Semiconductor and Optical Materials Commons^™

Designing Enhanced Nonlinearity In Plasmonic Devices With Epsilon-Near-Zero Films, Kevin Tran Le

Electrical Engineering and Computer Science (MS) Theses

The growing demand for energy-efficient optical information processing motivates compact nonlinear photonic devices that can operate at low power. Silicon photonics is a mature platform for linear optical functions, but nonlinear operation remains challenging because of its weak Kerr response, two-photon absorption at telecommunication wavelengths, and limited compatibility with deeply subwavelength plasmonic confinement. This thesis computationally investigates epsilon-near-zero thin films integrated into plasmonic waveguide architectures as a route toward stronger light–matter interaction in compact nonlinear devices.

Two waveguide geometries are examined: a hybrid metal-insulator-metal plasmonic slab waveguide incorporating an ultrathin indium tin oxide epsilon-near-zero layer (5–50 nm), and a dielectric-loaded …

Effect Of Niobium Dopant On Zno Thin Films Prepared Via The Sol–Gel Spin Coating Method, Kevin Alvin Eswar, Nur Fairuz Rostan, Maryam Mohamad, Rabiatuladawiyah Md Akhir, Rosfayanti Rasmidi, Muliyadi Guliling, Najwa Ezira Azhar, Irmaizatussyehdany Buniyamin, Mohd Firdaus Malek, Mohamad Rusop Mahmood, Husairi Fadzilah Suhaimi, Saifollah Abdullah

Makara Journal of Science

Thin films of zinc oxide (ZnO) and niobium (Nb)-doped ZnO were deposited on a glass substrate using the sol–gel spin coating method. Diethanolamine, isopropyl alcohol, and zinc acetate served as the stabilizers, solvent, and starting ma-terial, respectively. Niobium pentachloride was employed as the dopant source. Energy-dispersive X-ray analysis con-firmed Nb incorporation. Field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), and ultravio-let–visible spectroscopy (UV–Vis) analyses characterized the morphology, structure, and optics of the films, respective-ly. Both films, comprising nanoparticles, were visible in FESEM. Nb doping reduced the particle size from 44.2 nm to 35.8 nm. The XRD peaks at 31.23°, …

Effect Of Fabrication Parameters On The Ferroelectricity Of Hafnium Zirconium Oxide Films: A Statistical Study, Guillermo A. Salcedo, Ahmad E. Islam, Elizabeth Reichley, Michael Dietz, Christine M. Schubert Kabban, Kevin D. Leedy, Tyson C. Back, Weison Wang, Andrew Green, Timothy S. Wolfe, James M. Sattler

Faculty Publications

Ferroelectricity in hafnium zirconium oxide (Hf_1−xZr_xO₂) and the factors that impact it have been a popular research topic since its discovery in 2011. Although the general trends are known, the interactions between fabrication parameters and their effect on the ferroelectricity of Hf_1−xZr_xO₂ require further investigation. In this paper, we present a statistical study and a model that relates Zr concentration (x), film thickness (t_f), and annealing temperature (T_a) with the remanent polarization (P_r) in tungsten (W)-capped Hf_1−xZr_xO₂. …

Understanding The Role Thin Film Interfaces Play In Solar Cell Performance And Stability, Mirra M. Rasmussen, Laura S. Bruckman, Ina T. Martin

Student Scholarship

As more efficient and cost-effective photovoltaic (PV) architectures are developed, solar becomes an ever more competitive and viable replacement for fossil fuels. Full grid electrification necessitates the development of efficient, reliable, cost-effective technologies - and there is room for many different kinds of PV in this expanding market. The practical challenges and constraints of terawatt PV production have brought scalability and durability into sharp scientific focus. From a materials perspective, there are commonalities in the materials questions and challenges across different PV technologies. Whereas most PV technology is referred to by the absorber layer - e.g. silicon, or perovskite solar …

Simulation And Fabrication Of All Oxide-Based Ito/Tio2/Cuo/Au Heterostructure For Solar Cell Applications, Sajal Islam

Graduate Theses/Dissertations

Oxide heterostructures have drawn great attention lately, due to their environment-friendly properties and potential applications in optoelectronic devices. In this work, a simulation study of a heterojunction solar cell was performed with SCAPS (a solar cell simulator) using TiO2 as an n-type and CuO as a p-type layer. The thickness and the dopant-dependent simulations have shown that the solar cell operates at a maximum efficiency of 19.2% when the thickness of the TiO2/CuO layers is chosen 1.4µm/1.2µm compared to the 11.5% efficiency when FTO is replaced with ITO. An indium-doped tin oxide (ITO) vs fluorine-doped tin oxide (FTO) comparison study …

Pulsed Laser Annealing On The Optoelectronic Properties Of Zno Thin Films, Md Abu Zobair

