represents an important class of single-molecule measurements. It provides information about many molecules of interest (i.e. DNA, proteins, peptides, clusters, polymers, etc.) without the need for labeling. Two experiments that are especially well suited for studying with nanopore sensors are DNA sequencing and DNA-protein force measurements. This thesis will describe progress that has been made in both areas.

DNA sequencing has become an active area of research for stochastic single-molecule sensing, with many researchers striving for the ultimate goal of single-molecule de novo DNA sequencing. One intriguing method towards that goal involves the use of a …

Surface Photovoltage Transients For P-Type Algan, Karen L. Phumisithikul

Theses and Dissertations

There is an understanding of surface photovoltage (SPV) behavior for GaN, yet little is known about the SPV behavior for AlGaN. In this work, a Kelvin probe was used to measure the SPV for p-type AlGaN. Very slow SPV transients were found in AlGaN, which could not be explained with a simple thermionic model. A possible explanation of this behavior is the segregation of impurities to the surface, which causes significant reduction of the depletion region width (down to 2 nm), with carrier tunneling and hopping becoming the dominant mechanisms responsible for the SPV transients. To verify this assumption, …

Λcdm Cosmology + Chaotic Inflation, Peter A. Farago

Theses and Dissertations

ΛCDM cosmology is described in terms of general relativity and the Robertson-Walker metric. The evolution of the observable universe, currently dominated by dark energy (Λ) and cold dark matter (CDM), is presented in terms of its thermal history. CDM is extended to include an inflation epoch that accelerates the early expansion rate to near exponential levels. It is shown that inflation solves several problems in CDM and produces perturbations in the metric that lead to the observed anisotropies in the Cosmic Microwave Background and the formation of large scale cosmological structures. Various theories of inflation are explored. Predictions of inflation …

Silicon Nanostructures For High Capacity Anodes In Lithium Ion Batteries, Tyler M. Selden

Theses and Dissertations

In this study we looked at several different silicon nanostructures grown for the purpose of optimizing anodes for lithium ion batteries. We primarily focused on two distinct types of structures, nanospirals, and Rugate structures. The samples were designed to have the mechanical robustness to endure the massive expansion caused by lithiation of silicon. All of the samples were grown using an electron beam evaporator. Scanning electron microscope images show that we have achieved the desired structural growth. The spirals were shown to have an average diameter of 343 nm on polished copper, and 366 nm on unpolished copper. The Rugate …

High Speed Atomic Force Microscope Design Using Dvd Optics, Thomas Carlson

Theses and Dissertations

We examine the design of a high speed atomic force microscope using an optical pickup from a commercially available compact disc/digital versatile disc drive. An investigation of the commercial optical pickup is done with the goal of determining how it can be used for dimensional measurements on nanometer scale. An evaluation of noise sources, imaging capabilities, and functionality is performed.

Investigating Mechanical Properties Of Metallic Nanowires Using Molecular Dynamics, Alex Khammang

Theses and Dissertations

Metallic nanowires have useful applications in scanning tunneling microscopes and atomic force microscopes due to their unique sensitivity to force and electricity. These unique properties arise because of the large surface area to volume ratio. One of these properties is that introducing twinning planes the mechanical properties of metallic nanowires can be altered. The effects of twinning planes on metallic nanowires were studied using molecular dynamics simulations. Silver, copper, and nickel nanowires with and without twinning planes were simulated with engineering strain until the first yielding stress was obtained. The radial simulations showed that as the radius of twinned nanowires …

Aromaticity Rules In The Development Of Negative Ions, Brandon Child

Theses and Dissertations

Organic molecules are known for their stability due to aromaticity. Superhalogens, on the other hand, are highly reactive anions, whose electron affinity is larger than that of chlorine. This thesis, using first principles calculations, explores possible methods for creation of superhalogen aromatic molecules while attempting to also develop a fundamental understanding of the physical properties behind their creation. The first method studied uses anionic cyclopentadienyl and enhances its electron affinity through ligand substitution or ring annulation in combination with core substitutions. The second method studies the possibilities of using benzene, which has a negative electron affinity (EA), as a core …

Potential Of Zro Clusters As Replacement Pd Catalyst, Swayamprabha Behera, Nicholas King, Devleena Samanta, Puru Jena

