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Articles 271 - 300 of 345

Full-Text Articles in Semiconductor and Optical Materials

Synthesis And Characterization Of Silicon Oxide And Silicon Carbide Nanostructures., Majid Salim Mohammed Al-Ruqieshi Jan 2010

Synthesis And Characterization Of Silicon Oxide And Silicon Carbide Nanostructures., Majid Salim Mohammed Al-Ruqieshi

Student Works (2010-2019)

Silicon oxide nanostructures have attracted extensive interests in recent years due to their physical and optical properties. SiOx nanostructures are synthesized by catalytic and non-catalytic approaches. With catalytic approach, long and uniform amorphous silicon oxide nanowires, nanofibers (comet and tree like), nanocakes and nanocages were synthesized on Si substrate by carbothermal evaporation reactions of TiO2 at high temperature. The SiOx nanowires were about 13 nm to 243 nm in diameters and 194 nm to several microns in length and the nanofibres with diameter between 8 nm to 30 nm and around 50 nm to 2.5μm in length. The diameter and …

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Excitation-Induced Germanium Quantum Dot Formation On Si (100)-(2×1), Ali Oguz Er, Hani E. Elsayed-Ali Jan 2010

Excitation-Induced Germanium Quantum Dot Formation On Si (100)-(2×1), Ali Oguz Er, Hani E. Elsayed-Ali

Physics Faculty Publications

The effect of nanosecond pulsed laser excitation on the self-assembly of Ge quantum dots grown by pulsed laser deposition on Si (100)-(2×1) was studied. In situ reflection high-energy electron diffraction and ex situ atomic force microscopy were used to probe the quantum dot structure and morphology. At room temperature, applying the excitation laser decreased the surface roughness of the grown Ge film. With surface electronic excitation, crystalline Ge quantum dots were formed at 250 °C, a temperature too low for their formation without excitation. At a substrate temperature of 390 °C, electronic excitation during growth was found to improve the …

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Synthesis And Characterization Of A [Ru(Bpy)2(Ncs)2] Derivative For Use As A Dye-Sensitizer In Nanocrystalline Solar Cells, Joel Thomas Kirner Jan 2010

Synthesis And Characterization Of A [Ru(Bpy)2(Ncs)2] Derivative For Use As A Dye-Sensitizer In Nanocrystalline Solar Cells, Joel Thomas Kirner

Honors Program Theses

After extensive review of the field of dye-sensitized solar cells, the molecule [Ru(4,4’- dicarboxy-2,2’-bipyridine)(4,4’-di-(2-(2-pyridyl)ethenyl)-2,2’-bipyridine)(NCS)2] has been designed as an original contribution to the field. This dye sensitizer was chosen by derivatizing upon the structure of the standard sensitizer, cis-diisothiocyanatobis(4,4’-dicarboxylic acid-2,2’- bipyridine)ruthenium(II) (N3), by extending the conjugation of one bipyridine ligand. This structural derivatization should enhance light harvesting by red-shifting the dye’s absorbance and increasing the dye’s molar absorptivity, which should result in a dye-sensitized solar cell with higher efficiency. The Density Functional Theory (DFT) molecular orbital calculations of the new dye complex indicate that the HOMO is highly localized …

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Enhanced Visible Light Photoelectrochemical Performances With Nitrogen Doped Tio2 Nanowire Arrays, Xiao-Jun Lv, Yue-Ming Li, Hao Zhang, Da Chen, Jennifer Hensel, Jin Z Zhang, Jing-Hong Li Nov 2009

Enhanced Visible Light Photoelectrochemical Performances With Nitrogen Doped Tio2 Nanowire Arrays, Xiao-Jun Lv, Yue-Ming Li, Hao Zhang, Da Chen, Jennifer Hensel, Jin Z Zhang, Jing-Hong Li

