Semiconductor and Optical Materials Commons^™

Nanomagnet Based Reservoir Computing And Quantum Control, Fahim F. Chowdhury

Theses and Dissertations

Conventional CMOS scaling has driven remarkable advances in computing but faces increasing physical and energy constraints, motivating alternative computing paradigms that integrate memory and computation while improving energy efficiency. Nanoscale magnetic systems offer a promising platform for such approaches because their intrinsic nonlinear dynamics and localized magnetic fields can support both classical and quantum information processing. This thesis investigates nanomagnetic systems for physical reservoir computing and, with primary emphasis, for localized quantum control of spin qubits.

The first part explores dipole-coupled nanomagnet arrays as physical reservoirs. Micromagnetic simulations demonstrate nonlinear dynamical behavior with high short-term memory and parity-check capacity, enabling …

A Fault-Tolerant Exchange-Coupled Spin-Ensemble Qubit At Elevated-Temperatures, Aniruddha Chakraborty

Theses and Dissertations

This thesis introduces a novel qubit architecture: the ferromagnetic exchange-coupled spin ensemble qubit (E-qubit), designed to address the noise-induced instability. In this work, the time evolution of the ensemble’s density matrix is studied using the Liouville–von Neumann equation. To benchmark against a single-spin qubit, the gate fidelity of an E-qubit is computed in the presence of thermal noise. Coherence time is also analyzed under identical thermal condition and a linear scaling is observed with qubit size . The results show that, at 6 K , the gate fidelity error (0.7 % ) of the seven- spin ensemble is an order …

Nano-Patterned Si Structures For Optical Filters And Electro-Mechanical Relays: Fabrication, Characterization, Prospects, And Limitations, Md Ataul Mamun

Theses and Dissertations

Nanofabrication technology, especially nanopatterning, is a rapidly advancing field that has already resulted in creating novel devices and holds promise for producing even more with unmatched performance. These techniques also allow us to gain insight into physical phenomena at the micro- and nanoscale. The ultimate performance of nanofabricated devices and their compatibility with existing Si-based CMOS technology hinge upon the careful selection of materials and precise design, coordinated with meticulous pattern transfer. In this work, we applied nanopatterning techniques on silicon to create optical filters for the shortwave infrared (SWIR) region and nanoelectromechanical system (NEMS) relay-based logic gates. Additionally, these …

Photoluminescence Of Beryllium-Related Defects In Gallium Nitride, Mykhailo Vorobiov, Mykhailo Vorobiov

Theses and Dissertations

This study explores the potential of beryllium (Be) as an alternative dopant to magnesium (Mg) for achieving higher hole concentrations in gallium nitride (GaN). Despite Mg prominence as an acceptor in optoelectronic and high-power devices, its deep acceptor level at 0.22 eV above the valence band limits its effectiveness. By examining Be, this research aims to pave the way to overcoming these limitations and extend the findings to aluminum nitride and aluminum gallium nitride (AlGaN) alloy. Key contributions of this work include. i)Identification of three Be-related luminescence bands in GaN through photoluminescence spectroscopy, improving the understanding needed for further material …

Effect Of Annealing On Photoluminescence From Defects In Gan, Oleksandr Andrieiev

Theses and Dissertations

Annealing is a critical process in modern GaN technology, essential for achieving p-type conductivity by activating the Mg_Ga acceptor, as first demonstrated by Shuji Nakamura in the early 1990s. Despite the omnipresence of hydrogen as an impurity in GaN crystals, the precise mechanisms governing hydrogen diffusion and acceptor passivation remain only partially understood. The presented research investigates the effects of annealing-induced activation and hydrogen passivation on C and Be acceptors in GaN grown by MOCVD, HVPE, and MBE methods. We explored these effects by using several annealing techniques, gas compositions, and thermal regimes. A transient behavior between the C …

Branched Chain Amino Acid Strain State Monitoring With Raman Spectroscopy And Plasmonic Bowtie Nanoantenna Devices For Early Disease Detection, Caroline A. Campbell

Theses and Dissertations

This work centers on the development and the down-selection of nano-manufactured devices to be used in conjunction with Raman spectroscopy for probing a branched chain amino acid. The nano-manufactured devices integrate plasmonic nanoantennas for the purpose of amplifying molecular fingerprints, which are otherwise difficult to detect, through Surface Enhanced Raman Spectroscopy (SERS). Plasmonic nanostructures can be utilized for a variety of biomedical and biochemical applications to detect the characteristic fingerprint provided by Raman Spectroscopy. The nano-manufactured devices create an electric field that amplifies minute perturbations and raises the signal above background noise. This may provide a deeper understanding of signal …

