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Physics Faculty Publications

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Articles 2071 - 2100 of 2177

Full-Text Articles in Physical Sciences and Mathematics

Numerical Methods In Optics: A Course About Learning Physics Through Computing, James A. Lock Dec 1987

Numerical Methods In Optics: A Course About Learning Physics Through Computing, James A. Lock

Physics Faculty Publications

Many advanced undergraduates find it difficult to connect abstract mathematical formalisms with the concrete physical phenomena that they describe. A course in optics from a numerical methods point of view is described. Its purpose is to exploit the students’ familiarity with computng in order to more effectively learn the physics involved in a number of realistic phenomena. The combination of demonstrations, computer calculations, and computer graphics display of the results can prove to be a useful tool in developing physical intuition in students.

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Defect Production In Electron-Irradiated, N-Type Gaas, David C. Look, J. R. Sizelove Nov 1987

Defect Production In Electron-Irradiated, N-Type Gaas, David C. Look, J. R. Sizelove

Physics Faculty Publications

Temperature-dependent Hall-effect measurements have been performed on pure, n-type, vapor-phase epitaxial GaAs, irradiated by 1-MeV electrons at room temperature. The energies and production rates of two dominant defect centers, C2 and C3, are as follows: E2 = EC - 0.148, E3 = EC2 = 2.0 and τ3 = 0.5 +/1 0.2 cm-1, in good agreement with deep level transient spectroscopy (DLTS) data. However, the most important result of this study is a very high production rate, τAS ≅ +/- 1 cm-1, for "shallow" acceptors (C …

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Equivalence Of Donor And Acceptor Fits To Temperature-Dependent Hall Data: General Case, David C. Look Nov 1987

Equivalence Of Donor And Acceptor Fits To Temperature-Dependent Hall Data: General Case, David C. Look

Physics Faculty Publications

Recently, it was shown that the usual statistical-mechanical formulation used to fit carrier concentration versus temperature data cannot distinguish between the donor or acceptor nature of one single-charge-state center. Here we generalize that result to include any number of donor and acceptor centers, of arbitrary charge multiplicity, and also show how that by fitting one particular case (e.g., every center assumed to be a donor), all of the other possible cases can be immediately solved by inspection.

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Photoresistivity And Photo-Hall-Effect Topography On Semi-Insulating Gaas Wafers, David C. Look, E. Pimentel Nov 1987

Photoresistivity And Photo-Hall-Effect Topography On Semi-Insulating Gaas Wafers, David C. Look, E. Pimentel

Physics Faculty Publications

By placing a semi-insulating GaAs wafer on a fiat, rare-earth magnet, and irradiating the surface with two perpendicular slits of light to form a Greek cross configuration, it is possible to perform photoresistivity and photo-Hall-effect topography on the wafer. The technique is nondestructive in that the contacts are tiny, removable In dots which are placed only on the periphery. By varying the wavelength of the light, selective centers, such as EL2, can be mapped. We compare a 1.1-μ, photoexcited electron concentration map with a quantitative EL2 map on a 3-in. undoped, liquid-encapsulated Czochralski wafer.

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Photoluminescence In Electrically Reversible (Semiconducting To Semiinsulating) Bulk Gaas, Phil W. Yu, David C. Look, W. Ford Oct 1987

Photoluminescence In Electrically Reversible (Semiconducting To Semiinsulating) Bulk Gaas, Phil W. Yu, David C. Look, W. Ford

Physics Faculty Publications

A photoluminescence study has been made of electrically reversible, bulk, liquid-encapsulated Czochralski GaAs at temperatures 2-300 K. The reversibility from the semiconducting to the semi-insulating state is made by slow or fast cooling, respectively, following a 5-h, 950°C heat treatment in an evacuated quartz ampoule. A donor level at Ec - 0.13 eV and two acceptor levels at Ev + 0.069 eV and Ev + 0.174 eV are produced after the heat treatment. Only the acceptor levels were detected by photoluminescence. A tentative model assigning the acceptor to the intrinsic defect pair VGa-GaAs is discussed.

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Square-Lattice Ising Model In A Weak Uniform Magnetic Field: Renormalization Group Analysis, Miron Kaufman Sep 1987

Square-Lattice Ising Model In A Weak Uniform Magnetic Field: Renormalization Group Analysis, Miron Kaufman

Physics Faculty Publications

For the two-dimensional ferromagnetic Ising critical point, I show that the known values of the critical exponents imply the absence of logarithms of the reduced temperature in the leading contributions to any field derivative of the free energy at zero magnetic field. For the square-lattice Ising antiferromagnet in a weak magnetic field, I compute the critical line Tc(H)=Tc0(1-0.038 023 259H2) and the leading contribution to the susceptibility χ=0.014 718 006 6H2ln(1/ǁtǁ), where t is the reduced temperature.

