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1992

Articles 1 - 9 of 9

Full-Text Articles in Semiconductor and Optical Materials

Phase Conjugation In Optical Fiber Via Stimulated Brillouin Scattering With Feedback From A Barium Titanate Crystal, Patrick R. Emmert Dec 1992

Phase Conjugation In Optical Fiber Via Stimulated Brillouin Scattering With Feedback From A Barium Titanate Crystal, Patrick R. Emmert

Theses and Dissertations

The goal of this thesis was to obtain phase conjugation in multi-mode optical fiber via stimulated Brillouin scattering (SBS) with the aid of a barium titanate crystal which formed a phase conjugate cavity for the Stokes beam. SBS was demonstrated but the SBS threshold was unaffected by the presence of the barium titanate crystal and no evidence for the presence of phase conjugation in the optical fiber was obtained.

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Cathodoluminescence Spectroscopy Of Zinc Germanium Phosphide Zngep2, Michael R. Gregg Dec 1992

Cathodoluminescence Spectroscopy Of Zinc Germanium Phosphide Zngep2, Michael R. Gregg

Theses and Dissertations

Zinc Germanium Phosphide (ZnGeP2) is a nonlinear semiconductor suitable for use as a laser tuning element over the two to six micron wavelength range. Although this crystal has been studied in the past, its luminescent properties are not yet well understood. In this present study, ZnGeP2 has been examined using cathodoluminescence spectroscopy (CL). Specifically, the spectral dependence of the CL was obtained as a function of electron beam energy, beam current and temperature. The resulting CL was found to be polarized with a peak structure that was dependent on the polarization. This peak structure observed by CL …

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The Effect Of Oxide Layers And Boron Doping On The Breakdown Of High Purity Silicon, Brian A. Hibbeln Dec 1992

The Effect Of Oxide Layers And Boron Doping On The Breakdown Of High Purity Silicon, Brian A. Hibbeln

Theses and Dissertations

For many applications such as lasers and radar drive circuits, there exists a need for solid state high voltage, high current switches. Current gaseous discharge switches fail to satisfy the ruggedness, reliability, and lifetime requirements of today's systems. A promising alternative is the Photoconductive Semiconductor Switch (PCSS). The limiting factor in the operation of these switches is the occurrence of breakdown through channels formed slightly below the surface. A theory on the formation of these channels is presented based upon band bending at the metal-semiconductor interface, a nonhomogeneous space charge due to irregular trap distributions, and thermal runaway in localized …

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Processability Of Polythiophene Thin Films By Ultraviolet Photo Bleaching, Derek D. Fletcher Dec 1992

Processability Of Polythiophene Thin Films By Ultraviolet Photo Bleaching, Derek D. Fletcher

Theses and Dissertations

Materials possessing strong ��(3) optical properties such as Polythiophene are sought for the production of optical switches. Polythiophene thin films produced by plasma enhanced CVD show a surface rms roughness of 10-15 angstroms over single square micron areas which is acceptable for wave guiding in the near IR. This research investigates permanently changing the optical properties of such a thin film by exposure to UV radiation (254 nm, 35 mW/cm2), known as photo bleaching, in hope of creating a refractive index boundary for use in total internal reflection. After 60 minutes exposure the refractive index shows …

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Excitation And De-Excitation Mechanisms Of Er-Doped Gaas And Algaas, David W. Elsaesser Dec 1992

Excitation And De-Excitation Mechanisms Of Er-Doped Gaas And Algaas, David W. Elsaesser

Theses and Dissertations

Electrical and optical characterization have been performed on GaAs and AlxGa1-xAs samples doped with Er either by ion implantation or during Molecular Beam Epitaxial (MBE) growth. Deep Level Transient Spectroscopy (DLTS) and Temperature-Dependent Hall Effect (TDH) measurements indicated the presence of two hole traps in Er-doped GaAs, at 35 and 360 meV above the valence band maximum. The former (shallower) center was thought to be due to Er substituting for a Ga atom (ErGa) and giving rise to an isoelectronic impurity potential. The second center was attributed to an Er atom occupying an interstitial …

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A Novel Technique For Deep Level Characterization Of High-Resistivity Semiconductor Materials, Sridhar Panigrahi Jul 1992

A Novel Technique For Deep Level Characterization Of High-Resistivity Semiconductor Materials, Sridhar Panigrahi

Electrical & Computer Engineering Theses & Dissertations

An improved photo induced current transient spectroscopy (PICTS) technique is developed for studying deep level parameters in high-resistivity semiconductor materials. A new digital data acquisition approach and improvement in the cryogenics of the system have enabled us, for the first time in our laboratory, to detect CuA level in a copper doped silicon compensated gallium arsenide (GaAs:Si:Cu) sample. The digital approach improves both the signal to noise ratio (S/N) and the efficiency of the system. Also, multiple PICTS spectra in a single thermal cycle can be obtained. In the present work, various doped and undoped gallium arsenide ( GaAs) and …

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A Response Surface Methodology Study Of Ferroelectric Memory Devices, Kevin C. Smith Mar 1992

A Response Surface Methodology Study Of Ferroelectric Memory Devices, Kevin C. Smith

Theses and Dissertations

Fatigue in ferroelectric memory devices was studied. The application of fatigue pulses to a ferroelectric sample was controlled by the RT-66 Ferroelectric Tester, a variation of the Sawyer-Tower circuit. The RT-66 also controlled data collection following the fatiguing process. Seven variables were evaluated for their potential- affect on fatigue. A sequence of fatigue tests, which varied the settings of these variables, was developed using Response Surface Methodology (RSM) experimental designs. Least-squares regression models were developed once a particular RSM set of design experiments was completed. These models were evaluated using RSM tools, and the analysis of these models allowed the …

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Application Of Stable Operating Criterion To Grating Tuned Strong External Feedback Semiconductor Lasers, Haiyin Sun, Malay K. Mazumder Jan 1992

Application Of Stable Operating Criterion To Grating Tuned Strong External Feedback Semiconductor Lasers, Haiyin Sun, Malay K. Mazumder

Journal of the Arkansas Academy of Science

Stability analysis is done by applying criterion dnQ((o)/cfco>0 for grating tuned strong external feedback semiconductor lasers. The resulting stable and unstable operating ranges agree well with experiment results.

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Techniques For Efficiency Calibration Of Photon Detectors For X-Rays And Low Energy Gamma Rays, Rahul Mehta Jan 1992

Techniques For Efficiency Calibration Of Photon Detectors For X-Rays And Low Energy Gamma Rays, Rahul Mehta

Journal of the Arkansas Academy of Science

No abstract provided.

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