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Articles 1 - 11 of 11
Full-Text Articles in Semiconductor and Optical Materials
Ge/Sige Quantum Wells: Material For The Post-Moore Era, Troy Alexander Hutchins-Delgado
Ge/Sige Quantum Wells: Material For The Post-Moore Era, Troy Alexander Hutchins-Delgado
Optical Science and Engineering ETDs
This dissertation demonstrates high-quality germanium quantum wells on a 200 mm silicon wafer platform, enabling novel device possibilities. Partnering with a commercial silicon-germanium epitaxy supplier, we obtained shallow, undoped germanium quantum wells with high-crystalline quality, confirmed through x-ray diffraction, secondary ion mass spectroscopy, high-resolution scanning transmission electron microscopy, and energy dispersive x-ray spectroscopy. Hall bar devices fabricated on single quantum wells revealed that surface preparation can tune transport properties while maintaining peak mobilities around 105 cm2V−1s−1. Manganese-germanide spintronic contacts were integrated via solid-state reaction, with contact quality assessed through Schottky diodes, transfer length …
Fabrication And Characterization Of A Monolithic Photonic Integrated Circuit With High-Aspect Ratio Photonic Device Structures, Sami A. Nazib
Fabrication And Characterization Of A Monolithic Photonic Integrated Circuit With High-Aspect Ratio Photonic Device Structures, Sami A. Nazib
Optical Science and Engineering ETDs
The focus of this work was to create a process to fabricate an InP-based Photonic Integrated Circuit (PIC). The design of the PIC required the photonic components of this device to be created by deep etching of an epitaxially-grown multilayer structure. Therefore, a novel dry etching process was developed to produce very high aspect- ratio (HAR) features. This process not only involved the development of dry etch chemistry but also the engineering of a metal mask structure. The next step of the challenge was to use a polymer-based material that would have two functions: cladding for the etched photonic components …
Optical Responses Of Hybrid Electromagnetic Nanostructures, Dominic Bosomtwi
Optical Responses Of Hybrid Electromagnetic Nanostructures, Dominic Bosomtwi
Optical Science and Engineering ETDs
Fano resonances result from the interference between a broad background and a narrow state, producing asymmetric scattering profiles. Under specific conditions, destructive interference collapses the Fano resonance width, leading to bound states in the continuum (BICs) that localize light within a nanostructure while maintaining an infinitely high-quality factor (Q-factor).
This dissertation explores the design of nanostructures with multilayer hybrid plasmonic-dielectric metasurfaces using full-wave numerical simulations, facilitating multiple Fano resonances and BICs. By adjusting nanoantenna dimensions, multiple modes are excited at plasmonic-dielectric interfaces, leading to strong interactions and hybridization of energy levels, manifested as Rabi splitting.
These findings enable advancements in …
Mbe Growth Of Sb Based Alloys Using Interfacial Misfit Arrays For Mwir Devices, Fatih Furkan Ince
Mbe Growth Of Sb Based Alloys Using Interfacial Misfit Arrays For Mwir Devices, Fatih Furkan Ince
Optical Science and Engineering ETDs
This thesis explores the monolithic integration of antimonide based narrow bandgap semiconductors on commercially available substrates for mid-wave infrared (MWIR) devices. The research focuses on the integration and growth of antimonide based alloys using the interfacial misfit dislocation (IMF) arrays to enhance the cost efficiency, manufacturability and performance. The study particularly investigates the relaxation mechanisms of antimonide alloys on InAs and InP substrates, assessing the impact of mismatch strain on the quality of epilayers. The IMF arrays are examined using high-resolution transmission electron microscopy (HR-TEM) and x-ray diffraction (XRD), revealing information about the effective strain relief mechanisms behind IMF arrays …
Carrier Dynamics In Green Iii-Nitride Leds Using Small-Signal Electroluminescence, Xuefeng Li
Carrier Dynamics In Green Iii-Nitride Leds Using Small-Signal Electroluminescence, Xuefeng Li
Optical Science and Engineering ETDs
Solid-state lighting has achieved significant success over the past two decades, but the low quantum efficiency of green LEDs (i.e., the “green gap”) remains a barrier to full red-green-blue (RGB) displays in numerous applications. Combating efficiency reduction in longer-wavelength LEDs requires understanding the relative roles of intrinsic effects (e.g., wave-function overlap, carrier-current density relationship, phase-space filling (PSF)) vs. extrinsic effects (e.g., material degradation due to increased defect density, compositional inhomogeneities, etc.). A systematic study of the carrier dynamics in InGaN/GaN LEDs is very important for understanding the origin of the green gap and for providing solutions to improve the efficiency …
Investigation Of Gaas Double Heterostructures For Photonic Heat Engines, Nathan Giannini-Hutchin
Investigation Of Gaas Double Heterostructures For Photonic Heat Engines, Nathan Giannini-Hutchin
Optical Science and Engineering ETDs
The creation of a laser cooled semiconductor device has been a long sought achievement. GaAs-based devices have emerged as a promising candidate for the realization of this goal. Efforts to improve the efficiency of such devices have enabled the material to exhibit external quantum efficiencies (EQE, a measure of the probability that an excitation leads to the emission of a photon) of 99.5\%. Despite this impressive feat, a laser coolable device remains elusive.
