Open Access. Powered by Scholars. Published by Universities.®

Semiconductor and Optical Materials Commons™

Open Access. Powered by Scholars. Published by Universities.®

Electrical and Computer Engineering

Institution
Keyword
Publication Year
Publication
Publication Type

Articles 271 - 300 of 311

Full-Text Articles in Semiconductor and Optical Materials

Optical And Etching Studies Of Native Aluminum Oxide Layers For Use In Microcavity Photonic Devices, William L. Bernhard Mar 2001

Optical And Etching Studies Of Native Aluminum Oxide Layers For Use In Microcavity Photonic Devices, William L. Bernhard

Theses and Dissertations

Optical communication and computing systems are required to meet future information transfer and processing needs. Microcavity devices serve as an enabling technology to implement and integrate optoelectronic systems. It is important to understand the optical and mechanical properties of materials utilize within microcavity devices. Only then is it possible to accurately model and analyze structures. Microcavity structures incorporating a high aluminum content AlGaAs layers are designed, grown, processed, and measured. The processing of these devices includes the conversion of high aluminum-content AlGaAs layers to native aluminum oxide (AlO) layers through the process of thermal oxidation. This selective conversion of microcavity …

Go to article

The Photoelectrochemistry Of Tio2-Polyaniline Composite Film, Huai-Guo Huang, Zhi-Xin Zheng, Jin Luo, Hong-Ping Zhang, Ling-Ling Wu, Zhong-Hua Lin Feb 2001

The Photoelectrochemistry Of Tio2-Polyaniline Composite Film, Huai-Guo Huang, Zhi-Xin Zheng, Jin Luo, Hong-Ping Zhang, Ling-Ling Wu, Zhong-Hua Lin

Journal of Electrochemistry

A TiO2 and polyaniline (PANI) composite film was obtained by electrochemical methods. The SEM image of the composite film showed that the PANI film is almost completely covered with TiO2 efficiency. The spectra of photocurrent for the TiO2-PANI composite film were different from these of TiO2 film photosensitized by PANI. The bandgap energy of TiO2 film on partially oxidized PANI film was determined as 3.0 eV by the threshold energy of photocurrent band for TiO2. The spectra of photocurrent for partially oxidized PANI film electrode suggested that it has the characteristics of …

Go to article

Optical Properties Of Wide Band Gap Indium Sulphide Thin Films Obtained By Physical Vapor Deposition, N. Barreau, S. Marsillac, J. C. Bernède, T. Ben Nasrallah, S. Belgacem Jan 2001

Optical Properties Of Wide Band Gap Indium Sulphide Thin Films Obtained By Physical Vapor Deposition, N. Barreau, S. Marsillac, J. C. Bernède, T. Ben Nasrallah, S. Belgacem

Electrical & Computer Engineering Faculty Publications

Thin films of indium sulphide containing oxygen have been synthesized following a dry physical process. The constituents are deposited by thermal evaporation on glass substrates and then annealed under argon flow. Polycrystalline β-In2S3 containing oxygen thin films are obtained as soon as the temperature of annealing is between 623 and 723 K. In this paper, these β-In2S3 thin films have optically been studied. The optical band gap is direct. Its value is not dependent on the temperature of annealing. It is about 2.8 eV, which is higher than that of β-In2S3 …

Go to article

Effects Of Argon Dilution Of Silane On The Optical Properties And Surface Morphology Of Hydrogenated Amorphous Silicon, Choon Kheam Lim Jan 2001

Effects Of Argon Dilution Of Silane On The Optical Properties And Surface Morphology Of Hydrogenated Amorphous Silicon, Choon Kheam Lim

Student Works (2000-2009)

Hydrogenated amorphous silicon (a.Si:H) was prepared using the d.c plasma grow discharge system. Two sets of samples were prepared and studied. The first set of samples referred to as the high argon dilution films were prepared from the discharge of pure silane at flow-rate of 5sccm and silane at the same flow-rate diluted in argon at flow-rates of 5, 10 and 15sccm. Similarly, the second set of sample referred to as the low argon dilution films were prepared from the discharge of pure silane at flow-rate of20sccm and silane at the same flow-rate diluted in argon at the flow-rates mentioned …

