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Articles 121 - 150 of 173
Full-Text Articles in Nanoscience and Nanotechnology
Plasma-Enhanced Atomic Layer Deposition Of Ruthenium-Titanium Nitride Mixed-Phase Layers For Direct-Plate Liner And Copper Diffusion Barrier Applications, Adam James Gildea
Plasma-Enhanced Atomic Layer Deposition Of Ruthenium-Titanium Nitride Mixed-Phase Layers For Direct-Plate Liner And Copper Diffusion Barrier Applications, Adam James Gildea
Legacy Theses & Dissertations (2009 - 2024)
Current interconnect networks in semiconductor processing utilize a sputtered TaN diffusion barrier, Ta liner, and Cu seed to improve the adhesion, microstructure, and electromigration resistance of electrochemically deposited copper that fills interconnect wires and vias. However, as wire/via widths shrink due to device scaling, it becomes increasingly difficult to have the volume of a wire/via be occupied with ECD Cu which increases line resistance and increases the delay in signal propagation in IC chips. A single layer that could serve the purpose of a Cu diffusion barrier and ECD Cu adhesion promoter could allow ECD Cu to occupy a larger …
Nb Doped Tio2 As A Cathode Catalyst Support Material For Polymer Electrolyte Membrane Fuel Cells, Alexander William O'Toole
Nb Doped Tio2 As A Cathode Catalyst Support Material For Polymer Electrolyte Membrane Fuel Cells, Alexander William O'Toole
Legacy Theses & Dissertations (2009 - 2024)
In order to reduce the emissions of greenhouse gases and reduce dependence on the use of fossil fuels, it is necessary to pursue alternative sources of energy. Transportation is a major contributor to the emission of greenhouse gases due to the use of fossil fuels in the internal combustion engine. To reduce emission of these pollutants into the atmosphere, research is needed to produce alternative solutions for vehicle transportation. Low temperature polymer electrolyte membrane fuel cells are energy conversion devices that provide an alternative to the internal combustion engine, however, they still have obstacles to overcome to achieve large scale …
Modified Statistical Dynamical Diffraction Theory : A Novel Metrological Analysis Method For Partially Relaxed And Defective C Doped Si And Sige Heterostructures, Paul Kenneth Shreeman
Modified Statistical Dynamical Diffraction Theory : A Novel Metrological Analysis Method For Partially Relaxed And Defective C Doped Si And Sige Heterostructures, Paul Kenneth Shreeman
Legacy Theses & Dissertations (2009 - 2024)
The statistical dynamical diffraction theory, which has been initially developed by late Kato remained in obscurity for many years due to intense and difficult mathematical treatment that proved to be quite challenging to implement and apply. With assistance of many authors in past (including Bushuev, Pavlov, Pungeov, and among the others), it became possible to implement this unique x-ray diffraction theory that combines the kinematical (ideally imperfect) and dynamical (the characteristically perfect diffraction) into a single system of equations controlled by two factors determined by long range order and correlation function within the structure. The first stage is completed by …
Generality In Nanotechnologies And Its Relationship To Economic Performance, Fernando Gomez Baquero
Generality In Nanotechnologies And Its Relationship To Economic Performance, Fernando Gomez Baquero
Legacy Theses & Dissertations (2009 - 2024)
In the history if economic analysis there is perhaps no more important question than the one of how economic development is achieved. For more than a century, economists have explored the role of technology in economic growth but there is still much to be learned about the effect that technologies, in particular emerging ones, have on economic growth and productivity. The objective of this research is to understand the relationship between nanotechnologies and economic growth and productivity, using the theory of General Purpose Technology (GPT)-driven economic growth. To do so, the Generality Index (calculated from patent data) was used to …
Development Of Iii-V P-Mosfets With High-Kappa Gate Stack For Future Cmos Applications, Padmaja Nagaiah
Development Of Iii-V P-Mosfets With High-Kappa Gate Stack For Future Cmos Applications, Padmaja Nagaiah
Legacy Theses & Dissertations (2009 - 2024)
As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport …
Al/Cuxo/Cu Memristive Devices : Fabrication, Characterization, And Modeling, Nathan Mcdonald
Al/Cuxo/Cu Memristive Devices : Fabrication, Characterization, And Modeling, Nathan Mcdonald
Legacy Theses & Dissertations (2009 - 2024)
Memristive devices have become very popular in recent years due to their potential to dramatically alter logic processing in CMOS circuitry. Memristive devices function as electrical potentiometers, allowing for such diverse applications as memory storage, multi-state logic, and reconfigurable logic gates.