Nature-Inspired Material Strategies Towards Functional Devices, Sayantan Pradhan

Theses and Dissertations

Naturally sourced, renewable biomaterials possess outstanding advantages for a multitude of biomedical applications owing to their biodegradability, biocompatibility, and excellent mechanical properties. Of interest in this dissertation are silk (protein) and chitin (polysaccharide) biopolymers for the fabrication of functional biodevices. One of the major challenges restricting these materials beyond their traditional usage as passive substrate materials is the ability to combine them with high-resolution fabrication techniques. Initial research work is directed towards the fabrication of micropatterned, flexible 2D substrates of silk fibroin and chitin using bench-top photolithographic techniques. Research is focused on imparting electrochemical properties to silk proteins using conducting …

Perovskite Thin Films Annealed In Supercritical Fluids For Efficient Solar Cells, Gilbert Annohene

Theses and Dissertations

In the field of photovoltaics, scientists and researchers are working fervently to produce a combination of efficient, stable, low cost and scalable devices. Methylammonium lead trihalide perovskite has attracted intense interest due to its high photovoltaic performance, low cost, and ease of manufacture. Their high absorption coefficient, tunable bandgap, low-temperature processing, and abundant elemental constituent provide innumerable advantages over other thin film absorber materials. Since the perovskite film is the most important in the device, morphology, crystallization, compositional and interface engineering have been explored to boost its performance and stability. High temperatures necessary for crystallization of organic-inorganic hybrid perovskite films …

Generation Of Warm Dense Plasma On Solar Panel Infrastructure In Exo-Atmospheric Conditions, Harrison C. Wenzel

Theses and Dissertations

The use of a weaponized thermo-nuclear device in exo-atmospheric conditions would be of great impact on the material integrity of orbiting satellite infrastructure. Particular damage would occur to the multi-layered, solar cell components of such satellites. The rapid absorption of X-ray radiation originating from a nuclear blast into these layers occurs over a picosecond time scale and leads to the generation of Warm Dense Plasma (WDP). While incredibly difficult and costly to replicate in a laboratory setting, a collection of computational techniques and software libraries may be utilized to simulate the intricate atomic and subatomic physics characteristics of such an …

Structure, Morphology And Composition-Property Elucidation Of Ni–Mo And Ni−Mo−P Nanocrystals For Water Splitting Reactions And Group Iv Alloy And Silicate Nanocrystals For Visible To Near Ir Optoelectronics, Ebtesam Hassan Abuelenein Eladgham

Theses and Dissertations

Abstract

Structure, Morphology and Composition-Property Elucidation of Ni–Mo and Ni−Mo−P Nanocrystals for Water Splitting Reactions and Group IV Alloy and Silicate Nanocrystals for Visible to Near IR Optoelectronics

by

Ebtesam Hassan Abuelenein Eladgham

A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy at Virginia Commonwealth University.

Advisor: Indika U Arachchige

Associate Professor, Department of Chemistry

Nanomaterials have gained a great attention because of their unique physical properties with size intermediate between molecular materials and extended solids. They have a large surface to volume ratio and display size tunable physical properties that was not …

Photoluminescence From Gan Co-Doped With C And Si, Mykhailo Vorobiov

Theses and Dissertations

This thesis devoted to the experimental studies of yellow and blue luminescence (YL and BL relatively) bands in Gallium Nitride samples doped with C and Si. The band BL_C was at first observed in the steady-state photoluminescence spectrum under high excitation intensities and discerned from BL1 and BL2 bands appearing in the same region of the spectrum. Using the time-resolved photoluminescence spectrum, we were able to determine the shape of the BL_C and its position at 2.87 eV. Internal quantum efficiency of the YL band was estimated to be 90\%. The hole capture coefficient of the BL_{C …}

Fabrication Of Flexible, Biofunctional Architectures From Silk Proteins, Ramendra K. Pal

Theses and Dissertations

Advances in the biomedical field require functional materials and processes that can lead to devices that are biocompatible, and biodegradable while maintaining high performance and mechanical conformability. In this context, a current shift in focus is towards natural polymers as not only the structural but also functional components of such devices. This poses material-specific functionalization and fabrication related questions in the design and fabrication of such systems. Silk protein biopolymers from the silkworm show tremendous promise in this regard due to intrinsic properties: mechanical performance, optical transparency, biocompatibility, biodegradability, processability, and the ability to entrap and stabilize biomolecules. The unique …

Optical Spectroscopy Of Wide Bandgap Semiconductor Heterostructures And Group-Iv Alloy Quantum Dots, Tanner A. Nakagawara

