Semiconductor and Optical Materials Commons^™

System And Method For Identifying Electrical Properties Of Integrate Circuits, Mary Y. Lanzerotti

AFIT Patents

A new method for displaying electrical properties for integrated circuit (IC) layout designs provides for improved human visualization of those properties and comparison of as designed layout design parameters to as specified layout design parameters and to as manufactured layout parameters. The method starts with a circuitry as designed layout in a first digital format, extracts values for electrical properties from that circuitry as designed layout then annotates those values back into the first digital format. The annotated circuitry as designed layout is then converted from the first digital format to a second digital format that can be converted to …

Electron Beam Induced Deposition Of Highly Conductive Copper Nanowires From Bulk Liquids, Amjad M. Syam

Theses and Dissertations--Electrical and Computer Engineering

Electron-beam induced deposition (EBID) is a position-controlled technique that can directly fabricate nanometer-sized structures in functional materials. In the standard process, a gaseous precursor delivers the desired substance to the substrate for deposition. However, the material purity from these precursors is typically poor, which often negatively affects the functional properties of the deposit. Recently, bulk liquid precursors have been investigated as promising reactants for high purity deposition without the need for post-processing. In this work, EBID from bulk liquids is shown to yield highly conductive nanowire deposits. Aqueous solutions containing copper sulfate (CuSO₄) and sulfuric acid (H_{2 …}

The Dawn Of New Quantum Dots: Synthesis And Characterization Of Ge1-Xsnx Nanocrystals For Tunable Bandgaps., Richard J. Esteves

Theses and Dissertations

Ge_1-xSn_x alloys are among a small class of benign semiconductors with composition tunable bandgaps in the near-infrared spectrum. As the amount of Sn is increased the band energy decreases and a transition from indirect to direct band structure occurs. Hence, they are prime candidates for fabrication of Si-compatible electronic and photonic devices, field effect transistors, and novel charge storage device applications. Success has been achieved with the growth of Ge_1-xSn_x thin film alloys with Sn compositions up to 34%. However, the synthesis of nanocrystalline alloys has proven difficult due to larger discrepancies (~14%) in …

Nanosphere Lithography And Its Application In Rapid And Economic Fabrication Of Plasmonic Hydrogenated Amorphous Silicon Photovoltaic Devices, Chenlong Zhang

Dissertations, Master's Theses and Master's Reports

Solar photovoltaic (PV) devices harvest energy from solar radiation and convert it to electricity. PV technologies, as an alternative to traditional fossil fuels, use clean and renewable energy while minimizing pollution. For decades researchers have been developing thin film solar cells as an important alternatives to the relatively expensive bulk crystal solar cell technology. Among those, hydrogenated amorphous silicon (a-Si:H) solar cells prevails for good efficiency, non-toxic and materially abundant nature. However, a-Si:H thickness must be minimized to prevent light induced degradation, so optical enhancement is necessary. Light manipulation has to be applied and carefully engineered to trap light within …

Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian

Theses and Dissertations

Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that …

Ellipsometric Characterization Of Silicon And Carbon Junctions For Advanced Electronics, Alexander G. Boosalis

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Ellipsometry has long been a valuable technique for the optical characterization of layered systems and thin films. While simple systems like epitaxial silicon dioxide are easily characterized, complex systems of silicon and carbon junctions have proven difficult to analyze. Traditional model dielectric functions for layered silicon homojunctions, a system with a similar structure to modern transistors, often have correlated parameters during ellipsometric data analysis. Similarly, epitaxial graphene as grown from thermal sublimation of silicon from silicon carbide or through chemical vapor deposition, tend to have model dielectric function parameters that correlate with the optical thickness of the graphene due to …

Minimizing Sheet Resistance Of Organic Photovoltaic Cell Top Contact Electrode Layer: Silver Nanowire Concentration Vs. Conductive Polymer Doping Concentration, Caitlyn Cook

Materials Engineering

The top contact electrode layers of nine organic photovoltaic cells were prepared with two varying factors: three Silver nanowire (AgNW) densities deposited on a conductive polymer doped with three concentrations. Silver’s low sheet resistance of 20-Ω/sq is hypothesized to lower the sheet resistance of the anode layer and thus enhance the overall efficiency of the cell. Four-point probe measurements indicated that increasing AgNW density in the top contact electrode layer of an organic photovoltaic cell significantly reduces sheet resistance from 52.2k-Ω/sq to 18.0 Ω/sq. Although an increase in doping concentration of the conductive polymer reduced sheet resistance in low AgNW …

