Semiconductor and Optical Materials Commons^™

Growth And Characterization Of Silicon-Germanium-Tin Semiconductors For Future Nanophotonics Devices, Bader Saad Alharthi

Graduate Theses and Dissertations

The bright future of silicon (Si) photonics has attracted research interest worldwide. The ultimate goal of this growing field is to develop a group IV based Si foundries that integrate Si-photonics with the current complementary metal–oxide–semiconductor (CMOS) on a single chip for mid-infrared optoelectronics and high speed devices. Even though group IV was used in light detection, such as photoconductors, it is still cannot compete with III-V semiconductors for light generation. This is because most of the group IV elements, such as Si and germanium (Ge), are indirect bandgap materials. Nevertheless, Ge and Si attracted industry attention because they are …

Near Bandgap Two-Photon Excited Luminescence Of Inas Quantum Dots, Xian Hu

Graduate Theses and Dissertations

Semiconductor quantum dots (QDs) confine carriers in three dimensions, resulting in atomic-like energy levels as well as size-dependent electrical and optical properties. Self-assembled III-V QD is one of the most studied semiconductor QDs thanks to their well-established fabrication techniques and versatile optical properties. This dissertation presents the photoluminescence (PL) study of the InAs/GaAs QDs with both above bandgap continuous-wave excitation (one-photon excitation) and below-bandgap pulse excitation (two-photon excitation). Samples of ensemble QDs, single QD (SQD), and QDs in a micro-cavity, all grown by molecular beam epitaxy, are used in this study. Morphology of these samples was examined using atomic force …

Glucose Level Estimation Based On Invasive Electrochemical, And Non-Invasive Optical Sensing Methods, Sanghamitra Mandal

Graduate Theses and Dissertations

The purpose of this research is to design and fabricate sensors for glucose detection using inexpensive approaches. My first research approach is the fabrication of an amperometric electrochemical glucose sensor, by exploiting the optical properties of semiconductors and structural properties of nanostructures, to enhance the sensor sensitivity and response time. Enzymatic electrochemical sensors are fabricated using two different mechanisms: (1) the low-temperature hydrothermal synthesis of zinc oxide nanorods, and (2) the rapid metal-assisted chemical etching of silicon (Si) to synthesize Si nanowires. The concept of gold nano-electrode ensembles is then employed to the sensors in order to boost the current …

Design, Fabrication, And Characterization Of Novel Optoelectronic Devices For Near-Infrared Detection, Ahmad Nusir

Graduate Theses and Dissertations

Investigating semiconductor materials and devices at the nanoscale has become crucial in order to maintain the exponential development in today’s technology. There is a critical need for making devices lower in power consumption and smaller in size. Nanoscale semiconductor materials provide a powerful platform for optoelectronic device engineers. They own interesting properties which include enhanced photoconductivity and size-tunable interband transitions.

In this research, different types of nanostructures were investigated for optoelectronic devices: nanocrystals, nanowires, and thin-films. First, lead selenide nanocrystals with narrow bandgap were synthesized, size-tailored, and functionalized with molecular ligands for the application of uncooled near-infrared photodetectors. The devices …

Design, Fabrication, And Characterization Of All-Inorganic Quantum Dot Light Emitting Diodes, Ramesh Vasan

Graduate Theses and Dissertations

Quantum dot light emitting diodes are investigated as a replacement to the existing organic light emitting diodes that are commonly used for thin film lighting and display applications. In this, all-inorganic quantum dot light emitting diodes with inorganic quantum dot emissive layer and inorganic charge transport layers are designed, fabricated, and characterized. Inorganic materials are more environmentally stable and can handle higher current densities than organic materials. The device consists of CdSe/ZnS alloyed core/shell quantum dots as the emissive layer and metal oxide charge transport layer. The charge transport in these devices is found to occur through resonant energy transfer …

Phase Transitions In Monochalcogenide Monolayers, Mehrshad Mehboudi

Graduate Theses and Dissertations

Since discovery of graphene in 2004 as a truly one-atom-thick material with extraordinary mechanical and electronic properties, researchers successfully predicted and synthesized many other two-dimensional materials such as transition metal dichalcogenides (TMDCs) and monochalcogenide monolayers (MMs). Graphene has a non-degenerate structural ground state that is key to its stability at room temperature. However, group IV monochalcogenides such as monolayers of SnSe, and GeSe have a fourfold degenerate ground state. This degeneracy in ground state can lead to structural instability, disorder, and phase transition in finite temperature. The energy that is required to overcome from one degenerate ground state to another …