Theses and Dissertations

Efficient and robust blue InGaN multiple quantum well (MQW) light emitters have become ubiquitous; however, they still have unattained theoretical potential. It is widely accepted that “localization” of carriers due to indium fluctuations theoretically enhance their efficiency by moderating defect-associated nonradiative recombination. To help develop a complete understanding of localization effects on carrier dynamics, this thesis explores degree of localization in InGaN MQWs and its dependence on well thickness and number of wells, through temperature and power dependent photoluminescence measurements. Additionally, silicon-compatible, nontoxic, colloidally synthesizable 2-5 nm Ge_1-xSn_x alloy quantum-dots (QDs) are explored for potential visible to …

The Dawn Of New Quantum Dots: Synthesis And Characterization Of Ge1-Xsnx Nanocrystals For Tunable Bandgaps., Richard J. Esteves

Theses and Dissertations

Ge_1-xSn_x alloys are among a small class of benign semiconductors with composition tunable bandgaps in the near-infrared spectrum. As the amount of Sn is increased the band energy decreases and a transition from indirect to direct band structure occurs. Hence, they are prime candidates for fabrication of Si-compatible electronic and photonic devices, field effect transistors, and novel charge storage device applications. Success has been achieved with the growth of Ge_1-xSn_x thin film alloys with Sn compositions up to 34%. However, the synthesis of nanocrystalline alloys has proven difficult due to larger discrepancies (~14%) in …

Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian

Theses and Dissertations

Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that …

Spectroscopy Studies Of Straincompensated Mid-Infrared Qcl Active Regions On Misoriented Substrates, Gregory Edward Triplett, Justin Grayer, Charles Meyer, Emily Cheng, Denzil Roberts

Electrical and Computer Engineering Publications

In this work, we perform spectroscopic studies of AlGaAs/InGaAs quantum cascade laser structures that demonstrate frequency mixing using strain-compensated active regions. Using a three-quantum well design based on diagonal transitions, we incorporate strain in the active region using single and double well configurations on various surface planes (100) and (111). We observe the influence of piezoelectric properties in molecular beam epitaxy grown structures, where the addition of indium in the GaAs matrix increases the band bending in between injector regions and demonstrates a strong dependence on process conditions that include sample preparation, deposition rates, mole fraction, and enhanced surface diffusion …

Orientation-Dependent Pseudomorphic Growth Of Inas For Use In Lattice-Mismatched Mid-Infrared Photonic Structures, Gregory Edward Triplett, Charles Meyer, Emily Cheng

Electrical and Computer Engineering Publications

In this study, InAs was deposited on GaAs (100) and GaAs (111)B 2 degrees towardssubstrates for the purpose of differentiating the InAs growth mode stemming from strain and then analyzed using in-situ reflection high energy electron diffraction, scanning electron microscopy, Raman spectroscopy, reflectance spectroscopy, and atomic force microscopy. The procession of InAs deposition throughout a range of deposition conditions results in assorted forms of strain relief revealing that, despite lattice mismatch for InAs on GaAs (approximately 7%), InAs does not necessarily result in typical quantum dot/wire formation on (111) surfaces, but instead proceeds two-dimensionally due primarily to the surface orientation.

Extending Device Performance In Photonic Devices Using Piezoelectric Properties, Gregory Edward Triplett

Electrical and Computer Engineering Publications

This study focuses on the influence of epi-layer strain and piezoelectric effects in asymmetric GaInAs/GaAlAs action regions that potentially lead to intra-cavity frequency mixing. The theoretical limits for conduction and valence band offsets in lattice-matched semiconductor structures have resulted in the deployment of non-traditional approaches such as strain compensation to extend wavelength in intersubband devices, where strain limits are related to misfit dislocation generation. Strain and piezoelectric effects have been studied and verified using select photonic device designs. Metrics under this effort also included dipole strength, oscillator strength, and offset of energy transitions, which are strongly correlated with induced piezoelectric …

Pseudomorphic Growth Of Inas On Misoriented Gaas For Extending Quantum Cascade Laser Wavelength, Gregory Edward Triplett, Charles Meyer, Emily Cheng, Justin Grayer, David Mueller, Denzil Roberts, Samuel Graham

Electrical and Computer Engineering Publications

The authors have studied the impact of epilayer strain on the deposition of InAs/GaAs on (100) and (111)B with 2 degrees offset toward 2-1-1 surfaces. Consequences of a 7% lattice mismatch between these orientations in the form of three-dimensional growth are less apparent for (111)B with 2 degrees offset toward 2-1-1 surfaces compared to (100). By exploring a range of molecular beam epitaxy process parameters for InAs/GaAs growth and utilizing scanning electron microscopy, atomic force microscopy, and Raman spectroscopy to evaluate the quality of these strained layers, the authors develop empirical models that describe the influence of the process conditions …