Semiconductor and Optical Materials Commons^™

Nanostructured Silicon Meta-Waveguides And Surfaces For Enhanced Light-Matter Interaction, Saddam Gafsi

All Dissertations

In this study, we tackle the challenge of light-matter interaction engineering and local field enhancement using various silicon photonic platforms based on three different approaches. (i) The first approach is based on boundary condition engineering where we present and show through simulation and experimental results, a silicon nanodisk “diabolo” configuration able to support significant local field enhancement levels in the range ~102 to 104 in the high index medium through proper structural modifications at the nanoscale. We show that the presented optical behavior is consistent with the anapole modes characterized by the observed near-field enhancement and coinciding with far-field suppression. …

Photon Attenuation Layer Silicon-Based X-Ray Detector: Quantum Efficiency Investigation And Algorithmic Processing Of Individual Detection Events, Kevin Larkin

ENGS 88 Honors Thesis (AB Students)

State-of-the-art X-ray detectors either use silicon direct detection—which is inefficient, as silicon is mostly transparent to high-energy X-rays—or rely on expensive scintillators to first down-convert X-ray photons to lower energies. Dr. Eldred Lee of Dartmouth College recently completed doctoral research that suggested the promise of a novel alternative: silicon-based X-ray detectors that utilize photon attenuation layers rather than scintillators. While Dr. Lee’s work is certainly rigorous and meritorious, background noise controls were rendered less effective by circumstances. The work presented in this thesis succeeded in implementing much better background noise controls for a series of new tests to compare the …

Photoluminescence From Gan Co-Doped With C And Si, Mykhailo Vorobiov

Theses and Dissertations

This thesis devoted to the experimental studies of yellow and blue luminescence (YL and BL relatively) bands in Gallium Nitride samples doped with C and Si. The band BL_C was at first observed in the steady-state photoluminescence spectrum under high excitation intensities and discerned from BL1 and BL2 bands appearing in the same region of the spectrum. Using the time-resolved photoluminescence spectrum, we were able to determine the shape of the BL_C and its position at 2.87 eV. Internal quantum efficiency of the YL band was estimated to be 90\%. The hole capture coefficient of the BL_{C …}

The Physical Behavior And Characterization Of Nanoporous Silicon And Dispenser Cathode Surfaces, Tyler Lucius Corey Maxwell

Theses and Dissertations--Chemical and Materials Engineering

Nanostructured materials have received a surge of interest in recent years since it has become apparent that reducing the size of a material often leads to heightened mechanical behavior. From a fundamental standpoint, this stems from the confinement of dislocations. Applications in microelectromechanical devices, lithium ion batteries, gas sensing and catalysis are realized by combining the improvements in mechanical behavior from material size reduction with the heightened chemical activity offered by materials with a high surface-area-to-volume ratio. In this study, films of nanoporous Si-Mg were produced through magnetron sputtering, followed by dealloying using an environmentally benign process with distilled water. …

Interstitial Silicon Ions In Rutile Tio2 Crystals, Eric M. Golden, Nancy C. Giles, Shan Yang, Larry E. Halliburton

Faculty Publications

Electron paramagnetic resonance (EPR) is used to identify a new and unique photoactive silicon-related point defect in single crystals of rutile TiO₂. The importance of this defect lies in its assignment to interstitial silicon ions and the unexpected establishment of silicon impurities as a major hole trap in TiO₂. Principal g values of this new S=1/2 center are 1.9159, 1.9377, and 1.9668 with principal axes along the [¯110],[001], and [110] directions, respectively. Hyperfine structure in the EPR spectrum shows the unpaired spin interacting equally with two Ti nuclei and unequally with two Si nuclei. These silicon …

Design And Fabrication Of Electrostatically Actuated Serpentine-Hinged Nickel-Phosphorous Micromirror Devices, Nicholas A. Wiswell

Master's Theses

A process for micromachining of micro-mirror devices from silicon-on-insulator wafers was proposed and implemented. Test methods and force applicators for these devices were developed. Following successful fabrication of these devices, a novel process for fabrication of devices out of the plane of the silicon wafer was proposed, so that the devices could be actuated electrostatically. In particular, the process makes use of thick photoresist layers as a sacrificial mold into which an amorphous nickel-phosphorous alloy may be deposited. Ideal design of the electrostatically actuated micro-mirrors was investigated, and a final design was selected and modeled using FEA software, which found …

