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Semiconductor and Optical Materials Commons™

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2002

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Articles 1 - 9 of 9

Full-Text Articles in Semiconductor and Optical Materials

Study Of Transport Properties Of Inas Using Monte Carlo Simulation, Satyanadh Gundimada Oct 2002

Study Of Transport Properties Of Inas Using Monte Carlo Simulation, Satyanadh Gundimada

Electrical & Computer Engineering Theses & Dissertations

The present research is aimed at ascertaining the usefulness of InAs semiconductor material for single photon avalanche photo detectors operating in the Geiger mode at 2 μm wavelengths. InAs is considered as the material suitable for the purpose because of its less bandgap and lower effective mass of the electrons when compared to other semiconductor materials presently in use. Hence, theoretically transient transport properties of bulk InAs are superior and the velocity overshoot phenomena stronger. InAs is a relatively less explored material when compared to other materials like GaAs. The choice of the material is justified with thorough exploration of …

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Measurements Of Neutron Induced Surface And Bulk Defects In 4h Silicon Carbide, Kent T. Jones Mar 2002

Measurements Of Neutron Induced Surface And Bulk Defects In 4h Silicon Carbide, Kent T. Jones

Theses and Dissertations

Epitaxial n-type 4H-silicon carbide (SiC) is irradiated with 2 MeV protons to evaluate the dislocation damage effects on the optical and electrical characteristics of the material. The optical properties of the material are investigated using temperature-dependant photoluminescence (PL) and the effects of proton irradiation on the electrical properties are evaluated using current-voltage measurements and constant-voltage deep level transient spectroscopy (CV-DLTS). Subsequent high-temperature thermal annealing and recovery of the irradiated material is investigated over the temperature range of 900-1500°C. Proton-induced irradiation damage is apparent in the 4H-SiC material, affecting both the optical and electrical characteristics of the devices. The radiative behavior …

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Smart Structures For Control Of Optical Surfaces, D. Michael Sobers Jr. Mar 2002

Smart Structures For Control Of Optical Surfaces, D. Michael Sobers Jr.

Theses and Dissertations

The development of lightweight, large-aperture optics is of vital importance to the Department of Defense and the US Air Force for advancing remote sensing applications and improving current capabilities. Synthetic polymer optics offer weight and flexibility advantages over current generation glass mirrors, but require active control to maintain tight surface figure tolerances. This research explores the feasibility of using imbedded piezoelectric materials to control optical surfaces. Membrane-based and stiff piezo-controlled mirrors were constructed to develop and validate control techniques. Test results verified that surface control on the order of tens of wavelengths is possible using these systems.

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Characterization Of The Optical And Electrical Properties Of Proton-Irradiated 4h-Silicon Carbide, Heather C. Crockett Mar 2002

Characterization Of The Optical And Electrical Properties Of Proton-Irradiated 4h-Silicon Carbide, Heather C. Crockett

Theses and Dissertations

Epitaxial n-type 4H-silicon carbide (SiC) is irradiated with 2 MeV protons to evaluate the dislocation damage effects on the optical and electrical characteristics of the material. Semiconductor materials with a high tolerance to radiation fields have applications in several aerospace power and satellite systems. SiC is under investigation due to its potential for such space material applications. The optical properties of the material are investigated using temperature-dependent photoluminescence (PL) and the effects of proton irradiation on the electrical properties are evaluated using current-voltage measurements and constant-voltage deep level transient spectroscopy (CV-DLTS). Subsequent high-temperature thermal annealing and recovery of the irradiated …

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Photoelectrochemistry Of La3+ Doped Semiconductor Porous Films Sensitized By Ru(Bpy)2(Ncs)2 Dye, Li Zhang, Yan-Jie Ren, Sheng-Min Cai Feb 2002

Photoelectrochemistry Of La3+ Doped Semiconductor Porous Films Sensitized By Ru(Bpy)2(Ncs)2 Dye, Li Zhang, Yan-Jie Ren, Sheng-Min Cai

Journal of Electrochemistry

The La3+-doped TiO2 nanoparticles were prepared with hydrothermal method.The photoelectrochemical properties of La3+-doped TiO2 nanoporous-film electrode sensitized by Ru(bpy)2(NCS)2 were studied. The conversion efficiency of light to electricity and the energy conversion efficiencies were ineased with the depth of La3+-doped TiO2 nanoporous-film electrode.

