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Electrical and Computer Engineering

Old Dominion University

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Articles 301 - 315 of 315

Full-Text Articles in Physical Sciences and Mathematics

Paschen's Law For A Hollow Cathode Discharge, H. Eichhorn, K. H. Schoenbach, T. Tessnow Jan 1993

Paschen's Law For A Hollow Cathode Discharge, H. Eichhorn, K. H. Schoenbach, T. Tessnow

Bioelectrics Publications

An expression for the breakdown voltage of a one‐dimensional hollow cathode discharge has been derived. The breakdown condition which corresponds to Paschen’s law contains, in addition to the first Townsend coefficient, and the secondary electron emission coefficient two parameters which characterize the reflecting action of the electric field and the lifetime of the electrons in the discharge. The breakdown voltage for a hollow cathode discharge in helium was calculated and compared to that of a glow discharge operating under similar conditions.

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Studies Of Electron-Beam Penetration And Free-Carrier Generation In Diamond Films, R. P. Joshi, K. H. Schoenbach, C. Molina, W. W. Hofer Jan 1993

Studies Of Electron-Beam Penetration And Free-Carrier Generation In Diamond Films, R. P. Joshi, K. H. Schoenbach, C. Molina, W. W. Hofer

Bioelectrics Publications

Experimental observations of the energy‐dependent electron‐beam penetration in type II‐A natural diamond are reported. The experimental data are compared with results obtained from numerical Monte Carlo simulations, and the results are in very good agreement. The results also reveal that a threshold energy of about 125 keV is necessary for complete penetration for a 35 μm sample. It is found that over the 30–180 keV range, the energy dependence of the penetration depth and total path length exhibits a power‐law relation. Monte Carlo simulations have also been performed to investigate the excess carrier‐generation profiles within diamond for a set of …

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Temporal Development Of Electric Field Structures In Photoconductive Gaas Switches, K. H. Schoenbach, J. S. Kenney, F.E. Peterkin, R. J. Allen Jan 1993

Temporal Development Of Electric Field Structures In Photoconductive Gaas Switches, K. H. Schoenbach, J. S. Kenney, F.E. Peterkin, R. J. Allen

Bioelectrics Publications

The temporal development of the electric field distribution in semi‐insulating GaAs photoconductive switches operated in the linear and lock‐on mode has been studied. The field structure was obtained by recording a change in the absorption pattern of the switch due to the Franz–Keldysh effect at a wavelength near the band edge of GaAs. In the linear mode, a high field layer develops at the cathode contact after laser activation. With increasing applied voltage, domainlike structures become visible in the anode region and the switch transits into the lock‐on state, a permanent filamentary electrical discharge. Calibration measurements show the field intensity …

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Design And Implementation Of Fuzzy Logic Controllers. Thesis Final Report, 27 July 1992 - 1 January 1993, Osama A. Abihana, Oscar R. Gonzalez Jan 1993

Design And Implementation Of Fuzzy Logic Controllers. Thesis Final Report, 27 July 1992 - 1 January 1993, Osama A. Abihana, Oscar R. Gonzalez

Electrical & Computer Engineering Faculty Publications

The main objectives of our research are to present a self-contained overview of fuzzy sets and fuzzy logic, develop a methodology for control system design using fuzzy logic controllers, and to design and implement a fuzzy logic controller for a real system. We first present the fundamental concepts of fuzzy sets and fuzzy logic. Fuzzy sets and basic fuzzy operations are defined. In addition, for control systems, it is important to understand the concepts of linguistic values, term sets, fuzzy rule base, inference methods, and defuzzification methods. Second, we introduce a four-step fuzzy logic control system design procedure. The design …

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Effect Of Fluctuations On Lower Hybrid Power Deposition And Hard X-Ray Detection, George Vahala, Linda L. Vahala, Paul T. Bonoli Jan 1992

Effect Of Fluctuations On Lower Hybrid Power Deposition And Hard X-Ray Detection, George Vahala, Linda L. Vahala, Paul T. Bonoli

Electrical & Computer Engineering Faculty Publications

The hard X-ray intensity radial profiles from lower hybrid current drive experiments are interpreted as being correlated with fluctuations in the bulk plasma. This view seems to be dictated by comparing the hard X-ray data for various n║ with the Monte Carlo solutions of the lower hybrid wave energy deposition on plasma electrons. Information on internal magnetic fluctuations may, under certain conditions, be unfolded from a n║ scan of the hard X-ray profiles.

