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2008

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Articles 1 - 14 of 14

Full-Text Articles in Semiconductor and Optical Materials

Design, Fabrication, Modeling And Characterization Of Electrostatically-Actuated Silicon Membranes, Brian C. Stahl Dec 2008

Design, Fabrication, Modeling And Characterization Of Electrostatically-Actuated Silicon Membranes, Brian C. Stahl

Master's Theses

This thesis covers the design, fabrication, modeling and characterization of electrostatically actuated silicon membranes, with applications to microelectromechanical systems (MEMS). A microfabrication process was designed to realize thin membranes etched into a silicon wafer using a wet anisotropic etching process. These flexible membranes were bonded to a rigid counterelectrode using a photo-patterned gap layer. The membranes were actuated electrostatically by applying a voltage bias across the electrode gap formed by the membrane and the counterelectrode, causing the membrane to deflect towards the counterelectrode. This deflection was characterized for a range of actuating voltages and these results were compared to the …


Study On The Texturization Of C-Si Wafers By Different Kinds Of Alkaline For Heterojunction Solar Cells, Yu-Hua Dou, Yu-Qin Zhou, Mei-Fang Zhu, Shuang Song, Feng-Zhen Liu, Jin-Long Liu, Zhan-Jun Zhang Nov 2008

Study On The Texturization Of C-Si Wafers By Different Kinds Of Alkaline For Heterojunction Solar Cells, Yu-Hua Dou, Yu-Qin Zhou, Mei-Fang Zhu, Shuang Song, Feng-Zhen Liu, Jin-Long Liu, Zhan-Jun Zhang

Journal of Electrochemistry

The texturization of(100) crystalline silicon(c-Si) wafer was studied by field-emission scanning electron microscope using different kinds of etchant: sodium hydroxide,sodium carbonate and tribasic sodium phosphate.By optimizing the etching parameters,the lowest values of averaged reflectance(Rav) were obtained to be 9.70% for NaOH,9.76% for Na2CO3 and 8.63% for Na3PO4·12H2O,which is comparable to that of the wafer with textured surface covered with an anti-reflection coating of either silicon nitride or thermally grown silicon dioxide.The relation of Rav and surface morphology of textured wafer was analyzed.Moreover,special emphasis was put on the role of isopropyl alcohol(IPA) …


Preparation And Optical Transmission Of The Zno Nanorod Array Films, Feng Ye, Jing-Jing Li, Tong-Tao Wang, Yong-Liang Wang, Yun Liu, Xin-Dong Wang Nov 2008

Preparation And Optical Transmission Of The Zno Nanorod Array Films, Feng Ye, Jing-Jing Li, Tong-Tao Wang, Yong-Liang Wang, Yun Liu, Xin-Dong Wang

Journal of Electrochemistry

By using a galvaostatic electrodeposition method in the ZnCl2 solution,the highly oriented ZnO nanorod array films have been successfully prepared on ITO substrate after the pretreatment with ZnO nanoparticles.And they were characterized by scanning electron microscope,X-ray diffraction and transmittance spectra.The results indicated that the ZnO nanorod arrays grew along(001) direction with an orientation perpendicular to the substrate.When the wavelength of incident was over 380 nm,the ZnO nanorod arrays showed high optical transmission of above 95%.Furthermore,the band gap became narrower.


The Effect Of Radiation On The Electrical Properties Of Aluminum Gallium Nitride/Gallium Nitride Heterostructures, John W. Mcclory Jun 2008

The Effect Of Radiation On The Electrical Properties Of Aluminum Gallium Nitride/Gallium Nitride Heterostructures, John W. Mcclory

Theses and Dissertations

AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) were irradiated at low temperature and the temperature dependent changes to drain current, gate current, capacitance, and transconductance were measured. The results were compared to the charge control model of the drain current and trap-assisted tunneling model of the gate current to determine the source of the radiation-induced changes. AlGaN/GaN HFETs demonstrated threshold voltage shifts and drain current changes after irradiation. After electron and neutron irradiation applied at ~80 K, measurement of the drain current at this temperature showed an increase that saturated after 1013 electrons/cm2 or 1010 neutrons/cm2 due …


Preparation And Photoelectrochemical Properties Of Fe-Doped Tio2 Nanotube Arrays, Jing Li, Lan Sun, Hui-Fang Zhuang, Cheng-Lin Wang, Rong-Gui Du, Chang-Jian Lin May 2008

