Semiconductor and Optical Materials Commons^™

Studies Of Initial Growth Of Gan On Inn, Alaa Alnami

Graduate Theses and Dissertations

III-nitride materials have recently attracted much attention for applications in both the microelectronics and optoelectronics. For optoelectronic devices, III-nitride materials with tunable energy band gaps can be used as the active region of devices to enhance the absorption or emission. A such material is indium nitride (InN), which along with gallium nitride (GaN) and aluminum nitride (AlN) embody the very real promise of forming the basis of a broad spectrum, a high efficiency solar cell. One of the remaining complications in incorporating InN into a solar cell design is the effects of the high temperature growth of the GaN crystal …

Triple-Junction Solar Cells : In Parallel., Levi C Mays

Electronic Theses and Dissertations

This paper looks into the current inefficiency of solar cells and attempts a few alternative solar cell structures in order to provide a more effective source of renewable energy. Currently, multi-junction solar cells are being developed to capture the sun’s light more efficiently. One of the ideas in this paper is to add a window to see if the addition of such a layer into a junction will increase the voltage while maintaining nearly the same current output. Central to this paper is the rearranging of the conducting layers of the multi-junction cell so that the junctions can be connected …

Wide Bandgap Organo‐Lead Trihalide Perovskites For Solar Cells, Miao Hu

Department of Mechanical and Materials Engineering: Dissertations, Theses, and Student Research

Methylammonium lead trihalide perovskite (MAPbX3, where MA is methylammonium, and X is a halide)-based solar cells have been extensively investigated recently, with a demonstrated and certified solar power conversion efficiency (PCE) exceeding 20%. To further boost the PCE beyond the Schockley–Queisser limit, tandem structured solar cells have been investigated based on integrating MAPbX3 and the lower bandgap solar cells. Although the best reported efficiency for this type of tandem cells is not close to the theoretically achievable value, mixed-halide perovskite MAPbBrxI3–x is still one of the most promising candidates as the wide-bandgap light absorber for the tandem application to match …

Synthesis Of Titania Thin Films With Controlled Mesopore Orientation: Nanostructure For Energy Conversion And Storage, Suraj R. Nagpure

Theses and Dissertations--Chemical and Materials Engineering

This dissertation addresses the synthesis mechanism of mesoporous titania thin films with 2D Hexagonal Close Packed (HCP) cylindrical nanopores by an evaporation-induced self-assembly (EISA) method with Pluronic surfactants P123 and F127 as structure directing agents, and their applications in photovoltaics and lithium ion batteries. To provide orthogonal alignment of the pores, surface modification of substrates with crosslinked surfactant has been used to provide a chemically neutral surface. GISAXS studies show not only that aging at 4°C facilitates ordered mesostructure development, but also that aging at this temperature helps to provide orthogonal orientation of the cylindrical micelles which assemble into an …

Molecular Helices As Electron Acceptors In High-Performance Bulk Heterojunction Solar Cells, Yu Zhong, M. Tuan Trinh, Rongsheng Chen, Geoffrey E. Purdum, Petr P. Khlyabich, Melda Sezen, Seokjoon Oh, Haiming Zhu, Brandon Fowler, Boyuan Zhang, Wei Wang, Chang-Yong Nam, Matthew Y. Sfeir, Charles T. Black, Michael L. Steigerwald, Yueh-Lin Loo, Fay Ng, X.-Y. Zhu, Colin Nuckolls

Publications and Research

Despite numerous organic semiconducting materials synthesized for organic photovoltaics in the past decade, fullerenes are widely used as electron acceptors in highly efficient bulk-heterojunction solar cells. None of the non-fullerene bulk heterojunction solar cells have achieved efficiencies as high as fullerene-based solar cells. Design principles for fullerene-free acceptors remain unclear in the field. Here we report examples of helical molecular semiconductors as electron acceptors that are on par with fullerene derivatives in efficient solar cells. We achieved an 8.3% power conversion efficiency in a solar cell, which is a record high for non-fullerene bulk heterojunctions. Femtosecond transient absorption spectroscopy revealed …

Numerical Analysis And Design Optimization Of Organic Bulk Hetero-Junction Solar Cells Using The Mixed Finite Element And Arc-Length Methods, James L. Dean

