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Legacy Theses & Dissertations (2009 - 2024)

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Articles 151 - 173 of 173

Full-Text Articles in Nanoscience and Nanotechnology

Role Of Interface Band Structure On Hot Electron Transport, John J. Garramone Jan 2011

Role Of Interface Band Structure On Hot Electron Transport, John J. Garramone

Legacy Theses & Dissertations (2009 - 2024)

Knowledge of electron transport through materials and interfaces is fundamentally and technologically important. For example, metal interconnects within integrated circuits suffer increasingly from electromigration and signal delay due to an increase in resistance from grain boundary and sidewall scattering since their dimensions are becoming shorter than the electron mean free path. Additionally, all semiconductor based devices require the transport of electrons through materials and interfaces where scattering and parallel momentum conservation are important. In this thesis, the inelastic and elastic scattering of hot electrons are studied in nanometer thick copper, silver and gold films deposited on silicon substrates. Hot electrons …

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Applying X-Ray Microscopy And Finite Element Modeling (Fem) To Identify The Mechanism Of Stress-Assisted Void Growth In Through Silicon Via (Tsv), Lay Wai Kong Jan 2011

Applying X-Ray Microscopy And Finite Element Modeling (Fem) To Identify The Mechanism Of Stress-Assisted Void Growth In Through Silicon Via (Tsv), Lay Wai Kong

Legacy Theses & Dissertations (2009 - 2024)

Fabricating through-silicon vias (TSVs) is challenging, especially for conformally filled TSVs, often hampered by the seam line and void inside the TSVs. Stress-assisted void growth in TSVs has been studied by finite element stress modeling and X-ray computed tomography (XCT). Because X-ray imaging does not require TSVs to be physically cross-sectioned, the same TSV can be imaged before and after annealing. Using 8 keV laboratory-based XCT, voids formed during copper electroplating are observed in as-deposited samples and void growth is observed at the void location after annealing. We hypothesize that the mechanism generating voids is hydrostatic stress-assisted void growth. Stresses …

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Optimization And Development Of Silicon-Based Semiconductor Devices Using Tcad, Changwoo Lee Jan 2011

Optimization And Development Of Silicon-Based Semiconductor Devices Using Tcad, Changwoo Lee

Legacy Theses & Dissertations (2009 - 2024)

Computer simulation of the electrical and optical properties of semiconductor devices has been became as an essential tool for developing new device as well as for improving existing device. This presentation describes applications of physical device simulation: (1) design optimization of power MOSFET, which is single crystalline based silicon semiconductor device, for cryogenic temperature application and (2) two-dimensional device simulation of amorphous silicon based solar cell to develop novel photovoltaic device with high efficiency.

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Electron-Phonon Interactions And Quantum Confinement Effects On Optical Transitions In Nanoscale Silicon Films, Vimal Kumar Kamineni Jan 2011

Electron-Phonon Interactions And Quantum Confinement Effects On Optical Transitions In Nanoscale Silicon Films, Vimal Kumar Kamineni

Legacy Theses & Dissertations (2009 - 2024)

Theoretical studies have attributed the temperature dependence of the linear optical response (dielectric function) of bulk semiconductors to electron-phonon interactions and thermal expansion of the lattice. However, the role of phonons in the optical properties of nanoscale structures is often overlooked. This thesis systematically investigates the impact of both carrier confinement and electron-phonon interactions using nanoscale films of silicon in crystalline silicon quantum wells (c-Si QW). Spectroscopic ellipsometry (SE) is a linear optical technique used to of extract the dielectric function and thickness of very thin films. X-ray reflectivity (XRR) was used as the complementary thickness metrology method. The dielectric …

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Investigation Of Novel Alumina Nanoabrasive And The Interactions With Basic Chemical Components In Copper Chemical Mechanical Planarization (Cmp) Slurries, Shravanthi Lakshmi Manikonda Jan 2011

Investigation Of Novel Alumina Nanoabrasive And The Interactions With Basic Chemical Components In Copper Chemical Mechanical Planarization (Cmp) Slurries, Shravanthi Lakshmi Manikonda

Legacy Theses & Dissertations (2009 - 2024)

Chemical mechanical planarization (CMP) is an enabling process technology for IC fabrication to maintain global planarity across the wafer to satisfy lithographic depth of focus constraints. It also enables integration of materials that cannot be anisotropically etched, such as Cu. CMP utilizes nanoparticle abrasives in aqueous slurry to aid in planarization.

