Materials Science and Engineering Commons^™

Synthesis And Physical Properties Of Group 14 Intermetallic Clathrates, Stevce Stefanoski

USF Tampa Graduate Theses and Dissertations

The search of materials relevant for thermoelectric and magnetocaloric applications, as well as materials that interact with light, is an important aspect of the materials science. Such materials can be used for solid-state power generation and refrigeration, as light sources, detectors, or controllers. Intermetallic clathrates have long been of interest for the materials science research. The promise these materials hold for useful applications ranges from thermoelectrics to photovoltaics and optoelectronics to potentially ultra-hard materials and magnetic cooling applications. Their unique physical properties are intimately related to their intriguing structural properties. Thus a fundamental understanding of the chemistry and physics of …

Fabrication Of Horizontal Silicon Nanowires Using A Thin Aluminum Film As A Catalyst, Khaja Hafeezuddin Mohammed

Graduate Theses and Dissertations

Silicon nanowires have been the topic of research in recent years for their significant attention from the electronics industry to grow even smaller electronic devices. The semiconductor industry is built on silicon. Silicon nanowires can be the building blocks for future nanoelectronic devices. Various techniques have also been reported in fabricating the silicon nanowires. But most of the techniques reported, grow vertical silicon nanowires. In the semiconductor industry, integrated circuits are designed and fabricated in a horizontal architecture i.e. the device layout is flat compared to the substrate. When vertical silicon nanowires are introduced in the semiconductor industry, a whole …

In-Situ Ellipsometry Characterization Of Anodically Grown Silicon Dioxide And Lithium Intercalation Into Silicon, Eric A. Montgomery

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

In this thesis, in-situ ellipsometry and electroanalytical investigations of two electrochemical processes are reported: including the formation of anodically grown silicon dioxide and the intercalation of lithium into silicon. Analysis of the ellipsometry data shows that the anodically grown silicon dioxide layer is uniform and has similar properties as thermally grown silicon dioxide. The lithium-ion intercalation data reveals non-uniform thin film formation, which requires further studies and development of appropriate ellipsometric optical models.

Advisers: Eva Schubert and Mathias Schubert

Preparation And Performance Of Carbon-Coated Si/C Composites, Li-Li Du, Quan-Chao Zhuang, Tao Wei, Yong-Li Cui, Zhi Sun, Shi-Gang Sun

Journal of Electrochemistry

Si/C composite for lithium ion batteries was obtained by pyrolyzing and ball-milling. The microstructure and component of the composite was characterized by SEM and XRD, the electrochemical performance was investigated by electrochemical impedance spectroscopy (EIS), cyclic voltammetry (CV) and galvano static charge-discharge tests. The results illustrate that the particle of Si/C composite prepared by pyrolysis exhibits inerratic morphology, uniform carbon-coating layer, good electrical conductivity, low resistance. The first intercalated-lithium capacity of the composite material is 4495 mAh/g; the first coulomb efficiency is 65.3%. From the second week the coulomb efficiency maintains 97%, and the capacity at the 100th cycle can …

Long Term Outdoor Testing Of Low Concentration Solar Modules, Lewis Fraas, James Avery, Leonid Minkin, H. X. Huang, Tim Hebrink, Robert F. Boehm

Mechanical Engineering Faculty Research

A 1‐axis carousel tracker equipped with four 3‐sun low‐concentration mirror modules has now been under test outdoors at the University of Nevada in Las Vegas (UNLV) for three years. There are three unique features associated with this unit. First, simple linear mirrors are used to reduce the amount of expensive single crystal silicon in order to potentially lower the module cost while potentially maintaining cell efficiencies over 20% and high module efficiency. Simple linear mirrors also allow the use of a single axis tracker. Second, the azimuth carousel tracker is also unique allowing trackers to be used on commercial building …

The Reactivity Of A Zr-Si Melt With B4c At Ultrahigh Temperatures, Alvaro Vega Sandate

Open Access Theses & Dissertations

Surfaces with exceptional properties are needed for next generation materials. Hypersonic re-entry space vehicles or turbines are subjected to both oxidizing and neutral environments and nose-caps or wings on such vehicles could easily reach operating temperatures of over 2000°C. Ultrahigh temperature ceramics like ZrB2 and HfB2 have melting temperatures of 3245°C and 3380°C respectively. However, these materials need to be protected from oxidation, usually with an oxide layer. Zirconium is more affordable and will be used to study its reaction with B4C and ZrSi2.