Journal of Electrochemistry

Self-organized anodic anatase TiO2 nanowire arrays doped with nitrogen have been successfully fabri-cated and their photoelectrochemical(PEC) properties have been characterized and found to be substantially im-proved compared to undoped nanowires or commercial P25 nanoparticles.Photocurrent measured with monochro-matic incident light showed that the incident photon-to-current efficiency(IPCE,%) values of nanowire arrayelectrodes with or without N-doping were obviously higher than that of commercial P25 nanoparticle electrodes,and nitrogen-doped TiO2 nanowire arrays(NTNA) had noticeable absorption in the visible region.The NTNAelectrodes showed the highest photocurrent density and power conversion efficiency under 100 mW/cm2 visiblelight illumination.A maximumolphotoconversion efficiency of 0.52% was achieved for the …

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The Effects Of Pressure On Wide Bandgap Gan Semiconductors, William Kang, Linda Tran, Eunja Kim Aug 2009

The Effects Of Pressure On Wide Bandgap Gan Semiconductors, William Kang, Linda Tran, Eunja Kim

Undergraduate Research Opportunities Program (UROP)

Gallium nitride (GaN) is a group-III nitride semiconductor; which may prove useful in developing optical instruments that operate under high ambient pressures. The purpose of this project is to examine the properties of GaN under varying conditions. The methods used in this experiment consist of modeling free energy as a function of lattice constants; calculating bond lengths, bond strengths, and bulk moduli; and comparing the resultant data with values in published literature. We will also compare these results with experimental data drawn from x-ray diffraction scans. By doing so, we hope to determine whether gallium nitride is suitable for use …

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Wave Optics Simulation Of Optically Augmented Retroreflections For Monostatic/Bistatic Detection, John J. Tatar Iii Mar 2009

Wave Optics Simulation Of Optically Augmented Retroreflections For Monostatic/Bistatic Detection, John J. Tatar Iii

Theses and Dissertations

Optical devices interrogated with a laser in the appropriate band can exhibit strong, deterministic reflections of the incident beam. This characteristic could be exploited for optical target detection and identification. The distribution of reflected power is strongly dependent on the geometry of the interrogation scenario, atmospheric conditions, and the cross section of the target optical device. Previous work on laser interrogation systems in this area has focused on analytic models or testing. To the best of my knowledge, I am presenting for the first time an approach to predict reflected power for a variety of interrogation configurations, targets, and propagation …

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A Comparative Study Of The Bidirectional Reflectance Distribution Function Of Several Surfaces As A Mid-Wave Infrared Diffuse Reflectance Standard, Bradley Balling Mar 2009

A Comparative Study Of The Bidirectional Reflectance Distribution Function Of Several Surfaces As A Mid-Wave Infrared Diffuse Reflectance Standard, Bradley Balling

Theses and Dissertations

The Bi-Directional Reflectance Distribution Function (BRDF) has a well defined diffuse measurement standard in the ultraviolet, visible, and near infrared (NIR), Spectralon(trade name). It is predictable, stable, repeatable, and has low surface variation because it is a bulk scatterer. In the mid-wave IR (MWIR) and long-wave IR (LWIR), there is not such a well-defined standard. There are well-defined directional hemispherical reflectance (DHR) standards, but the process of integrating BRDF measurements into DHR for the purpose of calibration is problematic, at best. Direct BRDF measurement standards are needed. This study use current calibration techniques to ensure valid measurements and then systematically …

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Photoelectrochemical Properties Of Tio2 Nanoparticles, Jie Qu, Ying Li, Qi-Wei Jiang, Xue-Ping Gao Feb 2009

Photoelectrochemical Properties Of Tio2 Nanoparticles, Jie Qu, Ying Li, Qi-Wei Jiang, Xue-Ping Gao

Journal of Electrochemistry

The protonated titanate nanoparticles were obtained at room temperature and subsequently calcined at different temperatures(300 ℃,400 ℃,500 ℃,600 ℃ and 700 ℃) in air.The obtained products were characterized by XRD,TEM and UV-Vis.It is found that the grain sizes of TiO2 nanoparticles calcined at 300 ℃ were about 20 nm,and increased gradually with the temperature rise.Photoelectric performance was measured with I～V curve and electrochemical impedance spectroscopy(EIS).The TiO2 nanoparticles obtained at 500 ℃ showed the best photoelectrochemical properties with a photovoltaic conversion efficiency of 6.39%,which is much higher than those at other temperatures.In addition,it is also demonstrated that the charge …

