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Articles 31 - 39 of 39
Full-Text Articles in Semiconductor and Optical Materials
Triplet Ground State Of The Neutral Oxygen-Vacancy Donor In Rutile Tio2, A. T. Brant, Eric M. Golden, Nancy C. Giles, Shan Yang, M. A. R. Sarker, S. Watauchi, M. Nagao, I. Tanaka, D. A. Tryk, A. Manivannan, Larry E. Halliburton
Triplet Ground State Of The Neutral Oxygen-Vacancy Donor In Rutile Tio2, A. T. Brant, Eric M. Golden, Nancy C. Giles, Shan Yang, M. A. R. Sarker, S. Watauchi, M. Nagao, I. Tanaka, D. A. Tryk, A. Manivannan, Larry E. Halliburton
Faculty Publications
Electron paramagnetic resonance (EPR) is used to investigate the triplet (S = 1) ground state of the neutral oxygen vacancy in bulk rutile TiO2 crystals. This shallow donor consists of an oxygen vacancy with two nearest-neighbor, exchange-coupled 3+ ions located along the [001] direction and equidistant from the vacancy. The spins of the two trapped electrons, one at each 3+ ion, align parallel to give the S = 1 state. These neutral oxygen vacancies are formed near 25 K in as-grown oxidized TiO2 crystals by illuminating with sub-band-gap 442 nm laser light. The angular dependence of the EPR …
Reversible Mn Segregation At The Polar Surface Of Lithium Tetraborate, Christina L. Dugan, Robert L. Hengehold, Stephen R. Mchale, Juan A. Colon Santana, John W. Mcclory, Volodymyr T. Adamiv, Yaroslav V. Burak, Ya B. Losovyj, Peter A. Dowben
Reversible Mn Segregation At The Polar Surface Of Lithium Tetraborate, Christina L. Dugan, Robert L. Hengehold, Stephen R. Mchale, Juan A. Colon Santana, John W. Mcclory, Volodymyr T. Adamiv, Yaroslav V. Burak, Ya B. Losovyj, Peter A. Dowben
Faculty Publications
We find Mn surface segregation for single crystals of Mn doped Li2B4O7, nominally Li1.95Mn0.05B4O7(001), but as the temperature increases, evidence of this Mn surface segregation diminishes significantly. At room temperature, the surface photovoltaic charging is significant for this pyroelectric material but is quenched at a temperature well below that seen for the undoped Li2B4O7 samples. The suppression of surface charging in the region of 120 °C that accompanies the temperature of Mn dissolution in the bulk of Li2B4 …
Measurement Of Semiconductor Surface Potential Using The Scanning Electron Microscope, Jennifer T. Heath, Chun-Sheng Jiang, Mowafak M. Al-Jassim
Measurement Of Semiconductor Surface Potential Using The Scanning Electron Microscope, Jennifer T. Heath, Chun-Sheng Jiang, Mowafak M. Al-Jassim
Faculty Publications
We calibrate the secondary electron signal from a standard scanning electron microscope to voltage, yielding an image of the surface or near-surface potential. Data on both atomically abrupt heterojunction GaInP/GaAs and diffused homojunction Si solar cell devices clearly show the expected variation in potential with position and applied bias, giving depletion widths and locating metallurgical junctions to an accuracy better than 10 nm. In some images, distortion near the p-n junction is observed, seemingly consistent with the effects of lateral electric fields (patch fields). Reducing the tube bias removes this distortion. This approach results in rapid and straightforward collection of …
Complementary Metal-Oxide Semiconductor-Compatible Detector Materials With Enhanced 1550 Nm Responsivity Via Sn-Doping Of Ge/Si(100), Richard T. Beeler, Jay Mathews, Mee-Yi Ryu, Yung-Kee Yeo, Jose Menendez, John Kouvetakis
Complementary Metal-Oxide Semiconductor-Compatible Detector Materials With Enhanced 1550 Nm Responsivity Via Sn-Doping Of Ge/Si(100), Richard T. Beeler, Jay Mathews, Mee-Yi Ryu, Yung-Kee Yeo, Jose Menendez, John Kouvetakis
Faculty Publications
Previously developed methods used to grow Ge1−ySny alloys on Si are extended to Sn concentrations in the 1019−1020 cm−3 range. These concentrations are shown to be sufficient to engineer large increases in the responsivity of detectors operating at 1550 nm. The dopant levels of Sn are incorporated at temperatures in the 370–390 °C range, yielding atomically smooth layers devoid of threading defects at high growth rates of 15–30 nm/min. These conditions are far more compatible with complementary metal-oxide semiconductor processing than the high growth and processing temperatures required to achieve the same …
Measurement And Modeling Of Infrared Nonlinear Absorption Coefficients And Laser-Induced Damage Thresholds In Ge And Gasb, Torrey J. Wagner, Matthew J. Bohn, Ronald A. Coutu Jr., L. P. Gonzales, J. M. Murray, K. L. Schepler, S. Guha
Measurement And Modeling Of Infrared Nonlinear Absorption Coefficients And Laser-Induced Damage Thresholds In Ge And Gasb, Torrey J. Wagner, Matthew J. Bohn, Ronald A. Coutu Jr., L. P. Gonzales, J. M. Murray, K. L. Schepler, S. Guha
Faculty Publications
Using a simultaneous fitting technique to extract nonlinear absorption coefficients from data at two pulse widths, we measure two-photon and free-carrier absorption coefficients for Ge and GaSb at 2.05 and 2.5 µm for the first time, to our knowledge. Results agreed well with published theory. Single-shot damage thresholds were also measured at 2.5 µm and agreed well with modeled thresholds using experimentally determined parameters including nonlinear absorption coefficients and temperature dependent linear absorption. The damage threshold for a single-layer Al2O3 anti-reflective coating on Ge was 55% or 35% lower than the uncoated threshold for picosecond or nanosecond …
Enhanced Dielectric Properties In Single Crystal-Like Bifeo3 Thin Films Grown By Flux-Mediated Epitaxy, S.-H. Lim, M. Murakami, J. H. Yang, S.-Y. Young, Jason R. Hattrick-Simpers, M. Wuttig, L. G. Salamanca-Riba, I. Takeuchi
Enhanced Dielectric Properties In Single Crystal-Like Bifeo3 Thin Films Grown By Flux-Mediated Epitaxy, S.-H. Lim, M. Murakami, J. H. Yang, S.-Y. Young, Jason R. Hattrick-Simpers, M. Wuttig, L. G. Salamanca-Riba, I. Takeuchi
Faculty Publications
We have fabricated single crystal-like BiFeO3 (BFO) thin films by flux-mediated epitaxy using pulsed laser deposition(PLD). The Bi–Cu–O flux composition and its thickness were optimized using composition spread, thickness gradient, and temperature gradient libraries. The optimized BFO thin films grown with this technique showed larger grain size of ∼2μm and higher dielectric constant in the range of 260–340 than those for standard PLD grown films. In addition, the leakage current density of the films was reduced by two orders of magnitude compared to that of standard PLD grown films.