Go to article

Photoelectrochemical Studies On The Tio2 Nanostructured Porous Film Sensitized By Cyanine Dye, Li Zhang, Mai-Zhi Yang, Xue-Bin Qiao, Yan-Zhong Hao, En-Qing Gao, Sheng-Min Cai Nov 1999

Photoelectrochemical Studies On The Tio2 Nanostructured Porous Film Sensitized By Cyanine Dye, Li Zhang, Mai-Zhi Yang, Xue-Bin Qiao, Yan-Zhong Hao, En-Qing Gao, Sheng-Min Cai

Journal of Electrochemistry

The photoelectrochemical behaviors of the TiO2 nanostructured porous film sensitized by cyanine dye were investigated in this paper. The results showed that the excitaed state level matched the conduction band edge of TiO2 nanoparticle. Therefore the sensitization of the dye can increase the photocurrent intensity of the TiO2 nanostructured electrode obviously and results in a red-shift of optical absorption from the ultra-violet region to the visible. As a result, the light-to-electricity conversion efficiency was improved evidently, the maximum value of IPCE has reached 12.1%.

Go to article

Evaluation Of The Transport Properties Of Gasb For Bipolar Applications Through Monte Carlo Simulations, Damayanthi Palaniappan Oct 1999

Evaluation Of The Transport Properties Of Gasb For Bipolar Applications Through Monte Carlo Simulations, Damayanthi Palaniappan

Electrical & Computer Engineering Theses & Dissertations

GaAs is currently the semiconductor material of choice for high speed, low power applications. Its electronic transport properties are superior to almost all other semiconductors. It is also used in a variety of bipolar applications such as photodetectors and photo-mixers. However, as is well known, the hole mobility and related transport parameters of GaAs are not very good. This is a serious drawback, and poses a potential problem for all applications involving bipolar conductivity. In order to increase the high :frequency limits and high-speed capability of bipolar devices, the choice of an alternative material, therefore, becomes necessary. An important first …

Go to article

Low-Temperature Molecular Beam Epitaxy Of Gaas: A Theoretical Investigation Of Antisite Incorporation And Reflection High-Energy Diffraction Oscillations, K. Natarajan, Rama Venkat, Donald L. Dorsey May 1999

Low-Temperature Molecular Beam Epitaxy Of Gaas: A Theoretical Investigation Of Antisite Incorporation And Reflection High-Energy Diffraction Oscillations, K. Natarajan, Rama Venkat, Donald L. Dorsey

Electrical & Computer Engineering Faculty Research

Surface dynamics dominate the incorporation of charged, As+Ga, and neutral, As0Ga, antisite arsenic, and the temporal variation of reflection high-energy electron diffraction(RHEED) intensity in the low-temperature molecular beam epitaxy of (100) gallium arsenide(GaAs). A rate equation model is proposed which includes the presence and dynamics of a physisorbed arsenic (PA) layer riding the growth surface. The PA layer dictates the incorporation and concentration of As+Ga and As0Ga. Additionally, it influences the RHEED oscillations (ROs) behavior and the RO’s dependence on its coverage through its contribution to the reflected intensity. The model results for the dependence of As+Ga and As0Ga concentrations …

Go to article

Output Control Of Vertical Microcavity Light Emitting Device, James A. Lott Apr 1999

Output Control Of Vertical Microcavity Light Emitting Device, James A. Lott

AFIT Patents

An improved intracavity sensor based output power control for microcavity light emitting devices. An improved phototransistor transducer is both configured and physically disposed so that it passively transmits the spurious optical energy output of the microcavity light emitting device while simultaneously generating a light determined electrical signal of easily used large magnitude that is nearly free of error. The base-collector region of the transistor is disposed with a quantum well absorbing layer and produces a signal responsive to a selected emission wavelength. The configuration of the optical energy communicating transducer is arranged so that it is improved in sensitivity and …

Go to article

Photoelectrochemical Studies On Nanoporous Tio2/Pan Film Electrode, Min-Sheng Liu, Yan-Zhong Hao, Xue-Bin Qiao, Mai-Zhi Yang, Sheng-Min Cai Aug 1998

