Materials Science and Engineering Commons^™

Ruco To Extend The Scalability Of Ultra-Thin Direct Plate Liners, Daniel Verne Greenslit

Legacy Theses & Dissertations (2009 - 2024)

In traditional semiconductor technology a sputtered copper seed layer is used to improve the adhesion, microstucture, and electromigration characteristics of electrochemically deposited (ECD) copper. The seed layer is deposited on top of a Ta/TaN stack. The Ta layer acts as an adhesion and nucleation layer for the copper seed and the TaN serves as a diffusion barrier for the Cu. As the line widths continue to shrink, scaling each of these layers becomes more difficult. It would be advantageous for the interconnect to be composed of as much copper as possible, transitioning from the traditional liner seed stack to a …

Structure And Electronic Properties Of Pure And Nitrogen Doped Nanocrystalline Tungsten Oxide Thin Films, Vemnkata Rama Sesha Ravi Kumar Vemuri

Open Access Theses & Dissertations

Tungsten oxide (WO₃) is a multifunctional material which has applications in electronics, sensors, optoelectronics, and energy-related technologies. Recently, electronic structure modification of WO₃ to design novel photocatalysts has garnered significant attention. However, a fundamental understanding of nitrogen induced changes in the structure, morphology, surface/interface chemistry, and electronic properties of WO₃ is a prerequisite to producing materials with the desired functionality and performance. Also, understanding the effect of thermodynamic and processing variables is highly desirable in order to derive the structure-property relationships in the W-O/W-O-N material system. The present work was, therefore, focused on studying the effects …

Effect Of Thermal Annealing And Carbon Implantation On The Functional Properties Of Nanocomposite Tisin Coatings On Steel, Mohammad Shoeb Ahmed

Theses: Doctorates and Masters

This PhD research contributes to the part of advanced materials technology. The machining industry currently faces tremendous pressures with the need for durable cutting tools suitable for eco-friendly high speed machining operations becoming acute. In this thesis innovative design and synthesis strategies are explored to tailor the properties of nanocomposite coatings. Advanced characterisation techniques are applied to identify the mechanisms that control the mechanical, tribological, and corrosion behaviours of these coatings. Cutting tools protected by these coatings are anticipated to exhibit a unique combination of superior toughness and greater resistance to wear and corrosion, providing significant economic and environmental benefits. …

Investigation Of Nbnx Thin Films And Nanoparticles Grown By Pulsed Laser Deposition And Thermal Diffusion, Ashraf Hassan Farha

Electrical & Computer Engineering Theses & Dissertations

Niobium nitride films (NbNx) were grown on Nb and Si (100) substrates using pulsed laser deposition (PLD), laser heating, and thermal diffusion methods. Niobium nitride films were deposited on Nb substrates using PLD with a Q-switched Nd: YAG laser (λ = 1064 nm, 40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, different nitrogen background pressures and deposition temperatures. The effect of changing PLD parameters for films done by PLD was studied. The seen observations establish guidelines for adjusting the laser parameters to achieve the desired morphology and phase of the grown NbNx films.

When the …

Applications Of High Throughput (Combinatorial) Methodologies To Electronic, Magnetic, Optical, And Energy-Related Materials, Martin L. Green, Ichiro Takeuchi, Jason R. Hattrick-Simpers

Faculty Publications

High throughput (combinatorial) materials science methodology is a relatively new research paradigm that offers the promise of rapid and efficient materials screening, optimization, and discovery. The paradigm started in the pharmaceutical industry but was rapidly adopted to accelerate materials research in a wide variety of areas. High throughput experiments are characterized by synthesis of a “library” sample that contains the materials variation of interest (typically composition), and rapid and localized measurement schemes that result in massive data sets. Because the data are collected at the same time on the same “library” sample, they can be highly uniform with respect to …

Pulse Sharpening Effects Of Thin Film Ferroelectric Transmission Lines, Robert J. Sleezer

Graduate Theses and Dissertations

Advances in material science have resulted in the development of electrically nonlinear high dielectric thin film ferroelectrics, which have led to new opportunities for the creation of novel devices. This dissertation investigated one such device: a low voltage nonlinear transmission line (NLTL). A finite element simulation of ferroelectric transmission lines showed that NLTLs are capable of creating shockwaves. Additionally, if the losses are kept sufficiently low, it was shown that voltage gain should be possible. Furthermore, a method of accounting for material dispersion was developed. Results from simulations including material dispersion showed that temporal solitons might be possible from a …