Graphene-Based Post-Cmos Architecture, Sansiri Tanachutiwat
Graphene-Based Post-Cmos Architecture, Sansiri Tanachutiwat
Legacy Theses & Dissertations (2009 - 2024)
The semiconductor industry relies on CMOS technology which is nearing its scaling limitations. In order to continue the historical growth rate of the device density of digital logic chips, novel nanomaterials and nanodevices will need to be developed.
Virus Capsids As Nanoscale Delivery Vessels Of Photoactive Compounds For Site-Specific Photodynamic Therapy, Brian Alexander Cohen
Virus Capsids As Nanoscale Delivery Vessels Of Photoactive Compounds For Site-Specific Photodynamic Therapy, Brian Alexander Cohen
Legacy Theses & Dissertations (2009 - 2024)
The research presented in this work details the use of a viral capsid as an addressable delivery vessel of photoactive compounds for use in photodynamic therapy. Photodynamic therapy is a treatment that involves the interaction of light with a photosensitizing molecule to create singlet oxygen, a reactive oxygen species. Overproduction of singlet oxygen in cells can cause oxidative damage leading to cytotoxicity and eventually cell death. Challenges with the current generation of FDA-approved photosensitizers for photodynamic therapy primarily stem from their lack of tissue specificity. This work describes the packaging of photoactive cationic porphyrins inside the MS2 bacteriophage capsid, followed …
Micropatterned Electrospun Nanofibrous Substrates As Scaffolds For Engineered Salivary Glands, David Alexander Soscia
Micropatterned Electrospun Nanofibrous Substrates As Scaffolds For Engineered Salivary Glands, David Alexander Soscia
Legacy Theses & Dissertations (2009 - 2024)
The salivary gland is a complex organ exhibiting a branching, 3-dimensional structure made up of acinar (saliva-producing), and ductal (saliva transporting and modifying) epithelial cells. The high surface area of the gland allows it to efficiently provide the mouth with saliva, maintaining oral cleanliness and comfort. Salivary gland hypofunction, a significant clinical problem often caused by the autoimmune disease Sjögren's syndrome or head and neck radiation for cancer patients, affects millions of Americans and is characterized by a loss of function of salivary gland acinar cells. Chronic xerostomia, or dry mouth, arises as a result of salivary gland hypofunction and …
Measurement Of Electron Spin Transport In Graphene On 6h-Silicon Carbide(0001), Joseph Abel
Measurement Of Electron Spin Transport In Graphene On 6h-Silicon Carbide(0001), Joseph Abel
Legacy Theses & Dissertations (2009 - 2024)
The focus of this thesis is to demonstrate the potential of wafer scale graphene spintronics. Graphene is a single atomic layer of sp2-bonded carbon atoms that has high carrier mobilities, making it a desirable material for future nanoscale electronic devices. The vision of spintronics is to utilize the spin of the electron to produce novel high-speed low power consuming devices. Materials with long spin relaxation times and spin diffusion lengths are needed to realize these goals. Graphene is an ideal material as it meets these requirements and is amenable to planar device geometries.