Photoelectrochemical Studies On Nanoporous Tio2/Pan Film Electrode, Min-Sheng Liu, Yan-Zhong Hao, Xue-Bin Qiao, Mai-Zhi Yang, Sheng-Min Cai

Journal of Electrochemistry

The photon to electricity conversion process of nanoporous TiO2/PAn film electrode was studied in electrolytes with and without redox couple by using the photocurrent action spectra and potential dependence of photocurrent. It is concluded that the nanoporous TiO2/PAn film electrode has a structure of duplex n type semiconductor layers. The band gap of PAn film is 2.88eV.The TiO2 nanoporous film electrode modified by PAn can extend the range of optical absorption into visible and infrared region and effectively increase the photocurrent in the visible and infrared region. The photocurrent threshold shifts to>600nm and conversion …

Go to article

The Investigations Of Surface Treatment Methods And Characterization Of Oxide Films On Ab5 Based Metal Hydride Electrodes Ⅰ. New NiRich Treatment Methods And Photoelectrochemical Characterization Of Oxide Films, Junmin Nan, Yong Yang, Jun Li, Zugeng Lin Feb 1998

The Investigations Of Surface Treatment Methods And Characterization Of Oxide Films On Ab5 Based Metal Hydride Electrodes Ⅰ. New NiRich Treatment Methods And Photoelectrochemical Characterization Of Oxide Films, Junmin Nan, Yong Yang, Jun Li, Zugeng Lin

Journal of Electrochemistry

Two simple and efficient surface treatment methods for AB5 type hydrogen storage alloys were developed. The results of X-ray photoelectron spectroscopy (XPS) and cyclic voltammetric (CV) experiments showed that the hydrogen storage alloys treated by two different methods had Ni rich surface layer so that the performances of the electrodes were improved after treatment. The characterization of the oxide films which formed on the surface of electrodes through potentiodynamic oxidation with the help of photoelectrochemical microscopy (PEM) were done. The anodic photocurrent and the cathodic photocurrent related to the oxidation of hydrogen and the reduction of oxygen on the …

Go to article

Photoluminescence Of Photoelectrochemically Etched N+-Si, Guozheng Li, Chengqian Zhang, Xiumei Yang Nov 1997

Photoluminescence Of Photoelectrochemically Etched N+-Si, Guozheng Li, Chengqian Zhang, Xiumei Yang

Journal of Electrochemistry

PS layer on n+-Si with (111) orientation prepered by means of photoelectrochemically etched has photo-luminescent (PL) ability like PS layer on usual n-Si. The data of PL spectra and quenching are given.

Go to article

Gallium Desorption Behavior At Algaas/Gaas Heterointerfaces During High-Temperature Molecular Beam Epitaxy, K. Mahalingam, D. L. Dorsey, K. R. Evans, Rama Venkat Aug 1997

Gallium Desorption Behavior At Algaas/Gaas Heterointerfaces During High-Temperature Molecular Beam Epitaxy, K. Mahalingam, D. L. Dorsey, K. R. Evans, Rama Venkat

Electrical & Computer Engineering Faculty Research

A Monte Carlo simulation study is performed to investigate the Ga desorption behavior during AlGaAs-on-GaAs heterointerface formation by molecular beam epitaxy. The transients in the Ga desorption rate upon opening the Al shutter are shown to be associated with the concurrent reduction in the V/III flux ratio. Monte Carlo simulations employing a constant V/III flux ratio yield a “steplike” variation in the Ga desorption rate with the resulting interfaces closer in abruptness to the ideal AlGaAs-on-GaAs interface. Further details on the stoichiometry of the interface and its relationship with predicted Ga desorption profiles is presented.

Go to article

Electroluminescence Of Photoelectrochemically Etched N+-Si, Guozheng Li, Chengqian Zhang, Xiumei Yang May 1997

Electroluminescence Of Photoelectrochemically Etched N+-Si, Guozheng Li, Chengqian Zhang, Xiumei Yang

Journal of Electrochemistry

Porous silicon with micrometer size pores, which is made on n+-Si by photoelectrochemically etched, has electroluminescent property. Each monochromic intensity and wavelength range of luminescent spectra depend on polarized potential. The intersity and the stability of cathodic electroluminescence is high than those of anodic one. Voltammetric behavior before quenching indicated that the electrochemical reactions of some surface species are involved in except the reduction of S2O82-, which leads to radiative recombination. The energy band diagram based on n+-Si(Eg=1.1 eV)/PS(Eg=1.8 eV) junction is proposed.

