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Full-Text Articles in Physics
High-Power Laser Cooling And Temperature-Dependent Fluorescence Studies Of Ytterbium Doped Silica, Brian Topper
High-Power Laser Cooling And Temperature-Dependent Fluorescence Studies Of Ytterbium Doped Silica, Brian Topper
Optical Science and Engineering ETDs
Experimental observation of optical refrigeration using ytterbium doped silica glass in recent years has created a new solution for heat mitigation in high-power laser systems, nonlinear fiber experiments, integrated photonics, and precision metrology. Current efforts of different groups focus on compositional optimization, fiber fabrication, and investigating how much silica can be cooled with a laser. At the start of this work, the best effort in laser cooling ytterbium doped silica saw cooling by 6 K from room temperature. This dissertation follows the experimental efforts that culminated in the increase of this initial record by one order of magnitude. Comprehensive spectroscopic …
Ultrafast Laser-Induced Damage And The Influence Of Spectral Effects, Jeremy Gulley
Ultrafast Laser-Induced Damage And The Influence Of Spectral Effects, Jeremy Gulley
Jeremy R. Gulley
Numerous studies have investigated the prerequisite role of photoionization in ultrafast laser-induced damage (LID) of bulk dielectrics. This study examines the role of spectral width and instantaneous laser frequency in LID using a frequency dependent multiphoton ionization (MPI) model and numerical simulation of initially 800 nm laser pulses propagating through fused silica. Assuming a band gap of 9 eV, MPI by an 800 nm field is a six-photon process, but when the instantaneous wavelength is greater than 827 nm an additional photon is required for photoionization, reducing the probability of the event by many orders of magnitude. Simulation results suggest …
Modeling Free-Carrier Absorption And Avalanching By Ultrashort Laser Pulses, Jeremy Gulley
Modeling Free-Carrier Absorption And Avalanching By Ultrashort Laser Pulses, Jeremy Gulley
Jeremy R. Gulley
In the past decade it was demonstrated experimentally that negatively-chirped laser pulses can lower the surface LIDT for wide band-gap materials by decreasing the number of photons required for photoionization on the leading edge of the pulse. Similarly, simulations have shown that positively-chirped pulses resulting from selffocusing and self-phase modulation in bulk dielectrics can alter the onset of laser-induced material modifications by increasing the number of photons required for photoionization on the leading edge of the pulse. However, the role of multi-chromatic effects in free-carrier absorption and avalanching has yet to be addressed. In this work a frequency-selective model of …
Frequency Dependence In The Initiation Of Laser-Induced Damage, Jeremy Gulley
Frequency Dependence In The Initiation Of Laser-Induced Damage, Jeremy Gulley
Jeremy R. Gulley
Numerous studies have investigated the role of photoionization in ultrafast laser-induced damage of bulk dielectrics. This study examines the role of spectral width and instantaneous laser frequency in laser-induced damage using a frequency dependent multiphoton ionization model and numerical simulation of an 800 nm laser pulse propagating through fused silica. When the individual photon wavelengths are greater than 827 nm, an additional photon is required for photoionization, reducing the probability of the event by many orders of magnitude. Simulation results suggest that this frequency dependence may significantly affect the processes of laser-induced damage and filamentation.
Silicon-Sensitized Erbium Excitation In Silicon-Rich Silica For Integrated Photonics, Oleksandr Savchyn
Silicon-Sensitized Erbium Excitation In Silicon-Rich Silica For Integrated Photonics, Oleksandr Savchyn
Electronic Theses and Dissertations
It is widely accepted that the continued increase of processor performance requires at least partial replacement of electronic interconnects with their photonic counterparts. The implementation of optical interconnects requires the realization of a silicon-based light source, which is challenging task due to the low emission efficiency of silicon. One of the main approaches to address this challenge is the use of doping of silicon based matrices with optical centers, including erbium ions. Erbium ions incorporated in various hosts assume the trivalent state (Er3+) and demonstrate a transition at 1.54 μm, coinciding with optical transmission windows in both silicon and silica. …
Simulation And Analysis Of Ultrafast Laser Pulse Induced Plasma Generation In Dielectric Materials, Jeremy Gulley, Sebastian Winkler, William Dennis
Simulation And Analysis Of Ultrafast Laser Pulse Induced Plasma Generation In Dielectric Materials, Jeremy Gulley, Sebastian Winkler, William Dennis
Jeremy R. Gulley
Recent experiments on optical damage by ultrashort laser pulses have demonstrated that the temporal pulseshape can dramatically influence plasma generation in fused silica and sapphire. In this work a modified 3+1D nonlinear Schroedinger equation for the pulse propagation coupled to a rate equation for the plasma density in the dielectric material is used to simulate pulse propagation and plasma formation in a range of dielectric materials. We use these simulations to analyze the influence of pulse-width, pulse-shape and beam geometry on the formation of the electron plasma and hence damage in the bulk material. In particular, when possible, we simulate …
Effect Of Germanium Doping On Erbium Sensitization In The Erbium Doped Silicon Rich Silica Material System, Forrest Ruhge
Effect Of Germanium Doping On Erbium Sensitization In The Erbium Doped Silicon Rich Silica Material System, Forrest Ruhge
Electronic Theses and Dissertations
The continued size reduction in electronic integrated circuits has lead to a demand for on-chip high-bandwidth and low loss communication channels. Optical interconnects are considered an essential addition to the silicon electronics platform. A major challenge in the field of integrated Si photonics is the development of cost effective silicon compatible light sources. This thesis investigates the sensitization of group IV doped silica films emitting at 1.535μm for applications as silicon compatible light sources. Thin erbium-doped silica films containing excess silicon and germanium were deposited using a multi-gun sputter system. The composition of the deposited materials was verified by Rutherford …
Ionic Polishing Of Fused Silica And Glass, Raymond Wilson
Ionic Polishing Of Fused Silica And Glass, Raymond Wilson
Raymond Wilson