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Articles 3601 - 3630 of 3814

Full-Text Articles in Physical Sciences and Mathematics

Prominent Thermally Stimulated Current Trap In Low-Temperature-Grown Molecular-Beam Epitaxial Gaas, Z-Q. Fang, David C. Look Jul 1993

Prominent Thermally Stimulated Current Trap In Low-Temperature-Grown Molecular-Beam Epitaxial Gaas, Z-Q. Fang, David C. Look

Physics Faculty Publications

By far, the largest thermally stimulated current trap in molecular beam epitaxial GaAs grown at 200–250 °C is T5, with an activation energy of 0.27 eV and most likely related to VGa. After an anneal at 300–350 °C, another trap T6☒ appears, with an activation energy of 0.14 eV and closely identified with VAs or the complex, VAs‐AsGa. Proposed defect reactions in this As‐rich material include VGa+AsAs→VAs‐AsGa, and VGa+AsGa→VGa‐AsGa.

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Annealing Dynamics Of Molecular-Beam Epitaxial Gaas Grown At 200°C, David C. Look, D. C. Walters, G. D. Robinson, J. R. Sizelove, M. G. Mier, C. E. Stutz Jul 1993

Annealing Dynamics Of Molecular-Beam Epitaxial Gaas Grown At 200°C, David C. Look, D. C. Walters, G. D. Robinson, J. R. Sizelove, M. G. Mier, C. E. Stutz

Physics Faculty Publications

By separating a 2‐μm‐thick molecular‐beam‐epitaxial GaAs layer grown at 200 °C from its 650‐μm‐thick substrate, we have been able to obtain accurate Hall‐effect and conductivity data as functions of annealing temperature from 300 to 600 °C. At a measurement temperature of 300 K, analysis confirms that hopping conduction is much stronger than band conduction for all annealing temperatures. However, at higher measurement temperatures (up to 500 K), the band conduction becomes comparable, and a detailed analysis yields the donor and acceptor concentrations and the donor activation energy. Also, an independent absorption study yields the total and charged AsGa concentrations. …

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Analytical Two-Layer Hall Analysis - Application To Modulation-Doped Field-Effect Transistors, David C. Look, C. E. Stutz, Christopher A. Bozada Jul 1993

Analytical Two-Layer Hall Analysis - Application To Modulation-Doped Field-Effect Transistors, David C. Look, C. E. Stutz, Christopher A. Bozada

Physics Faculty Publications

The classical magnetic‐field‐dependent Hall coefficient and conductivity equations are inverted to give the mobilities μ1 and μ2 and carrier concentrations n1 (or p1) and n2 (or p2) in two degenerate bands. The two‐band solution holds for arbitrary magnetic‐field strength as long as quantum effects can be ignored (i.e., kT≳ℏeB/m∗), and it is argued that the analysis can also be applied to two separate layers up to reasonable field strengths. The results are used to determine the two‐dimensional electron gas mobility and carrier concentration in a modulation‐doped field‐effect …

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A Framework For Controlling Cooperative Agents, Kuo-Chu Lee, William H. Mansfield, Amit P. Sheth Jul 1993

A Framework For Controlling Cooperative Agents, Kuo-Chu Lee, William H. Mansfield, Amit P. Sheth

Kno.e.sis Publications

Presents an overview of the ITX (Interacting Transaction) system, which supports complex interactions among cooperating agents in the presence of user interventions that change application objectives and system failures. The system's components and its unique fixed-point criterion for feedback control of iterative interactions are described. An example of a simplified multimedia teleconferencing application is discussed to illustrate the features of the ITX system.

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Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 9, Number 6, June 1993, College Of Engineering And Computer Science, Wright State University Jun 1993

Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 9, Number 6, June 1993, College Of Engineering And Computer Science, Wright State University

BITs and PCs Newsletter

A ten page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.