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Stability And Optimization Of Photoconductivity In Thermally Vacuum Evaporated Indium (Iii) Sulfide Thin Films, Gustavo Rehder, Robert Engelken, Randy Stidham, Richard Tanner, Lee Ketchum, Anil Baral Jan 2002

Stability And Optimization Of Photoconductivity In Thermally Vacuum Evaporated Indium (Iii) Sulfide Thin Films, Gustavo Rehder, Robert Engelken, Randy Stidham, Richard Tanner, Lee Ketchum, Anil Baral

Journal of the Arkansas Academy of Science

Long term stability of photosensitivity versus time in indium (III) sulfide thin films thermally vacuum evaporated onto photocell-patterned printed circuit boards varies sensitively with several factors including contact metal type, contact metal diffusion and electromigration into the semiconductor, doping, and encapsulation method. Because of the significant photoconductivity and relative low toxicity and environmental impact of this compound semiconductor, it is important to better characterize these dependences toward commercial applications. We will report on measurements of photoconductivity vs. time as functions of such factors and evolving methods to stabilize this photoconductivity.

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Heat Transfer In A Thin Liquid Film In The Presence Of Electric Field For Non-Isothermal Interfacial Condition, Rama S.R. Gorla, Jorge E. Gatica, Bahman Ghorashi, Pijarn In-Eure, Larry W. Byrd Jan 2002

Heat Transfer In A Thin Liquid Film In The Presence Of Electric Field For Non-Isothermal Interfacial Condition, Rama S.R. Gorla, Jorge E. Gatica, Bahman Ghorashi, Pijarn In-Eure, Larry W. Byrd

Chemical & Biomedical Engineering Faculty Publications

Heat transfer enhancement in an evaporating thin liquid film using the electric field under non-isothermal interfacial condition is presented. A new mathematical model subjected to van der Waals attractive forces, the capillary pressure and the electric field is developed to describe the heat transfer enhancement in the evaporating thin liquid film. The effect of an electrostatic field on the curvature of the thin film, evaporative flux, pressure gradient distribution, heat flux, and heat transfer coefficient in the thin film is presented. The results show that the electric field can enhance heat transfer in the thin liquid film significantly. In addition, …

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Growth Dependant Properties Of Undoped And In-Situ Doped Chemically Deposited Cds Thin Films, Aaron John Reynolds Jan 2002

Growth Dependant Properties Of Undoped And In-Situ Doped Chemically Deposited Cds Thin Films, Aaron John Reynolds

Theses : Honours

This research project examines the growth dependant properties and composition of Cadmium Sulfide thin films produced by the Chemical Bath Deposition Method. The specific areas investigated are the effect of deposition temperature, the effect of an Indium dopant on the films structure and properties, and the effects of post deposition processing such as annealing in air on the film composition. The chemical bath deposition apparatus used has been refined and tested to ensure that the films were grown in a more efficient manner than previously, with more control of the influencing deposition parameters such as temperature. Films grown by the …

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Oxidation-Induced Stacking Fault In (100) And (111) Silicon Wafers, Mei Keat Liang Jan 2002

Oxidation-Induced Stacking Fault In (100) And (111) Silicon Wafers, Mei Keat Liang

Student Works (2000-2009)

Oxidation-induced stacking fault (OISF) dimension and density change on (100) and (111) wafers, as a result of repeated preferential etching were studied using AFM. optical microscope and angular polishing techniques. Density on (100) and (111) wafers is independent of surface removal up to 3.0µm. This indicates the single layer nature of OISF formed from the sand blasted wafer. Besides having higher density, OISFs from (100) wafer were longer than OISF from (111) wafer. OISF width increases linearly with surface removal however the length does not change significantly with surface removal. ln the OISF normal depth studies using angular polishing technique, …

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