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Graphene-Based Interconnects : Electrical Performance And Reliability, Tianhua Yu Jan 2011

Graphene-Based Interconnects : Electrical Performance And Reliability, Tianhua Yu

Legacy Theses & Dissertations (2009 - 2024)

According to the ITRS Roadmap, on-chip interconnects wire width and current density will reach 22 nm and 5.8×106 A/cm2 in 2020, respectively. The electrical resistivity of Cu increases with scaled critical dimensions due to exacerbated carrier scattering at grain boundaries and interfaces, resulting in signal speed degradation. Electronmigration (EM)-related failure due to intensified current distribution posts extra limits to ultra-scaled systems. Innovative interconnect solutions are needed to tackle performance and scaling challenges.

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Applications Of Raman Spectroscopy For Silicon Stress Characterization In Integrated Circuits, Colin Mcdonough Jan 2011

Applications Of Raman Spectroscopy For Silicon Stress Characterization In Integrated Circuits, Colin Mcdonough

Legacy Theses & Dissertations (2009 - 2024)

The introduction of mechanical stress in Si-based integrated circuits (ICs), whether desired or undesired, is intrinsic to IC fabrication. The origins are diverse and result from the numerous materials, geometries, and processes involved in fabrication. These stresses can lead to such effects as delamination, void formation and migration, and fracture, and can significantly affect device performance. As a result, stress development is a major concern for reliability, process control, and device design. It is necessary to investigate and characterize the origins and levels of the induced stresses. A more complete fundamental understanding of the evolution of stress in ICs and …

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Extreme Ultraviolet Photoresists : Film Quantum Yields And Ler Of Thin Film Resists, Craig D. Higgins Jan 2011

Extreme Ultraviolet Photoresists : Film Quantum Yields And Ler Of Thin Film Resists, Craig D. Higgins

Legacy Theses & Dissertations (2009 - 2024)

Extreme ultraviolet (EUV) is the leading candidate for a commercially viable solution for next generation lithography. The development of EUV chemically amplified photoresists and processes are critical to the future lithographic requirements of the microelectronics industry. To meet the necessary requirements for both integrated circuit (IC) specifications and cost, the resolution, line-edge roughness (LER) and sensitivity all need to be reduced. Unfortunately, a fundamental trade-off has been observed between these three crucial elements. We have predicted that the best way to obtain the required resolution, line-edge roughness and sensitivity (RLS) is to create more acid molecules per photon absorbed. This …

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Energy Band Engineering Using Polarization Induced Interface Charges In Mocvd Grown Iii-Nitride Heterojunction Devices, Neeraj Tripathi Jan 2011

Energy Band Engineering Using Polarization Induced Interface Charges In Mocvd Grown Iii-Nitride Heterojunction Devices, Neeraj Tripathi

Legacy Theses & Dissertations (2009 - 2024)

Characteristics of III-nitride based heterojunction devices are greatly influenced by the presence of high density of polarization induced interface charges. Research undertaken in the current doctoral thesis demonstrates the effect of presence of one, three and six sheets of polarization induced charges in three different III-nitride based devices, namely in a photocathode, a high electron mobility transistor (HEMT) and a hyperspectral detector structure. Through a systematic set of experiments and theoretical modeling an in-depth study of the interaction between multiple sheets of polarization induced charges and their impact on energy band profile was undertaken. Various device designs were studied and …

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Development Of High Band Gap Absorber And Buffer Materials For Thin Film Solar Cell Applications, Daniel Dwyer Jan 2011

Development Of High Band Gap Absorber And Buffer Materials For Thin Film Solar Cell Applications, Daniel Dwyer