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Study On The Texturization Of C-Si Wafers By Different Kinds Of Alkaline For Heterojunction Solar Cells, Yu-Hua Dou, Yu-Qin Zhou, Mei-Fang Zhu, Shuang Song, Feng-Zhen Liu, Jin-Long Liu, Zhan-Jun Zhang Nov 2008

Study On The Texturization Of C-Si Wafers By Different Kinds Of Alkaline For Heterojunction Solar Cells, Yu-Hua Dou, Yu-Qin Zhou, Mei-Fang Zhu, Shuang Song, Feng-Zhen Liu, Jin-Long Liu, Zhan-Jun Zhang

Journal of Electrochemistry

The texturization of(100) crystalline silicon(c-Si) wafer was studied by field-emission scanning electron microscope using different kinds of etchant: sodium hydroxide,sodium carbonate and tribasic sodium phosphate.By optimizing the etching parameters,the lowest values of averaged reflectance(Rav) were obtained to be 9.70% for NaOH,9.76% for Na2CO3 and 8.63% for Na3PO4·12H2O,which is comparable to that of the wafer with textured surface covered with an anti-reflection coating of either silicon nitride or thermally grown silicon dioxide.The relation of Rav and surface morphology of textured wafer was analyzed.Moreover,special emphasis was put on the role of isopropyl alcohol(IPA) …

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Preparation And Optical Transmission Of The Zno Nanorod Array Films, Feng Ye, Jing-Jing Li, Tong-Tao Wang, Yong-Liang Wang, Yun Liu, Xin-Dong Wang Nov 2008

Preparation And Optical Transmission Of The Zno Nanorod Array Films, Feng Ye, Jing-Jing Li, Tong-Tao Wang, Yong-Liang Wang, Yun Liu, Xin-Dong Wang

Journal of Electrochemistry

By using a galvaostatic electrodeposition method in the ZnCl2 solution,the highly oriented ZnO nanorod array films have been successfully prepared on ITO substrate after the pretreatment with ZnO nanoparticles.And they were characterized by scanning electron microscope,X-ray diffraction and transmittance spectra.The results indicated that the ZnO nanorod arrays grew along(001) direction with an orientation perpendicular to the substrate.When the wavelength of incident was over 380 nm,the ZnO nanorod arrays showed high optical transmission of above 95%.Furthermore,the band gap became narrower.

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Preparation And Photoelectrochemical Properties Of Fe-Doped Tio2 Nanotube Arrays, Jing Li, Lan Sun, Hui-Fang Zhuang, Cheng-Lin Wang, Rong-Gui Du, Chang-Jian Lin May 2008

Preparation And Photoelectrochemical Properties Of Fe-Doped Tio2 Nanotube Arrays, Jing Li, Lan Sun, Hui-Fang Zhuang, Cheng-Lin Wang, Rong-Gui Du, Chang-Jian Lin

Journal of Electrochemistry

The Fe-doped TiO2 nanotube arrays were fabricated in Fe(NO3)3-HF mixing solutions by electrochemical anodic oxidation method,and characterized by FESEM,Raman,XPS and DRS.The effect of Fe concentratiions on photoelectrochemical property of the arrays was also investigated.The diameters and lengths of Fe-doped TiO2 nanotube arrays were 50~90 nm and about 200 nm,respectively.Compared with the undoped TiO2 nanotube arrays,the absorption edge of Fe-doped TiO2 nanotube arrays appeared red shifting.The more Fe content,the larger red shifting,in addition,the photocurrent of Fe-doped TiO2 nanotube arrays increased obviously.