Physics Publications

Atomic clusters with specific size and composition and mimicking the chemistry of elements in the periodic table are commonly known as superatoms. It has been suggested that superatoms could be used to replace elements that are either scarce or expensive. Based on a photoelectron spectroscopy experiment of negatively charged ions, Castleman and co-workers [Proc. Natl. Acad. Sci. U.S.A.107, 975 (2010)] have recently shown that atoms of Ni, Pd, and Pt which are well known for their catalytic properties, have the same electronic structure as their counterpart isovalent diatomic species, TiO, ZrO, and WC, respectively. Based on this similarity they have …

Live Cell Interferometry Quantifies Dynamics Of Biomass Partitioning During Cytokinesis, Thomas A. Zangle, Michael A. Teitell, Jason Reed

Physics Publications

The equal partitioning of cell mass between daughters is the usual and expected outcome of cytokinesis for self-renewing cells. However, most studies of partitioning during cell division have focused on daughter cell shape symmetry or segregation of chromosomes. Here, we use live cell interferometry (LCI) to quantify the partitioning of daughter cell mass during and following cytokinesis. We use adherent and non-adherent mouse fibroblast and mouse and human lymphocyte cell lines as models and show that, on average, mass asymmetries present at the time of cleavage furrow formation persist through cytokinesis. The addition of multiple cytoskeleton-disrupting agents leads to increased …

Time-Resolved Photoluminescence From Defects In N-Type Gan, Michael A. Reshchikov

Physics Publications

Point defects in GaN were studied with time-resolved photoluminescence (PL). The effects of temperature and excitation intensity on defect-related PL have been investigated theoretically and experimentally. A phenomenological model, based on rate equations, explains the dependence of the PL intensity on excitation intensity, as well as the PL lifetime and its temperature dependence. We demonstrate that time-resolved PL measurements can be used to find the concentrations of free electrons and acceptors contributing to PL in n-type semiconductors.

Surface Diffusion Driven Morphological Instability In Free-Standing Nickel Nanorod Arrays, Ebtihaj Alrashid Jr., Dexian Ye

Physics Publications

Metallic nanostructures are thermodynamically unstable due to the excess of energy of large numbers of surface atoms. Morphological instability, such as Rayleigh breakup, sintering, and coalescence, can be observed at a temperature much lower than the bulk melting point of the metal. We study the morphological and crystalline evolution of well-aligned free-standing nickelnanorod arrays at elevated temperatures up to 600 °C. The as-deposited nickel nanorods are faceted with sharp nanotips, which are deformed at annealing temperatures higher than 400 °C due to strong surface diffusion. A mud-crack like pattern is formed in the samples annealed above 400 °C, leading to …

Lattice Thermal Conductivity In Bulk And Nanosheet Naxcoo2, Denis Demchenko, David B. Ameen

Physics Publications

In this paper we present the results of calculations of the lattice thermal conductivity of layered complex metal oxide Na_xCoO₂ within the Green–Kubo theory. Using Na_xCoO₂ we identify the two competing mechanisms responsible for the favorable scaling properties of the Green–Kubo method for calculating the lattice thermal conductivity. The artificial correlations of the heat flux fluctuations due to the finite size of the supercells are partially cancelled by the missing long wavelength acoustic phonon modes. We compute the lattice thermoelectric properties of bulk Na_xCoO₂ with varying stoichiometry, structural defects, and temperature. …

Green Luminescence In Mg-Doped Gan, Michael A. Reshchikov, Denis Demchenko, J. D. Mcnamara, S. Fernández-Garrido, R. Calarco

Physics Publications

A majority of the point defects in GaN that are responsible for broad photoluminescence (PL) bands remain unidentified. One of them is the green luminescence band (GL2) having a maximum at 2.35 eV which was observed previously in undoped GaN grown by molecular-beam epitaxy in Ga-rich conditions. The same PL band was observed in Mg-doped GaN, also grown in very Ga-rich conditions. The unique properties of the GL2 band allowed us to reliably identify it in different samples. The best candidate for the defect which causes the GL2 band is a nitrogen vacancy (VN). We propose that transitions of electrons …

Temperature Dependence Of Defect-Related Photoluminescence In Iii-V And Ii-Vi Semiconductors, Michael A. Reshchikov

Physics Publications

Mechanisms of thermal quenching of photoluminescence (PL) related to defects insemiconductors are analyzed. We conclude that the Schön-Klasens (multi-center) mechanism of the thermal quenching of PL is much more common for defects in III–V and II–VI semiconductorsas compared to the Seitz-Mott (one-center) mechanism. The temperature dependencies of PLare simulated with a phenomenological model. In its simplest version, three types of defects are included: a shallow donor, an acceptor responsible for the PL, and a nonradiative center that has the highest recombination efficiency. The case of abrupt and tunable thermal quenching ofPL is considered in more detail. This phenomenon is predicted …

Time-Resolved Photoluminescence From Defects In N-Type Gan, Michael A. Reshchikov

Physics Publications

Point defects in GaN were studied with time-resolved photoluminescence (PL). The effects of temperature and excitation intensity on defect-related PL have been investigated theoretically and experimentally. A phenomenological model, based on rate equations, explains the dependence of the PL intensity on excitation intensity, as well as the PL lifetime and its temperature dependence. We demonstrate that time-resolved PL measurements can be used to find the concentrations of free electrons and acceptors contributing to PL in n-type semiconductors.