Generalized Ellipsometry Analysis Of Anisotropic Nanoporous Media: Polymer-Infiltrated Nanocolumnar And Inverse-Column Polymeric Films, Dan Liang

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Characterization of the structural and optical properties is a subject of significance for nanoporous material research. However, it remains a challenge to find non-destructive methods for investigating the anisotropy of porous thin films with three-dimensional nanostructures. In this thesis, a generalized ellipsometry (GE) analysis approach is employed to study two types of anisotropic nanoporous media: slanted columnar thin films (SCTFs) with polymer infiltration and inverse-SCTF polymeric films. The thesis presents the physical properties obtained from GE analysis, including porosity, columnar shape, principal optical constants, birefringence, etc.

The thesis reports on using a GE analysis approach, combining the homogeneous biaxial layer …

Interstitial Silicon Ions In Rutile Tio2 Crystals, Eric M. Golden, Nancy C. Giles, Shan Yang, Larry E. Halliburton

Faculty Publications

Electron paramagnetic resonance (EPR) is used to identify a new and unique photoactive silicon-related point defect in single crystals of rutile TiO₂. The importance of this defect lies in its assignment to interstitial silicon ions and the unexpected establishment of silicon impurities as a major hole trap in TiO₂. Principal g values of this new S=1/2 center are 1.9159, 1.9377, and 1.9668 with principal axes along the [¯110],[001], and [110] directions, respectively. Hyperfine structure in the EPR spectrum shows the unpaired spin interacting equally with two Ti nuclei and unequally with two Si nuclei. These silicon …

Influence Of Resonant And Non-Resonant Vibrational Excitation Of Ammonia Molecules In Gallium Nitride Synthesis, Hossein Rabiee Golgir, Yunshen Zhou, Kamran Keramatnejad, Yongfeng Lu

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Attempts on the selective promotion of gallium nitride (GaN) growth were investigated by deploying laserassisted vibrational excitation of reactant molecules, which deposits energy selectively into specific molecules and activate the molecules towards the selected reaction pathways. Laser-assisted metal organic chemical vapor deposition (LMOCVD) of GaN was studied using a wavelength-tunable CO2 laser. The NH-wagging modes (υ2) of ammonia (NH3) precursor molecules are strongly infrared active and perfectly match the emission line of the CO2 laser at 9.219, 10.350, and 10.719 μm. On- and off-resonance excitations of molecules were performed via tuning the incident laser wavelengths at on-resonant wavelength 9.219 μm …

Monolithic Optofluidic Ring Resonator Lasers Created By Femtosecond Laser Nanofabrication, Hengky Chandrahalim, Qiushu Chen, Ali A. Said, Mark Dugan, Xudong Fan

Faculty Publications

We designed, fabricated, and characterized a monolithically integrated optofluidic ring resonator laser that is mechanically, thermally, and chemically robust. The entire device, including the ring resonator channel and sample delivery microfluidics, was created in a block of fused-silica glass using a 3-dimensional femtosecond laser writing process. The gain medium, composed of Rhodamine 6G (R6G) dissolved in quinoline, was flowed through the ring resonator. Lasing was achieved at a pump threshold of approximately 15 μJ/mm². Detailed analysis shows that the Q-factor of the optofluidic ring resonator is 3.3 × 10⁴, which is limited by both solvent …

Tunable Optical Nanocavity Of Iron-Garnet With A Buried Metal Layer, Alexey N. Kuz'michev, Lars E. Kreilkamp, Mohammed Nur-E-Alam, Evgeni Bezus, Mikhail Vasilev, Iliya A. Akimov, Kamal Alameh, Manfred Bayer, Vladimir I. Belotelov

Research outputs 2014 to 2021

We report on the fabrication and characterization of a novel magnetophotonic structure designed as iron garnet based magneto-optical nanoresonator cavity constrained by two noble metal mirrors. Since the iron garnet layer requires annealing at high temperatures, the fabrication process can be rather challenging. Special approaches for the protection of metal layers against oxidation and morphological changes along with a special plasma-assisted polishing of the iron garnet layer surface were used to achieve a 10-fold enhancement of the Faraday rotation angle (up to 10.8°=μm) within a special resonance peak of 12 nm (FWHM) linewidth at a wavelength of 772 nm, in …

3d Printing, Open-Source Technology And Their Applications In Research, Chenlong Zhang

