Semiconductor and Optical Materials Commons^™

Studies Of Initial Growth Of Gan On Inn, Alaa Alnami

Graduate Theses and Dissertations

III-nitride materials have recently attracted much attention for applications in both the microelectronics and optoelectronics. For optoelectronic devices, III-nitride materials with tunable energy band gaps can be used as the active region of devices to enhance the absorption or emission. A such material is indium nitride (InN), which along with gallium nitride (GaN) and aluminum nitride (AlN) embody the very real promise of forming the basis of a broad spectrum, a high efficiency solar cell. One of the remaining complications in incorporating InN into a solar cell design is the effects of the high temperature growth of the GaN crystal …

Coupling Of Light's Orbital Angular Momentum To A Quantum Dot Ensemble, Alaa A. Bahamran

Electronic Theses and Dissertations

We theoretically and experimentally investigate the transfer of orbital angular momentum from light to an ensemble of semiconductor-based nanostructures composed of lead sulfide quantum dots. Using an ensemble of quantum dots offers a higher cross-section and more absorption of twisted light fields compared to experimentally challenging single-nanostructure measurements. However, each quantum dot (except for on-center) sees a displaced light beam parallel to its own axis of symmetry. The transition matrix elements for the light-matter interaction are calculated by expressing the displaced light beam in terms of the appropriate light field centered on the nanoparticles. The resulting transition rate induced by …

Scanning Probe Microscopy Measurements On 2d Materials And Iridates, Armin Ansary

Theses and Dissertations--Physics and Astronomy

In the past two decades, there has been a quest to understand and utilize novel materials such as iridates and two-dimensional (2D) materials. These classes of materials show a lot of interesting properties both in theoretical predictions as well as experimental results. Physical properties of some of these materials have been investigated using scanning probe measurements, along with other techniques.

One-dimensional (1D) catalytic etching was investigated in few-layer hexagonal boron nitride (hBN) films. Etching of hBN was shown to share several similarities with that of graphitic films. As in graphitic films, etch tracks in hBN commenced at film edges and …

Transient Transmission Oscillations In Doped And Undoped Lithium Niobate Induced By Near-Infrared Femtosecond Pulses, Bryan J. Crossman, Gregory J. Taft

Physics Faculty Publications

Transient transmission oscillations in X-cut and Z-cut congruent, iron-doped, and magnesium-doped lithium niobate samples were measured using 50 fs, 800 nm, 0.5 nJ pulses from a self-mode-locked Ti:sapphire laser in an optical pump–probe system. Several Raman-active oscillation modes excited by these pulses were observed as changes in the transmitted probe intensity versus time delay between the pump and probe pulses. The samples were rotated to determine how the incident polarization of the pump pulses affects the mode excitations. The observed Raman-active oscillations correspond to previously reported symmetry modes measured with traditional, continuous-wave, Raman spectroscopy using the same scattering …

Modeling Recombination In Solar Cells, Paul Chery

Macalester Journal of Physics and Astronomy

Solar cells are a competitive alternative to nonrenewable energy sources such as fossil fuels. However, the efficiency of these devices is limited by photogenerated carrier recombination. We use a finite difference numerical model to study recombination phenomena in the absorber layer of solar cells including alternate recombination models and the effects of spatial distribution of recombination centers. We compare the effect of using the constant lifetime approximation for recombination to the full Shockley-Read-Hall expression in Silicon solar cells and find that the constant lifetime approximation holds for high defect densities but not for high photon flux densities. Finally, we simulate …

Photoluminescence From Gan Co-Doped With C And Si, Mykhailo Vorobiov

Theses and Dissertations

This thesis devoted to the experimental studies of yellow and blue luminescence (YL and BL relatively) bands in Gallium Nitride samples doped with C and Si. The band BL_C was at first observed in the steady-state photoluminescence spectrum under high excitation intensities and discerned from BL1 and BL2 bands appearing in the same region of the spectrum. Using the time-resolved photoluminescence spectrum, we were able to determine the shape of the BL_C and its position at 2.87 eV. Internal quantum efficiency of the YL band was estimated to be 90\%. The hole capture coefficient of the BL_{C …}

Structural, Transport, And Topological Properties Induced At Complex-Oxide Hetero-Interfaces, Justin K. Thompson

Theses and Dissertations--Physics and Astronomy

Complex-oxides have seen an enormous amount of attention in the realm of Condensed Matter Physics and Materials Science/Engineering over the last several decades. Their ability to host a wide variety of novel physical properties has even caused them to be exploited commercially as dielectric, metallic and magnetic materials. Indeed, since the discovery of high temperature superconductivity in the “Cuprates” in the late 1980’s there has been an explosion of activity involving complex-oxides. Further, as the experimental techniques and equipment for fabricating thin films and heterostructures of these materials has improved over the last several decades, the search for new and …