Evaluation Of Chemical Mechanical Planarization (Cmp) For The Removal Of Surface Defects In Extreme Ultraviolet Lithography (Euvl) Mask Substrates, Bradley Halligan Wood
Evaluation Of Chemical Mechanical Planarization (Cmp) For The Removal Of Surface Defects In Extreme Ultraviolet Lithography (Euvl) Mask Substrates, Bradley Halligan Wood
Legacy Theses & Dissertations (2009 - 2024)
A modified CMP process was investigated and developed with the goal of removing surface defects (nanoscale depressions or `pits') from quartz mask blank substrates. Initially, quartz glass wafers were evaluated to observe surface roughness and defect introduction due to low down-force CMP processing. Following analysis of quartz glass wafers subjected to such processing it was determined that a CMP-based processing for pit removal of maskblank substrates was potentially viable. Consequently, a specially-designed mask carrier for investigating and developing CMP-based defect removal from EUV maskblank substrates was mounted on a Strasbaugh 6DS-SP CMP laboratory tool. A series of experiments was performed …
Development Of A Gas-Based Spectral Filter For Carbon Dioxide Laser Produced Plasma Extreme Ultraviolet Sources, Chimaobi Mbanaso
Development Of A Gas-Based Spectral Filter For Carbon Dioxide Laser Produced Plasma Extreme Ultraviolet Sources, Chimaobi Mbanaso
Legacy Theses & Dissertations (2009 - 2024)
Currently, extreme ultraviolet (EUV) lithography is a promising next generation lithography technique for enabling the scaling of device features beyond 22 nm. Out-of-band radiation in EUV exposure tools remains one of the critical issues that must be addressed before the implementation of this lithography technique for high volume manufacturing. Laser produced plasmas which use a carbon dioxide (CO2) drive laser pulse are more likely to be used to generate EUV radiation because of their scalability to higher source power. The out-of-band spectrum at the intermediate focus of EUV sources that use a CO2 laser produced plasma is …
Development Of An Industrial Fabrication Process For Next Generation, Thinner And Larger Crystalline Silicon (C-Si) Wafer-Based Solar Cells, Anh Viet Nguyen
Development Of An Industrial Fabrication Process For Next Generation, Thinner And Larger Crystalline Silicon (C-Si) Wafer-Based Solar Cells, Anh Viet Nguyen
Legacy Theses & Dissertations (2009 - 2024)
The world's solar cell production has grown rapidly and steadily with an annual average of 30% over the last two decades. Single and micro-crystalline silicon solar cells have been the major reason for this production increase. In 2009, silicon-based solar cells comprised almost 90% of worldwide photovoltaic module shipments.
Experimental And Theoretical Analysis Of Strain Engineered Aluminium Nitride On Silicon For High Quality Aluminium(X)Indium(Y)Gallium(1-X-Y)Nitride Epitaxy, Mihir Hemant Tungare
Experimental And Theoretical Analysis Of Strain Engineered Aluminium Nitride On Silicon For High Quality Aluminium(X)Indium(Y)Gallium(1-X-Y)Nitride Epitaxy, Mihir Hemant Tungare
Legacy Theses & Dissertations (2009 - 2024)
III-Nitrides on Si are of great technological importance due to the availability of large area, epi ready Si substrates and the ability to heterointegrate with mature silicon micro and nanoelectronics. The major roadblock with realizing this is the large difference in thermal expansion coefficients and lattice constants between the two material systems. A novel technique developed in our research lab shows the potential of simultaneous and substantial reduction in dislocation and crack density in GaN on Si (111). Research undertaken in the current doctoral dissertation, validates the superior GaN quality on Si obtained using our technique and determines the factors …
(In, Al) Co-Doped Zinc Oxide As A Novel Material System For Quantum-Well Multilayer Thermoelectrics, Sean C. Teehan
(In, Al) Co-Doped Zinc Oxide As A Novel Material System For Quantum-Well Multilayer Thermoelectrics, Sean C. Teehan
Legacy Theses & Dissertations (2009 - 2024)
Waste heat recovery from low efficiency industrial processes requires high performance thermoelectric materials to meet challenging requirements. The efficiency such a device is quantified by the dimensionless figure of merit ZT=S2σT/қ, where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature and қ is the thermal conductivity. For practical applications these devices are only cost-effective if the ZT is higher than 2.
