Semiconductor and Optical Materials Commons^™

Signal Modeling Of High Purity Germanium Detectors, Brooke Parker Thibodeau

Honors Scholar Theses

Pulse shape analysis can be used to analyze radiation incident on a semiconductor diode detector. Finite element analysis (FEA) can be used to simulate high purity germanium detectors with user-specified geometry, impurity concentration, and bias voltage. Subsequent streamline calculation can be used to conduct pulse shape analysis for single and multiple site gamma-ray interactions within the detector volume. Cross sections of the detector can be visualized by contour plots of the electric field, drift velocity magnitude, and collection time, as well as t30 and t90 rise-time values.

Volatile Crystalline Semiconductor Core Fibers, Thomasina Zaengle

All Dissertations

Optical fibers play critical roles across many facets of everyday life from communications to e-commerce to sensing and security. The ubiquity of optical fibers arises from their intrinsic clarity and, as glasses, their ability to be thermally drawn at high speeds over long distances when suitably heated about their glass transition temperature. Sixteen years ago, the first thermally drawn crystalline core fibers were fabricated using the molten core method, whereby a melt is confined within a glass capillary tube that is then drawn to fiber. This opened the door to crystalline semiconductor core fibers, which are now the backbone of …

Memristive Behavior And Its Applications In Different Materials., Mingyang Wu

McKelvey School of Engineering Graduate Student Theses & Dissertations

The huge amount of data calculation requires the next generation non-volatile memory (NVM) technology to have the characteristics of large storage capacity and fast read/write speed. The storage and computing are separated in the traditional von Neumann architecture-based hardware platforms. The data transport between information processing and storage are causing increasing time latency, which is called von Neumann Bottleneck. Memristor, as a basic circuit component, could combine perception, storage, and computing in a single component, which has a very wide range of application prospectives. In this paper, we investigate binary oxide memristor and 2D material memristor, including their structural design …

Angle Resolved Photoelectron Spectroscopy Study Of Germanium Tin: Experimentally Determined Electronic Band Gap And Surface Analysis, Jeremy M. Hunter

Theses and Dissertations

The germanium tin band gap is responsive to wavelengths in the mid to near infrared spectrum; this shows promise in meeting the detection demands of the next generation infrared detectors. Recent developments in germanium tin (GeSn) alloy growth techniques have peaked the scientific community’s interest in GeSn based optoelectrical and detection devices. Detection materials made entirely of group IV elements are compatible with complementary metal-oxide semiconductor manufacturing techniques. Understanding the surface chemistry of this alloy is fundamental for solid state device design and must be analyzed to optimize device performance. Studies have shown that with the addition of tin, the …

Void-Semiconductor Gaas Photonic Crystal Surface-Emitting Lasers By Epitaxial Regrowth And Single-Epitaxy Methods, Kevin James Reilly

Nanoscience and Microsystems ETDs

Monolithic semiconductor lasers including edge-emitting lasers (EELs) and vertical-cavity surface-emitting lasers (VCSELs) fail to realize simultaneous achievement of both high-power high-quality beams due to intrinsic limitations of their resonant cavity. Photonic crystal surface emitting lasers (PCSELs) address these structural limitations through employment of a two-dimensional photonic crystal (PC) cavity that creates feedback at a single wavelength for laterally scalable devices. This function of the PC allows PCSELs to power scale with area while maintaining single-mode emission required for diffraction-limited beams. In this way, PCSELs fulfill an industry demand for high-power high-quality lasing from a single chip.

Early PCSELs were fabricated …

Incorporation Of Zinc In Pre-Alloyed Cuin[Zn]S2/Zns Quantum Dots, Jean Carlos Morales Orocu

Graduate Theses and Dissertations

Since the early 2000s heavy-metal-free quantum dots (QDs) such as CuInS2/ZnS have attempted to replace CdSe, their heavy-metal-containing counterparts. CuInS2/ZnS is synthesized in a two-step process that involves the fabrication of CuInS2 (CIS) nanocrystals (NCs) followed by the addition of zinc precursors. Instead of the usual core/shell architecture often exhibited by binary QDs, coating CIS QDs results in alloyed and/or partially alloyed cation-exchange (CATEX) QDs. The effect that zinc has on the properties of CIS NCs was studied by incorporating zinc during the first step of the synthesis. Different In:Cu:Zn ratios were employed in this study, maintaining a constant 4:1 …

High-Temperature Optoelectronic Device Characterization And Integration Towards Optical Isolation For High-Density Power Modules, Syam Madhusoodhanan