Go to article

Optical And Electrical Properties Of Cualse² Thin Films Obtained By Selenization Of Cu/Al/Cu... Al/Cu Layers Sequentially Deposited, J. C. Bernède, S. Marsillac, C. El Moctar, A. Conan Jan 1997

Optical And Electrical Properties Of Cualse² Thin Films Obtained By Selenization Of Cu/Al/Cu... Al/Cu Layers Sequentially Deposited, J. C. Bernède, S. Marsillac, C. El Moctar, A. Conan

Electrical & Computer Engineering Faculty Publications

Optical and electrical properties of CuAlSe2 thin films obtained by selenization of Cu/Al/Cu...Al/Cu layers sequentially deposited have been investigated. It is shown that the expected energy gap (2.67 eV) is measured for well crystallized films, whereas a slightly higher value is measured for films not so well crystallized. Raman diffusion also shows differences between well and poorly crystallized films with peaks corresponding to the reference powder for the former samples. A p-type conductivity is found whatever the crystalline quality of the samples. The conductivity of the films depends also strongly on their crystalline properties. When the films are badly …

Go to article

Cualse² Thin Films Obtained By Chalcogenization, S. Marsillac, K. Benchouk, C. El Moctar, J. C. Bernède, J. Pouzet, A Khellil, M. Jamali Jan 1997

Cualse² Thin Films Obtained By Chalcogenization, S. Marsillac, K. Benchouk, C. El Moctar, J. C. Bernède, J. Pouzet, A Khellil, M. Jamali

Electrical & Computer Engineering Faculty Publications

CuAlSe2 thin films have been synthesized by chalcogenization of thin Cu and Al layers sequentially deposited by evaporation under vacuum. It is shown that CuAlSe2 films are obtained with some Cu2-δSe and Se phases present at the surface. These surface phases are suppressed by annealing under vacuum and by chemical etching in a KCN solution. At the end of the process, the XRD spectrum demonstrates that textured CuAlSe2 films have been obtained with preferential orientation of the crystallites along the (112) direction. The gap of the films is 2.7 eV as expected. The …

Go to article

A Stochastic Model For Crystal-Amorphous Transition In Low Temperature Molecular Beam Epitaxial Si(111), R. Venkatasubramanian, Suresh Gorantla, S. Muthuvenkatraman, Donald L. Dorsey Dec 1996

A Stochastic Model For Crystal-Amorphous Transition In Low Temperature Molecular Beam Epitaxial Si(111), R. Venkatasubramanian, Suresh Gorantla, S. Muthuvenkatraman, Donald L. Dorsey

Electrical & Computer Engineering Faculty Research

Molecular beam epitaxial Si (111) grown below a certain temperature result in amorphous structure due to the limited surface mobility of atoms in finding correct epitaxial sites. In spite of many experimental and theoretical studies, the mechanism of crystal‐amorphous transition and its dynamics related to the growth conditions are not well understood. In this article, we present a theoretical model based on the formation of stacking fault like defects as a precursor to the amorphous transition of the layer. The model is simulated based on a stochastic model approach and the results are compared to that of experiments for temperatures …

Go to article

The Reduction Of Oxygen To Hydrogen Peroxide In An Acidic Trickle Bed Cell Using Graphite Chip Cathode, Zhaoe Lu, Guanyong Zhang, Tiangeng Zhong, Guonu Fang May 1996

The Reduction Of Oxygen To Hydrogen Peroxide In An Acidic Trickle Bed Cell Using Graphite Chip Cathode, Zhaoe Lu, Guanyong Zhang, Tiangeng Zhong, Guonu Fang