Generalized Ellipsometry On Complex Nanostructures And Low-Symmetry Materials, Alyssa Mock

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

In this thesis, complex anisotropic materials are investigated and characterized by generalized ellipsometry. In recent years, anisotropic materials have gained considerable interest for novel applications in electronic and optoelectronic devices, mostly due to unique properties that originate from reduced crystal symmetry. Examples include white solid-state lighting devices which have become ubiquitous just recently, and the emergence of high-power, high-voltage electronic transistors and switches in all-electric vehicles. The incorporation of single crystalline material with low crystal symmetry into novel device structures requires reconsideration of existing optical characterization approaches. Here, the generalized ellipsometry concept is extended to include applications for materials with …

Artificial Olfactory System For Multi-Component Analysis Of Gas Mixtures., Alexander Aleksandrovich Larin

Electronic Theses and Dissertations

Gas analysis is an important part of our world and gas sensing technology is becoming more essential for various aspects of our life. A novel approach for gas mixture analysis by using portable gas chromatography in combination with an array of highly integrated and selective metal oxide (MOX) sensors has been studied. We developed a system with small size (7 x 13 x 16 inches), low power consumption (~10 W) and absence of special carrier gases designed for portable field analysis (assuming apriori calibration). Low ppb and even sub-ppb level of detection for some VOCs was achieved during the analysis …

Superconductivity At Т≈200 K In Bismuth Cuprates Synthesized Using Solar Energy, J. Chigvinadze, Juana Acrivos, S. Ashimov, D. Gulamova, G. Donadze

Faculty Publications, Chemistry

When investigating low-frequency (0.1 Hz) oscillations of multiphase high-temperature cuprate superconductors (HTCS) Bi1,7Pb0,3Sr2Ca(n-1)CunOy (n=2-30), a wide attenuation peak (ΔT~100 К) with a maximum at Т≈200 К was detected. This peak was particularly pronounced in field cooling (FC) experiments, i.e. after abrupt cooling of the sample in the external magnetic field at the temperature Т<Тс with subsequent slow warming up to room temperature with invariance of the applied field. The attenuation peak height depended on the preliminaryorientation (before cooling) of the samples θ in the measured permanent magnetic field Н. On the one hand, it is well known that, after the FC procedure and subsequent slow warming up, at the temperatures close to the critical temperature Тс, the attenuation peak associated with “melting” of the Abrikosov frozen vortex structure and its disappearance at Т >Тс is detected in monophase samples. At the same time, in most multiphase bismuth HTCS samples, synthesized using solar energy and superfast quenching of the melt, the attenuation peak with the maximum at Т≈200 К was observed.Depending on the conditions of synthesis, the attenuation peak could …

Fabrication And Study Of The Structure And Magnetism Of Rare-Earth Free Nanoclusters, Bhaskar Das

Department of Physics and Astronomy: Dissertations, Theses, and Student Research

No abstract provided.

Photonicstd-2d: Modeling Light Scattering In Periodic Multilayer Photonic Structures, Alexey Bondarev, Shaimaa Azzam, Zhaxylyk Kudyshev, Alexander V. Kildishev

The Summer Undergraduate Research Fellowship (SURF) Symposium

Efficient modeling of electromagnetic processes in optical and plasmonic metamaterials is important for enabling new and exciting ways to manipulate light for advanced applications. In this work, we put together a tool for numerical simulation of propagation of normally incident light through a nanostructured multilayer composite material. The user builds a unit cell of a given material layer-by-layer starting from a substrate up to a superstrate, splitting each layer further into segments. The segments are defined by width and material -- dielectric, metal or active medium. Simulations are performed with the finite difference time domain (FDTD) method. A database of …

Synthesis, Characterization, And Electronic Properties Of Novel 2d Materials : Transition Metal Dichalcogenides And Phosphorene., George Anderson

Electronic Theses and Dissertations

Scaling electronic devices has become paramount. The current work builds upon scaling efforts by developing novel synthesis methods and next generation sensing devices based on 2D materials. A new combination method utilizing thermal evaporation and chemical vapor deposition was developed and analyzed to show the possibilities of Transition Metal Dichalcogenide monolayers and heterostructures. The materials produced from the above process showed high degrees of compositional control in both spatial dimensions and chemical structure. Characterization shows controlled fabrication of heterostructures, which may pave the way for future band gap engineering possibilities. In addition, Phosphorene based field effect transistors, photodetectors, and gas …

The Effect Of Polarization And Ingan Quantum Well Shape In Multiple Quantum Well Light Emitting Diode Heterostructures, Patrick M. Mcbride