Graduate Theses and Dissertations

Power modules based on wide bandgap (WBG) materials enhance reliability and considerably reduce cooling requirements that lead to a significant reduction in total system cost and weight. Although these innovative properties lead power modules to higher power density, some concerns still need to be addressed to take full advantage of WBG-based modules. For example, the use of bulky transformers as a galvanic isolation system to float the high voltage gate driver limits further size reduction of the high-temperature power modules. Bulky transformers can be replaced by integrating high-temperature optocouplers to scale down power modules further and achieve disrupting performance in …

Triple-Junction Solar Cells : In Parallel., Levi C Mays

Electronic Theses and Dissertations

This paper looks into the current inefficiency of solar cells and attempts a few alternative solar cell structures in order to provide a more effective source of renewable energy. Currently, multi-junction solar cells are being developed to capture the sun’s light more efficiently. One of the ideas in this paper is to add a window to see if the addition of such a layer into a junction will increase the voltage while maintaining nearly the same current output. Central to this paper is the rearranging of the conducting layers of the multi-junction cell so that the junctions can be connected …

(111)-Oriented Gallium Arsenide Tensile-Strained Quantum Dots Tailored For Entangled Photon Emission, Christopher Schuck

Boise State University Theses and Dissertations

The use of molecular beam epitaxy (MBE) to create quantum dots (QDs) embedded in solid-state semiconductor media has been at the forefront of novel and record-breaking optoelectronic device development for many years. However, the wide range of semiconductor fabrication capabilities and the non-equilibrium growth parameters inherent to MBE mean that there are still many QD research frontiers that are yet to be explored.

This work focuses on a recently discovered method that permits, for the first time, the growth of QDs under tensile strain on non-(100) surfaces. My research explores the first (and currently only) optically active materials system for …

Characterization Of Metal Contacts On Hydrothermally Synthesized Uranium Dioxide For Novel Semiconductor Applications, Tory E. Robinson

Theses and Dissertations

This research is focused on determining which metals or combinations of metals form effective electrical contacts on hydrothermally synthesized UO2 substrates to allow for additional work in characterization of the material as well as the feasibility of its use in semiconductor devices such as solid-state neutron detectors. A methodology was established for selection of candidate metals. Target mixtures composed of Au, Ag, Pt, and Mg were chosen along with several single-metals. Thin metal films were deposited onto tungsten probe tips and hydrothermally synthesized UO2 samples to allow for analysis of mechanical and deposited contact to the substrates through I-V measurements.

Growth And Behaviors Of Inn/Gan Multiple Quantum Wells By Plasma-Assisted Molecular Beam Epitaxy, Chen Li

Graduate Theses and Dissertations

Fully realizing the potential of InGaN semiconductors requires high quality materials with arbitrary In-content. To this date the growth of In-rich InGaN films is still challenging since it suffers from the low growth temperatures and many detrimental alloying problems. InN/GaN multiple quantum wells (MQWs) and super lattices (SLs) are expected to be promising alternatives to random InGaN alloys since in principle they can achieve the equivalent band gap of InGaN random alloys with arbitrarily high In-content and at the same time bypass many growth difficulties.

This dissertation focuses on studying the growth mechanisms, structural properties and energy structures of InN/GaN …

Thienoisatin Oligomers As N-Type Molecular Semiconductors, Natalie M. Kadlubowski, Xuyi Luo, Jianguo Mei

The Summer Undergraduate Research Fellowship (SURF) Symposium

Organic field effect transistors (OFETs) offer many advantages compared to traditional inorganic transistors, such as flexibility and solution processability. In this study we design and synthesize two thienoisatin-based organic semiconducting small molecules, then investigate their electronic properties in n-type OFETs. To introduce n-type charge transport, electron-withdrawing dicarbonitrile moieties were installed on thienoisoindigo and bis-thienoisatin molecules, which led to a quinoidal conjugation on thienoisoindigo, while maintaining an aromatic conjugation on the bis-thienoisatin. Following the syntheses, the molecules were characterized to determine highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels via cyclic voltammetry, as well as any potential …

Properties Of Matter, Mike Jackson, Holly Haney

High School Lesson Plans

Students will investigate the relationship(s) between thermal and electrical properties of matter. First, students will use a multimeter and temperature probe to investigate the relationship between electrical resistance and temperature of an electrical resistor composed of metals. They will then graph collected data to analyze the relationship and draw a conclusion as to their relationship. They will then perform the same investigation on a thermal resistor made of a semiconducting substance and analyze that collected data. Finally, using ClaimEvidence-Reasoning (CER) structure, students will use their experimental evidence to state the similarities and differences between the electro-thermal properties of metals and …