Legacy Theses & Dissertations (2009 - 2024)

CuInGaSe2 (CIGS) device efficiencies are the highest of the thin film absorber materials (vs. CdTe, α-Si, CuInSe2). However, the band gap of the highest efficiency CIGS cells deviates from the expected ideal value predicted by models. Widening the band gap to the theoretically ideal value is one way to increase cell efficiencies. Widening the band gap can be accomplished in two ways; by finding a solution to the Ga-related defects which limit the open circuit voltage at high Ga ratios, or by utilizing different elemental combinations to form an alternative high band gap photoactive Cu-chalcopyrite (which includes …

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Fluorinated Acid Amplifiers For Extreme Ultraviolet Lithography, Seth Aaron Kruger Jan 2011

Fluorinated Acid Amplifiers For Extreme Ultraviolet Lithography, Seth Aaron Kruger

Legacy Theses & Dissertations (2009 - 2024)

Extreme ultraviolet lithography (EUV) is a promising candidate for next generation lithography. Although EUV has great potential there are still many challenges that must be solved before the technology can be implemented in the high volume manufacturing of semiconductor devices. The lithographic performance of EUV photoresists is one aspect that requires improvement. Particularly, EUV resists need simultaneous improvements in three properties: resolution, line-edge-roughness and sensitivity. The incorporation of acid amplifiers (AAs) in resists is one method to improve all three properties.

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Quantum Dot Quantum Computation In Iii-V Type Semiconductor, Sanjay K. Prabhakar Jan 2010

Quantum Dot Quantum Computation In Iii-V Type Semiconductor, Sanjay K. Prabhakar

Legacy Theses & Dissertations (2009 - 2024)

Among recent proposals for next-generation, non-charge-based logic is the notion that a single electron can be trapped and spin of the electron can be manipulated through the application of gate potentials. In the thesis, there are two major contributions of the manipulation of electron spin. In regard to the first contribution, we present numerical simulations of such a spin in single electron devices for realistic asymmetric potentials in electrostatically confined quantum dot. Using analytical and numerical techniques we show that breaking in-plane rotational symmetry of the confining potential by applied gate voltage leads to a significant effect on the tuning …

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Investigation Of The Threshold Voltage Shift Effect Of La2o3 On Tin/Hfo2/La2o3/Sio2/Si Stacks, Ming Di Jan 2010

Investigation Of The Threshold Voltage Shift Effect Of La2o3 On Tin/Hfo2/La2o3/Sio2/Si Stacks, Ming Di

Legacy Theses & Dissertations (2009 - 2024)

The semiconductor industry continues to scale (shrink) transistor dimensions to both increase the number of transistors per integrated circuit and their speed. One important aspect of scaling is the need to decrease the equivalent oxide thickness of the transistor gate dielectric while minimizing leakage current. Traditional thin layer SiO2 or SiOxNy films have been replaced by higher dielectric constant film stacks Here we study one example, the HfO2/La2O3/SiO2 stack. This dissertation describes an investigation of the use of La2O3 to reduce the threshold voltage of TiN/HfO2/SiO2/Si stacks (high-k/metal gate stacks). A significant aspect of this study is the determination of …

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A Study Of Reticle Non-Flatness Induced Image Placement Error In Extreme Ultraviolet Lithography, Sudharshanan Raghunathan Jan 2010

A Study Of Reticle Non-Flatness Induced Image Placement Error In Extreme Ultraviolet Lithography, Sudharshanan Raghunathan

Legacy Theses & Dissertations (2009 - 2024)

As the semiconductor industry continues scaling devices to smaller sizes, the need for next generation lithography technology for fabricating these small structures has always been at the forefront. Over the past few years, conventional optical lithography technology which has adopted a series of resolution enhancement techniques to support the scaling needs is expected to run out of steam in the near future. Extreme Ultra Violet lithography (EUVL) is being actively pursued by the semiconductor industry as one of the most promising next generation lithographic technologies. Most of the issues unique to EUVL arise from the use of 13.5 nm light …

