Semiconductor and Optical Materials Commons^™

Synthesis, Structural Characterization And Optical Studies Of Silver-Indium-(Zinc)-Chalcogenide Fluorescent Quantum Dots, Sujal Acharya

Graduate Theses and Dissertations

Developing a non-toxic, high-performance fluorescent nanomaterial is crucial for overcoming the environmental and health restrictions of current cadmium, and lead based quantum dots (QDs), which limit the application of quantum dots in optoelectronics and bioimaging. In this thesis, we synthesized environmentally friendly AgInS2 QDs by a colloidal method, systematically altering the In/Ag precursor ratio from 2 to 6 to study the impact on their optical and photophysical properties. Our goals were to find the optimal stoichiometry for maximum quantum efficiency and stability. We also investigated further improving optical and photophysical properties through shelling with ZnS. The emission spectra appeared broad, …

Incorporation Of Zinc In Pre-Alloyed Cuin[Zn]S2/Zns Quantum Dots, Jean Carlos Morales Orocu

Graduate Theses and Dissertations

Since the early 2000s heavy-metal-free quantum dots (QDs) such as CuInS2/ZnS have attempted to replace CdSe, their heavy-metal-containing counterparts. CuInS2/ZnS is synthesized in a two-step process that involves the fabrication of CuInS2 (CIS) nanocrystals (NCs) followed by the addition of zinc precursors. Instead of the usual core/shell architecture often exhibited by binary QDs, coating CIS QDs results in alloyed and/or partially alloyed cation-exchange (CATEX) QDs. The effect that zinc has on the properties of CIS NCs was studied by incorporating zinc during the first step of the synthesis. Different In:Cu:Zn ratios were employed in this study, maintaining a constant 4:1 …

Structure, Morphology And Composition-Property Elucidation Of Ni–Mo And Ni−Mo−P Nanocrystals For Water Splitting Reactions And Group Iv Alloy And Silicate Nanocrystals For Visible To Near Ir Optoelectronics, Ebtesam Hassan Abuelenein Eladgham

Theses and Dissertations

Abstract

Structure, Morphology and Composition-Property Elucidation of Ni–Mo and Ni−Mo−P Nanocrystals for Water Splitting Reactions and Group IV Alloy and Silicate Nanocrystals for Visible to Near IR Optoelectronics

by

Ebtesam Hassan Abuelenein Eladgham

A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy at Virginia Commonwealth University.

Advisor: Indika U Arachchige

Associate Professor, Department of Chemistry

Nanomaterials have gained a great attention because of their unique physical properties with size intermediate between molecular materials and extended solids. They have a large surface to volume ratio and display size tunable physical properties that was not …

Growth Of Indium Nitride Quantum Dots By Molecular Beam Epitaxy, Steven P. Minor

Graduate Theses and Dissertations

Over the last decade, the evolution of the global consciousness in response to decreasing environmental conditions from global warming and pollution has led to an outcry for finding new alternative/clean methods for harvesting energy and determining ways to minimize energy consumption. III-nitride materials are of interest for optoelectronic and electronic device applications such as high efficiency solar cells, solid state lighting (LEDs), and blue laser (Blu-ray Technology) applications. The wide range of direct band gaps covered by its alloys (0.7eV-6.2eV) best illustrates the versatility of III-nitride materials. This wide range has enabled applications extending from the ultraviolet to the near …

(111)-Oriented Gallium Arsenide Tensile-Strained Quantum Dots Tailored For Entangled Photon Emission, Christopher Schuck

Boise State University Theses and Dissertations

The use of molecular beam epitaxy (MBE) to create quantum dots (QDs) embedded in solid-state semiconductor media has been at the forefront of novel and record-breaking optoelectronic device development for many years. However, the wide range of semiconductor fabrication capabilities and the non-equilibrium growth parameters inherent to MBE mean that there are still many QD research frontiers that are yet to be explored.

