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1997

Articles 1 - 10 of 10

Full-Text Articles in Semiconductor and Optical Materials

Measurement Of Ultrafast Carrier Recombination Dynamics In Mid-Infrared Semiconductor Laser Material, William T. Cooley Dec 1997

Measurement Of Ultrafast Carrier Recombination Dynamics In Mid-Infrared Semiconductor Laser Material, William T. Cooley

Theses and Dissertations

Shockley-Read-Hall, radiative, and Auger recombination rates in mid-infrared laser structures are measured and reported using time resolved photoluminescence (TRPL) frequency upconversion. The mid-IR lasers studied were actual InAsSb/InAlAsSb multiple-quantum-well (MQW) diode lasers emitting near 3.3 micrometers which were previously characterized for laser performance. This effort extends the initial studies and reports on the carrier recombination dynamics. Shockley-Read-Hall, radiative and Auger recombination rates at low temperature (77 K) were measured and found to be ASRH ≈ 10 x 107sec-1, Brad ≈ 2 x 10-10 cm3sec-1 and CAuger < 10-29 cm6 …

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Photoluminescence Of Photoelectrochemically Etched N+-Si, Guozheng Li, Chengqian Zhang, Xiumei Yang Nov 1997

Photoluminescence Of Photoelectrochemically Etched N+-Si, Guozheng Li, Chengqian Zhang, Xiumei Yang

Journal of Electrochemistry

PS layer on n+-Si with (111) orientation prepered by means of photoelectrochemically etched has photo-luminescent (PL) ability like PS layer on usual n-Si. The data of PL spectra and quenching are given.

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Gallium Desorption Behavior At Algaas/Gaas Heterointerfaces During High-Temperature Molecular Beam Epitaxy, K. Mahalingam, D. L. Dorsey, K. R. Evans, Rama Venkat Aug 1997

Gallium Desorption Behavior At Algaas/Gaas Heterointerfaces During High-Temperature Molecular Beam Epitaxy, K. Mahalingam, D. L. Dorsey, K. R. Evans, Rama Venkat

Electrical & Computer Engineering Faculty Research

A Monte Carlo simulation study is performed to investigate the Ga desorption behavior during AlGaAs-on-GaAs heterointerface formation by molecular beam epitaxy. The transients in the Ga desorption rate upon opening the Al shutter are shown to be associated with the concurrent reduction in the V/III flux ratio. Monte Carlo simulations employing a constant V/III flux ratio yield a “steplike” variation in the Ga desorption rate with the resulting interfaces closer in abruptness to the ideal AlGaAs-on-GaAs interface. Further details on the stoichiometry of the interface and its relationship with predicted Ga desorption profiles is presented.

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Experimental Investigation Of Nonlinear Dynamics In Single Mode Semiconductor Laser Diodes With Phase Conjugate Feedback, Gordon T. Hengst Aug 1997

Experimental Investigation Of Nonlinear Dynamics In Single Mode Semiconductor Laser Diodes With Phase Conjugate Feedback, Gordon T. Hengst

Theses and Dissertations

The semiconductor laser diode offers a unique system to investigate nonlinear dynamics when optical feedback is applied. Although there is extensive research of laser diodes with optical feedback from normal dielectric mirrors, very little has been done experimentally to analyze the effects of degenerate phase conjugate feedback from a BaTiO3 crystal. This research experimentally investigated the dynamics of a single-mode laser diode with weak phase conjugate feedback using both the self-pumped and double phase conjugate geometries. The experimental results validated a mathematical model which numerically evaluates the Lang-Kobayahsi coupled differential equations. The model simulated the nonlinear behavior of a …

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Electroluminescence Of Photoelectrochemically Etched N+-Si, Guozheng Li, Chengqian Zhang, Xiumei Yang May 1997

Electroluminescence Of Photoelectrochemically Etched N+-Si, Guozheng Li, Chengqian Zhang, Xiumei Yang

Journal of Electrochemistry

Porous silicon with micrometer size pores, which is made on n+-Si by photoelectrochemically etched, has electroluminescent property. Each monochromic intensity and wavelength range of luminescent spectra depend on polarized potential. The intersity and the stability of cathodic electroluminescence is high than those of anodic one. Voltammetric behavior before quenching indicated that the electrochemical reactions of some surface species are involved in except the reduction of S2O82-, which leads to radiative recombination. The energy band diagram based on n+-Si(Eg=1.1 eV)/PS(Eg=1.8 eV) junction is proposed.