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High Acceptor Production Rate In Electron-Irradiated N-Type Gaas - Impact On Defect Models, David C. Look Sep 1987

High Acceptor Production Rate In Electron-Irradiated N-Type Gaas - Impact On Defect Models, David C. Look

Physics Faculty Publications

Defect production rates have been studied in electron-irradiated GaAs by temperature-dependent Hall-effect (TDR) measurements. The TDH results agree well with deep level transient spectroscopy (DLTS) results for the wen-known electron traps E1, E2, and E3, but conclusively demonstrate a much higher production rate (4 ± 1 cm-1) of acceptors below E3 than the total of all other DLTS traps. These findings strongly affect current defect models, and, e.g., are consistent with the existence of Ga sublattice damage, not seen before.

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Fresnel Diffraction Effects In Misfocused Vision, James A. Lock Mar 1987

Fresnel Diffraction Effects In Misfocused Vision, James A. Lock

Physics Faculty Publications

If a narrow line stimulus on an opposite contrast background is observed with appropriately misfocused vision, the stimulus appears as a number of alternating bright and dark fringes. A numerical calculation of this effect was performed. As a result it was found that the banding phenomenon is a Fresnel diffraction effect depending on the details of both the narrow line stimulus and the eye pupil.

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Multicritical Susceptibility Sum Rules, Miron Kaufman, Michael Ma Mar 1987

Multicritical Susceptibility Sum Rules, Miron Kaufman, Michael Ma

Physics Faculty Publications

Asymptotically close to the Nth-order multicritical point of an N-phase system, there are N-1 sum rules involving the mean-field susceptibilities measured in each of the coexisting phases. These sum rules provide the experimentalist a convenient and stringent test of the theory. In particular, they facilitate the detection of nonclassical effects, especially valuable for N>3 where the fluctuation effect is dominated by the classical contribution for three-dimensional systems.

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Comparison Of Low-Energy Seismic Sources In Till, Paul J. Wolfe, B. H. Richard, Dale V. Dailey, James R. Plomer Mar 1987

Comparison Of Low-Energy Seismic Sources In Till, Paul J. Wolfe, B. H. Richard, Dale V. Dailey, James R. Plomer

Physics Faculty Publications

No abstract provided.

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Equivalence Of Donor And Acceptor Fits Of Temperature-Dependent Carrier-Concentration Data, David C. Look, J. R. Sizelove Feb 1987

Equivalence Of Donor And Acceptor Fits Of Temperature-Dependent Carrier-Concentration Data, David C. Look, J. R. Sizelove

Physics Faculty Publications

It is shown that the usual charge-balance analysis of temperature-dependent carrier-concentration data cannot distinguish between the donor and acceptor behavior of a center which is emitting carriers to a particular band, even though the statistics are different in the two cases. Other data, such as mobility or analytical results are needed to make the distinction.

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Electrical Characterization Of Ion Implantation Into Gaas, David C. Look Jan 1987

Electrical Characterization Of Ion Implantation Into Gaas, David C. Look

Physics Faculty Publications

Recent advances in the characterization of ion‐implanted samples have included whole wafer mapping (topography) and depth profiling techniques. We review several methods for mapping electrical parameters, including the dark‐spot resistance (DSR), and the microwave photoconductance techniques. In addition, we suggest a new photo‐Hall technique which would allow mobility and carrier‐concentration mapping as well as that of resistivity . Finally, we review methods for obtaining ρ, μ, and depth profiles, with particular emphasis on the application of the magnetoresistance techniques in actual field‐effect transistor structures.

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Multicritical Points In An Ising Random-Field Model, Miron Kaufman, Philip E. Klunzinger, A. Khurana Oct 1986

Multicritical Points In An Ising Random-Field Model, Miron Kaufman, Philip E. Klunzinger, A. Khurana

Physics Faculty Publications

The phase diagram of the mean-field Ising model in a random field obeying a symmetric three-peak distribution is determined. This distribution is relevant to diluted antiferromagnets in a uniform magnetic field. The phase diagram includes a fourth-order point, tricritical points, ordered critical points, critical end points, and a double critical end point. An ordered phase persists for arbitrarily large random fields at low temperatures.