This work focuses on a recently discovered method that permits, for the first time, the growth of QDs under tensile strain on non-(100) surfaces. My research explores the first (and currently only) optically active materials system for …

Fluorescent Materials Design At Nanoscale For Biomedical Photonics In Near Infrared Window, Kohei Soga, Masao Kamimura

The 8th International Conference on Physical and Numerical Simulation of Materials Processing

No abstract provided.

Biolabeling Through The Use Of Water-Soluble Colloidal Quantum Dots, Cody Stombaugh

Honors Projects

Nanomaterials continues to be a growing field of study due to their wide range of potential applications. Quantum dots are artificially synthesized crystalline clusters of atoms able to confine electron motion as a result of their incredibly small size. Recently, medical applications of nanomaterials have expanded greatly. Quantum dots are ideal for biolabeling due to their rather narrow photoluminescence emission peaks. By synthesizing quantum dots of a specific diameter, it is possible to predetermine the peak photoluminescence wavelength of a sample. Through ligand exchange and immunoconjugation of the quantum dots with proteins, it is possible to use the quantum dots …

Synthesis And Characterization Of Cdse-Zns Core-Shell Quantum Dots For Increased Quantum Yield, Joshua James Angell

Master's Theses

Quantum dots are semiconductor nanocrystals that have tunable emission through changes in their size. Producing bright, efficient quantum dots with stable fluorescence is important for using them in applications in lighting, photovoltaics, and biological imaging. This study aimed to optimize the process for coating CdSe quantum dots (which are colloidally suspended in octadecene) with a ZnS shell through the pyrolysis of organometallic precursors to increase their fluorescence and stability. This process was optimized by determining the ZnS shell thickness between 0.53 and 5.47 monolayers and the Zn:S ratio in the precursor solution between 0.23:1 and 1.6:1 that maximized the relative …

Morphology Of Ingaas Multilayer Nanostructure On Gaas High-Index Surfaces, Yanze Xie

Graduate Theses and Dissertations

This work aimed to explore nanostructure configuration by growing multiple layers of strained InGaAs on GaAs high index surface. The knowledge learned would help to achieve a comprehensive picture of strain-driven nanostructure evolution. Ordered arrays of InGaAs quantum dots were demonstrated on GaAs(311)B. The ordering patterns depended on the thickness of GaAs interlayer between InGaAs Quantum Dots (QDs). With an increased interfacial thickness, a transition from two dimensional (2D) lateral ordering to 1D dot chains was observed. InGaAs growth on GaAs(311)A and GaAs(331)A ended up with 1D quantum wires (QWRs). Straight InGaAs QWRs were uniformly distributed across the surfaces owing …

Nonthermal Laser-Induced Formation Of Crystalline Ge Quantum Dots On Si(100), M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The effects of laser-induced electronic excitations on the self-assembly of Ge quantum dots on Si (100) - (2×1) grown by pulsed laser deposition are studied. Electronic excitations due to laser irradiation of the Si substrate and the Ge film during growth are shown to decrease the roughness of films grown at a substrate temperature of ∼120 °C. At this temperature, the grown films are nonepitaxial. Electronic excitation results in the formation of an epitaxial wetting layer and crystalline Ge quantum dots at ∼260 °C, a temperature at which no crystalline quantum dots form without excitation under the same deposition conditions. …

Growth Of Ge Quantum Dots On Si(100)-(2×1) By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Self-assembled germanium quantum dots (QDs) were grown on Si(100)-(2×1) by pulsed laser deposition. In situ reflection-high energy electron diffraction (RHEED) and postdeposition atomic force microscopy are used to study the growth of the QDs. Several films of different thicknesses were grown at a substrate temperature of 400 °C using a Q-switched Nd:yttrium aluminum garnet laser (λ= 1064 nm, 40 ns pulse width, 23 J/cm ² fluence, and 10 Hz repetition rate). At low film thicknesses, hut clusters that are faceted by different planes, depending on their height, are observed after the completion of the wetting layer. With increasing film thickness, …