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Donor And Acceptor Concentrations In Molecular-Beam Epitaxial Gaas Grown At 300-Degrees-C And 400-Degrees-C, David C. Look, G. D. Robinson, J. R. Sizelove, C. E. Stutz Jun 1993

Donor And Acceptor Concentrations In Molecular-Beam Epitaxial Gaas Grown At 300-Degrees-C And 400-Degrees-C, David C. Look, G. D. Robinson, J. R. Sizelove, C. E. Stutz

Physics Faculty Publications

The first Hall‐effect measurements on molecular beam epitaxial GaAs layers grown at the low temperatures of 300 and 400 °C are reported. Two independent methods were used to determine donor ND and acceptor NA concentrations and activation energy ED0, with the following combined results: ND≂3±1×1018, NA≂1.5±1×1017 cm−3, and ED0=0.645±0.009 eV for the 300 °C layer; ND≂2±1×1017, NA≂7±3×1016 cm−3, and ED0=0.648±0.003 eV for the 400 °C layer. Thus, the deep donor is …

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Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 9, Number 5, May 1993, College Of Engineering And Computer Science, Wright State University May 1993

Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 9, Number 5, May 1993, College Of Engineering And Computer Science, Wright State University

BITs and PCs Newsletter

An eight page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.

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Photoquenching And Thermal Recovery Of A Thermally Stimulated Current Peak In Semi-Insulating Gaas, Z-Q. Fang, David C. Look May 1993

Photoquenching And Thermal Recovery Of A Thermally Stimulated Current Peak In Semi-Insulating Gaas, Z-Q. Fang, David C. Look

Physics Faculty Publications

A prominent thermally stimulated current peak T5 appearing in semi‐insulating GaAs is shown to photoquench under infrared illumination, and then thermally recover at a rate r=2.0×108 exp(−0.26 eV/kT) s−1, exactly the same as that observed for EL2, within experimental error. Two possible explanations exist: (1) T5 and EL2 are microscopically very similar, probably each with an AsGa core; or (2) T5 is an electron trap that only appears to quench and recover with EL2 because EL2 controls the electron lifetime. Several other traps show similar quenching and recovery behavior.

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Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 9, Number 4, April 1993, College Of Engineering And Computer Science, Wright State University Apr 1993

Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 9, Number 4, April 1993, College Of Engineering And Computer Science, Wright State University

BITs and PCs Newsletter

An eight page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.

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Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 9, Number 3, March 1993, College Of Engineering And Computer Science, Wright State University Mar 1993

Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 9, Number 3, March 1993, College Of Engineering And Computer Science, Wright State University

BITs and PCs Newsletter

A twelve page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.

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Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 9, Number 2, February 1993, College Of Engineering And Computer Science, Wright State University Feb 1993

Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 9, Number 2, February 1993, College Of Engineering And Computer Science, Wright State University

BITs and PCs Newsletter

A fourteen page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.

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The Full Group Of A Countable Measurable Equivalence Relation, Richard Mercer Feb 1993

The Full Group Of A Countable Measurable Equivalence Relation, Richard Mercer

Mathematics and Statistics Faculty Publications

We study the group of all ''R-automorphisms'' of a countable equivalence relation R on a standard Borel space, special Borel automorphisms whose graphs lie in R. We show that such a group always contains periodic maps of each order sufficient to generate R. A construction based on these periodic maps leads to totally nonperiodic R-automorphisms all of whose powers have disjoint graphs. The presence of a large number of periodic maps allows us to present a version of the Rohlin Lemma for R-automorphisms. Finally we show that this group always contains copies of free …

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Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 9, Number 1, January 1993, College Of Engineering And Computer Science, Wright State University Jan 1993

Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 9, Number 1, January 1993, College Of Engineering And Computer Science, Wright State University

BITs and PCs Newsletter

A ten page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.

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Uniqueness Of Radial Solutions Of Semilinear Elliptic Equations, Man Kam Kwong, Yi Li Jan 1993

Uniqueness Of Radial Solutions Of Semilinear Elliptic Equations, Man Kam Kwong, Yi Li

Yi Li

E. Yanagida recently proved that the classical Matukuma equation with a given exponent has only one finite mass solution. We show how similar ideas can be exploited to obtain uniqueness results for other classes of equations as well as Matukuma equations with more general coefficients.

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Radial Symmetry Of Positive Solutions Of Nonlinear Elliptic Equations In Rn, Yi Li, Wei-Ming Ni Jan 1993

Radial Symmetry Of Positive Solutions Of Nonlinear Elliptic Equations In Rn, Yi Li, Wei-Ming Ni

Yi Li

No abstract provided.