Effects Of Deposition Parameters And Oxygen Addition On Properties Of Sputtered Indium Tin Oxide Films, Badrul Munir, Rachmat Adhi Wibowo, Kim Kyoo Ho

Makara Journal of Technology

Indium tin oxide (ITO) films were sputtered on corning glass substrate. Oxygen admixture and sputtering deposition parameters were optimized to obtain the highest transparency as well as lowest resistivity. Structural, electrical and optical properties of the films were then examined. Increasing deposition rate and film thickness changed the crystallographic orientation from (222) to (400) and (440), as well as higher surface roughness. It was necessary to apply substrate heating during reposition to get films with better crystallinity. The lowest resistivity of 5.36 x 10-4 Ω•cm was obtained at 750 nm film thickness. The films’ resistivity was increased by addition of …

Plasma Enhanced Atomic Layer Deposition Of Cu Seed Layers At Low Process Temperatures, Jiajun Mao

Legacy Theses & Dissertations (2009 - 2024)

In conventional Cu interconnect fabrication, a sputtered copper seed layer is deposited before the electrochemically deposited (ECD) copper plating step. However, as interconnect dimensions scale down, non-conformal seed layer growth and subsequent voiding of metallized structures is becoming a critical issue. With its established excellent thickness controllability and film conformality, atomic layer deposition (ALD) is becoming an attractive deposition approach for the sub-24nm fabrication regime. However, in order to achieve a smooth and continuous seed layer deposition, a low process temperature (below 100oC) is needed, given the tendency of Cu agglomeration at elevated temperature. In this research, plasma enhanced ALD …

Growth Analysis Of (Ag,Cu)Inse2 Thin Films Via Real Time Spectroscopic Ellipsometry, S. A. Little, V. Ranjan, R. W. Collins, S. Marsillac

Electrical & Computer Engineering Faculty Publications

In situ and ex situ characterization methods have been applied to investigate the properties of (Ag,Cu)InSe₂ (ACIS) thin films. Data acquired from real time spectroscopic ellipsometry (RTSE) experiments were analyzed to extract the evolution of the nucleating, bulk, and surface roughness layer thicknesses. The evolution of these layer thicknesses suggests a transition from Volmer-Weber to Stranski-Krastanov type behavior when Cu is replaced by Ag. The complex dielectric functions of ACIS at both deposition and room temperature as a function of film composition were also extracted from the RTSE data, enabling parameterization of the alloy optical properties.

High Performance Magneto-Optic Garnet Materials For Integrated Optics And Photonics, Mohammad Alam

Theses: Doctorates and Masters

This work explores the preparation, characteristics and properties of highly bismuth (Bi) substituted, metal doped, iron garnet compounds and investigates their potential for various emerging applications in the visible and near infrared spectral regions.

Bi-substituted iron garnet and garnet-oxide nanocomposite films of generic composition type (Bi, Dy/Lu)3(Fe, Ga/Al)5O12 are prepared by using a radio frequency (RF) magnetron sputtering technique. The physical properties (crystallinity, film morphology, optical absorption spectra across the visible spectral range and the elemental composition of layers), and magneto-optic behaviour (Faraday rotation, hysteresis loops of Faraday rotation, and magnetic switching behaviour) of these sputtered garnet films are investigated …

A Study Of Wo3 And W0.95ti0.05o3 Thin Films Using Comparative Spectroscopy, James Heyward Howard

Open Access Theses & Dissertations

Tungsten oxide (WO3) is important and well-studied in materials science, particularly for sensor applications. In this research work, we consider the innovation of adding Ti to thin films of this material. Since the characteristics of any such material are strongly dependent on the conditions and methods used in its deposition, the main objective of this project is to provide a detailed spectroscopic characterization by Raman scattering, infrared absorption, and X-ray photoelectron spectroscopy (XPS) of WO3 and of W0.95Ti0.05O3. This characterization will be based on comparison of the morphology and composition of WO3-based thin films, grown by radio frequency magnetron reactive …

Giant Magnetostriction In Annealed Co1-XFeX Thin-Films, Dwight Hunter, Will Osborn, Ke Wang, Nataliya Kazantseva, Jason R. Hattrick-Simpers, Richard Suchoski, Ryota Takahashi, Marcus L. Young, Apurva Mehta, Leonid A. Bendersky, Same E. Lofland, Manfred Wuttig, Ichiro Takeuchi