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Semiconducting/Semi-Insulating Reversibility In Bulk Gaas, David C. Look, Phil W. Yu, W. M. Theis, W. Ford, G. Mathur, J. R. Sizelove, D. H. Lee, S. S. Li Oct 1986

Semiconducting/Semi-Insulating Reversibility In Bulk Gaas, David C. Look, Phil W. Yu, W. M. Theis, W. Ford, G. Mathur, J. R. Sizelove, D. H. Lee, S. S. Li

Physics Faculty Publications

Bulk, liquid-encapsulated Czochralski GaAs may be reversibly changed from semiconducting (ρ~1 Ω cm) to semi-insulating (ρ~107 Ω cm) by slow or fast cooling, respectively, following a 5 h, 950°C soak in an evacuated quartz ampoule. This effect has been studied by temperature-dependent Han-effect, photoluminescence, infrared absorption, mass spectroscopy, and deep level transient spectroscopy measurements. Except for boron, the samples are very pure, with carbon and silicon concentrations less than 3 X 1014 cm-3. Donor and acceptor concentrations, on the other hand, are in the mid 1015 cm-3 range, which means …

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Semiconducting/Semi-Insulating Reversibility In Bulk Gaas, David C. Look, Phil W. Yu, W. M. Theis, W. Ford, G. Mathur, J. R. Sizelove, D. H. Lee, S. S. Li Oct 1986

Semiconducting/Semi-Insulating Reversibility In Bulk Gaas, David C. Look, Phil W. Yu, W. M. Theis, W. Ford, G. Mathur, J. R. Sizelove, D. H. Lee, S. S. Li

Physics Faculty Publications

Bulk, liquid‐encapsulated Czochralski GaAs may be reversibly changed from semiconducting (ρ∼1 Ω cm) to semi‐insulating (ρ∼107 Ω cm) by slow or fast cooling, respectively, following a 5 h, 950 °C soak in an evacuated quartz ampoule. This effect has been studied by temperature‐dependent Hall‐effect, photoluminescence, infrared absorption, mass spectroscopy, and deep level transient spectroscopy measurements. Except for boron, the samples are very pure, with carbon and silicon concentrations less than 3×1014 cm−3. Donor and acceptor concentrations, on the other hand, are in the mid 1015 cm−3 range, which means that …

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Origin Of Nonuniversality In Micellar Solutions: Comment, R. G. Caflisch, Miron Kaufman, J. R. Banavar Jun 1986

Origin Of Nonuniversality In Micellar Solutions: Comment, R. G. Caflisch, Miron Kaufman, J. R. Banavar

Physics Faculty Publications

No abstract provided.

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Mössbauer Spectroscopic Studies Of Hemoglobin And Its Isolated Subunits, G. R. Hoy, D. C. Cook, R. L. Berger, F. K. Friedman May 1986

Mössbauer Spectroscopic Studies Of Hemoglobin And Its Isolated Subunits, G. R. Hoy, D. C. Cook, R. L. Berger, F. K. Friedman

Physics Faculty Publications

Samples of 90% enriched 57Fe hemoglobin and its isolated subunits have been prepared. Mössbauer spectroscopic measurements have been made on three such samples. Sample one contained contributions of oxyhemoglobin, deoxyhemoglobin, and carbonmonoxyhemoglobin. This sample was studied from a temperature of 90 K down to 230 mK. Measurements were also made at 4.2 K using a small applied magnetic field of 1.0 T. In general, the measured quadrupole splittings and isomer shifts for each component agreed with previous measurements on single component samples in the literature, and thus demonstrated that chemically enriched hemoglobin has not been altered. The second and …

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A Priori Predictions Of Phase Transitions In Kcaf3 And Rbcaf3: Existence Of A New Ground State, John W. Flocken, R. A. Guenther, John R. Hardy, L. L. Boyer Apr 1986

A Priori Predictions Of Phase Transitions In Kcaf3 And Rbcaf3: Existence Of A New Ground State, John W. Flocken, R. A. Guenther, John R. Hardy, L. L. Boyer

Physics Faculty Publications

We have made an a prior; theoretical study of the potential-energy surfaces for KCaF3 and RbCaF3, and have examined the relative stability of the various lower-symmetry structures generated from the cubic perovskite phase by "rotations" of the CaF6 octahedra. A completely new ground state was discovered which, when included in the sequence of energy levels, allows us to give a full account both qualitatively and, in the case of RbCaF3, quantitatively of the phase transition sequences in both systems.

