Open Access. Powered by Scholars. Published by Universities.®

Semiconductor and Optical Materials Commons™

Open Access. Powered by Scholars. Published by Universities.®

2025

Discipline
Institution
Keyword
Publication
Publication Type

Articles 31 - 37 of 37

Full-Text Articles in Semiconductor and Optical Materials

Growth Kinetics And Stability Of Metal Halide Perovskite Nanocrystals: Influence Of Stirring Speed And Water Exposure, You-Lin Huang Jan 2025

Growth Kinetics And Stability Of Metal Halide Perovskite Nanocrystals: Influence Of Stirring Speed And Water Exposure, You-Lin Huang

Theses and Dissertations--Mechanical and Aerospace Engineering

Cesium lead bromide (CsPbBr3) perovskite nanocrystals (NCs) have garnered significant interest due to their exceptional optoelectronic properties, including high photoluminescence quantum yield, tunable bandgap, and excellent carrier dynamics. These attributes make them promising candidates for applications in light-emitting diodes, photovoltaics, and sensing technologies. However, optimizing their synthesis and improving their environmental stability remain critical challenges. This dissertation explores the growth kinetics of CsPbBr3 NCs, focusing on the effects of stirring speed and water exposure on their structural and optical properties.

The synthesis of CsPbBr3 NCs was performed using both mechanochemical (MC) and antisolvent methods, enabling an …


Improving The Figure Of Merit In Iron-Vanadium-Aluminium Thermoelectric Alloy System Guided By Computational Modeling, Tao Fang Jan 2025

Improving The Figure Of Merit In Iron-Vanadium-Aluminium Thermoelectric Alloy System Guided By Computational Modeling, Tao Fang

Dartmouth College Ph.D Dissertations

Thermoelectric materials can convert a thermal gradient to electricity. Currently, commercialized Bi2Te3 is brittle and expensive, which restricts the usage of this material. Compared to other thermoelectric materials, Fe2VAl is cost-effective, stable and more robust mechanically. However, the figure of merit (zT) had been much lower than Bi2Te3. In this thesis, our main goal is to improve the figure of merit in Fe2VAl system guided by computational modeling. We will start the discussion by presenting the Ge doped Fe2VAl sample with record thermoelectric figure of merit value. …


Dual-Bed Radioiodine Capture From Complex Gas Streams With Zeolites: Regeneration And Reuse Of Primary Sorbent Beds For Sustainable Waste Management, Krista Carlson, Brian J. Riley, Joshua Turner, David C. Cantu, Dev Chidambaram, Charmayne Lonergan, Jeffrey D. Rimer Jan 2025

Dual-Bed Radioiodine Capture From Complex Gas Streams With Zeolites: Regeneration And Reuse Of Primary Sorbent Beds For Sustainable Waste Management, Krista Carlson, Brian J. Riley, Joshua Turner, David C. Cantu, Dev Chidambaram, Charmayne Lonergan, Jeffrey D. Rimer

Materials Science and Engineering Faculty Research & Creative Works

No abstract provided.


Evaluation Of Processing Conditions For The Reduction Of Electrochemical Salt Waste Using Phosphate-Based Dechlorination, Harmony Werth, Jade Beland, Paige Murray, Dave Liang, Laurel Sharpless, Jonathan Evarts, Charmayne Lonergan, Brian J. Riley, Michael Simpson, Krista Carlson Jan 2025

Evaluation Of Processing Conditions For The Reduction Of Electrochemical Salt Waste Using Phosphate-Based Dechlorination, Harmony Werth, Jade Beland, Paige Murray, Dave Liang, Laurel Sharpless, Jonathan Evarts, Charmayne Lonergan, Brian J. Riley, Michael Simpson, Krista Carlson

Materials Science and Engineering Faculty Research & Creative Works

Electrochemical processing of used nuclear fuel in molten chloride salts generates complex radioactive salt waste. Dechlorination of waste salt using phosphate compounds at elevated temperatures (∼600 °C) reduces the volume of material for disposal while evolving gaseous chlorine compounds that could be used to transform metallic uranium into UCl3. In this study, the effects of processing temperature, environment (air or argon), and H3PO4 precursor-to-chlorine ratio on the dechlorination efficacy of a simple alkali salt mixture (SSM) and a salt waste simulant (ERV3) were evaluated. For both salts, the highest chlorine release was concurrent with the water boiling. For the SSM, …


Development Of Group Iii-V Quantum Confinement-Enabled Detectors: Bias-Tunable Quantum Well Infrared Photodetector (Qwip) And Quantum Dot Scintillation Detector (Qdsd), Gyana R. Biswal Jan 2025

Development Of Group Iii-V Quantum Confinement-Enabled Detectors: Bias-Tunable Quantum Well Infrared Photodetector (Qwip) And Quantum Dot Scintillation Detector (Qdsd), Gyana R. Biswal

Electronic Theses & Dissertations (2024 - present)

This dissertation discloses the physics, fabrication, characterization, and analysis of two novel types of group III-V semiconductor detectors relying on quantum confinement of carriers, namely voltage-tunable quantum well infrared photodetectors (QWIP) and a high-yield ultrafast quantum dot scintillation detector (QDSD). Both QWIP and QDSD heterostructures presented here were grown on 3” GaAs (001) substrates using molecular beam epitaxy (MBE).

A major part of the dissertation focuses on development of the voltage-tunable QWIPs targeting detection in the mid-wave infrared region (MWIR) (3μm -5μm) and long-wave infrared region (LWIR) (8μm -12μm) with control of sensitivity by the applied bias. The QWIPs utilize …


Epitaxial Quantum Dot Scintillators With Monolithic Photodetector Integration: Physics, Fabrication And Characterization Of Materials And Devices, Allan Oreave Minns Jan 2025

Epitaxial Quantum Dot Scintillators With Monolithic Photodetector Integration: Physics, Fabrication And Characterization Of Materials And Devices, Allan Oreave Minns

Electronic Theses & Dissertations (2024 - present)

This dissertation discloses the physics, fabrication, and characterization of high-performance scintillator detectors based on epitaxial InAs quantum dots (QDs) in GaAs. The detector crystals grown include monolithically integrated In0.35GaAs photodetectors with Al0.92-0.6In0.03-0.35Ga0.05As metamorphic buffer layers (MBL). A device fabrication process was developed for the lithographic patterning, chemical etching, contact metallization and readout integration of materials grown by means of molecular beam epitaxy (MBE) on 3-inch GaAs (001) wafers. Low capacitance integration with readout electronics was achieved through wire bonds to custom printed circuit boards (PCBs) with commercial components.

The relationship between device …


Investigating The Roles Of Intrinsic Point Defects And Transition Metal Doping In Monolayer And Bulk Tis2, Patrick J. Keeney Jan 2025

Investigating The Roles Of Intrinsic Point Defects And Transition Metal Doping In Monolayer And Bulk Tis2, Patrick J. Keeney

UNF Graduate Theses and Dissertations

Within this thesis, the magnetic and electronic properties of various 1T-TiS2 systems are thoroughly examined using density functional theory (DFT) and scanning tunneling microscopy (STM). Formation energies and electronic implications of intrinsic point defects in bulk TiS2 and monolayer TiS2 are analyzed by approximating a computational monolayer of TiS2 as the surface layer of a bulk sample. This approximation is validated given that intralayer covalent bonding dominates interlayer van der Waals interactions. We conclude that the most energetically favorable intrinsic defects are Ti atoms settling above the outermost S plane and S vacancies. In addition, the …