Faculty Publications

Chemical and structural heterogeneity and the resulting interaction of coexisting phases can lead to extraordinary behaviours in oxides, as observed in piezoelectric materials at morphotropic phase boundaries and relaxor ferroelectrics. However, such phenomena are rare in metallic alloys. Here we show that, by tuning the presence of structural heterogeneity in textured Co_1−xFe_x thin films, effective magnetostriction λeff as large as 260 p.p.m. can be achieved at low-saturation field of ~10 mT. Assuming λ100 is the dominant component, this number translates to an upper limit of magnetostriction ofλ100≈5λeff >1,000 p.p.m. Microstructural analyses …

Improving The Efficiency Of Organic Solar Cells By Varying The Material Concentration In The Photoactive Layer, Kevin Anthony Latimer

Electrical & Computer Engineering Theses & Dissertations

Polymer-fullerene bulk heterojunction solar cells have been a rapidly improving technology over the past decade. To further improve the relatively low energy conversion efficiencies of these solar cells, several modifications need to be made to the overall device structure. Emerging technologies include cells that are fabricated with interfacial layers to facilitate charge transport, and tandem structures are being introduced to harness the absorption spectrum of polymers with varying bandgap energies.

When new structures are implemented, each layer of the cell must be optimized in order for the entire device to function efficiently. The most volatile layer of these devices is …

Ultrafast Electron Diffraction Study Of The Dynamics Of Antimony Thin Films And Nanoparticles, Mahmoud Abdel-Fattah

Electrical & Computer Engineering Theses & Dissertations

The ultrafast fast phenomena that take place following the application of a 120 fs laser pulse on 20 nm antimony thin films and 40 nm nanoparticles were studied using time-resolved electron diffraction. Samples are prepared by thermal evaporation, at small thickness (< 10 nm) antimony nanoparticles form while at larger thicknesses we get continuous thin films.

The samples are annealed and studied by static heating to determine their Debye temperatures, which were considerably less than the standard value. The thermal expansion under static heating also yielded the expansion coefficient of the sample material. Nanoparticle samples gave a very accurate thermal expansion coefficient (11 × 10^-6 K^-1).

Ultrafast time resolved electron diffraction …

Section Abstracts: Astronomy, Mathematics And Physics With Materials Science

Virginia Journal of Science

Abstracts for the Astronomy, Mathematics, and Physics with Materials Science Section for the 89th Annual Meeting of the Virginia Academy of Science, May 25-27, 2011, University of Richmond, Richmond VA.

Development Of High Band Gap Absorber And Buffer Materials For Thin Film Solar Cell Applications, Daniel Dwyer

Legacy Theses & Dissertations (2009 - 2024)

CuInGaSe₂ (CIGS) device efficiencies are the highest of the thin film absorber materials (vs. CdTe, α-Si, CuInSe₂). However, the band gap of the highest efficiency CIGS cells deviates from the expected ideal value predicted by models. Widening the band gap to the theoretically ideal value is one way to increase cell efficiencies. Widening the band gap can be accomplished in two ways; by finding a solution to the Ga-related defects which limit the open circuit voltage at high Ga ratios, or by utilizing different elemental combinations to form an alternative high band gap photoactive Cu-chalcopyrite (which includes …

Nucleation, Wetting And Agglomeration Of Copper And Copper-Alloy Thin Films On Metal Liner Surfaces, Stephanie Florence Labarbera

Legacy Theses & Dissertations (2009 - 2024)

One of the key challenges in fabricating narrower and higher aspect ratio interconnects using damascene technology has been achieving an ultra-thin (~2 nm) and continuous Cu seed coverage on trench sidewalls. The thin seed is prone to agglomeration because of poor Cu wetting on the Ta liner. Using in-situ conductance measurements, the effect of lowering the substrate temperature during Cu seed deposition has been studied on tantalum (Ta) and ruthenium (Ru) liner surfaces. On a Ta surface, it was found that lowering the deposition temperature to -65°C increases the nucleation rate of the Cu thin film, and reduces the minimum …

Correlation Between Preparation Parameters And Properties Of Molybdenum Back Contact Layer For Cigs Thin Film Solar Cells, Eigo Takahashi

Electronic Theses and Dissertations

Molybdenum (Mo) thin film back contact layers for thin film CuIn(1-x)GaxSe2 (CIGS) solar cells were deposited onto soda lime glass substrates using a direct current (DC) planar magnetron sputtering deposition technique. Requirements for the Mo thin film as a back contact layer for CIGS solar cells are various. Sheet resistance, contact resistance to the CIGS absorber, optical reflectance, surface morphology, and adhesion to the glass substrate are the most important properties that the Mo thin film back contact layer must satisfy. Experiments were carried out under various combinations of sputtering power and working gas pressure, for it is well known …