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Electric Field Induced Emission As A Diagnostic Tool For Measurement Of Local Electric Field Strengths, A. N. Dharamsi, K. H. Schoenbach Jan 1991

Electric Field Induced Emission As A Diagnostic Tool For Measurement Of Local Electric Field Strengths, A. N. Dharamsi, K. H. Schoenbach

Bioelectrics Publications

The phenomenon of electric field induced (EFI) emission is examined in several diatomic and polyatomic molecules. The possibility of using this phenomenon as a diagnostic tool to measure, nonintrusively, the strength and direction of local electric fields in plasmas is discussed. An estimate of the EFI signal emitted in a typical application plasma is given. This yields a lower bound on the detector sensitivity necessary to exploit EFI emission in practical applications. It is concluded that, at present, the EFI signal could be measured by some very sensitive infrared detection schemes available. Current progress in infrared detector technology, if maintained, …

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A Model Of Dc Glow Discharges With Abnormal Cathode Fall, Karl H. Schoenbach, Hao Chen, G. Schaefer Jan 1990

A Model Of Dc Glow Discharges With Abnormal Cathode Fall, Karl H. Schoenbach, Hao Chen, G. Schaefer

Bioelectrics Publications

A model for an abnormal glow discharge, including a self‐consistent analysis of the cathode fall, was developed. It combines microscopic particle simulation by means of Monte Carlo methods with a fluid model of the gas discharge. The model allows calculations of the steady‐state electrical field distribution, the charged‐particle densities, and the current densities along the axis of the discharge. The model was used to simulate a glow discharge in 80% He and 20% SF6 at a pressure of 8 Torr with a current density of 1 A/cm2. The computed discharge voltage agrees well with measured values. The …

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Influence Of Copper Doping On The Performance Of Optically Controlled Gaas Switches, St. T. Ko, V. K. Lakdawala, K. H. Schoenbach, M. S. Mazzola Jan 1990

Influence Of Copper Doping On The Performance Of Optically Controlled Gaas Switches, St. T. Ko, V. K. Lakdawala, K. H. Schoenbach, M. S. Mazzola

Electrical & Computer Engineering Faculty Publications

The influence of the copper concentration in silicon-doped gallium arsenide on the photoionization and photoquenching of charge carriers was studied both experimentally and theoretically. The studies indicate that the compensation ratio (NCu/NSi) is an important parameter for the GaAs:Si:Cu switch systems with regard to the turn-on and turn-off performance. The optimum copper concentration for the use of GaAs:Si:Cu as an optically controlled closing and opening switch is determined.

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Measurement Of Magnetic Fluctuations By O-X Mode Conversion, L. L. Vahala, G. Vahala, N. Bretz Jan 1990

Measurement Of Magnetic Fluctuations By O-X Mode Conversion, L. L. Vahala, G. Vahala, N. Bretz

Electrical & Computer Engineering Faculty Publications

The possibility of measuring magnetic fluctuations in a fusion plasma is considered by examining the O→X mode conversion. Under certain conditions and with good angular resolution, this mode conversion can be attributed to the presence of magnetic fluctuations even though the level of these fluctuations is much lower than that of density fluctuations. Some nonideal effects such as mode polarization mismatch at the plasma edge are also discussed.

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Nanosecond Optical Quenching Of Photoconductivity In A Bulk Gaas Switch, M. S. Mazzola, K. H. Schoenbach, V. K. Lakdawala, S. T. Ko Jan 1989

Nanosecond Optical Quenching Of Photoconductivity In A Bulk Gaas Switch, M. S. Mazzola, K. H. Schoenbach, V. K. Lakdawala, S. T. Ko

Electrical & Computer Engineering Faculty Publications

Persistent photoconductivity in copper-compensated, silicon-doped semi-insulating gallium arsenide with a time constant as large as 30 µs has been excited by sub-band-gap laser radiation of photon energy greater than 1 eV. This photoconductivity has been quenched on a nanosecond time scale by laser radiation of photon energy less than 1 eV. The proven ability to turn the switch conductance on and off on command, and to scale the switch to high power could make this semiconductor material the basis of an optically controlled pulsed-power closing and opening switch.