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Summary Abstract - Theoretical And Experimental Capacitance-Voltage Behavior Of Modulation-Doped Al(0.3)Ga(0.7)As/Gaas Heterojunctions, George B. Norris, David C. Look, W. Koop, J. Klem, H. Morkoç Mar 1986

Summary Abstract - Theoretical And Experimental Capacitance-Voltage Behavior Of Modulation-Doped Al(0.3)Ga(0.7)As/Gaas Heterojunctions, George B. Norris, David C. Look, W. Koop, J. Klem, H. Morkoç

Physics Faculty Publications

No abstract provided.

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Ar+ In The Terrestrial Ionosphere, Jane L. Fox Jan 1986

Ar+ In The Terrestrial Ionosphere, Jane L. Fox

Physics Faculty Publications

The Ar+ densities in the terrestrial ionosphere are computed for both low and high solar activity models. The reaction N2+(υ > 0) + Ar → N2+ Ar+ is found to be a significant source of Ar+, nearly equal to photoionization and electron impact ionization in the high solar activity model. Peak densities of Ar+ of 11 cm−3 near 190 km and 22 cm−3 near 220 km are predicted for the low and high solar activity models. It is suggested that a simultaneous measurement of Ar+ and Ar densities …

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The Temporary Capture Of Light By A Dielectric Film, James A. Lock Oct 1985

The Temporary Capture Of Light By A Dielectric Film, James A. Lock

Physics Faculty Publications

When a wave packet of light passes through a dielectric film it is found that at a transmission maximum, the group velocity of the light wave packet within the film attains its minimum value. Similarly, at a transmission minimum, it is found that the group velocity of the light wave packet within the film attains its maximum value. The measurability of this effect is also discussed.

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Magnetoresistance Method To Determine Gaas And Alxga1-Xas Mobilities In Alxga1-Xas/Gaas Modulation-Doped Field-Effect Transistor Structures, David C. Look, George B. Norris, W. Kopp, T. Henderson, H. Morkoç Aug 1985

Magnetoresistance Method To Determine Gaas And Alxga1-Xas Mobilities In Alxga1-Xas/Gaas Modulation-Doped Field-Effect Transistor Structures, David C. Look, George B. Norris, W. Kopp, T. Henderson, H. Morkoç

Physics Faculty Publications

Charge carrier mobilities are conveniently measured in simple, homostructure field-effect transistors (FET's) by means of the geometric magnetoresistance (GMR) technique. Heterostructure FET's, however, are more complicated because of multiple conducting regions, as well as multiple conducting bands within a given region. We apply a multilayer GMR mobility model to a frequently used heterostructure FET design, namely, the Al0.3Ga0.7As conduction band. In the particular MODFET structure studied here, the lowest GaAs subband mobility ranges from 5.7X103 cm2/Vs at threshold to 6.9X103 cm2/Vs at saturation while Al0.3Ga0.7As mobility …

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Theoretical And Experimental Capacitance-Voltage Behavior Of Al0.3ga0.7as Gaas Modulation-Doped Heterojunctions - Relation Of Conduction-Band Discontinuity To Donor Energy, George B. Norris, David C. Look, W. Kopp, J. Klem, H. Morkoç Aug 1985

Theoretical And Experimental Capacitance-Voltage Behavior Of Al0.3ga0.7as Gaas Modulation-Doped Heterojunctions - Relation Of Conduction-Band Discontinuity To Donor Energy, George B. Norris, David C. Look, W. Kopp, J. Klem, H. Morkoç

Physics Faculty Publications

For the first time, we show that the capacitance-voltage behavior of modulation-doped heterojunctions may be accurately described by a first-principles theory that includes selfconsistent quantum two-dimensional (2-D) electron subbands in the GaAs, numerical solution of Poisson's equation for band bending and space charge in the (Al,Ga) As, and series resistance in the 2-D channel and heterointerface. The excellent agreement found between the theory and measurements on selected high-quality Al0.3Ga0.7 As/GaAs heterojunctions allows accurate determination of the maximum 2-D carrier concentration. From this, we find a strong relationship between the conduction-band discontinuity and donor binding energy, giving offsets. …

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Incident Beam Polarization For Laser Doppler Velocimetry Employing A Sapphire Cylindrical Window, James A. Lock, Harold J. Schock Jul 1985

Incident Beam Polarization For Laser Doppler Velocimetry Employing A Sapphire Cylindrical Window, James A. Lock, Harold J. Schock

Physics Faculty Publications

For laser Doppler velocimetry studies employing sapphire windows as optical access ports, the birefringency of sapphire produces an extra beam intersection volume which serves to effectively smear the acquired velocity flow field data. It is shown that for a cylindrical window geometry, the extra beam intersection volume may be eliminated with minimal decrease in the fringe visibility of the remaining intersection volume by suitably orienting the polarizations of the initial laser beams. For horizontally incident beams, these polarizations were measured at three intersection locations within the cylinder. It was found that the measured polarization angles agreed with the theoretical predictions.