The Influence Of Copper Substrate Orientation On Graphene Growth, Zachary Robert Robinson
The Influence Of Copper Substrate Orientation On Graphene Growth, Zachary Robert Robinson
Legacy Theses & Dissertations (2009 - 2024)
This dissertation is focused on determining the influence of the copper substrate on graphene grown by \ac{CVD}. Graphene, which can be grown in single atomic layers on copper substrates, has potential applications in future electronic devices. One of the key issues for the use of graphene grown by chemical vapor deposition for device applications is the influence of defects on the transport properties of the graphene. For instance, growth on metal foil substrates results in multi-domain graphene growth because the foil substrates themselves have a variety of different surface terminations. Therefore, they don't serve as a very good template for …
Molecular Vapor Deposition Of Organosilanes, Sarah Kirsten Goulet
Molecular Vapor Deposition Of Organosilanes, Sarah Kirsten Goulet
Legacy Theses & Dissertations (2009 - 2024)
Current strategies for low temperature bonding (<300 C) and 3D integration employ polymer interfaces (1-3 um) with low thermal conductivity which can result in poor heat transfer between bonded elements. The introduction of thinner interfaces to improve heat transfer is desirable; however, deposition of thin polymer films (<100 nm) for bonding applications can lead to reduced film uniformity and negatively affect bonding strength. Self-assembled monolayer (SAM) chemistries provide a potential solution and can yield nanometer control of the interfacial layer thickness without a significant effect on surface roughness. Siloxanes are one available option to realize these nanometer thin reactive layers. Due to their propensity to crosslink and form multilayers, careful control of the reaction conditions is required. Considering this, we have evaluated the molecular vapor deposition of siloxane precursors to generate molecular layers with reactive end-groups for potential use in bonding applications. Film stability, morphology, thickness, and composition were monitored after deposition using atomic force microscopy, ellipsometry and x-ray photoelectron spectroscopy.
A Novel Fabrication Technique For Three-Dimensional Nanostructures, Ravi Kiran Bonam
A Novel Fabrication Technique For Three-Dimensional Nanostructures, Ravi Kiran Bonam
Legacy Theses & Dissertations (2009 - 2024)
Three dimensional micro- and nano-structures are commonly used in the field of Photonics, Optoelectronics, Sensors and Biological applications. Although numerous physical models are developed, a major challenge has been in their fabrication which is commonly limited to conventional layer-by-layer techniques. In this dissertation, a novel method for fabricating three dimensional structures using Electron Beam Lithography (EBL) will be presented.
The Development And Simulation Of Piezoelectric Surface Acoustic Wave Devices For Euv Mask Particle Removal, Anthony Rae Davis
The Development And Simulation Of Piezoelectric Surface Acoustic Wave Devices For Euv Mask Particle Removal, Anthony Rae Davis
Legacy Theses & Dissertations (2009 - 2024)
Extreme Ultraviolet Lithography (EUVL) is a critical semiconductor fabrication process which uses 13.5 nanometer wavelength light reflected from a mask to print features on various wafers used for IC fabrication. An extensive amount of research is currently underway to make EUVL prevalent in efforts to allow for efficient sub-22 nm feature size fabrication. A number of challenges must be overcome before EUVL usage becomes feasible in terms of cost, wafer output, reliability, and throughput. One notable challenge in EUVL is the removal of mask contamination. EUV masks are required to be free of contamination to ensure precise feature printing. Particles …
Study Of The Dielectric Function Of Graphene From Spectroscopic Ellipsometry And Electron Energy Loss Spectroscopy, Florence Joan Nelson
Study Of The Dielectric Function Of Graphene From Spectroscopic Ellipsometry And Electron Energy Loss Spectroscopy, Florence Joan Nelson
Legacy Theses & Dissertations (2009 - 2024)