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On The Positive Solutions Of The Matukuma Equation, Yi Li Jan 1993

On The Positive Solutions Of The Matukuma Equation, Yi Li

Yi Li

No abstract provided.

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On The Positive Solutions Of The Matukuma Equation, Yi Li Jan 1993

On The Positive Solutions Of The Matukuma Equation, Yi Li

Mathematics and Statistics Faculty Publications

No abstract provided.

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Radial Symmetry Of Positive Solutions Of Nonlinear Elliptic Equations In Rn, Yi Li, Wei-Ming Ni Jan 1993

Radial Symmetry Of Positive Solutions Of Nonlinear Elliptic Equations In Rn, Yi Li, Wei-Ming Ni

Mathematics and Statistics Faculty Publications

No abstract provided.

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New Asga Related Center In Gaas, David C. Look, Z-Q. Fang, J. R. Sizelove, C. E. Stutz Jan 1993

New Asga Related Center In Gaas, David C. Look, Z-Q. Fang, J. R. Sizelove, C. E. Stutz

Physics Faculty Publications

A new center related to AsGa has been found at relatively high concentrations (1017 cm-;3) in semi‐insulating (2×10;7 Ω cm) molecular beam epitaxial GaAs grown at 400 °C. Although the ir photoquenching and thermal recovery characteristics are nearly identical to those of ;EL2, the thermal activation energy is only 0.65±0.01 eV, much lower than the ;EL2 value of 0.75±0.01 eV. Other properties which are different include the electron‐capture barrier energy, hyperfine constant, and magnetic circular dichroism spectrum.

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The Production And Escape Of Nitrogen Atoms On Mars, Jane L. Fox Jan 1993

The Production And Escape Of Nitrogen Atoms On Mars, Jane L. Fox

Physics Faculty Publications

We have computed the production rates and densities of odd nitrogen species in the Martian atmosphere using updated rate coefficients and a revised ionosphere-thermosphere model. We find that the computed densities of NO are somewhat smaller than those measured by Viking 1, but reasonable agreement can be obtained by assuming that the rate coefficient for loss of odd nitrogen in the reaction of N with NO is smaller at temperatures that prevail in the lower Martian thermosphere (about 130–160 K) than the standard value, which applies to temperatures of 200–400 K. We have also modeled the escape fluxes of N …

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Recovery Of Quenched Hopping Conduction In Gaas-Layers Grown By Molecular-Beam Epitaxy At 200-Degrees-C, David C. Look, Z-Q. Fang, J. R. Sizelove Jan 1993

Recovery Of Quenched Hopping Conduction In Gaas-Layers Grown By Molecular-Beam Epitaxy At 200-Degrees-C, David C. Look, Z-Q. Fang, J. R. Sizelove

Physics Faculty Publications

The dark current at 82 K, in GaAs layers grown by molecular-beam epitaxy at 200 °C and annealed at 550 °C, is reduced by a factor 350 after 5 min of IR (hν<~1.12 eV) light illumination. As temperature is swept upward at 0.2 K/s, the current recovers rapidly near 130 K. A numerical analysis of the current recovery, based on hopping conduction, gives an excellent fit to the data for a thermal recovery rate r=3×108 exp(-0.26/kT), very close to the rate observed for EL2 (AsGa). This proves that the conduction below 300 K in this material is due to hopping between AsGa-related centers in their ground states. Variable-range hopping [exp-(T0/T)1/4] gives a slightly better fit to the data than nearest-neighbor hopping [exp(-ɛ3/kT)] in the range T=82-160 K, but the fitted recovery …

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So Far (Schematically) Yet So Near (Semantically), Amit P. Sheth, Vipul Kashyap Jan 1993

So Far (Schematically) Yet So Near (Semantically), Amit P. Sheth, Vipul Kashyap

Kno.e.sis Publications

In a multidatabase system, schematic conflicts between two objects are usually of interest only when the objects have some semantic affinity. In this paper we try to reconcile the two perspectives. We first define the concept of semantic proximity and provide a semantic taxonomy. We then enumerate and classify the schematic and data conflicts. We discuss possible semantic similarities between two objects that have various types of schematic and data conflicts. Issues of uncertain information and inconsistent information are also addressed.

