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Semiconductor and Optical Materials Commons™

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2001

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Articles 1 - 9 of 9

Full-Text Articles in Semiconductor and Optical Materials

Electrical Activation Studies Of Ion Implanted Gallium Nitride, James A. Fellows Nov 2001

Electrical Activation Studies Of Ion Implanted Gallium Nitride, James A. Fellows

Theses and Dissertations

A comprehensive and systematic electrical activation study of Si-implanted GaN was performed as a function of ion implantation dose, anneal temperature, and implantation temperature. Additionally, Mg-implanted GaN was also investigated. Temperature-dependent Hall effect measurements and photoluminescence (PL) spectra were used to characterize the samples. GaN wafers capped with AlN were implanted with Si ions at doses ranging from 1x1013 to 5x1015 cm-2 and annealed from 1050 to 1350 °C. The optimum anneal temperature for samples implanted with the higher Si doses is around 1350 °C, exhibiting nearly 100% electrical activation efficiency. Exceptional mobilities and carrier concentrations were …

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Time-Resolved Photoluminescence Of Inas/Gainsb Quantum Well Lasers, Michael R. Mckay Jun 2001

Time-Resolved Photoluminescence Of Inas/Gainsb Quantum Well Lasers, Michael R. Mckay

Theses and Dissertations

In the world of semiconductor photonic device fabrication, one important objective may be to extract as much light as possible from the device. In these devices, photons are created when electrons recombine with holes by transitioning from a high-energy state to a lower one. Unfortunately, electron-hole recombination does not always result in the formation of a photon. There are three basic types of recombination: the first results in the formation of a photon and is called radiative recombination; and the second and third, known as Shockley-Read-Hall and Auger recombination, result in the heating of the device and do not produce …

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The Effect Of Preparation Condition On The Photoelectrochemical Performance Of Both The Pani Film And Tio2-Pani Composite Film On Au, Huai-Guo Huang, Hong-Ping Zhang, Zhi-Xin Zheng, Yan-Yan Xi, Ling-Ling Wu, Zhong-Hua Lin May 2001

The Effect Of Preparation Condition On The Photoelectrochemical Performance Of Both The Pani Film And Tio2-Pani Composite Film On Au, Huai-Guo Huang, Hong-Ping Zhang, Zhi-Xin Zheng, Yan-Yan Xi, Ling-Ling Wu, Zhong-Hua Lin

Journal of Electrochemistry

Both the PANI (polyaniline) film and TiO2-PANI composite film on the PATP(paminothiophenol)/Au substrate were obtained under different preparation condition by electrochemical methods, and their photoelectrochemical performances were alo studied. The resultsshowed that the photoelectrochemical performances of the films depend deeply on the comditionsof preparation. The self-assembling of PATP favors the adhesion of PANl. The partially-oxidizedPANI has a greater photoelectrochemical response than that of the reduced PANI and oxidized PANl. There is an optimum of film thickness for the photoelectrochemical performance of PANI film. Heat treating is in favor of the photoelectrochemical performance of TiO2, but decreases …

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Photoluminescence Of Single Quantum Well Structures In Gallium Arsenide, Christian A. Bartholomew Mar 2001

Photoluminescence Of Single Quantum Well Structures In Gallium Arsenide, Christian A. Bartholomew

Theses and Dissertations

The continued development of state-of the-art semiconductor technologies and devices by the United States Air Force and the Department of Defense requires accurate and efficient techniques to evaluate and model these new materials. Of particular interest to the Air Force are quantum well structures which can be used for small-scale laser sources in fly-by-light applications, as efficient infrared countermeasures to heat-seeking missiles, or as advanced seekers in optically guided missiles. This thesis provides the initial experimental procedures and data necessary to begin producing accurate yet robust models. Although carrier effective masses could not be evaluated using hot-electron photoluminescence, photoluminescence excitation …

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Optical And Etching Studies Of Native Aluminum Oxide Layers For Use In Microcavity Photonic Devices, William L. Bernhard Mar 2001

Optical And Etching Studies Of Native Aluminum Oxide Layers For Use In Microcavity Photonic Devices, William L. Bernhard

