Physical Sciences and Mathematics Commons^™

Metal Modulation Epitaxy Growth For Extremely High Hole Concentrations Above 10(19) Cm(-3) In Gan, Gon Namkoong, Elaissa Trybus, Kyung Keun Lee, Michael Moseley, W. Alan Doolittle, David C. Look

Applied Research Center Publications

The free hole carriers in GaN have been limited to concentrations in the low 10¹⁸ cm⁻³ range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to ~10% in GaN by a periodic doping, metal modulation epitaxy growth technique. The hole concentrations grown by periodically modulating Ga atoms and Mg dopants were over ~1.5 x 10¹⁹ cm⁻³.

© 2008 American Institute of Physics.

Formation Of In- (2×1) And In Islands On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The growth of indium on a vicinal Si (100) - (2×1) surface at room temperature by femtosecond pulsed laser deposition (fsPLD) was investigated by in situ reflection high-energy electron diffraction (RHEED). Recovery of the RHEED intensity was observed between laser pulses and when the growth was terminated. The surface diffusion coefficient of deposited In on initial two-dimensional (2D) In- (2×1) layer was determined. As growth proceeds, three-dimensional In islands grew on the 2D In- (2×1) layer. The RHEED specular profile was analyzed during film growth, while the grown In islands were examined by ex situ atomic force microscopy. The full …

Reactive Oxygen Emission From Microwave Discharge Plasmas, S. Popovic, M. Rašković, S. P. Kuo, L. Vuskovic

Physics Faculty Publications

Metastable oxygen atoms and molecules have received increased interest because of their function in surface modification, bio-decontamination and many other industrial applications, in addition to the role in the upper atmospheric layer chemistry. We review work on production and detection of metastable oxygen and we describe our experiments, including the development of techniques for measurement of metastable molecular oxygen. We show that either metastable oxygen molecules or metastable oxygen atoms can be produced in large quantities in electrical discharges, carefully tailored to promote the required kinetics. Although the two species may coexist, colder discharge regimes favor production of molecules, while …

Entopic Lattice Boltzmann Representations Required To Recover Navier Stokes Flows, Brian Keating, George Vahala, Jeffrey Yepez, Min Soe, Linda L. Vahala

Electrical & Computer Engineering Faculty Publications

There are two disparate formulations of the entropic lattice Boltzmann scheme: one of these theories revolves around the analog of the discrete Boltzmann H function of standard extensive statistical mechanics, while the other revolves around the nonextensive Tsallis entropy. It is shown here that it is the nonenforcement of the pressure tensor moment constraints that lead to extremizations of entropy resulting in Tsallis-like forms. However, with the imposition of the pressure tensor moment constraint, as is fundamentally necessary for the recovery of the Navier-Stokes equations, it is proved that the entropy function must be of the discrete Boltzmann form. Three-dimensional …

Tio2 Breakdown Under Pulsed Conditions, G. Zhao, R. P. Joshi, V. K. Lakdawala, E. Schamiloglu, H. Hjalmarson

Electrical & Computer Engineering Faculty Publications

Model studies of current conduction and breakdown in TiO₂ were carried out. Our simulation results indicate that electrical breakdown of TiO₂ under multiple-pulsed conditions can occur at lower voltages as compared to quasi-dc biasing. This is in agreement with recent experimental data and is indicative of a cumulative phenomena. We demonstrate that the lower breakdown voltages observed in TiO₂ under pulsed conditions is a direct rise-time effect, coupled with successive detrapping at the grain boundaries. 2007 American Institute of Physics.