Rf And Structural Characterization Of Srf Thin Films, A.M. Valente-Feliciano, H.L. Phillips, C.E. Reece, J. Spradlin, X. Zhao, D. Gu, H. Baumgart, D. Beringer, R.A. Lukaszew, B. Xiao, K. Seo

Electrical & Computer Engineering Faculty Publications

In the past years, energetic vacuum deposition methods have been developed in different laboratories to improve Nb/Cu technology for superconducting cavities. JLab is pursuing energetic condensation deposition via Electron Cyclotron Resonance. As part of this study, the influence of the deposition energy on the material and RF properties of the Nb thin film is investigated. The film surface and structure analyses are conducted with various techniques like X-ray diffraction, Transmission Electron Microscopy, Auger Electron Spectroscopy and RHEED. The microwave properties of the films are characterized on 50 mm disk samples with a 7.5 GHz surface impedance characterization system. This paper …

Electronic And Structural Properties Of Molybdenum Thin Films As Determined By Real Time Spectroscopic Ellipsometry, J. D. Walker, H. Khatri, V. Ranjan, Jian Li, R. W. Collins, S. Marsillac

Electrical & Computer Engineering Faculty Publications

Walker, J.D., Khatri, H., Ranjan, V., Li, J., Collins, R.W., & Marsillac, S. (2009). Electronic and structural properties of molybdenum thin films as determined by real-time spectroscopic ellipsometry. Applied Physics Letters, 94(14). doi: 10.1063/1.3117222

Rf-Generated Ambient-Afterglow Plasma, Shariff Shakir, Bijan Pashaie, Shirshak K. Dhali

Electrical & Computer Engineering Faculty Publications

Atmospheric pressure plasmas have gained importance due to their potential application in polymer surface treatment, surface cleaning of metals, thin film deposition, and destruction of biological hazards. In this paper a radio-frequency driven atmospheric pressure afterglow plasma source in argon and helium is discussed. The light intensity measurement shows that the radio-frequency discharge is continuous in time unlike the intermittent nature of a low frequency dielectric-barrier discharge. The discharge, under ambient conditions, can be generated in argon, helium, and nitrogen. Spectroscopic measurements show that metastables are capable of producing oxygen atoms and other excited species. The argon afterglow, in particular, …

A Fe-Fd Hybrid Scheme For Solving Parabolic Two-Step Micro Heat Transport Equations In Irregularly Shaped Three Dimensional Double -Layered Thin Films Exposed To Ultrashort -Pulse Lasers, Brian R. Barron

Doctoral Dissertations

Multi-layer thin films are important components in many micro-electronic devices. These films are often used when a single film layer is insufficient to meet devices specifications. The continued reduction in component size has the side effect of increasing the thermal stress on these films and consequently the devices they comprise. Understanding the transfer of heat-energy at the micro-scale is important for thermal processing using a pulse-laser. Often, micro-voids may be found in processed devices. This is due to thermal expansion. Such defects may cause an amplification of neighboring defects resulting in severe damage and consequently the failure of the device. …

Self-Assembly Of Ge Quantum Dots On Si(100)- 2×1 By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Self-assembled Ge quantum dots are grown on Si(100)- 2×1 by pulsed laser deposition. The growth is studied by in situ reflection high-energy electron diffraction and postdeposition atomic force microscopy. After the completion of the wetting layer, transient hut clusters, faceted by different planes, are observed. When the height of these clusters exceeded a certain value, the facets developed into {305} planes. Some of these huts become {305}-faceted pyramids as the film mean thickness was increased. With further thickness increase, dome clusters developed on the expense of these pyramids. © 2005 American Institute of Physics. [DOI: 10.1063/1.1949285]

Computational Approaches To The Design And Analysis Of Stability Of Polypeptide Multilayer Thin Films, Bin Zheng

Doctoral Dissertations

The focus of this research is the development of computational approaches to understanding the physical basis of layer-by-layer assembly (LBL), a key methodology of nanomanufacturing. The results provided detailed information on structure which cannot be obtained directly by experiments.