Investigation Of Nanomaterial Based Photovoltaic Panel Packaging Materials, Xingeng Yang

Graduate Theses and Dissertations

In this research, nanomaterial-based packaging materials for photovoltaic (PV) panels are investigated. A hydrophobic/anti-reflective surface coating which not only repels water from the top glass of a PV panel but at the same time reduces its light reflectance is investigated. COMSOL simulation results indicate that taller ellipsoid rod (aspect ratio = 5) reflects less light than shorter rod (aspect ratio = 0.5) in the desired spectrum for solar energy harvest from 400nm-700nm. The addition of a polymer layer on these ellipsoid rods broadens the light incident angle from 23° to 34°, from which light can be efficiently absorbed. Based on …

Structural And Elastic Properties Of Degenerate Sno Monolayers At Finite Temperature, Afsana Sharmin

Graduate Theses and Dissertations

Chalcogen-based layered superconductors with a litharge structure such as FeS and FeSe mono-layers undergo structural and superconducting phase transitions that are tunable by doping. Representing another material platform with a litharge structure but without valence d-electrons, SnO monolayers also display a structural ground state with a degenerate rectangular unit cell at zero temperature and a charge-tunable energy barrier that leads to a thermally-controllable structural phase change. Doped SnO monolayers with rectangular degenerate unit cells give rise to two-dimensional multiferroicity. Their two-dimensional elastic energy landscape adopts a basic analytic expression that is employed to discuss this structural transition. The results contained …

Modeling And Simulation Of Iii-Nitride-Based Solar Cells Using Nextnano®, Malak Refaei

Graduate Theses and Dissertations

Nextnano³ software is a well-known package for simulating semiconductor band-structures at the nanoscale and predicting the general electronic structure. In this work, it is further demonstrated as a viable tool for the simulation of III-nitride solar cells. In order to prove this feasibility, the generally accepted solar cell simulation package, PC1D, was chosen for comparison. To critique the results from both PC1D and Nextnano3, the fundamental drift-diffusion equations were used to calculate the performance of a simple p-n homojunction solar cell device analytically. Silicon was picked as the material for this comparison between the outputs of the two simulators as …

Infrared Energy Conversion In Plasmonic Fields At Two-Dimensional Semiconductors, Gregory Thomas Forcherio

Graduate Theses and Dissertations

Conversion of infrared energy within plasmonic fields at two-dimensional, semiconductive transition metal dichalcogenides (TMD) through plasmonic hot electron transport and nonlinear frequency mixing has important implications in next-generation optoelectronics. Drude-Lorentz theory and approximate discrete dipole (DDA) solutions to Maxwell’s equations guided metal nanoantenna design towards strong infrared localized surface plasmon resonance (LSPR). Excitation and damping dynamics of LSPR in heterostructures of noble metal nanoantennas and molybdenum- or tungsten-disulfide (MoS2; WS2) monolayers were examined by parallel synthesis of (i) DDA electrodynamic simulations and (ii) near-field electron energy loss (EELS) and far-field optical transmission UV-vis spectroscopic measurements. Susceptibility to second-order nonlinear frequency …

Investigation Of Fes2 Nanoparticles For Use In Optoelectronic And Thermoelectric Applications, Rick Tefal Eyi Nkoghe

Graduate Theses and Dissertations

Iron pyrite (FeS2) is the most abundant sulfide material on earth. This material has been widely investigated by researchers because of its optical properties. However, it has been difficult to produce High efficiency FeS2 based solar cells. This is due to many different impurities that arise when making the materials. The ability to synthesize pure pyrite FeS2 material is therefore critical for applications.