Dissertations, Master's Theses and Master's Reports

Open-source software received tremendous success as it drives down the cost of software and expand the distribution. Open-source hardware, as part of the open-source movement, has just risen into public attention for its potential to further drive down the cost of all kinds of manufacturing goods and reshape the manufacture chain. In this report we explores the history, development and the future of open-source hardware project, summarizing the opportunities, challenges and possible solutions. 3D printing is demonstrated as a booster to assist open-source hardware’s development. Low-cost 3D printer enables at-home and in-time fabrication, the download-print-use-improve-distribute cycle is established to encourage …

Performance Analysis Of A Hybrid Raman Optical Parametric Amplifier In The O- And E-Bands For Cwdm Pons, Sasanthi Peiris, Nicolas Madamopoulos, Neophytos A. Antoniades, Dwight Richards, Roger Dorsinville

Publications and Research

We describe a hybrid Raman-optical parametric amplifier (HROPA) operating at the O- and E-bands and designed for coarse wavelength division multiplexed (CWDM) passive optical networks (PONs). We present the mathematical model and simulation results for the optimization of this HROPA design. Our analysis shows that separating the two amplification processes allows for optimization of each one separately, e.g., proper selection of pump optical powers and wavelengths to achieve maximum gain bandwidth and low gain ripple. Furthermore, we show that the proper design of optical filters incorporated in the HROPA architecture can suppress idlers generated during the OPA process, as well …

Gesn Light-Emitting Devices, Yiyin Zhou

Graduate Theses and Dissertations

Silicon based optoelectronic devices have been investigated for decades. However, due to the indirect band gap nature of Si and Ge, developing of efficient light-emitting source on Si is still a challenging topic. GeSn based optoelectronic devices have the great potential to overcome this deficiency for several reasons. By adding more fraction of Sn into Ge, GeSn band gap could be reduced. The narrowed band gap could be developed for near to mid infrared applications. The alloy can even become the direct band gap material with a large Sn composition (beyond 8%). This feature could enhance the light emission from …

Investigation Of The Dynamics Of Photocarriers During Photoelectrochemical Water Splitting By Combination Of Photoelectrochemistry And Transient Absorption Spectroscopy, Wen-Hua Leng

Journal of Electrochemistry

Semiconductor photoelectrochemical hydrogen production is an important and promising technology for utilizing solar energy. The efficiency of hydrogen production depends on the efficiencies of separation and transport of photo-generated carriers. A deep understanding of the behavior of these processes has guiding significance for designing efficient solar hydrogen device. photoelectrochemical and transient absorption spectroscopy methods are powerful tool for studying the microscopic dynamics and mechanism of photocatalytic reaction. This review describes the part of the latest results of the author regarding the semiconductor photoelectrochemical hydrogen production obtained by these methods,and the problems and future research priorities in this field are proposed.

Polymer-Based Thermoelectric Devices, Stuart W. Hilsmier, Edward P. Tomlinson, Bryan Boudouris

The Summer Undergraduate Research Fellowship (SURF) Symposium

Currently, over 50% of all energy generated in the US is lost as waste heat, and thermoelectric generators offer a promising means to recoup some of this energy, if their efficiency is improved. While organic thermoelectric materials lack the efficiency of their inorganic counterparts, they are composed of highly abundant resources and have low temperature processing conditions. Recently, a new class of redox-active polymers, radical polymers, has exhibited high electrical conductivity in an entirely amorphous medium. In addition, these radical polymers have a simple synthetic scheme and can be highly tunable to provide desired electrical properties. In this study, the …

Development Of A Nanomanufacturing Process To Produce Atomically Thin Black Phosphorus, Andrew Stephens, Zhe Luo, Xianfan Xu

The Summer Undergraduate Research Fellowship (SURF) Symposium

Atomically thin black phosphorus (phosphorene) has both unique and desirable properties that differ from bulk black phosphorus. Unlike graphene, phosphorene has a bandgap, which makes it potentially useful for applications in the next generation of transistors. Large-scale applications of phosphorene, like other 2D materials, are limited by current production methods. The most common method of making phosphorene is mechanical exfoliation, which can only produce small and irregular quantities. In this work we investigate a top-down method of producing phosphorene by using a scanning ultrafast laser to thin black phosphorus flakes. Because the bandgap of phosphorene increases as layers are removed, …

The Synthesis And Characterization Of Copper Indium Sulfide And Cadmium Selenide Nanocrystals And Their Applications In Photodetectors, Zachary T. Bever

Electrical Engineering Undergraduate Honors Theses

Semiconductor nanocrystals are a topic of much interest in electrical engineering. Their use has been explored for many applications. This paper investigates the synthesis and characterization of CuInS2 and CdSe nanocrystals. As the nanocrystals were left in reaction for increasing amounts of time, the bandgap of the material decreased as the nanocrystal size increased due to the quantum confinement effect. The CdSe nanocrystals were then investigated in a photodetector application which achieved a detectivity on the order of 10^9 cmHz^(1/2)W^(-1).