Carbon Defects As Sources Of The Green And Yellow Luminescence Bands In Undoped Gan, Michael A. Reshchikov, Denis Demchenko, A. Usikov, H. Helava, Yu Makarov

Physics Publications

In high-purity GaN grown by hydride vapor phase epitaxy, the commonly observed yellow luminescence (YL) band gives way to a green luminescence (GL) band at high excitation intensity. We propose that the GL band with a maximum at 2.4 eV is caused by transitions of electrons from the conduction band to the 0/+ level of the isolated CN defect. The YL band, related to transitions via the −/0 level of the same defect, has a maximum at 2.1 eV and can be observed only for some high-purity samples. However, in less pure GaN samples, where no GL band is observed, …

Self-Consistent Determination Of Hubbard U For Explaining The Anomalous Magnetism Of The Gd13 Cluster, Kun Tao, Jian Zhou, Qiang Sun, Qian Wang, V. S. Stepanyuk, Puru Jena

Physics Publications

The effective on-site Coulomb interaction (Hubbard U) is an important parameter for studying strongly correlated systems. While U is determined empirically by fitting to bulk values, its value for a cluster with a finite number of atoms remains uncertain. Here, we choose Gd13 as a prototypical example of a strongly correlated cluster. Contrary to the well-known results in transition-metal clusters where magnetic moments of clusters are larger than their bulk, in Gd13 cluster the magnetic moment issmaller than its bulk value. Using density functional theory and the linear response approach, we determine U self-consistently for the cluster and apply …

Aromatic Superhalogens, Brandon Child, Santanab Giri, Scott Gronert, Puru Jena

Physics Publications

No organic molecules with electron affinities near or above those of halogens are known. We show for the first time that aromaticity rules can be used to design molecules with electron affinities far exceeding those of halogen atoms either by tailoring the ligands of cyclopentadienyl or by multiple benzo-annulations of cyclopentadienyl in conjunction with the substitution of CH groups with isoelectronic N atoms. Results based on density functional theory reveal that the electron affinities of some of these organic molecules can reach as high as 5.59 eV, thus opening the door to new class of superhalogens that contain neither a …

Tailoring Li Adsorption On Graphene, Jian Zhou, Qiang Sun, Qian Wang, Puru Jena

Physics Publications

The technological potential of functionalized graphene has recently stimulated considerable interest in the study of the adsorption of metal atoms on graphene. However, a complete understanding of the optimal adsorption pattern of metal atoms on a graphene substrate has not been easy because of atomic relaxations at the interface and the interaction between metal atoms. We present a partial particle swarm optimization technique that allows us to efficiently search for the equilibrium geometries of metal atoms adsorbed on a substrate as a function of adatom concentration. Using Li deposition on graphene as an example we show that, contrary to previous …

Life2cl N (N = 4–6) Clusters: Double-Exchange Mediated Molecular Magnets, Kalpataru Pradhan, Purusottam Jena

Physics Publications

A systematic study of LiFe2Cl n (n = 4–6) clusters, based on gradient corrected density functional theory (DFT), shows that the electron contributed by Li can transform antiferromagnetic Fe2Cl n(n = 4 and 6) clusters into ferromagnetic clusters. In Fe2Cl6 (Fe2Cl4) cluster, the Fe atoms in +3 (+2) oxidation states are aligned antiferromagnetically, consistent with the super-exchange model. The extra electron from Li atom creates a charge disproportionation in the LiFe2Cl6(LiFe2Cl4) cluster that mediates the double-exchange interaction between the Fe atoms.Antiferromagnetic to ferromagnetic transition can also be induced by hole doping as seen to be the case with Fe2Cl5 which …

Fine Structure Of The Red Luminescence Band In Undoped Gan, Michael A. Reshchikov, A. Usikov, H. Helava, Yu. Makarov