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On Transactional Workflows, Amit P. Sheth, Marek Rusinkiewicz Jan 1993

On Transactional Workflows, Amit P. Sheth, Marek Rusinkiewicz

Kno.e.sis Publications

The basic transaction model has evolved over time to incorporate more complex transactions structures and to take the advantage of semantics of higher-level operations that cannot be seen at the level of page reads and writes. Well known examples of such extended transaction models include nested and multi-level transactions. A number of relaxed transaction models have been defined in the last several years that permit a controlled relaxation of the transaction isolation and atomicity to better match the requirements of various database applications. Correctness criteria other than global serializability have also been proposed. Several examples of extended/relaxed transaction models are …

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Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 8, Number 8, November 1992, College Of Engineering And Computer Science, Wright State University Nov 1992

Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 8, Number 8, November 1992, College Of Engineering And Computer Science, Wright State University

BITs and PCs Newsletter

A fourteen page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.

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Student Fact Book, Fall 1992, Wright State University, Office Of Student Information Systems, Wright State University Oct 1992

Student Fact Book, Fall 1992, Wright State University, Office Of Student Information Systems, Wright State University

Wright State University Student Fact Books

The student fact book has general demographic information on all students enrolled at Wright State University for Fall Quarter, 1992.

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Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 8, Number 7, October 1992, College Of Engineering And Computer Science, Wright State University Oct 1992

Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 8, Number 7, October 1992, College Of Engineering And Computer Science, Wright State University

BITs and PCs Newsletter

A ten page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.

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Abduction In Annotated Logic Programming, Krishnaprasad Thirunarayan Oct 1992

Abduction In Annotated Logic Programming, Krishnaprasad Thirunarayan

Kno.e.sis Publications

The author investigates techniques to make the logic programming paradigm more expressive for knowledge representation, while simultaneously retaining the computational advantages of efficiency and simplicity. He extends the annotated language of K. Thirunarayan and K. Kifer (1989) in various directions to obtain an enriched representation language. In particular, rule bodies are permitted to be a conjunction of literals, and the rules to be recursive. A class of annotated logic programs called the stratified programs is identified which can be given a unique supported minimal Herbrand model as their meaning. Abductive reasoning is integrated into this annotated logic framework. The notion …

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Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 8, Number 6, September 1992, College Of Engineering And Computer Science, Wright State University Sep 1992

Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 8, Number 6, September 1992, College Of Engineering And Computer Science, Wright State University

BITs and PCs Newsletter

An eight page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.

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Shifted X-Ray Photoelectron Peak In Molecular-Beam Epitaxial Gaas Grown At 200 Degrees C, David C. Look, J. T. Grant, J. R. Sizelove Sep 1992

Shifted X-Ray Photoelectron Peak In Molecular-Beam Epitaxial Gaas Grown At 200 Degrees C, David C. Look, J. T. Grant, J. R. Sizelove

Physics Faculty Publications

X‐ray photoelectron spectroscopic results show that molecular beam epitaxial GaAs grown at 200 °C has a reduced effective surface potential energy, about 0.5 eV, compared with the usual 0.7 eV. A Poisson analysis of the data, using parameters from Hall effect and absorption measurements, requires that the Fermi‐level‐controlling defect in this material must have a significantly lower activation energy than that of EL2, an unexpected result.

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Photoquenching Of Hopping Conduction In Low-Temperature-Grown Molecular-Beam-Epitaxial Gaas, Z-Q. Fang, David C. Look Sep 1992

Photoquenching Of Hopping Conduction In Low-Temperature-Grown Molecular-Beam-Epitaxial Gaas, Z-Q. Fang, David C. Look

Physics Faculty Publications

We have observed IR photoquenching of the hopping conduction in GaAs samples grown by molecular beam epitaxy at the low temperature of 250 °C and annealed at temperatures from 300 to 600 °C. A key element in the success of this study is removal of the layers from their substrates. The hopping conduction recovers at about 140 K, with a thermal activation energy of about 0.3 eV.

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