Investigation Of Degradation Effects Due To Gate Stress In Gan-On-Si High Electron Mobility Transistors Through Analysis Of Low Frequency Noise, Michael Curtis Meyer Masuda

Master's Theses

Gallium Nitride (GaN) high electron mobility transistors (HEMT) have superior performance characteristics compared to Silicon (Si) and Gallium Arsenide (GaAs) based transistors. GaN is a wide bandgap semiconductor which allows it to operate at higher breakdown voltages and power. Unlike traditional semiconductor devices, the GaN HEMT channel region is undoped and relies on the piezoelectric effect created at the GaN and Aluminum Gallium Nitride (AlGaN) heterojunction to create a conduction channel in the form of a quantum well known as the two dimensional electron gas (2DEG). Because the GaN HEMTs are undoped, these devices have higher electron mobility crucial for …

Triplet Ground State Of The Neutral Oxygen-Vacancy Donor In Rutile Tio2, A. T. Brant, Eric M. Golden, Nancy C. Giles, Shan Yang, M. A. R. Sarker, S. Watauchi, M. Nagao, I. Tanaka, D. A. Tryk, A. Manivannan, Larry E. Halliburton

Faculty Publications

Electron paramagnetic resonance (EPR) is used to investigate the triplet (S = 1) ground state of the neutral oxygen vacancy in bulk rutile TiO₂ crystals. This shallow donor consists of an oxygen vacancy with two nearest-neighbor, exchange-coupled ³⁺ ions located along the [001] direction and equidistant from the vacancy. The spins of the two trapped electrons, one at each ³⁺ ion, align parallel to give the S = 1 state. These neutral oxygen vacancies are formed near 25 K in as-grown oxidized TiO₂ crystals by illuminating with sub-band-gap 442 nm laser light. The angular dependence of the EPR …

Spectroscopy Studies Of Straincompensated Mid-Infrared Qcl Active Regions On Misoriented Substrates, Gregory Edward Triplett, Justin Grayer, Charles Meyer, Emily Cheng, Denzil Roberts

Electrical and Computer Engineering Publications

In this work, we perform spectroscopic studies of AlGaAs/InGaAs quantum cascade laser structures that demonstrate frequency mixing using strain-compensated active regions. Using a three-quantum well design based on diagonal transitions, we incorporate strain in the active region using single and double well configurations on various surface planes (100) and (111). We observe the influence of piezoelectric properties in molecular beam epitaxy grown structures, where the addition of indium in the GaAs matrix increases the band bending in between injector regions and demonstrates a strong dependence on process conditions that include sample preparation, deposition rates, mole fraction, and enhanced surface diffusion …

Orientation-Dependent Pseudomorphic Growth Of Inas For Use In Lattice-Mismatched Mid-Infrared Photonic Structures, Gregory Edward Triplett, Charles Meyer, Emily Cheng

Electrical and Computer Engineering Publications

In this study, InAs was deposited on GaAs (100) and GaAs (111)B 2 degrees towardssubstrates for the purpose of differentiating the InAs growth mode stemming from strain and then analyzed using in-situ reflection high energy electron diffraction, scanning electron microscopy, Raman spectroscopy, reflectance spectroscopy, and atomic force microscopy. The procession of InAs deposition throughout a range of deposition conditions results in assorted forms of strain relief revealing that, despite lattice mismatch for InAs on GaAs (approximately 7%), InAs does not necessarily result in typical quantum dot/wire formation on (111) surfaces, but instead proceeds two-dimensionally due primarily to the surface orientation.