Physics Publications

Many point defects in GaN responsible for broad photoluminescence (PL) bands remain unidentified. Their presence in thick GaN layers grown by hydride vapor phase epitaxy (HVPE) detrimentally affects the material quality and may hinder the use of GaN in high-power electronic devices. One of the main PL bands in HVPE-grown GaN is the red luminescence (RL) band with a maximum at 1.8 eV. We observed the fine structure of this band with a zero-phonon line (ZPL) at 2.36 eV, which may help to identify the related defect. The shift of the ZPL with excitation intensity and the temperature-related transformation of …

Green Luminescence In Mg-Doped Gan, Michael A. Reshchikov, Denis Demchenko, J. D. Mcnamara, S. Fernández-Garrido, R. Calarco

Physics Publications

A majority of the point defects in GaN that are responsible for broad photoluminescence (PL) bands remain unidentified. One of them is the green luminescence band (GL2) having a maximum at 2.35 eV which was observed previously in undoped GaN grown by molecular-beam epitaxy in Ga-rich conditions. The same PL band was observed in Mg-doped GaN, also grown in very Ga-rich conditions. The unique properties of the GL2 band allowed us to reliably identify it in different samples. The best candidate for the defect which causes the GL2 band is a nitrogen vacancy (VN). We propose that transitions of electrons …

Electronic Structure And Magnetic Properties Of Mn And Fe Impurities Near The Gaas (110) Surface, M. R. Mahani, M. Fhokrul Islam, A. Pertsova, C. M. Canali

Physics Publications

Combining density functional theory calculations and microscopic tight-binding models, we investigate theoretically the electronic and magnetic properties of individual substitutional transition-metal impurities (Mn and Fe) positioned in the vicinity of the (110) surface of GaAs. For the case of the [Mn2+]0 plus acceptor-hole (h) complex, the results of a tight-binding model including explicitly the impurity delectrons are in good agreement with approaches that treat the spin of the impurity as an effective classical vector. For the case of Fe, where both the neutral isoelectronic [Fe3+]0 and the ionized [Fe2+]− states are relevant to address scanning tunneling microscopy (STM) …

18-Electron Rule Inspired Zintl-Like Ions Composed Of All Transition Metals, Jian Zhou, Santanab Giri, Purusottam Jena

Physics Publications

Zintl phase compounds constitute a unique class of compounds composed of metal cations and covalently bonded multiply charged cluster anions. Potential applications of these materials in solution chemistry and thermoelectric materials have given rise to renewed interest in the search for new Zintl ions. Up to now these ions have been mostly composed of group 13, 14, and 15 post-transition metal elements and no Zintl ions composed of all transition metal elements are known. Using gradient corrected density functional theory we show that the 18-electron rule can be applied to design a new class of Zintl-like ions composed of all …

First-Principles Studies On Graphene-Supported Transition Metal Clusters, Sanjubala Sahoo, Markus E. Gruner, Shiv N. Khanna, Peter Entel

Physics Publications

Theoretical studies on the structure, stability, and magnetic properties of icosahedral TM13 (TM = Fe, Co, Ni) clusters, deposited on pristine (defect free) and defective graphene sheet as well as graphene flakes, have been carried out within a gradient corrected density functional framework. The defects considered in our study include a carbon vacancy for the graphene sheet and a five-membered and a seven-membered ring structures for graphene flakes (finite graphene chunks). It is observed that the presence of defect in the substrate has a profound influence on the electronic structure and magnetic properties of graphene-transition metal complexes, thereby increasing the …

The Viability Of Aluminum Zintl Anion Moieties Within Magnesium-Aluminum Clusters, Haopeng Wang, Yeon Jae Ko, Xinxing Zhang, Gerd Gantefoer, Hansgeorg Schnoeckel, Bryan W. Eichhorn, Puru Jena, Boggavarapu Kiran, Anil K. Kandalam, Kit H. Bowen Jr.

Physics Publications

Through a synergetic combination of anion photoelectron spectroscopy and density functional theory based calculations, we have investigated the extent to which the aluminum moieties within selected magnesium-aluminum clusters are Zintl anions. Magnesium-aluminum cluster anions were generated in a pulsed arc discharge source. After mass selection, photoelectron spectra of Mg m Al n ⁻ (m, n = 1,6; 2,5; 2,12; and 3,11) were measured by a magnetic bottle, electron energy analyzer. Calculations on these four stoichiometries provided geometric structures and full charge analyses for the cluster anions and their neutral cluster counterparts, as well as photodetachment transition energies (stick spectra). Calculations …