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Full-Text Articles in Physics
Silicon-Sensitized Erbium Excitation In Silicon-Rich Silica For Integrated Photonics, Oleksandr Savchyn
Silicon-Sensitized Erbium Excitation In Silicon-Rich Silica For Integrated Photonics, Oleksandr Savchyn
Electronic Theses and Dissertations
It is widely accepted that the continued increase of processor performance requires at least partial replacement of electronic interconnects with their photonic counterparts. The implementation of optical interconnects requires the realization of a silicon-based light source, which is challenging task due to the low emission efficiency of silicon. One of the main approaches to address this challenge is the use of doping of silicon based matrices with optical centers, including erbium ions. Erbium ions incorporated in various hosts assume the trivalent state (Er3+) and demonstrate a transition at 1.54 μm, coinciding with optical transmission windows in both silicon and silica. …
Effect Of Germanium Doping On Erbium Sensitization In The Erbium Doped Silicon Rich Silica Material System, Forrest Ruhge
Effect Of Germanium Doping On Erbium Sensitization In The Erbium Doped Silicon Rich Silica Material System, Forrest Ruhge
Electronic Theses and Dissertations
The continued size reduction in electronic integrated circuits has lead to a demand for on-chip high-bandwidth and low loss communication channels. Optical interconnects are considered an essential addition to the silicon electronics platform. A major challenge in the field of integrated Si photonics is the development of cost effective silicon compatible light sources. This thesis investigates the sensitization of group IV doped silica films emitting at 1.535μm for applications as silicon compatible light sources. Thin erbium-doped silica films containing excess silicon and germanium were deposited using a multi-gun sputter system. The composition of the deposited materials was verified by Rutherford …