To investigate the obstacles to such a device, the material characteristics of GaAs-based double heterostructures (DHS) are theoretically and experimentally examined. Through this study, a GaAs $\vert$ …
Interferometric Lithography- An Approach To Large Area And Cost Effective Nanopatterning, Vineeth Sasidharan
Interferometric Lithography- An Approach To Large Area And Cost Effective Nanopatterning, Vineeth Sasidharan
Optical Science and Engineering ETDs
In this dissertation interferometric lithography is approached in two different ways to address two important constraints of nanopatterning. One approach solves the problem of scaling up interferometric lithography to wafer scale (4 inch or larger) area. Through the second approach we have developed a nanopatterning technique based on interferometric lithography by using an inexpensive (~$100) diode laser as source, making interferometric lithography a very cost-effective technique.
Wafer-scale large-area nanopatterning was developed using an amplitude grating mask as a grating beam splitter along with spatial averaging of laser intensity by wobbling. The longitudinal and transverse coherence issues both are eased by …
The Development Of All Solid-State Optical Cryo-Cooler, Junwei Meng
The Development Of All Solid-State Optical Cryo-Cooler, Junwei Meng
Optical Science and Engineering ETDs
This dissertation describes the development of an all solid-state optical cryo-cooler. Crystals of 10% wt. ytterbium-doped yttrium lithium fluoride (Yb3+:YLF) are used to cool an infrared HgCdTe sensor payload to an absolute temperature below 135 K, equivalent to delta T equal 138 K below ambient. This record level of cooling is accomplished with a single stage, in a completely vibration-free environment, with a corresponding cooling power of 190 mW. This milestone is made possible by the design and fabrication of an undoped YLF thermal link that efficiently shields the payload with a non-right angle kink from intense anti-Stokes …
Mid-Ir Optical Refrigeration And Radiation Balanced Lasers, Saeid Rostami
Mid-Ir Optical Refrigeration And Radiation Balanced Lasers, Saeid Rostami
Optical Science and Engineering ETDs
This dissertation reports recent advances in mid-infrared (mid-IR) optical refrigeration and Radiation Balanced Lasers (RBLs). The first demonstration of optical refrigeration in Ho:YLF and Tm:YLF crystals as promising mid-IR laser cooling candidates is reported. Room temperature laser cooling efficiency of Tm- and Ho-doped crystals at different excitation polarization is measured and their external quantum efficiency and background absorption are extracted. Complete characterization of laser cooling samples is obtained via performing detailed low-temperature spectroscopic analysis, and their minimum achievable temperature as well as conditions to achieve laser cooling efficiency enhancement in mid-IR are investigated. By developing a Thulium-doped fiber amplifier, seeded …
Algorithmic Multi-Color Cmos Avalanche Photodiodes For Smart-Lighting Applications, Md Mottaleb Hossain
Algorithmic Multi-Color Cmos Avalanche Photodiodes For Smart-Lighting Applications, Md Mottaleb Hossain
Optical Science and Engineering ETDs
Future smart-lighting systems are expected to deliver adaptively color-tunable and high-quality lighting that is energy efficient while also offering integrated visible-light wireless communication services. To enable these systems at a commercial level, inexpensive and fast sensors with spectral-sensing capability are required. CMOS-compatible silicon avalanche photodiodes (APDs) can be an excellent fit to this problem due to their excellent sensitivity, high speeds and cost effectiveness; however, color sensing is a challenge without resorting to expensive spectral filters, as done in commercially. To address this challenge, we have recently designed and modeled a novel CMOS-compatible dual-junction APD. The device outputs two photocurrents …
Vertical Transport Study Of Iii-V Type-Ii Superlattices, Zahra Taghipour
Vertical Transport Study Of Iii-V Type-Ii Superlattices, Zahra Taghipour
Optical Science and Engineering ETDs
Type-II strained layer superlattice (T2SL) semiconductors hold great promise for mid- and long-wavelength infrared photodetectors. While T2SL-based materials have advanced significantly in the last three decades, an outstanding challenge to improve the T2SLs is to understand the carrier transport and its limitations, in particular along the superlattice growth layers.
In this dissertation, an overview of the current state-of-the-art InAs/GaSb T2SLs is presented. Fundamental semiconductor device equations and transport properties, including miniband conduction and the drift-diffusion parameters, are reviewed, and the fundamental limiting factors in carrier's transport are discussed. Furthermore, the standard method of electron-beam-induced current technique to measuring these parameters …