The model systems chosen for study are polypeptide chains. Reasons for this are that polypeptides are no less polyelectrolytes than the more usual polyions, and one can control the primary structure of a polypeptide on a residue-by-residue basis using modern synthetic methods. Moreover, as peptides constitute one of the four major classes of biological macromolecules, research in this direction is expected …

Nonstoichiometry And Electrical Transport In Sc-Doped Zirconia, Igor Kosacki, Harlan U. Anderson, Yasunobu Mizutani, Kenji Ukai

Materials Science and Engineering Faculty Research & Creative Works

The results of electrical conductivity measurements on ZrO₂: Sc (ScSZ) ceramics as a function of oxygen activity and temperature are presented. The influence of the microstructure on electrical transport is discussed and the experimental data for dense microcrystalline specimens have been compared with those obtained for dense nanocrystalline thin films. From these results the electronic and ionic contribution to the electrical transport has been determined and correlated with microstructure. It has been found that nanocrystalline ScSZ films possess quite different nonstoichiometry compared with that observed for microcrystalline specimens in the fact that the electronic conductivity is enhanced so …

Microstructure-Electrical Conductivity Relationships In Nanocrystalline Ceria Thin Films, Toshio Suzuki, Igor Kosacki, Harlan U. Anderson

Materials Science and Engineering Faculty Research & Creative Works

A study of nanocrystalline oxide thin film processing and influence of microstructure on the electrical properties of nanocrystalline Gd³⁺-doped CeO₂ thin films was reported. Nanocrystalline films on sapphire substrate were prepared using a polymeric precursor spin coating technique. The grain size of these films depends upon the annealing temperatures and the dopant content, where higher content of dopant realized smaller grain size. The electrical conductivity of nanocrystalline Gd³⁺-doped CeO₂ thin films was studied as a function of temperature and oxygen activity and correlated with the grain size. The results show that the electronic conductivity …

Raman Scattering And Lattice Defects In Nanocrystalline Ceo2 Thin Films, Igor Kosacki, Toshio Suzuki, Harlan U. Anderson, Philippe Colomban

Materials Science and Engineering Faculty Research & Creative Works

The results of Raman scattering studies of nanocrystalline CeO₂ thin films are presented. The spectra have been described using the spatial correlation model from which the correlation length has been determined as a function of grain size. A direct comparison between the concentration of defects related to correlation length and CeO₂ non-stoichiometry has been achieved. The relationship between the lattice disorder and the form of the Raman spectra in nanocrystalline CeO₂ is discussed. © 2002 Elsevier Science B.V. All rights reserved.

Growth Dependant Properties Of Undoped And In-Situ Doped Chemically Deposited Cds Thin Films, Aaron John Reynolds

Theses : Honours

This research project examines the growth dependant properties and composition of Cadmium Sulfide thin films produced by the Chemical Bath Deposition Method. The specific areas investigated are the effect of deposition temperature, the effect of an Indium dopant on the films structure and properties, and the effects of post deposition processing such as annealing in air on the film composition. The chemical bath deposition apparatus used has been refined and tested to ensure that the films were grown in a more efficient manner than previously, with more control of the influencing deposition parameters such as temperature. Films grown by the …

Optical And Electrical Properties Of Cualse² Thin Films Obtained By Selenization Of Cu/Al/Cu... Al/Cu Layers Sequentially Deposited, J. C. Bernède, S. Marsillac, C. El Moctar, A. Conan

Electrical & Computer Engineering Faculty Publications

Optical and electrical properties of CuAlSe₂ thin films obtained by selenization of Cu/Al/Cu...Al/Cu layers sequentially deposited have been investigated. It is shown that the expected energy gap (2.67 eV) is measured for well crystallized films, whereas a slightly higher value is measured for films not so well crystallized. Raman diffusion also shows differences between well and poorly crystallized films with peaks corresponding to the reference powder for the former samples. A p-type conductivity is found whatever the crystalline quality of the samples. The conductivity of the films depends also strongly on their crystalline properties. When the films are badly …

Cualse² Thin Films Obtained By Chalcogenization, S. Marsillac, K. Benchouk, C. El Moctar, J. C. Bernède, J. Pouzet, A Khellil, M. Jamali

Electrical & Computer Engineering Faculty Publications

CuAlSe₂ thin films have been synthesized by chalcogenization of thin Cu and Al layers sequentially deposited by evaporation under vacuum. It is shown that CuAlSe₂ films are obtained with some Cu₂-_δSe and Se phases present at the surface. These surface phases are suppressed by annealing under vacuum and by chemical etching in a KCN solution. At the end of the process, the XRD spectrum demonstrates that textured CuAlSe₂ films have been obtained with preferential orientation of the crystallites along the (112) direction. The gap of the films is 2.7 eV as expected. The …