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First-Principles Study Of Structural Instabilities In Halide-Based Perovskites: Competition Between Ferroelectricity And Ferroelasticity, John W. Flocken, R. A. Guenther, John R. Hardy, L. L. Boyer Jun 1985

First-Principles Study Of Structural Instabilities In Halide-Based Perovskites: Competition Between Ferroelectricity And Ferroelasticity, John W. Flocken, R. A. Guenther, John R. Hardy, L. L. Boyer

Physics Faculty Publications

We have made a systematic theoretical survey of the competition between ferroelastic and ferroelectric instabilities in the family of halide-based perovskites of formula ABX3, where A is an alkali-metal ion, B is a Be, Mg, or Ca ion, and X is a halide ion. Initially we surveyed the whole series of such compounds, making a theoretical lattice-dynamical study using first-principles interionic potentials composed of a long-range pure Coulomb interaction between the spherically symmetric free ions, and a short-range component calculated by the Gordon-Kim approach from the overlapping free-ion charge densities. We then proceeded to examine in more detail three compounds, …

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Beyond The Rigid-Ion Approximation With Spherically Symmetric Ions, L. L. Boyer, M. J. Mehl, J. L. Feldman, John R. Hardy, C. Y. Fong Apr 1985

Beyond The Rigid-Ion Approximation With Spherically Symmetric Ions, L. L. Boyer, M. J. Mehl, J. L. Feldman, John R. Hardy, C. Y. Fong

Physics Faculty Publications

Ab initio calculations show that a spherically symmetric charge relaxation of ions in a crystal, in response to the long-range electrostatic potential, is important for understanding the splitting between longitudinal- and transverse-optic-mode frequencies, and the violation of the Cauchy relations among elastic constants.

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Summary Abstract: Capacitance-Voltage Characteristics In Modulation Doped Heterojunction Fets, George B. Norris, David C. Look, W. Koop, J. Klem, H. Morkoç Mar 1985

Summary Abstract: Capacitance-Voltage Characteristics In Modulation Doped Heterojunction Fets, George B. Norris, David C. Look, W. Koop, J. Klem, H. Morkoç

Physics Faculty Publications

No abstract provided.

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Schottky-Barrier Profiling Techniques In Semiconductors - Gate Current And Parasitic Resistance Effects, David C. Look Jan 1985

Schottky-Barrier Profiling Techniques In Semiconductors - Gate Current And Parasitic Resistance Effects, David C. Look

Physics Faculty Publications

The theory for obtaining mobility and carrier concentration profiles by the Hall-effect, magnetoresistance, and capacitance-conductance methods is developed in the relaxation-time approximation. This theory is then applied to semiconductors in which a Schottky barrier is used to control a depletion region. Particular emphasis is given to field-effect transistor structures which are ideally suited for geometric magnetoresistance measurements. A unique feature of the present model is the correction for finite gate (Schottky-barrier) current, which can be very important under forward-gate-bias conditions. The ability to use forward-bias makes the near-surface region more accessible. Also, parasitic resistance effects are treated. We apply these …

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The Rotated Diffraction Grating: A Laboratory Experiment, James A. Lock Jan 1985

The Rotated Diffraction Grating: A Laboratory Experiment, James A. Lock

Physics Faculty Publications

No abstract provided.

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The Vibrational Distribution Of N2+ In The Terrestrial Ionosphere, Jane L. Fox, Alexander Dalgarno Jan 1985

The Vibrational Distribution Of N2+ In The Terrestrial Ionosphere, Jane L. Fox, Alexander Dalgarno

Physics Faculty Publications

The densities and vibrational distributions of N2+ in the X²Σg+, A²Πu, and B²Σu+ states in the daytime terrestrial ionosphere are computed for both low and high solar activity. Altitude profiles of the relative populations of the vibrational levels of N2+X²Σg+ are presented. The fraction of vibrationally excited N2+ varies from 5% at 100 km to 50% at 450 km. Several models are examined in which loss of N2+(v) is enhanced for v > 0 and in …

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