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Semiconductor and Optical Materials Commons™

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1999

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Articles 1 - 6 of 6

Full-Text Articles in Semiconductor and Optical Materials

Electrical And Optical Characterization Of Intrinsic And Ion-Implantation Induced Defects In 6h- And 4h-Sic, Michael B. Scott Dec 1999

Electrical And Optical Characterization Of Intrinsic And Ion-Implantation Induced Defects In 6h- And 4h-Sic, Michael B. Scott

Theses and Dissertations

Deep level transient spectroscopy (DLTS), Hall effect, and cathodolummescence (CL) measurements are used to characterize the intrinsic and ion-implantation induced defects in high-temperature (475 and 500 °C) ion-implanted epitaxial n-type 6H- and 4H-SiC, ion-implanted with Cr, Mg, Ar, N, and P atoms. Comparison of room-temperature and high-temperature ion-implanted 6H-SiC:Mg and :Cr indicate the significance of high-temperature ion implantation on the activation of the ion-implanted atoms and damage-recovery of the crystalline lattice. The effects of high-temperature annealing on both damage-recovery and implanted ion activation are detected and analyzed, from 1200 to 1800 °C. Trap parameters of both damage-related and species-related defects …

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Photoelectrochemical Studies On The Tio2 Nanostructured Porous Film Sensitized By Cyanine Dye, Li Zhang, Mai-Zhi Yang, Xue-Bin Qiao, Yan-Zhong Hao, En-Qing Gao, Sheng-Min Cai Nov 1999

Photoelectrochemical Studies On The Tio2 Nanostructured Porous Film Sensitized By Cyanine Dye, Li Zhang, Mai-Zhi Yang, Xue-Bin Qiao, Yan-Zhong Hao, En-Qing Gao, Sheng-Min Cai

Journal of Electrochemistry

The photoelectrochemical behaviors of the TiO2 nanostructured porous film sensitized by cyanine dye were investigated in this paper. The results showed that the excitaed state level matched the conduction band edge of TiO2 nanoparticle. Therefore the sensitization of the dye can increase the photocurrent intensity of the TiO2 nanostructured electrode obviously and results in a red-shift of optical absorption from the ultra-violet region to the visible. As a result, the light-to-electricity conversion efficiency was improved evidently, the maximum value of IPCE has reached 12.1%.

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Evaluation Of The Transport Properties Of Gasb For Bipolar Applications Through Monte Carlo Simulations, Damayanthi Palaniappan Oct 1999

Evaluation Of The Transport Properties Of Gasb For Bipolar Applications Through Monte Carlo Simulations, Damayanthi Palaniappan

Electrical & Computer Engineering Theses & Dissertations

GaAs is currently the semiconductor material of choice for high speed, low power applications. Its electronic transport properties are superior to almost all other semiconductors. It is also used in a variety of bipolar applications such as photodetectors and photo-mixers. However, as is well known, the hole mobility and related transport parameters of GaAs are not very good. This is a serious drawback, and poses a potential problem for all applications involving bipolar conductivity. In order to increase the high :frequency limits and high-speed capability of bipolar devices, the choice of an alternative material, therefore, becomes necessary. An important first …

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Low-Temperature Molecular Beam Epitaxy Of Gaas: A Theoretical Investigation Of Antisite Incorporation And Reflection High-Energy Diffraction Oscillations, K. Natarajan, Rama Venkat, Donald L. Dorsey May 1999

Low-Temperature Molecular Beam Epitaxy Of Gaas: A Theoretical Investigation Of Antisite Incorporation And Reflection High-Energy Diffraction Oscillations, K. Natarajan, Rama Venkat, Donald L. Dorsey

Electrical & Computer Engineering Faculty Research

Surface dynamics dominate the incorporation of charged, As+Ga, and neutral, As0Ga, antisite arsenic, and the temporal variation of reflection high-energy electron diffraction(RHEED) intensity in the low-temperature molecular beam epitaxy of (100) gallium arsenide(GaAs). A rate equation model is proposed which includes the presence and dynamics of a physisorbed arsenic (PA) layer riding the growth surface. The PA layer dictates the incorporation and concentration of As+Ga and As0Ga. Additionally, it influences the RHEED oscillations (ROs) behavior and the RO’s dependence on its coverage through its contribution to the reflected intensity. The model results for the dependence of As+Ga and As0Ga concentrations …

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Output Control Of Vertical Microcavity Light Emitting Device, James A. Lott Apr 1999

Output Control Of Vertical Microcavity Light Emitting Device, James A. Lott

AFIT Patents

An improved intracavity sensor based output power control for microcavity light emitting devices. An improved phototransistor transducer is both configured and physically disposed so that it passively transmits the spurious optical energy output of the microcavity light emitting device while simultaneously generating a light determined electrical signal of easily used large magnitude that is nearly free of error. The base-collector region of the transistor is disposed with a quantum well absorbing layer and produces a signal responsive to a selected emission wavelength. The configuration of the optical energy communicating transducer is arranged so that it is improved in sensitivity and …

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Electrical Characterization Of Ion-Implanted 4h-Silicon Carbide, Christian P. Morath Mar 1999

Electrical Characterization Of Ion-Implanted 4h-Silicon Carbide, Christian P. Morath

Theses and Dissertations

Electrical characterization has been performed on ion-implanted p-type 4H-SiC to assess the activation efficiency and implantation-related damage recrystallization with the intention of developing an implantation/annealing scheme. Low doped (Na - Nd = 5x10(exp 15)/cu cm) epitaxial p-type layers grown by MOCVD were implanted with Al or B at doses ranging from 1x10(exp 13) to 1x10(exp 14)/sq cm at room temperature or 500 deg. C. The electrical technique of Temperature Dependent Hall Effect (TDHE) indicated that Al and B act as shallow acceptors 4H-SiC with ionization energies of ^252 and ^285 meV, respectively. The highest activation efficiency for Al and B …

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