Theses and Dissertations

Optical communication and computing systems are required to meet future information transfer and processing needs. Microcavity devices serve as an enabling technology to implement and integrate optoelectronic systems. It is important to understand the optical and mechanical properties of materials utilize within microcavity devices. Only then is it possible to accurately model and analyze structures. Microcavity structures incorporating a high aluminum content AlGaAs layers are designed, grown, processed, and measured. The processing of these devices includes the conversion of high aluminum-content AlGaAs layers to native aluminum oxide (AlO) layers through the process of thermal oxidation. This selective conversion of microcavity …

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Numerical Study Of Optical Delay In Semiconductor Multilayer Distributed Bragg Reflector And Tunable Microcavity Structures, Michael I. K. Etan Mar 2001

Numerical Study Of Optical Delay In Semiconductor Multilayer Distributed Bragg Reflector And Tunable Microcavity Structures, Michael I. K. Etan

Theses and Dissertations

The Air Force has a growing need for the greater bandwidth, speed, and flexibility offered by optical communication links. Future space systems and airborne platforms will most likely use optical signals for efficient power transmission and to minimize the possibility of spoofing and eavesdropping. Tunable optical delays play an important role in the implementation of free space optical communication links. The primary challenge in implementing these systems is the active maintenance of coherent wave fronts across the system's optical aperture. For space applications, this aperture may he hundreds of meters in diameter. Spatial segmentation of a large aperture into smaller …

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The Photoelectrochemistry Of Tio2-Polyaniline Composite Film, Huai-Guo Huang, Zhi-Xin Zheng, Jin Luo, Hong-Ping Zhang, Ling-Ling Wu, Zhong-Hua Lin Feb 2001

The Photoelectrochemistry Of Tio2-Polyaniline Composite Film, Huai-Guo Huang, Zhi-Xin Zheng, Jin Luo, Hong-Ping Zhang, Ling-Ling Wu, Zhong-Hua Lin

Journal of Electrochemistry

A TiO2 and polyaniline (PANI) composite film was obtained by electrochemical methods. The SEM image of the composite film showed that the PANI film is almost completely covered with TiO2 efficiency. The spectra of photocurrent for the TiO2-PANI composite film were different from these of TiO2 film photosensitized by PANI. The bandgap energy of TiO2 film on partially oxidized PANI film was determined as 3.0 eV by the threshold energy of photocurrent band for TiO2. The spectra of photocurrent for partially oxidized PANI film electrode suggested that it has the characteristics of …

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Optical Properties Of Wide Band Gap Indium Sulphide Thin Films Obtained By Physical Vapor Deposition, N. Barreau, S. Marsillac, J. C. Bernède, T. Ben Nasrallah, S. Belgacem Jan 2001

Optical Properties Of Wide Band Gap Indium Sulphide Thin Films Obtained By Physical Vapor Deposition, N. Barreau, S. Marsillac, J. C. Bernède, T. Ben Nasrallah, S. Belgacem

Electrical & Computer Engineering Faculty Publications

Thin films of indium sulphide containing oxygen have been synthesized following a dry physical process. The constituents are deposited by thermal evaporation on glass substrates and then annealed under argon flow. Polycrystalline β-In2S3 containing oxygen thin films are obtained as soon as the temperature of annealing is between 623 and 723 K. In this paper, these β-In2S3 thin films have optically been studied. The optical band gap is direct. Its value is not dependent on the temperature of annealing. It is about 2.8 eV, which is higher than that of β-In2S3 …

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Effects Of Argon Dilution Of Silane On The Optical Properties And Surface Morphology Of Hydrogenated Amorphous Silicon, Choon Kheam Lim Jan 2001

Effects Of Argon Dilution Of Silane On The Optical Properties And Surface Morphology Of Hydrogenated Amorphous Silicon, Choon Kheam Lim

Student Works (2000-2009)

Hydrogenated amorphous silicon (a.Si:H) was prepared using the d.c plasma grow discharge system. Two sets of samples were prepared and studied. The first set of samples referred to as the high argon dilution films were prepared from the discharge of pure silane at flow-rate of 5sccm and silane at the same flow-rate diluted in argon at flow-rates of 5, 10 and 15sccm. Similarly, the second set of sample referred to as the low argon dilution films were prepared from the discharge of pure silane at flow-rate of20sccm and silane at the same flow-rate diluted in argon at the flow-rates mentioned …

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