Pure Iron pyrite nanocrystals were synthesized using hot injection by mixing sulfur with an iron precursor in the presence of an amine. To improve the stability, shorter ligands replaced the native amines ligands. The stability of the …

Plasmon-Mediated Energy Conversion In Metal Nanoparticle-Doped Hybrid Nanomaterials, Jeremy Dunklin

Graduate Theses and Dissertations

Climate change and population growth demand long-term solutions for clean water and energy. Plasmon-active nanomaterials offer a promising route towards improved energetics for efficient chemical separation and light harvesting schemes. Two material platforms featuring highly absorptive plasmonic gold nanoparticles (AuNPs) are advanced herein to maximize photon conversion into thermal or electronic energy. Optical extinction, attributable to diffraction-induced internal reflection, was enhanced up to 1.5-fold in three-dimensional polymer films containing AuNPs at interparticle separations approaching the resonant wavelength. Comprehensive methods developed to characterize heat dissipation following plasmonic absorption was extended beyond conventional optical and heat transfer descriptions, where good agreement was …

Investigation Of The Optical Properties Of Pbse/Pbx Nanocrystals For Photodetector Applications, Haley Ann Morris

Graduate Theses and Dissertations

Lead selenide and lead selenide/lead sulfide core/shell nanocrystals were investigated for use in near infrared photodetectors. A colloidal synthesis method was used for both the core and core/shell configurations. The lead sulfide shell was examined in order to mitigate oxidation of the nanoparticle surface. Absorbance and photoluminescence spectra were measured at room temperature and 77 K, respectively. Transmission electron microscopy images were also obtained to confirm crystallography and size. Bulk lead selenide was simulated in WIEN2k utilizing the linear-augmented plane wave method of solving density functional theory to better understand the electronic structure of PbSe. The crystal structure, electron density, …

Synthesis, Characterization, And Fabrication Of All Inorganic Quantum Dot Leds, Haider Baqer Salman

Graduate Theses and Dissertations

Quantum Dot LEDs with all inorganic materials are investigated in this thesis. The research was motivated by the potential disruptive technology of core shell quantum dots in lighting and display applications. These devices consisted of three main layers: hole transport layer (HTL), electron transport layer (ETL), and emissive layer where the emission of photons occurs. The latter part was formed of CdSe / ZnS core-shell quantum dots, which were synthesized following hot injection method. The ETL and the HTL were formed of zinc oxide nanocrystals and nickel oxide, respectively. Motivated by the low cost synthesis and deposition, NiO and ZnO …

Role Of The Inner Shell Architecture On The Various Blinking States And Decay Dynamics Of Core-Shell And Core-Multishell Quantum Dots, Pooja Bajwa

Graduate Theses and Dissertations

Colloidal semiconductor nanocrystals (quantum dots, QDs) have received much attention in recent years due to their uniquely size-tunable properties leading to a number of promising applications. Some of their most popular applications include their use as fluorescent probes in biology, as electro-optical components and in photovoltaic devices. CdSe-based QDs are particularly important because of their ease of synthesis, high photoluminescence quantum yields (PL QYs) across the whole visible spectrum and their photostabilty. Shelling of core QDs is usually carried out to improve their optical properties, minimize outer environmental effects on their properties, and avoid toxic element exposure to the environment. …

Fabrication Of Infrared Photodetectors Utilizing Lead Selenide Nanocrystals, Justin Anthony Hill

Graduate Theses and Dissertations

Colloidal lead selenide and lead selenide / lead sulfide core/shell nanocrystals were grown using a wet chemical synthesis procedure. Absorbance and photoluminescence measurements were made to verify the quality of the produced nanocrystals. Absorbance spectra were measured at room temperature, while photoluminescence spectra were measured at 77 K. Organic ligands were exchanged for shorter ligands in order to increase the conductivity of the nanocrystals. Absorption and PL spectra for both core and core/shell nanocrystals were compared. Interdigital photodetector devices with varying channel widths were fabricated by depositing gold onto a glass substrate. Lead selenide nanocrystals were deposited onto these metallic …

Investigation Of Optical Properties Of Zinc Oxide Photodetector, Tyler Chism

Graduate Theses and Dissertations

UV photodetection devices have many important applications for uses in biological detection, gas sensing, weaponry detection, fire detection, chemical analysis, and many others. Today’s photodetectors often utilize semiconductors such as GaAs to achieve high responsivity and sensitivity. Zinc oxide, unlike many other semiconductors, is cheap, abundant, non-toxic, and easy to grow different morphologies at the micro and nano scale. With the proliferation of these devices also comes the impending need to further study optics and photonics in relation to phononics and plasmonics, and the general principles underlying the interaction of photons with solid state matter and, specifically, semiconductors. For this …