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Activation Energy Of Surface Diffusion And Terrace Width Dynamics During The Growth Of In (4×3) On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali Jan 2008

Activation Energy Of Surface Diffusion And Terrace Width Dynamics During The Growth Of In (4×3) On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The nucleation and growth of indium on a vicinal Si (100) - (2×1) surface at high temperature by femtosecond pulsed laser deposition was investigated by in situ reflection high energy electron diffraction (RHEED). RHEED intensity relaxation was observed for the first ∼2 ML during the growth of In (4×3) by step flow. From the temperature dependence of the rate of relaxation, an activation energy of 1.4±0.2 eV of surface diffusion was determined. The results indicate that indium small clusters diffused to terrace step edges with a diffusion frequency constant of (1.0±0.1) × 1011 s-1. The RHEED specular …

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Nonthermal Laser-Induced Formation Of Crystalline Ge Quantum Dots On Si(100), M. S. Hegazy, H. E. Elsayed-Ali Jan 2008

Nonthermal Laser-Induced Formation Of Crystalline Ge Quantum Dots On Si(100), M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The effects of laser-induced electronic excitations on the self-assembly of Ge quantum dots on Si (100) - (2×1) grown by pulsed laser deposition are studied. Electronic excitations due to laser irradiation of the Si substrate and the Ge film during growth are shown to decrease the roughness of films grown at a substrate temperature of ∼120 °C. At this temperature, the grown films are nonepitaxial. Electronic excitation results in the formation of an epitaxial wetting layer and crystalline Ge quantum dots at ∼260 °C, a temperature at which no crystalline quantum dots form without excitation under the same deposition conditions. …

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Formation Of In- (2×1) And In Islands On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali Jan 2007

Formation Of In- (2×1) And In Islands On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The growth of indium on a vicinal Si (100) - (2×1) surface at room temperature by femtosecond pulsed laser deposition (fsPLD) was investigated by in situ reflection high-energy electron diffraction (RHEED). Recovery of the RHEED intensity was observed between laser pulses and when the growth was terminated. The surface diffusion coefficient of deposited In on initial two-dimensional (2D) In- (2×1) layer was determined. As growth proceeds, three-dimensional In islands grew on the 2D In- (2×1) layer. The RHEED specular profile was analyzed during film growth, while the grown In islands were examined by ex situ atomic force microscopy. The full …

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Application Of Electrolessplating Technology In Interconnection Manufacturing Of Ultralarge-Scale Integration, Zeng-Lin Wang, Zhi-Juan Liu, Hong-Yan Jiang, Xiu-Wen Wang, Shingubara Shoso May 2006

Application Of Electrolessplating Technology In Interconnection Manufacturing Of Ultralarge-Scale Integration, Zeng-Lin Wang, Zhi-Juan Liu, Hong-Yan Jiang, Xiu-Wen Wang, Shingubara Shoso

Journal of Electrochemistry

In this paper,research progresses in electroless plating for damascene copper process were reviewed.Electroless nickel ternary alloy deposition for barrier layer and electroless copper plating for seed layer were presented.Bottom-up copper fill high-aspect-via-hole and electroless plating after ICB-Pd catalytic layer for seed layer were mainly introduced.The applications of electroless plating in ultralarge-scale integration were discussed,and the developing tendency was also suggested.

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Passive Multiple Beam Combination In Optical Fibers Via Stimulated Brillouin Scattering, Kirk C. Brown Mar 2006

Passive Multiple Beam Combination In Optical Fibers Via Stimulated Brillouin Scattering, Kirk C. Brown

Theses and Dissertations

Many active methods of scaling laser brightness have been demonstrated in recent years. The goal of this research was to demonstrate the feasibility of passively combining multiple laser beams using Stimulated Brillouin Scattering (SBS) in a long multimode optical fiber. This method of combination employed a “Gatling gun” fiber array that allowed several collimated beams to be focused by a lens into an optical fiber. The retroreflected Stokes beam is passed through the center of the beam combiner for analysis. In addition to experimental methodology and equipment used, the theoretical and historical background of SBS in optical fibers is provided. …

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Characteristics Of Two-Dimensional Triangular And Three-Dimensional Face-Centered-Cubic Photonic Crystals, Jeffery D. Clark Mar 2006

Characteristics Of Two-Dimensional Triangular And Three-Dimensional Face-Centered-Cubic Photonic Crystals, Jeffery D. Clark