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Gaas Photoconductive Closing Switches With High Dark Resistance And Microsecond Conductivity Decay, M. S. Mazzola, K. H. Schoenbach, V. K. Lakdawala, R. Germer, G. M. Loubriel, F. J. Zutavern Jan 1989

Gaas Photoconductive Closing Switches With High Dark Resistance And Microsecond Conductivity Decay, M. S. Mazzola, K. H. Schoenbach, V. K. Lakdawala, R. Germer, G. M. Loubriel, F. J. Zutavern

Electrical & Computer Engineering Faculty Publications

Silicon-doped n-type gallium arsenide crystals, compensated with diffused copper, were studied with respect to their application as photoconductive, high-power closing switches. The attractive features of GaAs:Cu switches are their high dark resistivity, their efficient activation with Nd:YAG laser radiation, and their microsecond conductivity decay time constant. In the authors' experiment, electric fields are high as 19 kV/cm were switched, and current densities of up to 10 kA/cm2 were conducted through a closely compensated crystal. At field strengths greater than approximately 10 kV/cm, a voltage `lock-on' effect was observed.

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An Optically Controlled Closing And Opening Semiconductor Switch, K. H. Schoenbach, V. K. Lakdawala, R. Germer, S. T. Ko Jan 1988

An Optically Controlled Closing And Opening Semiconductor Switch, K. H. Schoenbach, V. K. Lakdawala, R. Germer, S. T. Ko

Electrical & Computer Engineering Faculty Publications

A concept for a bulk semiconductor switch is presented, where the conductivity is increased and reduced, respectively, through illumination with light of different wavelengths. The increase in conductivity is accomplished by electron ionization from deep centers and generation of bound holes. The reduction of conductivity is obtained by hole ionization from the excited centers and subsequent recombination of free electrons and holes. The transient behavior of electron and hole density in a high power semiconductor (GaAs:Cu) switch is computed by means of a rate equation model. Changes in conductivity by five orders of magnitude can be obtained.

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Comment On "Orientation, Alignment, And Hyperfine Effects On Dissociation Of Diatomic Molecules To Open Shell Atoms", Mark D. Havey, Linda L. Vahala Jan 1987

Comment On "Orientation, Alignment, And Hyperfine Effects On Dissociation Of Diatomic Molecules To Open Shell Atoms", Mark D. Havey, Linda L. Vahala

Electrical & Computer Engineering Faculty Publications

A recent paper in this journal [Y. B. Band e t a l., J. Chem. Phys. 8 4, 3762 (1986)] reported parameters describing orientation and alignment produced, in an axial recoil limit, by one photondissociation of diatomic molecules. Reported also were values, applicable to the resonance transitions of the alkali atoms, for orientation and alignment depolarization coefficients. Most of the numerical values reported for the coefficients were incorrect, in some cases by as much as a factor of 2. We report a tabulation of correct depolarization coefficients applicable to the resonance transitions of common alkali isotopes. Further, the coefficients …

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Luminescence In Slipped And Dislocation-Free Laser-Annealed Silicon, R.H. Uebbing, P. Wagner, H. Baumgart, H. J. Queisser Jan 1980

Luminescence In Slipped And Dislocation-Free Laser-Annealed Silicon, R.H. Uebbing, P. Wagner, H. Baumgart, H. J. Queisser

Electrical & Computer Engineering Faculty Publications

Photoluminescence of cw laser-annealed silicon shows a dramatic difference in electronic behavior of the reconstructed material depending upon either creation or suppression of dislocations. Beyond a critical exposure time slip appears, and the luminescence of these samples is dominated by dislocation-related defect levels.

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Stable Equilibrium Statistical States For Spheromaks, George Vahala, Linda L. Vahala Jan 1979

Stable Equilibrium Statistical States For Spheromaks, George Vahala, Linda L. Vahala

Electrical & Computer Engineering Faculty Publications

Incompressible nondissipative magnetohydrodynamic turbulence is treated for spherical systems. From the absolute equilibrium expectation values of the fields one can investigate those initially quiescent states for which no large mean square velocity will develop. This stable state is force-free and gives rise to the Hill vortex structure for the magnetic flux surfaces.

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