Metal-Assisted Etching Of Silicon Molds For Electroforming, Ralu Divan, Dan Rosenthal '14, Karim Ogando, Leonidas E. Ocola, Daniel Rosenmann, Nicolaie Moldovan

Student Publications & Research

Ordered arrays of high-aspect-ratio micro/nanostructures in semiconductors stirred a huge scientific interest due to their unique one-dimensional physical morphology and the associated electrical, mechanical, chemical, optoelectronic, and thermal properties. Metal-assisted chemical etching enables fabrication of such high aspect ratio Si nanostructures with controlled diameter, shape, length, and packing density, but suffers from structure deformation and shape inconsistency due to uncontrolled migration of noble metal structures during etching. Hereby the authors prove that a Ti adhesion layer helps in stabilizing gold structures, preventing their migration on the wafer surface while not impeding the etching. Based on this finding, the authors demonstrate …

Fe, Co And Ni Adatoms Adsorbed On Silicene: A Dft Study, Kent Gang '14, Siva Gangavarapu '14, Matthew Deng '14, Glenn W. "Max" Mcgee, Ron Hurlbut, Michael Lee Dao Kang, Sean Ng Peng Nam, Harman Johll, Tok Eng Soon

Student Publications & Research

Two-dimensional materials have attracted much research attention given their intriguing properties. The latest member of this class of materials is silicene. In this work, we investigate the adsorption of Fe, Co and Ni adatoms on silicene using plane-wave density functional theory calculations within the Perdew-Burke-Ernzerhof parameterization of the generalized gradient approximation for the exchange-correlation potential. In particular, we calculate the binding energy, magnetization, and projected electronic configurations of these adatoms adsorbed at different sites on the silicene. Our calculations show that the hole site (i.e. in the centre of a hexagonal-like arrangement of Si atoms) is the most stable configuration …

Bond Strength Characterization Of Su-8 To Su-8 For Fabricating Microchannels Of An Electrokinetic Microfluidic Pump, Nash Anderson

Materials Engineering

Photosensitive negative resist polymer layers of SU-8 2050 were adhered to 100 mm n-type silicon and Pyrex wafers via spin coating. These wafers were then bonded together at various temperatures of 100 ͦC, 120 ͦC, 140 ͦC, 150 ͦC, 160 ͦC, and 180 ͦC. The target thickness of each SU-8 layer was 100 µm. Photolithography was used to create microfluidic channels within the SU-8. An n-type silicon wafer and a Pyrex wafer, each with an SU-8 layer, were brought together on the “hard bake” or final step of SU-8 polymerization. A pressure of ~300 KPa was applied during the hard …

Creating A Solar Cell Array From A Single Silicon Wafer, Samyukta Gade, Roderick Marstell

Materials Engineering

Two different processes to create multi-celled solar panels from single wafers were made and implemented. To do this, the cells must not have a common ground, and both designs use different approaches to solve this problem. One utilizes a 2.9 µm deep n-type well within a 10.74 µm deep p-type well in an n-type wafer. There are two cells in series, which has a theoretical voltage of 1 V. The cells are connected in series with 1.9 µm thick gold traces. Any area that the gold is not in contact with the silicon has a .5 µm layer silicon dioxide …

Fabrication Of Horizontal Silicon Nanowires Using A Thin Aluminum Film As A Catalyst, Khaja Hafeezuddin Mohammed

Graduate Theses and Dissertations

Silicon nanowires have been the topic of research in recent years for their significant attention from the electronics industry to grow even smaller electronic devices. The semiconductor industry is built on silicon. Silicon nanowires can be the building blocks for future nanoelectronic devices. Various techniques have also been reported in fabricating the silicon nanowires. But most of the techniques reported, grow vertical silicon nanowires. In the semiconductor industry, integrated circuits are designed and fabricated in a horizontal architecture i.e. the device layout is flat compared to the substrate. When vertical silicon nanowires are introduced in the semiconductor industry, a whole …

In-Situ Ellipsometry Characterization Of Anodically Grown Silicon Dioxide And Lithium Intercalation Into Silicon, Eric A. Montgomery

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

In this thesis, in-situ ellipsometry and electroanalytical investigations of two electrochemical processes are reported: including the formation of anodically grown silicon dioxide and the intercalation of lithium into silicon. Analysis of the ellipsometry data shows that the anodically grown silicon dioxide layer is uniform and has similar properties as thermally grown silicon dioxide. The lithium-ion intercalation data reveals non-uniform thin film formation, which requires further studies and development of appropriate ellipsometric optical models.