Combinatorial Study Of Ni-Ti-Pt Ternary Metal Gate Electrodes On Hfo2 For The Advanced Gate Stack, K.-S. Chang, M. L. Green, J. Suehle, E. M. Vogel, H. Xiong, Jason R. Hattrick-Simpers, I. Takeuchi, O. Famodu, K. Ohmori, P. Ahmet, T. Chikyow, P. Majhi, B.-H. Lee, M. Gardner
Combinatorial Study Of Ni-Ti-Pt Ternary Metal Gate Electrodes On Hfo2 For The Advanced Gate Stack, K.-S. Chang, M. L. Green, J. Suehle, E. M. Vogel, H. Xiong, Jason R. Hattrick-Simpers, I. Takeuchi, O. Famodu, K. Ohmori, P. Ahmet, T. Chikyow, P. Majhi, B.-H. Lee, M. Gardner
Faculty Publications
The authors have fabricated combinatorial Ni–Ti–Pt ternary metal gate thin film libraries on HfO2 using magnetron co-sputtering to investigate flatband voltage shift (ΔVfb) , work function (Φm) , and leakage current density (JL) variations. A more negative ΔVfb is observed close to the Ti-rich corner than at the Ni- and Pt-rich corners, implying smaller Φm near the Ti-rich corners and higher Φm near the Ni- and Pt-rich corners. In addition, measured JL values can be explained consistently with the observed Φm variations. Combinatorial methodologies prove to be useful …
Data Management And Visualization Of X-Ray Diffraction Spectra From Thin Film Ternary Composition Spreads, I. Takeuchi, C. J. Long, O. O. Famodu, M. Murakami, Jason R. Hattrick-Simpers, G. W. Rubloff, M. Stukowski, K. Rajan
Data Management And Visualization Of X-Ray Diffraction Spectra From Thin Film Ternary Composition Spreads, I. Takeuchi, C. J. Long, O. O. Famodu, M. Murakami, Jason R. Hattrick-Simpers, G. W. Rubloff, M. Stukowski, K. Rajan
Faculty Publications
We discuss techniques for managing and visualizing x-ray diffraction spectrum data for thin film composition spreads which map large fractions of ternary compositional phase diagrams. An in-house x-ray microdiffractometer is used to obtain spectra from over 500 different compositions on an individual spread. The MATLAB software is used to quickly organize the data and create various plots from which one can quickly grasp different information regarding structural and phase changes across the composition spreads. Such exercises are valuable in rapidly assessing the “overall” picture of the structural evolution across phase diagrams before focusing in on specific composition regions for detailed …
Tunable Multiferroic Properties In Nanocomposite Pbtio3-Cofe2O4 Epitaxial Thin Films, M. Murakami, K.-S. Chang, M. A. Aronova, C.-L. Lin, Ming H. Yu, Jason R. Hattrick-Simpers, M. Wuttig, I. Takeuchi, C. Gao, B. Hu, S. E. Lofland, L. A. Knauss, L. A. Bendersky
Tunable Multiferroic Properties In Nanocomposite Pbtio3-Cofe2O4 Epitaxial Thin Films, M. Murakami, K.-S. Chang, M. A. Aronova, C.-L. Lin, Ming H. Yu, Jason R. Hattrick-Simpers, M. Wuttig, I. Takeuchi, C. Gao, B. Hu, S. E. Lofland, L. A. Knauss, L. A. Bendersky
Faculty Publications
We report on the synthesis of PbTiO3–CoFe2O4 multiferroic nanocomposites and continuous tuning of their ferroelectric and magnetic properties as a function of the average composition on thin-film composition spreads. The highest dielectric constant and nonlinear dielectric signal was observed at (PbTiO3)85–(CoFe2O4)15, where robust magnetism was also observed. Transmission electron microscopy revealed a pancake-shaped epitaxial nanostructure of PbTiO3 on the order of 30 nm embedded in the matrix of CoFe2O4 at this composition. Composition dependent ferroics properties observed here indicate that there …