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Semiconductors

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Articles 31 - 32 of 32

Full-Text Articles in Semiconductor and Optical Materials

A Stochastic Model For Crystal-Amorphous Transition In Low Temperature Molecular Beam Epitaxial Si(111), R. Venkatasubramanian, Suresh Gorantla, S. Muthuvenkatraman, Donald L. Dorsey Dec 1996

A Stochastic Model For Crystal-Amorphous Transition In Low Temperature Molecular Beam Epitaxial Si(111), R. Venkatasubramanian, Suresh Gorantla, S. Muthuvenkatraman, Donald L. Dorsey

Electrical & Computer Engineering Faculty Research

Molecular beam epitaxial Si (111) grown below a certain temperature result in amorphous structure due to the limited surface mobility of atoms in finding correct epitaxial sites. In spite of many experimental and theoretical studies, the mechanism of crystal‐amorphous transition and its dynamics related to the growth conditions are not well understood. In this article, we present a theoretical model based on the formation of stacking fault like defects as a precursor to the amorphous transition of the layer. The model is simulated based on a stochastic model approach and the results are compared to that of experiments for temperatures …


A Novel Technique For Deep Level Characterization Of High-Resistivity Semiconductor Materials, Sridhar Panigrahi Jul 1992

A Novel Technique For Deep Level Characterization Of High-Resistivity Semiconductor Materials, Sridhar Panigrahi

Electrical & Computer Engineering Theses & Dissertations

An improved photo induced current transient spectroscopy (PICTS) technique is developed for studying deep level parameters in high-resistivity semiconductor materials. A new digital data acquisition approach and improvement in the cryogenics of the system have enabled us, for the first time in our laboratory, to detect CuA level in a copper doped silicon compensated gallium arsenide (GaAs:Si:Cu) sample. The digital approach improves both the signal to noise ratio (S/N) and the efficiency of the system. Also, multiple PICTS spectra in a single thermal cycle can be obtained. In the present work, various doped and undoped gallium arsenide ( GaAs) and …