For more than 60 years, semiconductor research has been advancing up the periodic table. The first transistor was made from germanium. This later gave way to silicon-based devices due to the latter's ability to form an excellent interface with thermally-grown oxide. Now for the last ~8 years, the focus has moved up one more row to carbon for post-CMOS devices in order to comply with the scaling limitations of Moore's law. However, for each of these, the measurements of film properties and dimensions have always been required for technological applications. These measurement methods often incorporate the use of light or …
Materials Engineering For Near-Infrared Light Emission From Silicon Compatible Mos Structures, Himani Suhag Kamineni
Materials Engineering For Near-Infrared Light Emission From Silicon Compatible Mos Structures, Himani Suhag Kamineni
Legacy Theses & Dissertations (2009 - 2024)
Silicon-based photonics requires several components, such as a light source, an amplifier/waveguide to transfer the signal, and a photodetector to detect the signal. The motivation for using these silicon-based technologies in photonics applications is two-fold: economic advantages offered by the compatibility with mature silicon IC manufacturing and its excellent material properties for photonic devices (high thermal conductivity, high optical damage threshold, etc.). One of the major challenges in the realization of this technology is the Si-based light source. Because of its indirect bandgap, silicon has very inefficient band-to-band radiative electron-hole recombination. To overcome this obstacle, tremendous research efforts have been …
Investigation Of Titanium Nitride As Catalyst Support Material And Development Of Durable Electrocatalysts For Proton Exchange Membrane Fuel Cells, Bharat Avasarala
Investigation Of Titanium Nitride As Catalyst Support Material And Development Of Durable Electrocatalysts For Proton Exchange Membrane Fuel Cells, Bharat Avasarala
Legacy Theses & Dissertations (2009 - 2024)
The impending energy and climatic crisis makes it imperative for human society to seek non-fossil based alternative sources for our energy needs. Although many alternative energy technologies are currently being developed, fuel cell technology provides energy solutions, which satisfy a wide range of applications. But the current fuel cell technology is far from its target of large scale commercialization mainly because of its high cost and poor durability. Considerable work has been done in reducing the cost but its durability still needs significant improvement. Of the various materials in a PEM fuel cell, the degradation of electrocatalyst affects its durability …
Effects Of Radiation-Induced Carbon Contamination On The Printing Performance Of Extreme Ultraviolet Masks, Yu-Jen Fan
Effects Of Radiation-Induced Carbon Contamination On The Printing Performance Of Extreme Ultraviolet Masks, Yu-Jen Fan
Legacy Theses & Dissertations (2009 - 2024)
This dissertation investigates one of the remaining issues for extreme ultraviolet (EUV) lithography, the effects of radiation induced carbon contamination on the printing performance of patterned EUV masks. The impact of carbon contamination on EUV masks is significant due to the throughput loss and potential effects on imaging performance, and occurs when multilayer surfaces are exposed to EUV radiation with residual carbonaceous species present. Current carbon contamination research is primarily focused on the lifetime of the multilayer surfaces, determined by reflectivity loss and reduced throughput in EUV exposure tools. However, contamination on patterned EUV masks can cause additional effects on …
An Exploration Of Focused Electron Beam-Induced-Deposition At Cryogenic Temperatures, Matthew Bresin
An Exploration Of Focused Electron Beam-Induced-Deposition At Cryogenic Temperatures, Matthew Bresin
Legacy Theses & Dissertations (2009 - 2024)
A modified version of electron beam-induced-deposition (EBID) has been studied, where cryogenic substrates were employed to alter the growth environment. Cryogenic substrates enabled multi-layer condensed phase films, which, upon electron exposure and reheating to room temperature, exhibited several unique surface morphologies not present in traditional EBID deposits. By analyzing the composition and structure of the cryogenic deposits, along with simulation of energy deposition from exposure, a diffusion based growth mechanism has been proposed. To test the validity of the proposed model, several process variables were investigated including electron flux, electron fluence, condensate thickness and precursor type. Using the knowledge garnered …