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Fabrication And Characterization Of Nanomaterials Grown By Electron Beam Induced Deposition Process, Juntao Li Jan 2010

Fabrication And Characterization Of Nanomaterials Grown By Electron Beam Induced Deposition Process, Juntao Li

Legacy Theses & Dissertations (2009 - 2024)

Platinum&ndash and tungsten&ndashcontaining materials were grown on bulk substrates from a variety of precursors including (CH3)3CH3C5H4Pt, W(CO)6, WF6, and Pt(PF3)4 in either a high vacuum dual beam focused ion beam/scanning electron microscope (FIB&ndashSEM) or an environmental scanning electron microscope (ESEM). The effects of deposition conditions on the growth kinetics, microstructure and composition of the grown materials, structural and chemical homogeneity of impurities inside the deposits as well as the resistivity were investigated.

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Nanoabrasives Retention And Removal Mechanisms In Polyurethane Pads For Copper Cmp, Iftikhar Ul-Hasan Jan 2010

Nanoabrasives Retention And Removal Mechanisms In Polyurethane Pads For Copper Cmp, Iftikhar Ul-Hasan

Legacy Theses & Dissertations (2009 - 2024)

The continued reduction in integrated circuit (IC) feature size requires similar reductions in surface defectivity. A key source of surface defects in IC fabrication processes stems from nanoabrasives used in chemical-mechanical planarization (CMP) processing. During CMP processing, polished surfaces are more vulnerable to defects including scratching, nanoabrasive particle adhesion and nanoabrasive agglomerate adhesion. The removal of these nano-sized particles is a priority for the IC fabrication industry and is reflected in the 2008 ITRS defect budget. However, there is insufficient technical understanding regarding the retention of residual nanoabrasives on the surfaces of the CMP pad following a CMP process and …

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Design And Development Of Highly Active, Nanoengineered, Platinum Based Core-Shell Electrodes For Proton Exchange Membrane Fuel Cells, Seth Louis Knupp Jan 2010

Design And Development Of Highly Active, Nanoengineered, Platinum Based Core-Shell Electrodes For Proton Exchange Membrane Fuel Cells, Seth Louis Knupp

Legacy Theses & Dissertations (2009 - 2024)

Highly active nanoengineered core-shell electrocatalyst have a great potential to be used as fuel cell electrodes. They can alleviate problems related with commercial carbon supported platinum by simultaneously lowering cost while enhancing reaction kinetics and overall performance. More recently, use of nanoengineered core-shell electrode structures have showed their ability to enhance the stability and overall lifetime of the catalyst without sacrificing the electrode's performance. We studied the potential of using highly active core-shell nanoparticles supported on carbon nanomaterials as fuel cell electrodes.

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Nanivid : A New Research Tool For Tissue Microenvironment Studies, Waseem Khan Raja Jan 2010

Nanivid : A New Research Tool For Tissue Microenvironment Studies, Waseem Khan Raja

Legacy Theses & Dissertations (2009 - 2024)

Metastatic tumors are heterogeneous in nature and composed of subpopulations of cells having various metastatic potentials. The time progression of a tumor creates a unique microenvironment to improve the invasion capabilities and survivability of cancer cells in different microenvironments. In the early stages of intravasation, cancer cells establish communication with other cell types through a paracrine loop and covers long distances by sensing growth factor gradients through extracellular matrices. Cellular migration both in vitro and in vivo is a complex process and to understand their motility in depth, sophisticated techniques are required to document and record events in real time. …

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A Study Of Cantilever-Free Instrumentation For Nanoscale Magnetic Measurements, Bruce Adair Altemus Jan 2009

A Study Of Cantilever-Free Instrumentation For Nanoscale Magnetic Measurements, Bruce Adair Altemus

Legacy Theses & Dissertations (2009 - 2024)