Polarization Of Bi2te3 Thin Film In A Floating-Gate Capacitor Structure, Hui Yuan, Kai Zhang, Haitao Li, Hao Zhu, John E. Bonevich, Helmut Baumgart, Curt A. Richter, Qiliang Li

Electrical & Computer Engineering Faculty Publications

Metal-Oxide-Semiconductor (MOS) capacitors with Bi₂Te₃ thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi₂Te₃ thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33 eV for separating the electron and hole pairs in the bulk of Bi₂Te₃, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent …

Stm Study Of Pulsed Laser Assisted Growth Of Ge Quantum Dot On Si(1 0 0)-(2 × 1), Ali Orguz Er, Hani E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Ge quantum dot formation on Si(1 0 0)-(2 × 1) by nanosecond pulsed laser deposition under laser excitation was investigated. Scanning tunneling microscopy was used to probe the growth mode and morphology. Excitation was performed during deposition using laser energy density of 25-100 mJ/cm ². Faceted islands were achieved at a substrate temperature of ∼250 °C only when using laser excitation. The island morphology changes with increased laser excitation energy density although the faceting of the individual islands remains the same. The size of the major length of islands increases with the excitation laser energy density. A purely electronic …

Investigation Of The Effects Of Rapid Thermal Annealing On Mbe Grown Gaasbi/Gaas Heterostructures For Optoelectronic Devices, Perry C. Grant

Graduate Theses and Dissertations

High efficiency optoelectronic devices rely on high quality materials making up the device structure. The scope of this thesis investigates the effectiveness of rapid thermal annealing (RTA) at improving the material quality of GaAsBi/GaAs heterostructures. During the fabrication of a device, the contacts of the device had the rapid thermal annealing process accomplished to produce ohmic contacts and this research explored if this annealing treatment degraded the quantum wells that made up the active region of a device. To investigate these effects, a system to measure the photoluminescence of the material system was constructed utilizing Fourier Transform Infrared Spectroscopy. The …

Zinc Oxide Nanorod Based Ultraviolet Detectors With Wheatstone Bridge Design, Arun Vasudevan

Graduate Theses and Dissertations

This research work, for the first time, investigated metal semiconductor-metal (MSM) zine oxide (ZnO) nanorod based ultra-violet (UV) detectors having a Wheatstone bridge design with a high

responsivity at room temperature and above, as well as a responsivity that was largely independent of the change in ambient conditions. The ZnO nanorods which acted as the sensing element of the detector were grown by a chemical growth technique. Studies were conducted to determine the effects on ZnO nanorod properties by varying the concentration of the chemicals used for the rod growth. These studies showed how the rod diameter and the deposition …

Monodentate, Bidentate And Photocrosslinkable Thiol Ligands For Improving Aqueous Biocompatible Quantum Dots, Hiroko Takeuchi

Graduate Theses and Dissertations

Water-soluble Quantum Dots (QDs) are highly sensitive fluorescent probes that are often used to study biological species. One of the most common ways to render QDs water-soluble for such applications is to apply hydrophilic thiolated ligands to the QD surface. However, these ligands are labile and can be easily exchanged on the QD surface, which can severely limit their application. As one way to overcome this limitation while maintaining a small colloidal size of QDs, we developed a method to stabilize hydrophilic thiolated ligands on the surface of QDs through the formation of a crosslinked shell using a photocrosslinking approach. …

Silver Oxide-Graphene Sensor For Hydrogen Peroxide, Austin D. Scherbarth, L Stanciu

The Summer Undergraduate Research Fellowship (SURF) Symposium

A nonenzymatic, amperometric sensor for Hydrogen Peroxide (H₂O₂) was designed by drop coating glassy carbon electrodes (GCEs) with Silver Oxide (Ag₂O). Combining Ag₂O with Graphene Oxide and a polymer, PEDOT, was also attempted in order to increase stability and electrochemical properties. Using metal oxides along with Graphene Oxide for sensors has been done quite a bit, but Ag₂O itself has not been research extensively. So, in order to produce the best H₂O₂ sensor, the configuration of all components had to be optimized. Three different Ag₂O …

Stanford Stratified Structure Solver (S4) Simulation Tool, Chang Liu, Xufeng Wang, Peter Bermel

The Summer Undergraduate Research Fellowship (SURF) Symposium

The Stanford Stratified Structure Solver (S4) developed in 2012 allows for fast, accurate prediction of optical propagation through complex 3D structures. However, there have been two key challenges preventing wider use to date: the use of a specialized control language, and the difficulty of incorporating realistic materials parameters. In this project, both concerns have been addressed. We have constructed a graphical user interface as an alternative, using the open-source Rappture platform on nanoHUB. This has been combined with a comprehensive materials database known as PhotonicsDB, which incorporates materials optical data drawn from carefully vetted sources. An Octave script file was …