Journal of Electrochemistry

The authors investigated the electrochemical reduction of oxygen to hydrogen peroxide in 0.05 mol/L H2SO4 solution by the trickle bed electrode using graphite chip. The bed dimension was 14×5×0.6 cm. The current efficiency and the concentration of H2O2 in the catholyte were determined at various current strengths and various rates of adding the electrolyte. The proper current was 0.15 A. i.e. the current density was 2.1 mA/cm2 vertical cross section area of the bed. The concentration of H2O2 reached 7×10-3 mol/L with the current efficiency of 0.2. If the …

Go to article

A Photoelectrochemical Investigation Of A.C.Modulated Passive Films On 304 Stainless Steel In Weak-Alkaline And Neutral Solution, Tianbao Du, Chunan Cao, Jiakang Yu, Haichao Lin Nov 1995

A Photoelectrochemical Investigation Of A.C.Modulated Passive Films On 304 Stainless Steel In Weak-Alkaline And Neutral Solution, Tianbao Du, Chunan Cao, Jiakang Yu, Haichao Lin

Journal of Electrochemistry

A photoelectrochemical investigation has been carried out on AISI 304 stainless steeI AV modulated passive film in 0.1mol/L Na2B4O7 and 0.5 mol/L Na2SO4 solution. Photo current curve depends on the potential, passive condition and testing solutions. The results of the measurements indicate that the photoresponse is determined by the defects in the electronic structure of the films whenthe defects lead to localized states in the bandgap region. It is concluded that the passive film on AISI 304 stainless steel is in a highly disordered amorphous state.

Go to article

The Photoelectrochemical Studies Of Passive Films On Rebar Electrodes In Simulated Cement Pore Solution, Wei Chu, Yuanxiang Shi, Baoming Wei, Yong Yang, Xuguang Chen, Zugeng Lin Aug 1995

The Photoelectrochemical Studies Of Passive Films On Rebar Electrodes In Simulated Cement Pore Solution, Wei Chu, Yuanxiang Shi, Baoming Wei, Yong Yang, Xuguang Chen, Zugeng Lin

Journal of Electrochemistry

The electronic properties of the passive film on REBAR electrodes in simulatedcement pore solution (pH=9.0～13.8) have been investigated using in-situ photoelectrochemical methods. The results show that the passive film is composed of mixed oxides of ferrum, and it is an amorphous, n-type semiconductive film. Variations of pH values, ions in the solution and film-formation potentials can affect the composition of the films. There are two main stages in the growthof the film, with two rate functions characterized by linear relation between the film thickness and thelogarithm of time. The addition of inhibitor NaNO2 changes the composition, structure and growth …

Go to article

Laser Scanning In-Situ Photoelectrochemical Microscopictechnique And Its Applications, Zugeng Lin, Jinkua You, Xiangdong Zhuo, Chun Zhang, Yong Yang May 1995

Laser Scanning In-Situ Photoelectrochemical Microscopictechnique And Its Applications, Zugeng Lin, Jinkua You, Xiangdong Zhuo, Chun Zhang, Yong Yang

Journal of Electrochemistry

The main factors of the laser scanning in-situ photoelectrochemical microscopic measurement system which is set up in our lab have been discusaed in this paper. Some applications of this technique for in-situ study of modification and processing of semiconductor electrodes, monitoring of electro deposition process of semiconducting material and redox reaction occurring at metal oxide electrodes have also been presented. The results have shown that the technique is very powerful that for studing local photoelectrochemical properties of semiconductors and metal oxide electrodes. These provide important information on the micro structural and electronic properties in the solid/electrolyte interface.

Go to article

Photoelectrochemical And Spectroelectrochemical Studies Oniron Oxide Ultrafine Particles, Maizhi Yang, Yongjun Ji, Wen Zhang, Shengmin Cai, Xiaojiang Lu, Zhongqun Tian, Jin Luo May 1995

Photoelectrochemical And Spectroelectrochemical Studies Oniron Oxide Ultrafine Particles, Maizhi Yang, Yongjun Ji, Wen Zhang, Shengmin Cai, Xiaojiang Lu, Zhongqun Tian, Jin Luo