Theses and Dissertations

The fabrication of photonic crystals (PhC) with photonic band gaps (PBG) in the visible range is a difficult task due to the small structural feature sizes of the PhC. The particular type of PhC examined is a two-dimensional (2-D) triangular structure with a PBG designed for visible wavelengths with applications in visible integrated photonic systems. This work examines the processes involved and viability of fabricating 2-D triangular PhC's by a variety of techniques: focused ion beam, electron lithography and holographic photo-polymerization/lithography. The design of the PhC was based on a program created to display gap maps for triangular structures. The …

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Special Photoelectrochemical Response Of Nano-Crystalline Tio2 Electrode, Bi-Bo Lan, Jian-Zhang Zhou, Yan-Yan Xi, Hong-Xiang Chen, Guang-Hua Yao, Zhong-Hua Lin Feb 2006

Special Photoelectrochemical Response Of Nano-Crystalline Tio2 Electrode, Bi-Bo Lan, Jian-Zhang Zhou, Yan-Yan Xi, Hong-Xiang Chen, Guang-Hua Yao, Zhong-Hua Lin

Journal of Electrochemistry

The nano-crystalline TiO2 electrodes were prepared by spread method,electrodeposition and sol-gel method.The experimental results show that the nano-crystalline TiO2 electrodes have special photoelectrochemical response-the photocrrent-potential curves appear peaks.The special photoelectrochemical behaviors of nano-(crystalline) TiO2  electrodes are ascribed to nano-structure as well as special light induced redox reaction mechanism of nano-crystalline semiconductor electrodes.

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Melting And Solidification Study Of As-Deposited And Recrystallized Bi Thin Films, M. K. Zayed, H. E. Elsayed-Ali Jan 2006

Melting And Solidification Study Of As-Deposited And Recrystallized Bi Thin Films, M. K. Zayed, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Melting and solidification of as-deposited and recrystallized Bi crystallites, deposited on highly oriented 002-graphite at 423 K, were studied using reflection high-energy electron diffraction (RHEED). Films with mean thickness between 1.5 and 33 ML (monolayers) were studied. Ex situ atomic force microscopy was used to study the morphology and the size distribution of the formed nanocrystals. The as-deposited films grew in the form of three-dimensional crystallites with different shapes and sizes, while those recrystallized from the melt were formed in nearly similar shapes but different sizes. The change in the RHEED pattern with temperature was used to probe the melting …

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Growth Of Ge Quantum Dots On Si(100)-(2×1) By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali Jan 2006

Growth Of Ge Quantum Dots On Si(100)-(2×1) By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Self-assembled germanium quantum dots (QDs) were grown on Si(100)-(2×1) by pulsed laser deposition. In situ reflection-high energy electron diffraction (RHEED) and postdeposition atomic force microscopy are used to study the growth of the QDs. Several films of different thicknesses were grown at a substrate temperature of 400 °C using a Q-switched Nd:yttrium aluminum garnet laser (λ= 1064 nm, 40 ns pulse width, 23 J/cm 2 fluence, and 10 Hz repetition rate). At low film thicknesses, hut clusters that are faceted by different planes, depending on their height, are observed after the completion of the wetting layer. With increasing film thickness, …

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Multiple Channel Laser Beam Combination And Phasing Using Stimulated Brillouin Scattering In Optical Fibers, Brent W. Grime Dec 2005

Multiple Channel Laser Beam Combination And Phasing Using Stimulated Brillouin Scattering In Optical Fibers, Brent W. Grime

Theses and Dissertations

Brightness scaling lasers using stimulated Brillouin scattering (SBS) in optical fibers is explored. A multiple-channel amplifier approach is used to increase the total power of a laser system while avoiding a significant burden on a single channel. The work explores two approaches utilizing both SBS beam cleanup and SBS piston error conjugation. A unique beam combiner that takes advantage of the SBS beam cleanup properties of a long, gradient-index multimode fiber was designed and tested. The beam combiner was developed to combine multiple-channel laser beams simultaneously with high input and output coupling efficiency. The design for the SBS beam combiner …

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Using Electrodeposition To Fabricate Mould For Polymer Microfluidic Chip, Yi Luo, De-Nan Chu, Zhi-Feng Lou, Chong Liu, Li-Ding Wang May 2005