Preparation And Photoelectrochemical Properties Of Fe-Doped Tio2 Nanotube Arrays, Jing Li, Lan Sun, Hui-Fang Zhuang, Cheng-Lin Wang, Rong-Gui Du, Chang-Jian Lin

Journal of Electrochemistry

The Fe-doped TiO2 nanotube arrays were fabricated in Fe(NO3)3-HF mixing solutions by electrochemical anodic oxidation method,and characterized by FESEM,Raman,XPS and DRS.The effect of Fe concentratiions on photoelectrochemical property of the arrays was also investigated.The diameters and lengths of Fe-doped TiO2 nanotube arrays were 50~90 nm and about 200 nm,respectively.Compared with the undoped TiO2 nanotube arrays,the absorption edge of Fe-doped TiO2 nanotube arrays appeared red shifting.The more Fe content,the larger red shifting,in addition,the photocurrent of Fe-doped TiO2 nanotube arrays increased obviously.


The Effect Of Vibratory Milling On The Powder Properties Of Zinc Oxide Varistors, Maura Kelleher, M.S.J. Hashmi May 2008

The Effect Of Vibratory Milling On The Powder Properties Of Zinc Oxide Varistors, Maura Kelleher, M.S.J. Hashmi

Articles

The formation of powders from multi-elemental oxides for the subsequent formation of a green and sintered compact body is a major processing operation in the manufacture of ZnO varistors. The physical and chemical properties of the metal oxides are crucial not only for the formation of a varistor component with optimum microstructure and thus electrical characteristics but also for avoiding the introduction of flaws and reduced yield during subsequent manufacturing stages. The effect of vibratory milling using cylindrical zirconia media on the physical and chemical properties of the mixed multi-elemental oxide additives of a commercial ZnO varistor formulation was studied. …


Optical Properties Of Colloidal Core/Shell Nanocrystals, Abhishek Joshi May 2008

Optical Properties Of Colloidal Core/Shell Nanocrystals, Abhishek Joshi

Electrical Engineering Undergraduate Honors Theses

Recently, colloidal core/shell nanocrystals have found use in several applications such as solar cells, light emitting diodes, fluorescent dies, etc. In this thesis, optical properties of colloidal CdSe/ZnS core/shell nanocrystals were studied. The samples were prepared such that the nanocrystals were embedded in a UV curable resin. Once the samples were cured, they were placed in different spectrophotometers to measure the absorbance and the photoluminescence (PL) spectrum. The effect on the absorbance and PL spectra was investigated by using nanocrystal samples of different quantum dot sizes and by changing the temperature of the samples. It was found that the energy …


Development Of Low Temperature Alpha Alumina Coatings By Ac Magnetron Sputtering, Andrew Cloud May 2008

Development Of Low Temperature Alpha Alumina Coatings By Ac Magnetron Sputtering, Andrew Cloud

Mechanical Engineering Undergraduate Honors Theses

Alpha-phase aluminum oxide thin films were created using an Isoflux ICM-10 dual target inverted cylindrical magnetron sputtering system using mid-frequency AC power supplies. Alpha alumina films were deposited at a magnetron power of 6 kW, 50% oxygen partial pressure by volume, and -35 V DC bias. Film thickness, substrate material, and position and orientation within the deposition chamber were varied. To ensure the deposition conditions are suitable for alloys, the substrate temperature was measured using temperature indicating liquids. The experimental results, supported by Explicit Euler numerical analysis, revealed a steady state temperature of ~480°C at 6kW. Transmission electron microscopy (TEM) …


An Ultrahigh Vacuum Complementary Metal Oxide Silicon Compatible Nonlithographic System To Fabricate Nanoparticle-Based Devices, Arghya Banerjee, Biswajit Das Mar 2008

An Ultrahigh Vacuum Complementary Metal Oxide Silicon Compatible Nonlithographic System To Fabricate Nanoparticle-Based Devices, Arghya Banerjee, Biswajit Das

Electrical & Computer Engineering Faculty Research

Nanoparticles of metals and semiconductors are promising for the implementation of a variety of photonic and electronic devices with superior performances and new functionalities. However, their successful implementation has been limited due to the lack of appropriate fabrication processes that are suitable for volume manufacturing. The current techniques for the fabrication of nanoparticles either are solution based, thus requiring complex surface passivation, or have severe constraints over the choice of particle size and material. We have developed an ultrahigh vacuum system for the implementation of a complex nanosystem that is flexible and compatible with the silicon integrated circuit process, thus …