Journal of Electrochemistry

In this paper, Raman spectra, photocurrent and the UV-VIS reflectance aremeasured for studying the α-Fe2O3 ultrafine particles adsorbed on Pt electrode. The blue shifts of Raman peaks demonstrate the size quantization effect for the particles of 50 nm in diameter ascompared with the bulk material. With the changing of the potential, the photocurrent decrcases as the UV-VIS reflectance increases, and vice-versa. Therefore, the potential not only affects the hargetransfer direcdtion in the interface of electrode/redox couple, but also influences the light absortion onthe surface of particles. According to the results of photoelectrochemistry, we suggest that the cathodic …

Go to article

A Photoelectrochemical Investigation Of Zirconium Oxide Film, Maizhi Yang, Ping Wei, Di Quarto F., Piazza S., Sunseri C. Feb 1995

A Photoelectrochemical Investigation Of Zirconium Oxide Film, Maizhi Yang, Ping Wei, Di Quarto F., Piazza S., Sunseri C.

Journal of Electrochemistry

A photoelectrochemical investigation has been carried out on zirconium initialoxide film and its oxide film grownanodically at constant rate up to different thickness. Both anodicand cathedic photocurrents on the photocurrent spectrum depended on the potential, but had littlerelation with the forming anedic films or measuring solutions. Photocurrent spectrum and photocurrenttransients suggested that the oxide films on zirconium were duplex layers structure. The internal layerwas ZrO2 and the external layer ZrO2·(H2O)n. The photocurrent included photogenerated carrier ininternal and external oxide films, as well as internal photoinjection process for electrons from thesubstrate metal into the …

Go to article

Diagnostics Of Cdte Electrodeposition By Rest Potential Voltammetry, Brandon Kemp, Robert Engelken, Arif Raza, Arees Siddiqui, Omer Mustafa Jan 1995

Diagnostics Of Cdte Electrodeposition By Rest Potential Voltammetry, Brandon Kemp, Robert Engelken, Arif Raza, Arees Siddiqui, Omer Mustafa

Journal of the Arkansas Academy of Science

Due to the extreme sensitivity of the partial elemental currents (i.e.,iCd, iTe) and, hence, stoichiometry to deposition voltage, temperature, mass transport, and ambient light intensity during electrodeposition of semiconductor films, it is important to implement in-situ methods for monitoring the stoichiometry and related semiconductor efficacy of the growing film. We report investigation of open circuit rest potential (Eoc) voltammetry as one such method during electrodeposition of CdTe from aprotic electrolytes such as ethylene glycol. Plots of transient open circuit potential versus sweep voltage exhibit distinct transition and plateau structures corresponding to Te, CdTe, and Cd phases and correlating with the …

Go to article

Total Ionizing Dose Effects In Mosfet Devices At 77 K, Kevin J. Daul Dec 1994

Total Ionizing Dose Effects In Mosfet Devices At 77 K, Kevin J. Daul

Theses and Dissertations

Total ionizing dose effects on thermal oxide and reoxidized nitrided oxide (RNO) MOSFET devices at 77 K were studied. The MOSFETs were immersed in liquid nitrogen and irradiated, using a 60Co source, up to 1 Mrad(Si) at a dose rate of 107 rads(Si)-sec. Drain current-gate voltage characteristics were obtained and used to determine threshold voltage and transconductance. At 77 K the subthreshold slopes indicated no observed buildup of interface states in any of the transistors. Furthermore, all transistors experienced very little change in the transconductance. Typical negative shifts in threshold voltage as dose increased were observed in all of …

Go to article

Model Of A Single Impurity In A Wide Bandgap Semiconductor Describing Electric Field Screening, Anthony N. Dills Dec 1994

Model Of A Single Impurity In A Wide Bandgap Semiconductor Describing Electric Field Screening, Anthony N. Dills

Theses and Dissertations

A mathematical model of the influence on electric field screening arising from a single impurity in a wide bandgap semiconductor has been numerically investigated and compared with analytically derived solutions. The parameter set chosen to perform the comparison of analytical solution and numerical solution is based upon a bismuth silicate crystal. Both the analytical calculations and the numerical calculations are an attempt to mathematically model the internal electric field within a semiconductor. Two types of impurities were looked at: a single donor level and a single trap impurity level. In general, after an abrupt application of a voltage across the …

