Semiconductor and Optical Materials Commons^™

Rapid-Prototyping Nanofabrication: Lcd-Based Projection Lithography And Physical Vapor Deposition, Sabeel Saleem Mohammmed

University Honors Theses

The semiconductor industry's continued growth, driven in large part by demand for artificial intelligence hardware, has highlighted the need for greater workforce development in regions adjacent to major fabrication centers like Oregon's Silicon Forest. This capstone project lays the groundwork for a small scale and student led semiconductor fabrication lab at Portland State University by demonstrating two of the core steps in chip manufacturing: photolithography and thin film deposition. Rather than relying on conventional fixed reticles, this work explores a unique, low cost approach to patterning that uses an ultraviolet-compatible liquid crystal display (LCD) as a programmable reticle, allowing arbitrary …

Reducing Switching Noise And Losses In Two-Stage Electric Power Converters, Abhijeet Prem

Student Research Symposium

Advancements in semiconductor devices are enabling the design of better electrical power converter systems. Wide Bandgap (WBG) switching devices from Silicon Carbide and Gallium Nitride can operate at high temperatures, voltages, and frequencies with faster turn-on/off periods, improving converter performance over silicon devices. However, WBG technology is still new, and the rapid switching transitions of these devices lead to issues such as voltage overshoots, ringing, and electromagnetic interference, which need to be addressed for widespread adoption. This work introduces a new control method for reshaping the switching voltages, which overcomes the disadvantages of fast transition time without increasing the system's …

Enhanced Carrier Transport By Transition Metal Doping In Ws2 Field Effect Transistors, Maomao Liu, Sichen Wei, Simran Shahi, Hemendra Nath Jaiswal, Paolo Paletti, Sara Fathipour, Maja Remskar, Jun Jiao, Wansik Hwang, Fei Yao, Huamin Li

Physics Faculty Publications and Presentations

High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal–semiconductor interfaces in WS₂ field effect transistors (FETs) by introducing a typical transition metal, Cu, with two different doping strategies: (i) a “generalized” Cu doping by using randomly distributed Cu atoms along the channel and (ii) a “localized” Cu doping by adapting an ultrathin Cu layer at the metal–semiconductor interface. Compared to the pristine WS₂ FETs, both the generalized Cu atomic dopant and localized Cu contact decoration can provide a Schottky-to-Ohmic contact …

Three Speed 3d Printed Magnetic Gear, Robert J. Rutherford

Maseeh Summer Undergraduate Research Experience

Power transmission is traditionally achieved with a mechanical gear. Mechanical gears require maintenance, cause vibration, and have no overload protection. Magnetic gears offer an innovative solution to these drawbacks as they do not require regular maintenance, have no need for lubrication, create very little acoustic noise, have built in overload protection and as a result of these advantages, have a longer lifetime of operation. This research focused upon the design, assembly and demonstration of the magnetic gear concept. The research used a solid works design, 3D printed ABS plastic housing, and use of neodymium magnets and ferromagnetic iron segments.

This …

Understanding Photovoltaic Properties Of Pbs Quantum Dot Solids Via Solution Contacting, Vitalii Dereviankin, Erik Johansson

Student Research Symposium

Photovoltaic (PV) devices based on PbS quantum dot (QD) solids demonstrate high photontoelectron conversion yields. However, record power conversion efficiency remain low, in part due to small photovoltages, which in turn are affected by both bulk and interfacial defects. Their relative impacts on limiting the photovoltaic performance of QD solids are not known. Interfacial defects can be formed when contacting a semiconductor and may dominate the semiconductor/metal or metaloxide junction properties. The objective of this study is to explore whether electrochemical contacting using liquid electrolytes provides means of contacting QD solids without introducing interfacial defects. We have initially focused on …

Semiconductor Film Grown On A Circular Substrate: Predictive Modeling Of Lattice-Misfit Stresses, Ephraim Suhir, Johann Nicolics, G. Khatibi, M. Lederer

Mechanical and Materials Engineering Faculty Publications and Presentations

effective and physically meaningful analytical predictive model is developed for the evaluation the lattice-misfit stresses (LMS) in a semiconductor film grown on a circular substrate (wafer). The two-dimensional (plane-stress) theory-of-elasticity approximation (TEA) is employed in the analysis. The addressed stresses include the interfacial shearing stress, responsible for the occurrence and growth of dislocations, as well as for possible delaminations and the cohesive strength of a buffering material, if any. Normal radial and circumferential (tangential) stresses acting in the film cross-sections and responsible for its short- and long-term strength (fracture toughness) are also addressed. The analysis is geared to the GaN …

Fundamental Properties Of Functional Zinc Oxide Nanowires Obtained By Electrochemical Method And Their Device Applications, Athavan Nadarajah

Dissertations and Theses

We report on the fundamental properties and device applications of semiconductor nanoparticles. ZnO nanowires and CdSe quantum dots were used, prepared, characterized, and assembled into novel light-emitting diodes and solar cells. ZnO nanowire films were grown electrochemically using aqueous soluble chloride-based electrolytes as precursors at temperatures below 90° C. Dopants were added to the electrolyte in the form of chloride compounds, which are AlCl₃, CoCl₂, CuCl₂, and MnCl₂. The optical, magnetic, and structural properties of undoped and transition-metal-ion doped ZnO nanowires were explored. Our results indicate that the as-grown nanowire structures have …

Metamaterial Devices For The Terahertz Band, Gabriel Paul Kniffin

Center for Electron Microscopy and Nanofabrication Publications and Presentations

Terahertz (THz) and metamaterials are both hot topics in electromagnetics research. The THz band (0.1-10 THz) lies in the ‘gap’ between microwave and far infrared regions. Research is currently underway to characterize how these waves interact with matter, with potential applications including security screening, medical imaging, and non-destructive evaluation. Metamaterials are artificial materials containing sub-wavelength structures whose material properties, μ and ǫ can be ‘tuned’ to desired specifications, including simultaneously negative values, resulting in exotic properties such as a negative refractive index. Current metamaterials research includes the design of devices that operate at THz frequencies, filling a niche left wide …

Nano Quasicrystal Formation And Local Atomic Structure In Zr––Pd And Zr––Pt Binary Metallic Glasses, Junji Saida, Takashi Sanada, Shigeo Sato, Muneyuki Imafuku, Chunfei Li, Akihisa Inoue

Center for Electron Microscopy and Nanofabrication Publications and Presentations

Formation of the nanoscale icosahedral quasicrystalline phase (I-phase) in the melt-spun Zr₇₀Pd₃₀ and Zr₈₀Pt₂₀ binary metallic glasses were reported. Local atomic structure in the glassy and quasicrystal (QC)-formed states were also analyzed by XRD and EXAFS measurements in order to investigate the formation mechanism of QC phase. The distorted icosahedral-like local structure can be identified around Zr atom in the Zr₇₀Pd₃₀ metallic glass. In the QC formation process, a change of local environment around Zr is detected, in which the approximately one Zr atom substitutes for one Pd atom. In contrast, …