Mechanical & Aerospace Engineering Theses & Dissertations

Due to the high coupling and non-linear nature of the semiconductor equations, numerical stability becomes a major problem when using a purely Newtonian numerical method in solving these equations. Presented is a robust mixed finite element formulation with application for organic solar cell devices that incorporates the arc-length predictor-corrector method to bypass such stability issues. The simulated device represents a multilayered solar cell using organic bulk hetero-junction materials including donor materials Poly[2,1,3-benzothiadiazole-4,7-diyl[4,4-bis(2-ethylhexyl)-4H-cyclopenta[2,1-b:3,4- b']dithiophene-2,6-diyl]] (PCPDTBT) and poly 3-hexylthiophene (P3HT) with acceptor fullerene materials [6,6]-phenyl C61 butyric acid methyl ester (PC61BM) or [6,6]-phenyl C71 butyric acid methyl ester (PC71BM) as the photoactive …

Fundamental Properties Of Functional Zinc Oxide Nanowires Obtained By Electrochemical Method And Their Device Applications, Athavan Nadarajah

Dissertations and Theses

We report on the fundamental properties and device applications of semiconductor nanoparticles. ZnO nanowires and CdSe quantum dots were used, prepared, characterized, and assembled into novel light-emitting diodes and solar cells. ZnO nanowire films were grown electrochemically using aqueous soluble chloride-based electrolytes as precursors at temperatures below 90° C. Dopants were added to the electrolyte in the form of chloride compounds, which are AlCl₃, CoCl₂, CuCl₂, and MnCl₂. The optical, magnetic, and structural properties of undoped and transition-metal-ion doped ZnO nanowires were explored. Our results indicate that the as-grown nanowire structures have …

Photodetectors And Photovoltaic Devices Based On Semiconductor Nanomaterials, Jiang Wu

Graduate Theses and Dissertations

Photodetectors based various nanostructures and plasmon enhanced solar cells are investigated in this dissertation. The motivation of the dissertation rise is driven by urgent need of both high efficiency photodetectors and solar cells.

First, quantum dot infrared photodetectors have been intensely investigated due to their promise in high performance photodetectors. However, the strain-driven growth of quantum dots has hindered the progress of quantum dot photodetectors. The presence of strain in the device presents complexity in designing as well as defects. Therefore, in this project, new designs of quantum dot photodetector structures are presented to improve the control over detection wavelength. …

Thermodynamic Limit To Photonic-Plasmonic Light-Trapping In Thin Films On Metals, Eric A. Schiff

Physics - All Scholarship

We calculate the maximum optical absorptance enhancements in thin semiconductor films on metals due to structures that diffuse light and couple it to surface plasmon polaritons. The calculations can be used to estimate plasmonic effects on light-trapping in solar cells. The calculations are based on the statistical distribution of energy in the electromagnetic modes of the structure, which include surface plasmon polariton modes at the metal interface as well as the trapped waveguide modes in the film. The enhancement has the form 4n²+nλ/h (n – film refractive index, λ – optical wavelength, h …

Optical Properties Of Wide Band Gap Indium Sulphide Thin Films Obtained By Physical Vapor Deposition, N. Barreau, S. Marsillac, J. C. Bernède, T. Ben Nasrallah, S. Belgacem

Electrical & Computer Engineering Faculty Publications

Thin films of indium sulphide containing oxygen have been synthesized following a dry physical process. The constituents are deposited by thermal evaporation on glass substrates and then annealed under argon flow. Polycrystalline β-In₂S₃ containing oxygen thin films are obtained as soon as the temperature of annealing is between 623 and 723 K. In this paper, these β-In₂S₃ thin films have optically been studied. The optical band gap is direct. Its value is not dependent on the temperature of annealing. It is about 2.8 eV, which is higher than that of β-In₂S_{3 …}

The Junction Characteristics And Current Conduction Mechanisms Of Gainp2 N+P Diodes And Solar Cells, Kitt C. Reinhardt

Theses and Dissertations

This work involves an investigation of GaInP₂ n⁺p diode and solar cell dark current mechanisms, the defect centers that affect these mechanisms, and the response of dark current and solar cell photovoltaic parameters to I MeV electron irradiation and thermal annealing. Dark current due to carrier diffusion, recombination, and tunneling were identified, and recombination current was found to dominate at the maximum power-point voltage of the GaInP2 solar cells. Carrier recombination was found to occur via defect centers at the perimeter and within the bulk of the junction. Two deep majority-hole trap centers were found at E …