The evolution of the Atomic Force Microscope (AFM) into the Magnetic Force Microscope (MFM) and Magnetic Resonance Force Microscope (MRFM) has had a substantial impact on the characterization of nanoscale phenomena. Detection of 10-17 Newtons per root Hertz has occurred with use of an ultra-sensitive cantilever along with optical interferometry methods within these geometries. The sensitivity of these platforms is dependent on the characteristics of the cantilever, where increased length and a low Young's modulus increase the force sensitivity (meters/Newtons). Using IC fabrication techniques, the realization of generating cantilevers with this sensitivity is feasible, but stress compensation layers are required …

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A Study Of Cantilever-Free Instrumentation For Nanoscale Magnetic Measurements, Bruce Adair Altemus Jan 2009

A Study Of Cantilever-Free Instrumentation For Nanoscale Magnetic Measurements, Bruce Adair Altemus

Legacy Theses & Dissertations (2009 - 2024)

The evolution of the Atomic Force Microscope (AFM) into the Magnetic Force Microscope (MFM) and Magnetic Resonance Force Microscope (MRFM) has had a substantial impact on the characterization of nanoscale phenomena. Detection of 10-17 Newtons per root Hertz has occurred with use of an ultra-sensitive cantilever along with optical interferometry methods within these geometries. The sensitivity of these platforms is dependent on the characteristics of the cantilever, where increased length and a low Young's modulus increase the force sensitivity (meters/Newtons). Using IC fabrication techniques, the realization of generating cantilevers with this sensitivity is feasible, but stress compensation layers are required …

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Continuous Glucose Monitoring Microsensor With A Nanoscale Conducting Matrix And Redox Mediator, Daniel Pesantez Jan 2009

Continuous Glucose Monitoring Microsensor With A Nanoscale Conducting Matrix And Redox Mediator, Daniel Pesantez

Legacy Theses & Dissertations (2009 - 2024)

The major limiting factor in kidney clinical transplantation is the shortage of transplantable organs. The current inability to distinguish viability from non-viability on a prospective basis represents a major obstacle in any attempt to expand organ donor criteria. Consequently, a way to measure and monitor a relevant analyte to assess kidney viability is needed. For the first time, the initial development and characterization of a metabolic microsensor to assess kidney viability is presented. The rate of glucose consumption appears to serve as an indicator of kidney metabolism that may distinguish reversible from irreversible kidney damage. The proposed MetaSense (Metabolic Sensor) …

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Nanocomposite Thin Films Of Au Nanoparticles Embedded In Yttria-Stabilized Zirconia For Plasmonic-Based Harsh Environment Gas Detection, Phillip Henry Rogers Jan 2009

Nanocomposite Thin Films Of Au Nanoparticles Embedded In Yttria-Stabilized Zirconia For Plasmonic-Based Harsh Environment Gas Detection, Phillip Henry Rogers

Legacy Theses & Dissertations (2009 - 2024)

Increased health concerns due to the emission of gases linked to the production of tropospheric ozone by petroleum based fuel burning engines has resulted in the codification of more stringent emissions regulations domestically. Emissions regulations on commercial jetliners are one of the areas to be met with stricter standards. Currently there is not a sensing technology that can detect the emissions gases in the exhaust stream of a jet turbine engine with lower detection limits that meet these standards.

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Progress Towards Critical Dimension Low Vacuum Scanning Electron Microscopy, Vasiliki Tileli Jan 2009

Progress Towards Critical Dimension Low Vacuum Scanning Electron Microscopy, Vasiliki Tileli

Legacy Theses & Dissertations (2009 - 2024)

Low vacuum scanning electron microscopy (LVSEM) is proposed and evaluated for next generation Critical Dimension (CD) metrology. Its ability to control charging artifacts and hydrocarbon contamination in order to obtain high signal-to-noise ratio, high resolution image data from insulating materials make the technology an excellent match for the increased use of high-k dielectrics and shrinking feature size in the semiconductor industry. The presence of a gas in the LVSEM chamber means that the probe characteristics and secondary electron amplification, detection, and signal-to-noise ratio differ significantly from conventional high vacuum tools. In order for low vacuum CD approaches to be viable, …

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