A New Method For The Removal Of Parasitic Capacitances From Sub-100nm Mosfets Using Low-Noise Split Capacitance-Voltage Measurements, Daniel R. Steinke
A New Method For The Removal Of Parasitic Capacitances From Sub-100nm Mosfets Using Low-Noise Split Capacitance-Voltage Measurements, Daniel R. Steinke
Legacy Theses & Dissertations (2009 - 2024)
The physical shape of MOSFETs and the processing involved in their fabrication give rise to parasitic capacitances. These capacitances are typically small compared to the intrinsic channel capacitance of the device, but as MOSFETs scale into the sub-100nm gate length range, the parasitic capacitances become a significant percentage of the overall measured capacitance, resulting in a source of error in the analysis of these devices. The purpose of this work is to describe these parasitic capacitances and their origin in MOSFET structures and to propose a method for their removal for analysis. The experimental devices used for this work are …
Effects Of Low Energy E-Beam Irradiation On Graphene And Graphene Field Effect Transistors And Raman Metrology Of Graphene On Split Gate Test Structures, Gayathri Rao
Legacy Theses & Dissertations (2009 - 2024)
Apart from its compelling performance in conventional nanoelectronic device geometries, graphene is an appropriate candidate to study certain interesting phenomenon (e.g. the Veselago lens effect) predicted on the basis of its linear electron dispersion relation. A key requirement for the observation of such phenomenon in graphene and for its use in conventional field-effect transistor (FET) devices is the need to minimize defects such as consisting of - or resulting from - adsorbates and lattice non-uniformities, and reduce deleterious substrate effects. Consequently the investigation of the origin and interaction of defects in the graphene lattice is essential to improve and tailor …
The Formation And Distribution Of Hippocampal Synapses On Patterned Neuronal Networks, Natalie Michelle Dowell-Mesfin
The Formation And Distribution Of Hippocampal Synapses On Patterned Neuronal Networks, Natalie Michelle Dowell-Mesfin
Legacy Theses & Dissertations (2009 - 2024)
ABSTRACT
Synthesis, Processing And Characterization Of Silicon-Based Templated Nanowires, Jae Ho Lee
Synthesis, Processing And Characterization Of Silicon-Based Templated Nanowires, Jae Ho Lee
Legacy Theses & Dissertations (2009 - 2024)
Semiconductor and metallic nanowires have attracted substantial attention due to their wide variety of applications, ranging from nanoelectronics to energy storage devices. In particular, self-assembled silicon nanowires (SiNWs) may be an attractive alternative to conventionally processed planar silicon since SiNWs can potentially function as both the switch (i.e. transistor) and local interconnect (e.g. metal silicide nanowire) to form an inherently integrated nanoelectronic system. Also, hierarchical (branched) nanowire systems hold potential for catalysts or porous electrode applications for energy applications
High-K Gate Stack On Compound Semiconductor Channel Materials For Low Power, High Performance Digital Logic Applications, Rama Kambhampati
High-K Gate Stack On Compound Semiconductor Channel Materials For Low Power, High Performance Digital Logic Applications, Rama Kambhampati
Legacy Theses & Dissertations (2009 - 2024)
Group III-V compound semiconductors such as InGaAs and InGaSb are actively being considered as channel materials for low power, high performance digital logic applications due to superior carrier transport properties such as mobility and saturation velocity. The high density of interface states at high-k dielectric and III-V interface that results in pinning of Fermi level is one of the major challenges that need to be addressed before III-V CMOS becomes a mainstream technology.
Cost-Effective Imprint Template Fabrication For Step And Flash Imprint Lithography, Adam Marc Munder
Cost-Effective Imprint Template Fabrication For Step And Flash Imprint Lithography, Adam Marc Munder
Legacy Theses & Dissertations (2009 - 2024)
The College of Nanoscale Science and Engineering (CNSE) is studying imprint template fabrication with the 100kV Vistec VB300 Gaussian E-Beam writer. The major goal is to develop and advance imprint template fabrication technology using low cost quartz wafers for proof-of-concept demonstrations.