Gesn Light-Emitting Devices, Yiyin Zhou

Graduate Theses and Dissertations

Silicon based optoelectronic devices have been investigated for decades. However, due to the indirect band gap nature of Si and Ge, developing of efficient light-emitting source on Si is still a challenging topic. GeSn based optoelectronic devices have the great potential to overcome this deficiency for several reasons. By adding more fraction of Sn into Ge, GeSn band gap could be reduced. The narrowed band gap could be developed for near to mid infrared applications. The alloy can even become the direct band gap material with a large Sn composition (beyond 8%). This feature could enhance the light emission from …

Highly Transparent, Self-Cleaning, And Antireflective Nanoparticle Coatings, Corey Seth Thompson

Graduate Theses and Dissertations

Current solar panel technologies require a sheet of glass to serve as both mechanical support and to protect the cells from the environment. The reflection from the glass sheet can reflect up to 8% of the incident light, reducing the power output of the panel. Antireflective coatings can be used to allow more light to enter the panel to be converted into usable electricity. However, no solid thin film materials exhibit a low enough index of refraction to serve as antireflective coatings for common solar glass. The main goal of this research was to investigate the self-cleaning, antifogging, and antireflective …

Effects Of Nanoholes Grown By Molecular Beam Droplet Epitaxy On Electrical Properties Of Two Dimensional Electron Gas, Yusuke Hirono

Graduate Theses and Dissertations

The effects of nanoholes, grown by molecular beam droplet epitaxy, on the electrical properties of quantum well (QW) heterostructures are reported. To investigate how the depth of nanoholes affect the electrical properties of the QW heterostructures, the growth conditions for nanoholes were optimized with respect to their depth and density. Using the results of the optimization of the nanohole growth, three InGaAs pseudomorphic quantum wells with nanoholes were investigated with varied depth and a constant density. A QW heterostructure without nanoholes was grown as a reference structure. For all the samples, temperature dependent Hall effect measurements, noise studies as a …

Fabrication And Characterization Of Amorphous/Nanocrystalline Thin Film Composite, Benjamin Seth Newton

Graduate Theses and Dissertations

Combining the absorption abilities of amorphous silicon and the electron transport capabilities of crystalline silicon would be a great advantage to not only solar cells but other semiconductor devices. In this work composite films were created using molecular beam epitaxy and electron beam deposition interchangeably as a method to create metallic precursors. Aluminum induced crystallization techniques were used to convert an amorphous silicon film with a capping layer of aluminum nanodots into a film composed of a mixture of amorphous silicon and nanocrystalline silicon. This layer was grown into the amorphous layer by cannibalizing a portion of the amorphous silicon …

Investigation Of The Effects Of Rapid Thermal Annealing On Mbe Grown Gaasbi/Gaas Heterostructures For Optoelectronic Devices, Perry C. Grant

Graduate Theses and Dissertations

High efficiency optoelectronic devices rely on high quality materials making up the device structure. The scope of this thesis investigates the effectiveness of rapid thermal annealing (RTA) at improving the material quality of GaAsBi/GaAs heterostructures. During the fabrication of a device, the contacts of the device had the rapid thermal annealing process accomplished to produce ohmic contacts and this research explored if this annealing treatment degraded the quantum wells that made up the active region of a device. To investigate these effects, a system to measure the photoluminescence of the material system was constructed utilizing Fourier Transform Infrared Spectroscopy. The …

Monodentate, Bidentate And Photocrosslinkable Thiol Ligands For Improving Aqueous Biocompatible Quantum Dots, Hiroko Takeuchi

Graduate Theses and Dissertations

Water-soluble Quantum Dots (QDs) are highly sensitive fluorescent probes that are often used to study biological species. One of the most common ways to render QDs water-soluble for such applications is to apply hydrophilic thiolated ligands to the QD surface. However, these ligands are labile and can be easily exchanged on the QD surface, which can severely limit their application. As one way to overcome this limitation while maintaining a small colloidal size of QDs, we developed a method to stabilize hydrophilic thiolated ligands on the surface of QDs through the formation of a crosslinked shell using a photocrosslinking approach. …

Zinc Oxide Nanorod Based Ultraviolet Detectors With Wheatstone Bridge Design, Arun Vasudevan

Graduate Theses and Dissertations

This research work, for the first time, investigated metal semiconductor-metal (MSM) zine oxide (ZnO) nanorod based ultra-violet (UV) detectors having a Wheatstone bridge design with a high

responsivity at room temperature and above, as well as a responsivity that was largely independent of the change in ambient conditions. The ZnO nanorods which acted as the sensing element of the detector were grown by a chemical growth technique. Studies were conducted to determine the effects on ZnO nanorod properties by varying the concentration of the chemicals used for the rod growth. These studies showed how the rod diameter and the deposition …

