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Articles 61 - 66 of 66
Full-Text Articles in Physics
High-Throughput Screening Of Shape Memory Alloy Thin-Film Spreads Using Nanoindentation, Arpit Dwivedi, Thomas Wyrobek, Oden Warren, Jason Hattrick-Simpers, Olubenga Famodu, Ichiro Takeuchi
High-Throughput Screening Of Shape Memory Alloy Thin-Film Spreads Using Nanoindentation, Arpit Dwivedi, Thomas Wyrobek, Oden Warren, Jason Hattrick-Simpers, Olubenga Famodu, Ichiro Takeuchi
Jason R. Hattrick-Simpers
We have demonstrated the utility of nanoindentation as a rapid characterization tool for mapping shape memoryalloy compositions in combinatorial thin-film libraries. Nanoindentation was performed on Ni–Mn–Al ternary composition spreads. The indentation hardness and the reduced elastic modulus were mapped across a large fraction of the ternary phase diagram. The large shape memoryalloy composition region, located around the Heusler composition (Ni2MnAl), was found to display significant departure in these mechanical properties from the rest of the composition spread. In particular, the modulus and the hardness values are lower for the martensite region than those of the rest of the phase diagram.
Characterization Of Magnetic Degradation Mechanism In A High Neutron-Flux Environment, Adib Samin, Jie Qiu, Jason Hattrick-Simpers, Liyang Dai-Hattrick, Yuan Zheng, Lei Cao
Characterization Of Magnetic Degradation Mechanism In A High Neutron-Flux Environment, Adib Samin, Jie Qiu, Jason Hattrick-Simpers, Liyang Dai-Hattrick, Yuan Zheng, Lei Cao
Jason R. Hattrick-Simpers
No abstract provided.
High-Resolution Image Reconstruction From Digital Video By Exploitation Of Nonglobal Motion, Timothy Tuinstra, Russell Hardie
High-Resolution Image Reconstruction From Digital Video By Exploitation Of Nonglobal Motion, Timothy Tuinstra, Russell Hardie
Russell C. Hardie
Many imaging systems utilize detector arrays that do not sample the scene according to the Nyquist criterion. As a result, the higher spatial frequencies admitted by the optics are aliased. This creates undesirable artifacts in the imagery. Furthermore, the blurring effects of the optics and the finite detector size also degrade the image quality. Several approaches for increasing the sampling rate of imaging systems have been suggested in the literature. We propose an algorithm for resolution enhancement that exploits object motion in digital video sequences. Unlike previously defined techniques, we use an automated segmentation method to isolate rigid moving objects. …
Adaptive Circuits Using Pfet Floating-Gate Devices, Paul Hasler, Bradley Minch, Chris Diorio
Adaptive Circuits Using Pfet Floating-Gate Devices, Paul Hasler, Bradley Minch, Chris Diorio
Bradley Minch
In this paper, we describe our floating-gate pFET device, with its many circuit applications and supporting experimental measurements. We developed these devices in standard double-poly CMOS technologies by utilizing many effects inherent in these processes. We add floating-gate charge by electron tunneling, and we remove floating-gate charge by hot-electron injection. With this floating-gate technology, we cannot only build analog EEPROMs, we can also implement adaptation and learning when we consider floating-gate devices to be circuit elements with important time-domain dynamics. We start by discussing non-adaptive properties of floating-gate devices and we present two representative non-adaptive applications. First, we discuss using …
A Long-Channel Model For The Asymmetric Double-Gate Mosfet Valid In All Regions Of Operation, Abhishek Kammula, Bradley Minch
A Long-Channel Model For The Asymmetric Double-Gate Mosfet Valid In All Regions Of Operation, Abhishek Kammula, Bradley Minch
Bradley Minch
We present a physically based, continuous analytical model for long-channel double-gate MOSFETs. The model is particularly well suited for implementation in circuit simulators due to the simple expressions for the current andthe continuous nature of the derivatives of the current which improves convergence behavior.
Analysis Of Electroluminescence Spectra Of Silicon And Gallium Arsenide P-N Junctions In Avalanche Breakdown, M Lahbabi, A Ahaitoufa, M. Fliyou, E. Abarkan, J.-P. Charles, A. Bath, A. Hoffmann, Sherra Kerns, David Kerns, Jr.
Analysis Of Electroluminescence Spectra Of Silicon And Gallium Arsenide P-N Junctions In Avalanche Breakdown, M Lahbabi, A Ahaitoufa, M. Fliyou, E. Abarkan, J.-P. Charles, A. Bath, A. Hoffmann, Sherra Kerns, David Kerns, Jr.
David V. Kerns
We present a generalized study of light emission from reverse biased p–n junctions under avalanche breakdown conditions. A model is developed based on direct and indirect interband processes including self-absorption to describe measured electroluminescence spectra. This model was used to analyze experimental data for silicon (Si) and gallium arsenide p–n junctions and can be extended to several types of semiconductors regardless of their band gaps. This model can be used as a noninvasive technique for the determination of the junction depth. It has also been used to explain the observed changes of the Si p–n junction electroluminescence spectra after fast …