Electrical Characterization Of Irradiated Semiconducting Amorphous Hydrogenated Boron Carbide, George Glen Peterson

Department of Mechanical and Materials Engineering: Dissertations, Theses, and Student Research

Semiconducting amorphous partially dehydrogenated boron carbide has been explored as a neutron voltaic for operation in radiation harsh environments, such as on deep space satellites/probes. A neutron voltaic device could also be used as a solid state neutron radiation detector to provide immediate alerts for radiation workers/students, as opposed to the passive dosimetry badges utilized today. Understanding how the irradiation environment effects the electrical properties of semiconducting amorphous partially dehydrogenated boron carbide is important to predicting the stability of these devices in operation. p-n heterojunction diodes were formed from the synthesis of semiconducting amorphous partially dehydrogenated boron carbide on silicon …

Spray Printing Of Organic Semiconducting Single Crystals, Grigorios-Panagiotis Rigas, Marcia M. Payne, John E. Anthony, Peter N. Horton, Fernando A. Castro, Maxim Shkunov

Chemistry Faculty Publications

Single-crystal semiconductors have been at the forefront of scientific interest for more than 70 years, serving as the backbone of electronic devices. Inorganic single crystals are typically grown from a melt using time-consuming and energy-intensive processes. Organic semiconductor single crystals, however, can be grown using solution-based methods at room temperature in air, opening up the possibility of large-scale production of inexpensive electronics targeting applications ranging from field-effect transistors and light-emitting diodes to medical X-ray detectors. Here we demonstrate a low-cost, scalable spray-printing process to fabricate high-quality organic single crystals, based on various semiconducting small molecules on virtually any substrate by …

Synthesis, Characterization, And Electronic Properties Of Novel 2d Materials : Transition Metal Dichalcogenides And Phosphorene., George Anderson

Electronic Theses and Dissertations

Scaling electronic devices has become paramount. The current work builds upon scaling efforts by developing novel synthesis methods and next generation sensing devices based on 2D materials. A new combination method utilizing thermal evaporation and chemical vapor deposition was developed and analyzed to show the possibilities of Transition Metal Dichalcogenide monolayers and heterostructures. The materials produced from the above process showed high degrees of compositional control in both spatial dimensions and chemical structure. Characterization shows controlled fabrication of heterostructures, which may pave the way for future band gap engineering possibilities. In addition, Phosphorene based field effect transistors, photodetectors, and gas …

Constructing And Optimizing A Single Wafer Solar Cell Array In The Microfabrication Lab At California Polytechnic State University At San Luis Obispo, Rod Marstell

Master's Theses

CONSTRUCTING AND OPTIMIZING A SINGLE WAFER SOLAR CELL ARRAY IN THE MICROFABRICATION LAB AT CALIFORNIA POLYTECHNIC STATE UNIVERSITY AT SAN LUIS OBISPO

Solar cells are more and more becoming a significant source of energy in the world today. They are used to power entire buildings as well as small devices and everything in between, and are utilized all around the world. Smaller solar devices, such as hearing aid battery chargers, cost a lot of money relative to the monetary wealth in third-world countries. For this purpose, a less expensive, more efficient solar cell array should be developed.

This study contains …

The Effect Of Polarization And Ingan Quantum Well Shape In Multiple Quantum Well Light Emitting Diode Heterostructures, Patrick M. Mcbride

Master's Theses

Previous research in InGaN/GaN light emitting diodes (LEDs) employing semi-classical drift-diffusion models has used reduced polarization constants without much physical explanantion. This paper investigates possible physical explanations for this effective polarization reduction in InGaN LEDs through the use of the simulation software SiLENSe. One major problem of current LED simulations is the assumption of perfectly discrete transitions between the quantum well (QW) and blocking layers when experiments have shown this to not be the case. The In concentration profile within InGaN multiple quantum well (MQW) devices shows much smoother and delayed transitions indicative of indium diffusion and drift during …

Creating A Solar Cell Array From A Single Silicon Wafer, Samyukta Gade, Roderick Marstell

Materials Engineering

Two different processes to create multi-celled solar panels from single wafers were made and implemented. To do this, the cells must not have a common ground, and both designs use different approaches to solve this problem. One utilizes a 2.9 µm deep n-type well within a 10.74 µm deep p-type well in an n-type wafer. There are two cells in series, which has a theoretical voltage of 1 V. The cells are connected in series with 1.9 µm thick gold traces. Any area that the gold is not in contact with the silicon has a .5 µm layer silicon dioxide …