Master's Theses

Previous research in InGaN/GaN light emitting diodes (LEDs) employing semi-classical drift-diffusion models has used reduced polarization constants without much physical explanantion. This paper investigates possible physical explanations for this effective polarization reduction in InGaN LEDs through the use of the simulation software SiLENSe. One major problem of current LED simulations is the assumption of perfectly discrete transitions between the quantum well (QW) and blocking layers when experiments have shown this to not be the case. The In concentration profile within InGaN multiple quantum well (MQW) devices shows much smoother and delayed transitions indicative of indium diffusion and drift during …

Mott Transition And Electronic Structure In Complex Oxide Heterostructures, Jian Liu

Graduate Theses and Dissertations

Strongly correlated electron systems, particularly transition metal oxides, have been a focus of condensed matter physics for more than two decades since the discovery of high-temperature superconducting cuprates. Diverse competing phases emerge, spanning from exotic magnetism to unconventional superconductivity, in proximity to the localized-itinerant transition of Mott insulators. While studies were concentrated on bulk crystals, the recent rapid advance in synthesis has enabled fabrication of high-quality oxide heterostructures, offering a new route to create novel artificial quantum materials.

This dissertation details the investigation on ultrathin films and heterostructures of 3d⁷(t_2g⁶e_g¹) systems with …

Thermodynamic Limit To Photonic-Plasmonic Light-Trapping In Thin Films On Metals, Eric A. Schiff

Physics - All Scholarship

We calculate the maximum optical absorptance enhancements in thin semiconductor films on metals due to structures that diffuse light and couple it to surface plasmon polaritons. The calculations can be used to estimate plasmonic effects on light-trapping in solar cells. The calculations are based on the statistical distribution of energy in the electromagnetic modes of the structure, which include surface plasmon polariton modes at the metal interface as well as the trapped waveguide modes in the film. The enhancement has the form 4n²+nλ/h (n – film refractive index, λ – optical wavelength, h …

Chemical And Electronic Structure Of Surfaces And Interfaces In Compound Semiconductors, Sujitra Pookpanratana

UNLV Theses, Dissertations, Professional Papers, and Capstones

The interface formation between two different materials is important in applications for optoelectronic devices. Often, the success or performance of these devices is dependent on the formation of these heterojunctions. In this work, the surface and interfaces in such materials for optoelectronic devices are investigated by a suite of X-ray analytical techniques including X-ray photoelectron (XPS), X-ray excited Auger electron (XAES), and X-ray emission (XES) spectroscopies to provide novel insight.

For the group III-nitrides (e.g., AlxGa1-xN) used in many light emitting devices, a significant challenge exists to form an Ohmic contact. The electron affinities and band gaps of GaN and …

The Thermoluminescence Properties Of Manganese Doped Zns Nanophosphor., Khalid Humaid Zahir Al-Hinai

Student Works (2010-2019)

The thermoluminescence (TL) properties of Manganese (Mn) doped ZnS nanophosphors were investigated after gamma irradiation at room temperature. The ZnS:Mn nanophosphors were prepared by chemical precipitation method by using Zinc sulfate, Sodium sulfide and Manganese sulfate. 1 mole, 2 moles and 3 moles of Manganese sulfate were used to have different concentrations of Mn in doped ZnS. The formation of the nanophosphors was characterized by high resolution scanning electron microscopy FESEM, XRD and EDX. The obtained products consist of particles with the dimension about 85–150nm. Comparison between ZnS nanophosphors and commercial ZnS powder glow curves was studied. It was observed …

Oxidation-Induced Stacking Fault In (100) And (111) Silicon Wafers, Mei Keat Liang

Student Works (2000-2009)

Oxidation-induced stacking fault (OISF) dimension and density change on (100) and (111) wafers, as a result of repeated preferential etching were studied using AFM. optical microscope and angular polishing techniques. Density on (100) and (111) wafers is independent of surface removal up to 3.0µm. This indicates the single layer nature of OISF formed from the sand blasted wafer. Besides having higher density, OISFs from (100) wafer were longer than OISF from (111) wafer. OISF width increases linearly with surface removal however the length does not change significantly with surface removal. ln the OISF normal depth studies using angular polishing technique, …

Effects Of Argon Dilution Of Silane On The Optical Properties And Surface Morphology Of Hydrogenated Amorphous Silicon, Choon Kheam Lim

Student Works (2000-2009)

Hydrogenated amorphous silicon (a.Si:H) was prepared using the d.c plasma grow discharge system. Two sets of samples were prepared and studied. The first set of samples referred to as the high argon dilution films were prepared from the discharge of pure silane at flow-rate of 5sccm and silane at the same flow-rate diluted in argon at flow-rates of 5, 10 and 15sccm. Similarly, the second set of sample referred to as the low argon dilution films were prepared from the discharge of pure silane at flow-rate of20sccm and silane at the same flow-rate diluted in argon at the flow-rates mentioned …