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Articles 1 - 6 of 6
Full-Text Articles in Semiconductor and Optical Materials
Low Temperature Photoluminescence Study Of Holmium And Thulium Implanted Into Iii-V Semiconductors And Silicon, Eric Silkowski
Low Temperature Photoluminescence Study Of Holmium And Thulium Implanted Into Iii-V Semiconductors And Silicon, Eric Silkowski
Theses and Dissertations
Low temperature photoluminescence studies were performed on holmium implanted into InP, GaAs, and Si; and thulium implanted into AlGaAs, GaAs, and Si. Samples were annealed by the conventional furnace and rapid thermal techniques. None of the characteristic 4f emissions of holmium were found in the spectral region of .73 to 1.55 eV. AlGaAs:Tm showed strong thulium emissions in the .93 to 1.03 eV region. These emissions were studied and compared to those in GaAs:Tm. Low and high temperature annealed samples showed evidence of trivalent Tm centers. Temperature dependence studies showed that thulium 4f emissions were present above 200 K but …
Angle Of Arrival Detection Through Artificial Neural Network Analysis Of Optical Fiber Intensity Patterns, Scott Thomas
Angle Of Arrival Detection Through Artificial Neural Network Analysis Of Optical Fiber Intensity Patterns, Scott Thomas
Theses and Dissertations
The optical sensors of United States Air Force reconnaissance vehicles, such as satellites, are subject to temporary or permanent blinding from hostile (or threat) laser radiation. By detecting and determining the angle of arrival (AOA) of the hostile radiation, the reconnaissance vehicle may be able to protect its optical sensors by taking evasive maneuvers or by shutting down the optical sensor (such as closing a shutter) until the threat has passed. In addition, the vehicle can relay information to its ground terminal allowing the intelligence community to determine the source of the hostile laser radiation. This thesis demonstrated that an …
Fluorescent Lifetime Measurements Of Rare Earth Elements In Gallium Arsenide, Danny J. Topp
Fluorescent Lifetime Measurements Of Rare Earth Elements In Gallium Arsenide, Danny J. Topp
Theses and Dissertations
Lifetime measurements of the excited states of three GaAs semiconductors doped with the rare earth elements Erbium (ER), Praseodymium (Pr) , and Thulium (Tm) has been studied using a pulsed nitrogen laser and germanium detector. The measurements were made with an experimental set up with a system response time of 0.34 micro seconds. A 330 milliwatt nitrogen laser with a wavelength of 3370 angstrums was used to excite transitions of the rare earth elements.
Characterization Of Barium Titanate As An Optical Amplifier, George A. Vogel
Characterization Of Barium Titanate As An Optical Amplifier, George A. Vogel
Theses and Dissertations
The introduction of two-beam coupling in photorefractive materials has resulted in an extensive amount of research into their use as optical processing/computing elements. This dissertation develops the theoretical equations for two-beam coupling in barium titanate as an optical amplifier. One of the factors which limits the optical gain in photorefractive crystals is the loss of pump beam power to the amplification of parasitic light (beam fanning). This parasitic light is produced by light scattered from the pump beam by imperfections on both the crystal face and within the crystal. Through the analysis of signal and noise amplification as functions of …
Optical And High Electric Field Effects In Bulk Gallium Arsenide Switches, Randy Roush
Optical And High Electric Field Effects In Bulk Gallium Arsenide Switches, Randy Roush
Electrical & Computer Engineering Theses & Dissertations
During the past few years, bulk, photoconductive switching has become recognized as a viable topic for future research on moderate and high power switches. The two-pulse, or BOSS, concept relies on an excitation laser pulse, and a separate de-excitation pulse in conjunction with silicon doped, copper compensated, GaAs to create a variable temporal electrical pulse width. The research contained in this document provides information concerning the feasibility of the BOSS concept, as the switch is scaled to larger sizes, and higher voltage and current. The major concern will be the high voltage and current effects. The absorption length for 1064 …
Influence Of Copper Doping On The Performance Of Optically Controlled Gaas Switches, St. T. Ko, V. K. Lakdawala, K. H. Schoenbach, M. S. Mazzola
Influence Of Copper Doping On The Performance Of Optically Controlled Gaas Switches, St. T. Ko, V. K. Lakdawala, K. H. Schoenbach, M. S. Mazzola
Electrical & Computer Engineering Faculty Publications
The influence of the copper concentration in silicon-doped gallium arsenide on the photoionization and photoquenching of charge carriers was studied both experimentally and theoretically. The studies indicate that the compensation ratio (NCu/NSi) is an important parameter for the GaAs:Si:Cu switch systems with regard to the turn-on and turn-off performance. The optimum copper concentration for the use of GaAs:Si:Cu as an optically controlled closing and opening switch is determined.