Semiconductor and Optical Materials Commons^™

High-Tcr Multivalence Vanadium Oxide Thin-Films From Deposition Parameter Control To Microbolometer Applications, Latika Susheel M. Chaudhary

Electronic Theses & Dissertations (2024 - present)

This thesis details the development of multivalence-nanostructured vanadium oxide (VOₓ) thin films for uncooled microbolometer applications, with a systematic optimization of magnetron-sputtering parameters. The temperature coefficient of resistance (TCR), resistivity, and optical response of VOₓ thin-film sensing layers are controlled by valence composition, grain growth, and surface morphology. The primary goal was to achieve a high TCR with low resistivity to improve thermal detector performance.

Multivalent VOₓ thin films were deposited on silicon, SiO₂, and glass substrates using DC magnetron sputtering. Three key parameters were systematically varied: Ar:O₂ ratio (18:2 to 15:5), deposition time (60–120 minutes), and DC power (300W …

Development Of Alternative Plasma Etching Techniques For The Selective Removal Of Tan With Respect To Sioch Dielectric Materials To Enable Future Back-End-Of-The-Line Scaling, Ivo Otto Iv

Electronic Theses & Dissertations (2024 - present)

Transistor scaling has continued according to Moore’s Law for over fifty years. As transistor size decreases, adequate power delivery is required to enable transistor scaling without performance loss. Power delivery is provided by a metal interconnect network with insulating dielectric that connects the transistor level to the power source, the signal speed within this metal line network limiting transistor level switching speeds. Reduction of signal delay has moved from primarily dimension-based improvement towards adoption of conductor and dielectric materials with lower resistivity and a reduced dielectric constant value, respectively: transitioning from Al/SiO₂ to Cu/low-κ SiOCH. With this transition comes …

Molecular Diffusion In Chemically Amplified Resists For Euv Lithography, Eshan Dilina Thilakarathna

Electronic Theses & Dissertations (2024 - present)

Photolithography is a critical manufacturing step in high-volume manufacturing (HVM) of semiconductor devices, where a photoresist layer is used to transfer nanoscale patterns onto the underlying stack materials. As the microelectronics industry continues to move toward smaller node sizes, driven by Moore's Law. As a result, the tolerances for photoresist performance have become increasingly demanding, which necessitates simultaneous improvements in resolution, defectivity, and roughness. At advanced nodes, these performance limitations are governed by the fundamental stochastic nature of the photochemical processes occurring within the resist film itself, rather than the optical or tool-level constraints. Photon shot noise, the statistical distribution …

Investigation Of Fine-Grain Cu And Cu Alloys For Low-Temperature Hybrid Bonding Applications, Sarabjot Singh

Electronic Theses & Dissertations (2024 - present)

Hybrid bonding has emerged as a key enabler for next-generation three-dimensional (3D) integration, offering fine-pitch interconnects and improved electrical performance. However, conventional Cu–Cu hybrid bonding typically requires elevated temperatures to achieve sufficient diffusion and interface quality, posing challenges for temperature-sensitive device integration and process compatibility. This work investigates materials engineering approaches to enable low-temperature Cu–Cu bonding through both microstructure design and alloying strategies.

This work begins by examining grain refinement in Cu as a pathway to enhance diffusion through increased grain boundary density, providing efficient atomic transport without introducing additional elements. Three Cu-based systems Cu–Co, Cu–Ag, and Cu–Al were systematically …

Nanostructured Cathode Catalysts For Aem Electrolysis: From Catalyst Design To Degradation And Hydrogen Dynamics, Yamini Kumaran

Electronic Theses & Dissertations (2024 - present)

Anion exchange membrane water electrolysis (AEMWE) presents a promising pathway toward cost-effective and sustainable hydrogen production by integrating the chemical robustness of alkaline systems with the compact, zero-gap design of proton exchange membrane electrolyzers. However, the widespread implementation of AEMWE is limited by the availability of highly active and durable platinum-group-metal (PGM)-free catalysts and by an incomplete understanding of their degradation behavior under realistic operating conditions.

This dissertation focuses on the development, characterization, and mechanistic investigation of nanostructured MoNi₄–MoO₂-based electrodes for efficient and stable hydrogen generation under alkaline and membrane-integrated environments. MoNi₄–MoO₂ nanorods …

Development Of Group Iii-V Quantum Confinement-Enabled Detectors: Bias-Tunable Quantum Well Infrared Photodetector (Qwip) And Quantum Dot Scintillation Detector (Qdsd), Gyana R. Biswal

Electronic Theses & Dissertations (2024 - present)

This dissertation discloses the physics, fabrication, characterization, and analysis of two novel types of group III-V semiconductor detectors relying on quantum confinement of carriers, namely voltage-tunable quantum well infrared photodetectors (QWIP) and a high-yield ultrafast quantum dot scintillation detector (QDSD). Both QWIP and QDSD heterostructures presented here were grown on 3” GaAs (001) substrates using molecular beam epitaxy (MBE).

A major part of the dissertation focuses on development of the voltage-tunable QWIPs targeting detection in the mid-wave infrared region (MWIR) (3μm -5μm) and long-wave infrared region (LWIR) (8μm -12μm) with control of sensitivity by the applied bias. The QWIPs utilize …

Epitaxial Quantum Dot Scintillators With Monolithic Photodetector Integration: Physics, Fabrication And Characterization Of Materials And Devices, Allan Oreave Minns

Electronic Theses & Dissertations (2024 - present)

This dissertation discloses the physics, fabrication, and characterization of high-performance scintillator detectors based on epitaxial InAs quantum dots (QDs) in GaAs. The detector crystals grown include monolithically integrated In_0.35GaAs photodetectors with Al_0.92-0.6In_0.03-0.35Ga_0.05As metamorphic buffer layers (MBL). A device fabrication process was developed for the lithographic patterning, chemical etching, contact metallization and readout integration of materials grown by means of molecular beam epitaxy (MBE) on 3-inch GaAs (001) wafers. Low capacitance integration with readout electronics was achieved through wire bonds to custom printed circuit boards (PCBs) with commercial components.

The relationship between device …