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Semiconductor and Optical Materials Commons™
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Articles 1 - 9 of 9
Full-Text Articles in Semiconductor and Optical Materials
Development Of Alternative Plasma Etching Techniques For The Selective Removal Of Tan With Respect To Sioch Dielectric Materials To Enable Future Back-End-Of-The-Line Scaling, Ivo Otto Iv
Electronic Theses & Dissertations (2024 - present)
Transistor scaling has continued according to Moore’s Law for over fifty years. As transistor size decreases, adequate power delivery is required to enable transistor scaling without performance loss. Power delivery is provided by a metal interconnect network with insulating dielectric that connects the transistor level to the power source, the signal speed within this metal line network limiting transistor level switching speeds. Reduction of signal delay has moved from primarily dimension-based improvement towards adoption of conductor and dielectric materials with lower resistivity and a reduced dielectric constant value, respectively: transitioning from Al/SiO2 to Cu/low-κ SiOCH. With this transition comes …
Etching Process Development For Sic Cmos, Weston Reed Renfrow
Etching Process Development For Sic Cmos, Weston Reed Renfrow
Graduate Theses and Dissertations
Silicon Carbide (SiC) is an exciting material that is growing in popularity for having qualities that make it a helpful semiconductor in extreme environments where silicon devices fail. The development of a SiC CMOS is in its infancy. There are many improvements that need to be made to develop this technology further. Photolithography is the most significant bottleneck in the etching process; it was studied and improved upon. Etching SiC can be a challenge with its reinforced crystal structure. Chlorine-based inductively coupled plasma (ICP) etching of intrinsic SiC and doped SiC, SiO2, and Silicon has been studied. A baseline chlorine …
Fabrication And Characterization Of Edge-Emitting Semiconductor Lasers, Junyeob Song
Fabrication And Characterization Of Edge-Emitting Semiconductor Lasers, Junyeob Song
Graduate Theses - Physics and Optical Engineering
The semiconductor laser was invented in 1962, and has recently become ubiquitous in modern life. This thesis focuses on the development of a semiconductor laser fabricating process which utilizes semiconductor manufacturing technology in a cleanroom environment including photolithography, etching, deposition, and bonding processes. A photomask for patterning is designed, recipes of photolithography process and etching process are developed with experiments. This work gives how to develop the process of fabrication and determine the parameters for each processes. A series of semiconductor laser devices are then fabricated using the developed process and characterization is performed to assess device performance with industrial …
Metal-Assisted Etching Of Silicon Molds For Electroforming, Ralu Divan, Dan Rosenthal '14, Karim Ogando, Leonidas E. Ocola, Daniel Rosenmann, Nicolaie Moldovan
Metal-Assisted Etching Of Silicon Molds For Electroforming, Ralu Divan, Dan Rosenthal '14, Karim Ogando, Leonidas E. Ocola, Daniel Rosenmann, Nicolaie Moldovan
Student Publications & Research
Ordered arrays of high-aspect-ratio micro/nanostructures in semiconductors stirred a huge scientific interest due to their unique one-dimensional physical morphology and the associated electrical, mechanical, chemical, optoelectronic, and thermal properties. Metal-assisted chemical etching enables fabrication of such high aspect ratio Si nanostructures with controlled diameter, shape, length, and packing density, but suffers from structure deformation and shape inconsistency due to uncontrolled migration of noble metal structures during etching. Hereby the authors prove that a Ti adhesion layer helps in stabilizing gold structures, preventing their migration on the wafer surface while not impeding the etching. Based on this finding, the authors demonstrate …
Design, Fabrication, Modeling And Characterization Of Electrostatically-Actuated Silicon Membranes, Brian C. Stahl
Design, Fabrication, Modeling And Characterization Of Electrostatically-Actuated Silicon Membranes, Brian C. Stahl
Master's Theses
This thesis covers the design, fabrication, modeling and characterization of electrostatically actuated silicon membranes, with applications to microelectromechanical systems (MEMS). A microfabrication process was designed to realize thin membranes etched into a silicon wafer using a wet anisotropic etching process. These flexible membranes were bonded to a rigid counterelectrode using a photo-patterned gap layer. The membranes were actuated electrostatically by applying a voltage bias across the electrode gap formed by the membrane and the counterelectrode, causing the membrane to deflect towards the counterelectrode. This deflection was characterized for a range of actuating voltages and these results were compared to the …
Optical And Etching Studies Of Native Aluminum Oxide Layers For Use In Microcavity Photonic Devices, William L. Bernhard
Optical And Etching Studies Of Native Aluminum Oxide Layers For Use In Microcavity Photonic Devices, William L. Bernhard
Theses and Dissertations
Optical communication and computing systems are required to meet future information transfer and processing needs. Microcavity devices serve as an enabling technology to implement and integrate optoelectronic systems. It is important to understand the optical and mechanical properties of materials utilize within microcavity devices. Only then is it possible to accurately model and analyze structures. Microcavity structures incorporating a high aluminum content AlGaAs layers are designed, grown, processed, and measured. The processing of these devices includes the conversion of high aluminum-content AlGaAs layers to native aluminum oxide (AlO) layers through the process of thermal oxidation. This selective conversion of microcavity …
Photoluminescence Of Photoelectrochemically Etched N+-Si, Guozheng Li, Chengqian Zhang, Xiumei Yang
Photoluminescence Of Photoelectrochemically Etched N+-Si, Guozheng Li, Chengqian Zhang, Xiumei Yang
Journal of Electrochemistry
PS layer on n+-Si with (111) orientation prepered by means of photoelectrochemically etched has photo-luminescent (PL) ability like PS layer on usual n-Si. The data of PL spectra and quenching are given.
Electroluminescence Of Photoelectrochemically Etched N+-Si, Guozheng Li, Chengqian Zhang, Xiumei Yang
Electroluminescence Of Photoelectrochemically Etched N+-Si, Guozheng Li, Chengqian Zhang, Xiumei Yang
Journal of Electrochemistry
Porous silicon with micrometer size pores, which is made on n+-Si by photoelectrochemically etched, has electroluminescent property. Each monochromic intensity and wavelength range of luminescent spectra depend on polarized potential. The intersity and the stability of cathodic electroluminescence is high than those of anodic one. Voltammetric behavior before quenching indicated that the electrochemical reactions of some surface species are involved in except the reduction of S2O82-, which leads to radiative recombination. The energy band diagram based on n+-Si(Eg=1.1 eV)/PS(Eg=1.8 eV) junction is proposed.
Cualse² Thin Films Obtained By Chalcogenization, S. Marsillac, K. Benchouk, C. El Moctar, J. C. Bernède, J. Pouzet, A Khellil, M. Jamali
Cualse² Thin Films Obtained By Chalcogenization, S. Marsillac, K. Benchouk, C. El Moctar, J. C. Bernède, J. Pouzet, A Khellil, M. Jamali
Electrical & Computer Engineering Faculty Publications
CuAlSe2 thin films have been synthesized by chalcogenization of thin Cu and Al layers sequentially deposited by evaporation under vacuum. It is shown that CuAlSe2 films are obtained with some Cu2-δSe and Se phases present at the surface. These surface phases are suppressed by annealing under vacuum and by chemical etching in a KCN solution. At the end of the process, the XRD spectrum demonstrates that textured CuAlSe2 films have been obtained with preferential orientation of the crystallites along the (112) direction. The gap of the films is 2.7 eV as expected. The …