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2024

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Articles 151 - 153 of 153

Full-Text Articles in Nanoscience and Nanotechnology

Cellular Structure Mediated Dislocation Regulation In Additively Manufactured Refractory High Entropy Alloy, Changxi Liu, Lechun Xie, Lai-Chang Zhang, Liqiang Wang Jan 2024

Cellular Structure Mediated Dislocation Regulation In Additively Manufactured Refractory High Entropy Alloy, Changxi Liu, Lechun Xie, Lai-Chang Zhang, Liqiang Wang

Research outputs 2022 to 2026

A Ti1.5Nb1Ta0.5Zr1Mo0.5 (TNTZM) refractory high entropy alloy (HEA) with a cellular structure was successfully fabricated by laser powder bed fusion (L-PBF). Compression testing and cyclic deformation testing results revealed that, in the cellular structure, the cell walls could store dislocations. Furthermore, the local chemical order (LCO) plays a crucial role in controlling dislocations within the cell wall region. The LCO not only facilitates dislocation slip but also generates additional lattice distortion upon stress-induced LCO destruction to enable dislocation pinning. This work offers novel insights into the microstructure of additively manufactured refractory HEAs and uncovers a distinct dislocation regulation mechanism.


Tailored Micromagnet Sorting Gate For Simultaneous Multiple Cell Screening In Portable Magnetophoretic Cell-On-Chip Platforms, Jonghwan Yoon, Yumin Kang, Hyeonseol Kim, Abbas Ali, Keonmok Kim, Sri Ramulu Torati, Mi-Young Im, Changyeop Jeon, Byeonghwa Lim, Cheolgi Kim Jan 2024

Tailored Micromagnet Sorting Gate For Simultaneous Multiple Cell Screening In Portable Magnetophoretic Cell-On-Chip Platforms, Jonghwan Yoon, Yumin Kang, Hyeonseol Kim, Abbas Ali, Keonmok Kim, Sri Ramulu Torati, Mi-Young Im, Changyeop Jeon, Byeonghwa Lim, Cheolgi Kim

Center for Bioelectronics Publications

Conventional magnetophoresis techniques for manipulating biocarriers and cells predominantly rely on large-scale electromagnetic systems, which is a major obstacle to the development of portable and miniaturized cell-on-chip platforms. Herein, a novel magnetic engineering approach by tailoring a nanoscale notch on a disk micromagnet using two-step optical and thermal lithography is developed. Versatile manipulations are demonstrated, such as separation and trapping, of carriers and cells by mediating changes in the magnetic domain structure and discontinuous movement of magnetic energy wells around the circumferential edge of the micromagnet caused by a locally fabricated nano-notch in a low magnetic field system. The motion …


Characterization And Measurement Limitations Using Non-Destructive Mueller Matrix Scatterometry (Mmse) And X-Ray Diffraction (Xxrd) Techniques For Gate All Around (Gaa) Transistor Test Structures: Limitations And Superlattice Effects In Advanced Si/Si(1-X)Ge(X) Superlattice Nanowire Test Structures And Measurability Of Simulated Horizontal Gaa Test Structures, Ezra Mel Beltran Pasikatan Jan 2024

Characterization And Measurement Limitations Using Non-Destructive Mueller Matrix Scatterometry (Mmse) And X-Ray Diffraction (Xxrd) Techniques For Gate All Around (Gaa) Transistor Test Structures: Limitations And Superlattice Effects In Advanced Si/Si(1-X)Ge(X) Superlattice Nanowire Test Structures And Measurability Of Simulated Horizontal Gaa Test Structures, Ezra Mel Beltran Pasikatan

Electronic Theses & Dissertations (2024 - present)

Advanced semiconductor devices are moving toward 3D geometries due to scaling demands and performance requirements. Nondestructive metrology necessary for process control of 3D structures must be advanced to facilitate their transition from technology development to high volume manufacturing. Thin film metrology using Mueller Matrix Spectroscopic Ellipsometry (MMSE) and X-ray Diffraction (XRD) film metrology, as well as patterned structure metrology using Optical Critical Dimension (OCD) and X-ray Fluorescence (XRF) techniques have proved capable of measuring the Si/ Si(1-x)Ge(x) superlattices and gate-all-around (GAA) transistor test structures. Because these techniques are indirect, their limitations associated with superlattice device structures need …