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Thin Film Deposition Of Silicon For Solar Cell Applications, Sailesh Kumar, Roger M. Hawk Jan 1997

Thin Film Deposition Of Silicon For Solar Cell Applications, Sailesh Kumar, Roger M. Hawk

Journal of the Arkansas Academy of Science

Thin films of silicon have been formed using a patented electrostatic deposition method which utilizes charged particle motion in an electric field. After deposition, the films are heat treated for varying times and temperatures in a programmable furnace maintained under a purified argon atmosphere. X-ray diffraction (XRD) confirmed that these films were polycrystalline in nature. These films were found to have grain sizes of about 50 microns. Solar cells were fabricated using these large grained polycrystalline silicon films by sputtering pure gold as both front and back contacts. The cells have shown efficiencies of 1.8%. This paper reports on the …

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Investigation Of The Optical Properties Of Ordered Semiconductor Materials, Jack E. Mccrae Jr. Jan 1997

Investigation Of The Optical Properties Of Ordered Semiconductor Materials, Jack E. Mccrae Jr.

Theses and Dissertations

Optical studies have been conducted upon CdGeAs2 and ZnGeP2, two of the most promising semiconductors being developed for mid-infrared non-linear optics applications. These experiments included photoluminescence (PL) studies of both compounds as well as photoreflectance (PR) measurements upon CdGeAs2. In addition, Hall effect measurements were carried out upon CdGeAs2, to aid in interpretation of the optical data. PL was measured as a function of laser power, sample temperature, and crystal orientation for CdGeAs2. One broad weak peak near 0.38 eV, and another somewhat narrower and often far brighter peak near 0.57 …

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Preparation Of Powder Precursors And Evaporation Of Photoconductive Indium Sulfide Films, Chris Barber, Robert Engelken, Brandon Kemp, Wasim Aleem, Imran Khan, Chris Edrington, Michael Buck, Clayton Workman, Anup Thapa, Tom Jakobs Jan 1997

Preparation Of Powder Precursors And Evaporation Of Photoconductive Indium Sulfide Films, Chris Barber, Robert Engelken, Brandon Kemp, Wasim Aleem, Imran Khan, Chris Edrington, Michael Buck, Clayton Workman, Anup Thapa, Tom Jakobs

Journal of the Arkansas Academy of Science

We have demonstrated significant photoconductance in indium sulfide thin films prepared by thermal vacuum evaporation ofIn2$3 powders synthesized in-house by chemical precipitation ofInCl3 or In(CH3COO)3, and (NH4)2S or Na2S. The Delta G lambda/Gdark values have been as high as 0.1 in the initial unoptimized films. Excess sulfur (via a mixture of polysulfide and sulfide ions in the synthesis bath) appears to be important in achieving reproducible and large photoconductivities. In2S3 is particularly attractive as a lower toxicity alternative to CdS in optoelectronic applications such as photovoltaic and photoconductive cells.

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Optical And Electrical Properties Of Cualse² Thin Films Obtained By Selenization Of Cu/Al/Cu... Al/Cu Layers Sequentially Deposited, J. C. Bernède, S. Marsillac, C. El Moctar, A. Conan Jan 1997

Optical And Electrical Properties Of Cualse² Thin Films Obtained By Selenization Of Cu/Al/Cu... Al/Cu Layers Sequentially Deposited, J. C. Bernède, S. Marsillac, C. El Moctar, A. Conan

Electrical & Computer Engineering Faculty Publications

Optical and electrical properties of CuAlSe2 thin films obtained by selenization of Cu/Al/Cu...Al/Cu layers sequentially deposited have been investigated. It is shown that the expected energy gap (2.67 eV) is measured for well crystallized films, whereas a slightly higher value is measured for films not so well crystallized. Raman diffusion also shows differences between well and poorly crystallized films with peaks corresponding to the reference powder for the former samples. A p-type conductivity is found whatever the crystalline quality of the samples. The conductivity of the films depends also strongly on their crystalline properties. When the films are badly …

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Cualse² Thin Films Obtained By Chalcogenization, S. Marsillac, K. Benchouk, C. El Moctar, J. C. Bernède, J. Pouzet, A Khellil, M. Jamali Jan 1997

Cualse² Thin Films Obtained By Chalcogenization, S. Marsillac, K. Benchouk, C. El Moctar, J. C. Bernède, J. Pouzet, A Khellil, M. Jamali

Electrical & Computer Engineering Faculty Publications

CuAlSe2 thin films have been synthesized by chalcogenization of thin Cu and Al layers sequentially deposited by evaporation under vacuum. It is shown that CuAlSe2 films are obtained with some Cu2-δSe and Se phases present at the surface. These surface phases are suppressed by annealing under vacuum and by chemical etching in a KCN solution. At the end of the process, the XRD spectrum demonstrates that textured CuAlSe2 films have been obtained with preferential orientation of the crystallites along the (112) direction. The gap of the films is 2.7 eV as expected. The …

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