Go to article

Photoluminescence Spectroscopy Of 4h- And 6h-Sic, William A. Davis Dec 1994

Photoluminescence Spectroscopy Of 4h- And 6h-Sic, William A. Davis

Theses and Dissertations

Typical undoped bulk grown SiC shows n- or p-type conductivity due to residual impurities such as nitrogen, boron, or aluminum. In order to produce high resistivity material, vanadium can be used as a compensating dopant. Since vanadium is an amphoteric dopant in SiC, it produces either a donor state, VSi4+(3d1) → VSi5+(3d0), or an acceptor state, VSi4+(3d1) → VSi3+(3d2). Thus, vanadium doping can compensate both n- and p-type conductivity. In this work, vanadium doped and undoped 4H- and 6H-SiC grown …

Go to article

Design, Fabrication, Modeling, And Optical Characterization Of Organic Polymer Nonlinear Directional Couplers, John N. Berry Dec 1994

Design, Fabrication, Modeling, And Optical Characterization Of Organic Polymer Nonlinear Directional Couplers, John N. Berry

Theses and Dissertations

This research was an investigation into the suitability of a recently developed polymer, polyphenylene, as a material for integrated optical circuits (IOCs). Polymers show great promise in the area of IOCs because of material processing advantages, compatibility with most existing integrated circuit technology, and relatively strong nonlinear optical characteristics. This thesis contains an overview of: dielectric waveguides, linear and nonlinear directional coupler theory; various models useful in the design and analysis of optical waveguides; the fabrication of three different waveguide designs; the experimental apparatus and procedure used to optically characterize the waveguides; and the experimental results of the characterization. Waveguiding …

Go to article

The Current Voltage Characteristics Of Electron Beam Controlled Thin Film Diamond Switches, Christopher Anthony Molina Oct 1994

The Current Voltage Characteristics Of Electron Beam Controlled Thin Film Diamond Switches, Christopher Anthony Molina

Electrical & Computer Engineering Theses & Dissertations

The dark current of natural diamond thin films and the induced current due to electron-beam irradiation was measured up to a range of 7000Ncm'. The contact material was aluminum, annealed and unannealed. Switching experiments were performed with electron energies ranging from 70keV to 172keV. The switching results obtained are strongly dependent on the biasing polarity, incident electron energy, and whether the contact is blocking or Ohmic in nature. A simple model which takes traps into consideration allows us to explain the various switching responses. The range of electrons which define, in part, the switch mode was measured for one sample …

Go to article

Transient Simulations And Modelling Of Semi-Insulating Gaas Photoconductive Switches, Prasun Kumar Raha Jul 1994

Transient Simulations And Modelling Of Semi-Insulating Gaas Photoconductive Switches, Prasun Kumar Raha

Electrical & Computer Engineering Theses & Dissertations

The primary objective of this thesis is to develop a one-dimensional transient simulator for Photoconductive Semiconductor Switches (PCSS) taking into consideration the material characteristics, the internal physical effects, and the external circuit. Simulations have been performed to study the device behavior at different voltage levels for copper-doped silicon-compensated GaAs material, though other materials could easily be simulated by changing the parameters. The model includes hole transport, and the results demonstrate the effect of hole injection, with and without recombination centers. In addition to developing a one-dimensional transient simulator, the role of various physical effects, such as the field-dependence of trapping …

Go to article

Light Injection From An Active Cladding To The Core Of A Fiber Optic Fluorosensor, Alvin Leon Bryant Jul 1993

Light Injection From An Active Cladding To The Core Of A Fiber Optic Fluorosensor, Alvin Leon Bryant

Electrical & Computer Engineering Theses & Dissertations

A fluorosensor works on the basis of light injection from the clad into the core of an optical fiber. The sensitivity of such a sensor depends on the efficiency of light injection. Conditions necessary for a high injection efficiency are experimentally determined. The refractive index difference between the core and the clad,ncore -nclad, must be maximized to achieve a high injection efficiency. Since an air clad has the least refractive index, a bare core fiber will have a maximum efficiency. Standard optical fibers used for communication employ a minimum value for ncore -nclad, in order …

Go to article

First Prev Next Last