Using Electrodeposition To Fabricate Mould For Polymer Microfluidic Chip, Yi Luo, De-Nan Chu, Zhi-Feng Lou, Chong Liu, Li-Ding Wang

Journal of Electrochemistry

Many researches have been focused on polymer microfluidic chip in recent years and the mould plays an important role in its fabrication process. Using electrodepositingmethod to fabricate a metal mould for polymer microfluidic chip has been presented in this paper. An ultra-thick photoresist SU-8 was coated on a pretreated metal plate, after photolithography, nickel was electrodeposited in the patterned SU-8, then was removed the SU-8 to obtain a final metal mould. This methodreduces workload of electrodeposit largely. Applying counter current before deposit, adding additive to solution and vacuum anneal after demould have been used to improve the binding force between …

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Data Management And Visualization Of X-Ray Diffraction Spectra From Thin Film Ternary Composition Spreads, I. Takeuchi, C. J. Long, O. O. Famodu, M. Murakami, Jason R. Hattrick-Simpers, G. W. Rubloff, M. Stukowski, K. Rajan Jan 2005

Data Management And Visualization Of X-Ray Diffraction Spectra From Thin Film Ternary Composition Spreads, I. Takeuchi, C. J. Long, O. O. Famodu, M. Murakami, Jason R. Hattrick-Simpers, G. W. Rubloff, M. Stukowski, K. Rajan

Faculty Publications

We discuss techniques for managing and visualizing x-ray diffraction spectrum data for thin film composition spreads which map large fractions of ternary compositional phase diagrams. An in-house x-ray microdiffractometer is used to obtain spectra from over 500 different compositions on an individual spread. The MATLAB software is used to quickly organize the data and create various plots from which one can quickly grasp different information regarding structural and phase changes across the composition spreads. Such exercises are valuable in rapidly assessing the “overall” picture of the structural evolution across phase diagrams before focusing in on specific composition regions for detailed …

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Self-Assembly Of Ge Quantum Dots On Si(100)- 2×1 By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali Jan 2005

Self-Assembly Of Ge Quantum Dots On Si(100)- 2×1 By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Self-assembled Ge quantum dots are grown on Si(100)- 2×1 by pulsed laser deposition. The growth is studied by in situ reflection high-energy electron diffraction and postdeposition atomic force microscopy. After the completion of the wetting layer, transient hut clusters, faceted by different planes, are observed. When the height of these clusters exceeded a certain value, the facets developed into {305} planes. Some of these huts become {305}-faceted pyramids as the film mean thickness was increased. With further thickness increase, dome clusters developed on the expense of these pyramids. © 2005 American Institute of Physics. [DOI: 10.1063/1.1949285]

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Studies Of Infrared Optical Properties Of Palladium Nanoparticles With Different Sizes And Dispersed States, Yan-Xia Jiang, Hong-Gang Liao, Wei Chen, Shi-Gang Sun May 2004

Studies Of Infrared Optical Properties Of Palladium Nanoparticles With Different Sizes And Dispersed States, Yan-Xia Jiang, Hong-Gang Liao, Wei Chen, Shi-Gang Sun

Journal of Electrochemistry

Pd nanoparticles with different sizes and dispersed states were prepared. Their infrared optical properties were studied with CO molecule probe. The infrared spectroscopic investigation revealed that Pdn of 6.6 nm and Pdn(cube)of 100～150nmexhibit normal IR absorption. The center of IR bands are around 1970 cm-1 and 1910cm-1. Pdnis introduced into the surface of electrode, and is induced by interface electric fieldto form the aggregation of nanoparticles Pdn(ag). The Pdn(ag) has a different IR optical property from Pdn. The direction of IR absorption band of Pdn …

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Preparation And Optical Properties Of Highly Ordered Cds Nanowire Arrays, Lan Sun, Chang-Jian Lin May 2004

Preparation And Optical Properties Of Highly Ordered Cds Nanowire Arrays, Lan Sun, Chang-Jian Lin