Advisers: Eva Schubert and Mathias Schubert

Design, Fabrication, Modeling And Characterization Of Electrostatically-Actuated Silicon Membranes, Brian C. Stahl

Master's Theses

This thesis covers the design, fabrication, modeling and characterization of electrostatically actuated silicon membranes, with applications to microelectromechanical systems (MEMS). A microfabrication process was designed to realize thin membranes etched into a silicon wafer using a wet anisotropic etching process. These flexible membranes were bonded to a rigid counterelectrode using a photo-patterned gap layer. The membranes were actuated electrostatically by applying a voltage bias across the electrode gap formed by the membrane and the counterelectrode, causing the membrane to deflect towards the counterelectrode. This deflection was characterized for a range of actuating voltages and these results were compared to the …

Band Gap Engineering Of Two Dimensional Silicon Photonic Crystals By Oxidation And Oxide Etching, Makhin Thitsa

Electrical & Computer Engineering Theses & Dissertations

In this thesis a thorough analysis is presented on the effects of oxidation and oxide etching on the band structure of two dimensional silicon photonic crystals (2 D Si PC's). By using the plane wave expansion method (PWM), two structures of triangular lattice, namely, air cylinders embedded in a silicon background and silicon cylinders embedded in an air background are modeled. The thesis focuses on triangular lattice arrangement because for certain parameter values such a lattice can give rise to absolute band gap, which prohibits the propagation of either transverse electric (TE) or transverse magnetic (TM) polarizations.

During oxidation three …

The Effect Of Oxide Layers And Boron Doping On The Breakdown Of High Purity Silicon, Brian A. Hibbeln

Theses and Dissertations

For many applications such as lasers and radar drive circuits, there exists a need for solid state high voltage, high current switches. Current gaseous discharge switches fail to satisfy the ruggedness, reliability, and lifetime requirements of today's systems. A promising alternative is the Photoconductive Semiconductor Switch (PCSS). The limiting factor in the operation of these switches is the occurrence of breakdown through channels formed slightly below the surface. A theory on the formation of these channels is presented based upon band bending at the metal-semiconductor interface, a nonhomogeneous space charge due to irregular trap distributions, and thermal runaway in localized …

Influence Of Copper Doping On The Performance Of Optically Controlled Gaas Switches, St. T. Ko, V. K. Lakdawala, K. H. Schoenbach, M. S. Mazzola

Electrical & Computer Engineering Faculty Publications

The influence of the copper concentration in silicon-doped gallium arsenide on the photoionization and photoquenching of charge carriers was studied both experimentally and theoretically. The studies indicate that the compensation ratio (N_Cu/N_Si) is an important parameter for the GaAs:Si:Cu switch systems with regard to the turn-on and turn-off performance. The optimum copper concentration for the use of GaAs:Si:Cu as an optically controlled closing and opening switch is determined.

Nanosecond Optical Quenching Of Photoconductivity In A Bulk Gaas Switch, M. S. Mazzola, K. H. Schoenbach, V. K. Lakdawala, S. T. Ko

Electrical & Computer Engineering Faculty Publications

Persistent photoconductivity in copper-compensated, silicon-doped semi-insulating gallium arsenide with a time constant as large as 30 µs has been excited by sub-band-gap laser radiation of photon energy greater than 1 eV. This photoconductivity has been quenched on a nanosecond time scale by laser radiation of photon energy less than 1 eV. The proven ability to turn the switch conductance on and off on command, and to scale the switch to high power could make this semiconductor material the basis of an optically controlled pulsed-power closing and opening switch.