Graduate Theses/Dissertations

ZnO thin films have attracted great attention recently due to their unique electronic and optical properties. However, for proper implementation of ZnO in electronic devices it is necessary to understand the role of native point defects present inside the material as these wide bandgap semiconductors are inherently n-type due to oxygen vacancies. The objective is to control the electronic and optical properties of ZnO thin films through pulsed laser annealing (PLA). Thin films of ZnO have been grown on different substrates using pulsed laser deposition. Then PLA of the films are done by changing laser parameters (energy, frequency, pulse width, …

Perovskite Film Formation For Solar Cell Absorbers: Effects Of Substrate Modification, Mirra M. Rasmussen, Kyle M. Crowley, Ina T. Martin

Student Scholarship

As perovskite solar cell efficiencies have risen rapidly, practical constraints have made durability a critical concern. Whereas much attention has been paid to the development of the perovskite absorber layer, the charge transport layers can also be engineered to better the performance and stability of the device. This work uses the molecular modifier bromopropyltrimethoxysilane (BPTMS) to alter the interface between indium tin oxide (ITO, a common thin film solar cell transparent electrode) and methylammonium lead iodide (MAPbI3, a common perovskite absorber) to improve the morphology and stability of the perovskite absorber film. The substrate, molecular modifier, and perovskite film were …

Decoupling The Effects Of Interfacial Chemistry And Grain Size In Perovskite Stability, Mirra M. Rasmussen, Kyle M. Crowley, Miranda S. Gottlieb, Geneviève Sauvé, Ina T. Martin

Student Scholarship

No abstract provided.

Perovskite Thin Films Annealed In Supercritical Fluids For Efficient Solar Cells, Gilbert Annohene

Theses and Dissertations

In the field of photovoltaics, scientists and researchers are working fervently to produce a combination of efficient, stable, low cost and scalable devices. Methylammonium lead trihalide perovskite has attracted intense interest due to its high photovoltaic performance, low cost, and ease of manufacture. Their high absorption coefficient, tunable bandgap, low-temperature processing, and abundant elemental constituent provide innumerable advantages over other thin film absorber materials. Since the perovskite film is the most important in the device, morphology, crystallization, compositional and interface engineering have been explored to boost its performance and stability. High temperatures necessary for crystallization of organic-inorganic hybrid perovskite films …

Artificial Neural Network Discovery Of A Switchable Metasurface Reflector, J. R. Thompson, J. A. Burrow, P. J. Shah, Jonathan E. Slagle, E. S. Harper, A. Van Rynbach, I. Agha, M. S. Mills

Student Publications

Optical materials engineered to dynamically and selectively manipulate electromagnetic waves are essential to the future of modern optical systems. In this paper, we simulate various metasurface configurations consisting of periodic 1D bars or 2D pillars made of the ternary phase change material Ge2Sb2Te5 (GST). Dynamic switching behavior in reflectance is exploited due to a drastic refractive index change between the crystalline and amorphous states of GST. Selectivity in the reflection and transmission spectra is manipulated by tailoring the geometrical parameters of the metasurface. Due to the immense number of possible metasurface configurations, we train deep neural networks capable of exploring …

Fabrication Of Nanoscale Columnar Diodes By Glancing Angle Deposition, Jacob D. Weightman

Macalester Journal of Physics and Astronomy

Glancing angle deposition (GLAD) is a process in which thin films are deposited onto a substrate with obliquely incident vapor together with precisely controlled azimuthal substrate rotation. Ballistic shadowing effects due to the oblique incidence produce nanoscale structures, and a variety of feature shapes, including tilted columns, helices, and vertical columns can be achieved by varying the azimuthal rotation during the deposition process. Due to this control of morphology and the compatibility of the process with a wide variety of materials, GLAD films have found applications in a variety of fields including sensing, photonics, photovoltaics, and catalysis, where they are …

Nonlinearities And Carrier Dynamics In Refractory Plasmonic Tin Thin Films, Heather George, Jennifer Reed, Manuel R. Ferdinandus, Clayton Devault, Alexei Lagutchev, Augustine Urbas, Theodore B. Norris, Vladimir M. Shalaev, Alexandra Boltasseva, Nathaniel Kinsey

Faculty Publications

Titanium nitride is widely used in plasmonic applications, due to its robustness and optical properties which resemble those of gold. Despite this interest, the nonlinear properties have only recently begun to be investigated. In this work, beam deflection and non-degenerate femtosecond pump-probe spectroscopy (800 nm pump and 650 nm probe) were used to measure the real and imaginary transient nonlinear response of 30-nm-thick TiN films on sapphire and fused silica in the metallic region governed by Fermi-smearing nonlinearities. In contrast to other metals, it is found that TiN exhibits non-instantaneous positive refraction and reverse saturable absorption whose relaxation is dominated …