Nano Quasicrystal Formation And Local Atomic Structure In Zr––Pd And Zr––Pt Binary Metallic Glasses, Junji Saida, Takashi Sanada, Shigeo Sato, Muneyuki Imafuku, Chunfei Li, Akihisa Inoue Jan 2008

Nano Quasicrystal Formation And Local Atomic Structure In Zr––Pd And Zr––Pt Binary Metallic Glasses, Junji Saida, Takashi Sanada, Shigeo Sato, Muneyuki Imafuku, Chunfei Li, Akihisa Inoue

Center for Electron Microscopy and Nanofabrication Publications and Presentations

Formation of the nanoscale icosahedral quasicrystalline phase (I-phase) in the melt-spun Zr70Pd30 and Zr80Pt20 binary metallic glasses were reported. Local atomic structure in the glassy and quasicrystal (QC)-formed states were also analyzed by XRD and EXAFS measurements in order to investigate the formation mechanism of QC phase. The distorted icosahedral-like local structure can be identified around Zr atom in the Zr70Pd30 metallic glass. In the QC formation process, a change of local environment around Zr is detected, in which the approximately one Zr atom substitutes for one Pd atom. In contrast, …


Growth Rate Calculations For Epitaxially Grown Thin Films, D. Bullock Jan 2008

Growth Rate Calculations For Epitaxially Grown Thin Films, D. Bullock

Journal of the Arkansas Academy of Science

No abstract provided.


Activation Energy Of Surface Diffusion And Terrace Width Dynamics During The Growth Of In (4×3) On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali Jan 2008

Activation Energy Of Surface Diffusion And Terrace Width Dynamics During The Growth Of In (4×3) On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The nucleation and growth of indium on a vicinal Si (100) - (2×1) surface at high temperature by femtosecond pulsed laser deposition was investigated by in situ reflection high energy electron diffraction (RHEED). RHEED intensity relaxation was observed for the first ∼2 ML during the growth of In (4×3) by step flow. From the temperature dependence of the rate of relaxation, an activation energy of 1.4±0.2 eV of surface diffusion was determined. The results indicate that indium small clusters diffused to terrace step edges with a diffusion frequency constant of (1.0±0.1) × 1011 s-1. The RHEED specular …


Enhanced Dielectric Properties In Single Crystal-Like Bifeo3 Thin Films Grown By Flux-Mediated Epitaxy, S.-H. Lim, M. Murakami, J. H. Yang, S.-Y. Young, Jason R. Hattrick-Simpers, M. Wuttig, L. G. Salamanca-Riba, I. Takeuchi Jan 2008

Enhanced Dielectric Properties In Single Crystal-Like Bifeo3 Thin Films Grown By Flux-Mediated Epitaxy, S.-H. Lim, M. Murakami, J. H. Yang, S.-Y. Young, Jason R. Hattrick-Simpers, M. Wuttig, L. G. Salamanca-Riba, I. Takeuchi

Faculty Publications

We have fabricated single crystal-like BiFeO3 (BFO) thin films by flux-mediated epitaxy using pulsed laser deposition(PLD). The Bi–Cu–O flux composition and its thickness were optimized using composition spread, thickness gradient, and temperature gradient libraries. The optimized BFO thin films grown with this technique showed larger grain size of ∼2μm and higher dielectric constant in the range of 260–340 than those for standard PLD grown films. In addition, the leakage current density of the films was reduced by two orders of magnitude compared to that of standard PLD grown films.


Nonthermal Laser-Induced Formation Of Crystalline Ge Quantum Dots On Si(100), M. S. Hegazy, H. E. Elsayed-Ali Jan 2008

Nonthermal Laser-Induced Formation Of Crystalline Ge Quantum Dots On Si(100), M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The effects of laser-induced electronic excitations on the self-assembly of Ge quantum dots on Si (100) - (2×1) grown by pulsed laser deposition are studied. Electronic excitations due to laser irradiation of the Si substrate and the Ge film during growth are shown to decrease the roughness of films grown at a substrate temperature of ∼120 °C. At this temperature, the grown films are nonepitaxial. Electronic excitation results in the formation of an epitaxial wetting layer and crystalline Ge quantum dots at ∼260 °C, a temperature at which no crystalline quantum dots form without excitation under the same deposition conditions. …