Iii-V Bismide Optoelectronic Devices, Dongsheng Fan

Graduate Theses and Dissertations

This dissertation explores modeling, molecular beam epitaxy growth, and fabrication of III-V bismide optoelectronic devices, which are of great importance in modern applications of telecommunication, gas sensing, environment monitoring, etc. In the current room-temperature continuous-wave operational GaSb-based type-I InGaAsSb/AlGaInAsSb quantum well laser diodes in 3-4 um mid-wavelength range, the lasing wavelength and performance of the devices are limited due to the lack of hole confinement in the active regions. In this dissertation, a novel GaSb-based GaInAsSbBi material is proposed to replace the conventional InGaAsSb material in the quantum well region, which enables the laser diodes achieve up to 4 µm …

Device Characterization And Compact Modeling Of The Sige Hbt In Extreme Temperature Environments, Beth Olivia Woods

Graduate Theses and Dissertations

The silicon germanium heterojunction bipolar transistor, SiGe HBT, has very high frequency response but limited voltage range. Commercial communication applications in wireless and system integration have driven the development of the SiGe HBT. However, the device's excellent electrical performance goes beyond the commercial environment. The SiGe HBT performs exceptionally at low temperatures. The device DC current gain and AC small-signal gain significantly increase in the cryogenic temperature range. Applications at low temperatures with expansive temperature range specifications need an HBT compact model to accurately represent the device's performance.

In this work, a compact model referenced at 300K was developed to …

A Silicon Carbide Based Solid-State Fault Current Limiter For Modern Power Distribution Systems, Erik Darnell Johnson

Graduate Theses and Dissertations

The fault current limiter represents a developing technology which will greatly improve the reliability and stability of the power grid. By reducing the magnitude of fault currents in distribution systems, fault current limiters can alleviate much of the damage imposed by these events. Solid-state fault current limiters in particular offer many improved capabilities in comparison to the power system protection equipment which is currently being used for fault current mitigation. The use of silicon carbide power semiconductor devices in solid-state fault current limiters produces a system that would help to advance the infrastructure of the electric grid.

A solid-state fault …

Semiconductor Nanocrystals: From Quantum Dots To Quantum Disks, Zheng Li

Graduate Theses and Dissertations

The bottom-up colloidal synthesis opened up the possibility of finely tuning and tailoring the semiconductor nanocrystals. Numerous recipes were developed for the preparation of colloidal semiconductor nanocrystals, especially the traditional quantum dots. However, due to the lack of thorough understanding to those systems, the synthesis chemistry is still on the empirical level. CdS quantum dots synthesis in non-coordinating solvent were taken as a model system to investigate its molecular mechanism and formation process, ODE was identified as the reducing agent for the preparation of CdS nanocrystals, non-injection and low-temperature synthesis methods developed. In this model system, we not only proved …

A Silicon Carbide Linear Voltage Regulator For High Temperature Applications, Javier Antonio Valle Mayorga

Graduate Theses and Dissertations

Current market demands have pushed the capabilities of silicon to the edge. High temperature and high power applications require a semiconductor device to operate reliably in very harsh environments. This situation has awakened interests in other types of semiconductors, usually with a higher bandgap than silicon's, as the next venue for the fabrication of integrated circuits (IC) and power devices. Silicon Carbide (SiC) has so far proven to be one of the best options in the power devices field.

This dissertation presents the first attempt to fabricate a SiC linear voltage regulator. This circuit would provide a power management option …

Plasma-Assisted Molecular Beam Epitaxial Growth Of Indium Nitride For Future Device Fabrication, Steven Paul Minor

Graduate Theses and Dissertations

The need for energy conservation has heightened the search for new materials that can reduce energy consumption or produce energy by the means of photovoltaic cells. III-nitride alloys show promise for these applications due to their generally good transport properties and ability to withstand high power applications. Along with these, this family of semiconductor alloys has a direct bandgap energy range (0.7-6.2 eV) which spans the entire visible spectrum and encompasses a large portion of the available solar spectrum. Of the three root III-nitride semiconductors, AlN, GaN, and InN, InN has only recently become attainable epitaxially with qualities good enough …