Polarization Of Bi2te3 Thin Film In A Floating-Gate Capacitor Structure, Hui Yuan, Kai Zhang, Haitao Li, Hao Zhu, John E. Bonevich, Helmut Baumgart, Curt A. Richter, Qiliang Li

Electrical & Computer Engineering Faculty Publications

Metal-Oxide-Semiconductor (MOS) capacitors with Bi₂Te₃ thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi₂Te₃ thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33 eV for separating the electron and hole pairs in the bulk of Bi₂Te₃, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent …

Self-Assembly Of Ge Quantum Dots On Si(100)- 2×1 By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Self-assembled Ge quantum dots are grown on Si(100)- 2×1 by pulsed laser deposition. The growth is studied by in situ reflection high-energy electron diffraction and postdeposition atomic force microscopy. After the completion of the wetting layer, transient hut clusters, faceted by different planes, are observed. When the height of these clusters exceeded a certain value, the facets developed into {305} planes. Some of these huts become {305}-faceted pyramids as the film mean thickness was increased. With further thickness increase, dome clusters developed on the expense of these pyramids. © 2005 American Institute of Physics. [DOI: 10.1063/1.1949285]

Growth Dependant Properties Of Undoped And In-Situ Doped Chemically Deposited Cds Thin Films, Aaron John Reynolds

Theses : Honours

This research project examines the growth dependant properties and composition of Cadmium Sulfide thin films produced by the Chemical Bath Deposition Method. The specific areas investigated are the effect of deposition temperature, the effect of an Indium dopant on the films structure and properties, and the effects of post deposition processing such as annealing in air on the film composition. The chemical bath deposition apparatus used has been refined and tested to ensure that the films were grown in a more efficient manner than previously, with more control of the influencing deposition parameters such as temperature. Films grown by the …

Optical And Electrical Properties Of Cualse² Thin Films Obtained By Selenization Of Cu/Al/Cu... Al/Cu Layers Sequentially Deposited, J. C. Bernède, S. Marsillac, C. El Moctar, A. Conan

Electrical & Computer Engineering Faculty Publications

Optical and electrical properties of CuAlSe₂ thin films obtained by selenization of Cu/Al/Cu...Al/Cu layers sequentially deposited have been investigated. It is shown that the expected energy gap (2.67 eV) is measured for well crystallized films, whereas a slightly higher value is measured for films not so well crystallized. Raman diffusion also shows differences between well and poorly crystallized films with peaks corresponding to the reference powder for the former samples. A p-type conductivity is found whatever the crystalline quality of the samples. The conductivity of the films depends also strongly on their crystalline properties. When the films are badly …

Cualse² Thin Films Obtained By Chalcogenization, S. Marsillac, K. Benchouk, C. El Moctar, J. C. Bernède, J. Pouzet, A Khellil, M. Jamali

Electrical & Computer Engineering Faculty Publications

CuAlSe₂ thin films have been synthesized by chalcogenization of thin Cu and Al layers sequentially deposited by evaporation under vacuum. It is shown that CuAlSe₂ films are obtained with some Cu₂-_δSe and Se phases present at the surface. These surface phases are suppressed by annealing under vacuum and by chemical etching in a KCN solution. At the end of the process, the XRD spectrum demonstrates that textured CuAlSe₂ films have been obtained with preferential orientation of the crystallites along the (112) direction. The gap of the films is 2.7 eV as expected. The …

Design Of Gradient Index Optical Thin Films, Jeffrey J. Druessel

Theses and Dissertations

Gradient index thin films provide greater flexibility for the design of optical coatings than the more conventional 'layer' films. In addition, gradient index films have higher damage thresholds and better adhesion properties. This dissertation presents an enhancement to the existing inverse Fourier transform gradient index design method, and develops a new optimal design method for gradient index films using a generalized Fourier series approach. The inverse Fourier transform method is modified to include use of the phase of the index profile as a variable in rugate filter design. Use of an optimal phase function in Fourier-based filter designs reduces the …

Design And Performance Evaluation Of A Gas Chromatograph Micromachined In A Single Crystal Silicon Substrate, Rocky R. Reston

Theses and Dissertations

This investigation designed and developed a miniature gas chromatograph (GC) using silicon micromachining techniques. The GC is composed of a miniature sample injector (10 µl sample loop); a 0.9 m long, rectangular-shaped (300 µm width and 10 micrometers height) capillary column coated with a 0.2 µm thick copper phthalocyanine (CuPc) stationary phase; and a dual-detector scheme incorporating a CuPc-coated chemiresistor and a 125 µm diameter thermal conductivity detector bead. Micromachining was employed to fabricate the sample injector interface, the GC column, and the dual-detector cavity. A novel processing technique was developed to sublime the CuPc stationary phase coating on the …