Journal of Electrochemistry

Highly ordered CdS nanowire arrays have been prepared by using dc electrodeposition in the porous anodic aluminum oxide template. Scanning electro microscopy (SEM) and transmission electron microscopy (TEM) reveal that the nanowires are uniform and highly ordered. The measurements of X-ray diffraction and high-resolved electron microscopy (HRTEM) show that the nanowires are hexagonal structure with the crystallographic c-axis preferentially oriented along the length of the pore. The UV-Vis absorption spectra of CdS nanowire arrays show that the absorption edges of the nanowire arrays shift towards short wavelength with the decrease of the nanowire size. The photoluminescence measurements show that the …

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Preparation, Characterization And Photoelectrochemical Activities Of Cu-Tio2/Ito Films, Dong Shu, Chun He, Han-Xia Zhang, Ya Xiong May 2004

Preparation, Characterization And Photoelectrochemical Activities Of Cu-Tio2/Ito Films, Dong Shu, Chun He, Han-Xia Zhang, Ya Xiong

Journal of Electrochemistry

Cu-TiO2/ITO films were prepared by direct photo-reduction deposition of Cu2+ on TiO2/ITO films. The nanocomposite films were characterized by UV-vis diffuse reflectance spectra (DRS), XRD spectra, Scanning Electron Microscope (SEM) technology, and photovoltage measurement. The feasibility of improving the photocatalytic activity of TiO2 film by combining the modification of Cu nanoparticles with the application of anodic bias was investigated. The experimental results showed that the deposited Cu has an apparent enhancement effect with respect to suppressing the recombination between the photogenerated charge carriers and enhancing the photocatalytic oxidation of formic acid. The combination could …

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Optical Characterization And Modeling Of Compositionally Matched Indium Arsenide-Antimonide Bulk And Multiple Quantum Well Semiconductors, Scott C. Phillips Mar 2004

Optical Characterization And Modeling Of Compositionally Matched Indium Arsenide-Antimonide Bulk And Multiple Quantum Well Semiconductors, Scott C. Phillips

Theses and Dissertations

Indium arsenide-antimonide (InAsSb) semiconductors have been determined to emit in the 3-5 micrometer range, the window of interest for countermeasures against infrared electro-optical threats. This experiment set out to cross the bulk to quantum well characterization barrier by optically characterizing two sets of compositionally matched type I quantum well and bulk well material samples. Absorption measurements determined the band gap energy of the bulk samples and the first allowed subband transition for the quantum wells. By collecting absorption spectra at different temperatures, the trend of the energy transitions was described by fitting a Varshni equation to them. The expected result …

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Pure Iron Electrolyzed From Scrap Iron Chips And Its Corrosion Characteristics, Wei-Min Cao, Ren-He Yin, Hui-Ceng Yan, Zhi-Qiang Ye Feb 2003

Pure Iron Electrolyzed From Scrap Iron Chips And Its Corrosion Characteristics, Wei-Min Cao, Ren-He Yin, Hui-Ceng Yan, Zhi-Qiang Ye

Journal of Electrochemistry

The high purity electrolytic iron was made from scrap iron chips. Electrolytic conditions of pure iron were determined in chloride baths and the highest purity was 99.983% by chemical analysis. Pure iron had very compact texture and high mechanical strength by SEM figures of cross section. In deaerated 0.5 kmol·m-3 H2SO4 and 0.5 kmol·m-3 NaCl solutions, the corrosion rate of iron decreased with increasing purity.

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Study Of Transport Properties Of Inas Using Monte Carlo Simulation, Satyanadh Gundimada Oct 2002

Study Of Transport Properties Of Inas Using Monte Carlo Simulation, Satyanadh Gundimada

Electrical & Computer Engineering Theses & Dissertations

The present research is aimed at ascertaining the usefulness of InAs semiconductor material for single photon avalanche photo detectors operating in the Geiger mode at 2 μm wavelengths. InAs is considered as the material suitable for the purpose because of its less bandgap and lower effective mass of the electrons when compared to other semiconductor materials presently in use. Hence, theoretically transient transport properties of bulk InAs are superior and the velocity overshoot phenomena stronger. InAs is a relatively less explored material when compared to other materials like GaAs. The choice of the material is justified with thorough exploration of …

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