Experimentation was conducted by melting Zr slugs into a B4C and ZrSi2 packed bed at 1860°C …

Preparation And Characterization Of Silicon From Rice Hulls, E Swatsitang, M Krochai

Journal of Metals, Materials and Minerals

High purity silica can be prepared by reflux raw rice hulls in 1 N HCl for 45 minutes first, then pyrolyzed at 650°C for 3 hours in O2 atmosphere. The obtained white ash was examined by XRD showing a broad peak of amorphous silica at 2 theta = 22 degree. Silicon can be prepared by metallothermal reduction of pure silica at 650°C in Ar atmosphere for 1-3 hours, using magnesium (99% purity) as a reducing agent. High purity silicon (99.98 %) can be obtained by subsequently washing the as-reduced silica with HCl: H2O and HF: H2O solutions. The results from …

Silicon Nanowires As Anode Materials For Lithium Ion Batteries, Yan-Peng Fu, Hui-Xin Chen, Yong Yang

Journal of Electrochemistry

The SiNWs electrodes were fabricated by coating and direct growth methods,respectively.The structure,morphology and electrochemical performance of such materials were characterized by XRD,SEM and charge-discharge tests.The results show that the electrodes prepared by direct growth method had higher capacity,better battery life and also displayed and excellent cyclability at higher currents.During the process of lithiation,the initial crystalline Si transformed to amorphous LixSi,and the average diameter of the SiNWs increased.Despite the large volume changed,the SiNWs remained intact and did not break into smaller particles.

Low-Temperature Growth Of Inn On Si(100) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

InN films were grown on Si(100) using femtosecond pulsed laser deposition. Laser induced breakdown of ammonia was used to generate atomic nitrogen for InN growth. An indium buffer layer was initially deposited on the Si substrate at low temperature followed by an InN intermediate layer. The crystal quality and surface morphology were investigated by reflection high-energy electron diffraction during growth and atomic force microscopy and x-ray diffraction after growth. The results showed that the In (2×1) initial buffer layer improved the quality of the InN film. High quality InN films were grown at a temperature of ∼350 °C.

Design, Fabrication, Modeling And Characterization Of Electrostatically-Actuated Silicon Membranes, Brian C. Stahl

Master's Theses

This thesis covers the design, fabrication, modeling and characterization of electrostatically actuated silicon membranes, with applications to microelectromechanical systems (MEMS). A microfabrication process was designed to realize thin membranes etched into a silicon wafer using a wet anisotropic etching process. These flexible membranes were bonded to a rigid counterelectrode using a photo-patterned gap layer. The membranes were actuated electrostatically by applying a voltage bias across the electrode gap formed by the membrane and the counterelectrode, causing the membrane to deflect towards the counterelectrode. This deflection was characterized for a range of actuating voltages and these results were compared to the …

Modeling Edge Effects Of Mesa Diodes For Silicon Photovoltaics, Jesse S. Appel

Dissertations

A mesa diode has been modeled and its performance under dark and illuminated conditions has been simulated using a commercial finite element software package. These simulations have led to a determination of the self-consistent solution to the continuity equations for electrons and holes using the steady-state drift-diffusion model for carrier dynamics coupled with electric potential determined from Poisson's equation. The purpose of these simulations has been to determine the influence of edge conditions on the overall performance of mesa diodes under dark and illuminated conditions.

Mesa diode arrays are fabricated on crystalline silicon solar cells. They are an array of …

Reflection High-Energy Electron Diffraction Studies Of Indium Phosphide (100) And Growth On Indium And Indium Nitride On Silicon (100), Mohamed Abd-Elsattar Hafez

Electrical & Computer Engineering Theses & Dissertations

Study of the effects of atomic hydrogen exposure on structure and morphology of semiconductor surfaces is important for fundamental properties and applications. In this dissertation, the electron yield of a hydrogen-cleaned indium phosphide (InP) surface was measured and correlated to the development of the surface morphology, which was monitored by in situ reflection high-energy electron diffraction (RHEED). Atomic hydrogen treatment produced a clean, well-ordered, and (2x4)-reconstructed InP(100) surface. The quantum efficiency, after activation to negative electron affinity, and the secondary electron emission were shown to increase with hydrogen cleaning time. RHEED patterns of low-index InP(100) surface were modified by the …

Effect Of Silicon Content On The Corrosion Resistance And Radiation-Induced Embrittlement Of Materials For Advanced Heavy Liquid Metal Nuclear Systems, Ajit K. Roy

Transmutation Sciences Materials (TRP)

The beneficial effects of Si on both the metallurgical and corrosion properties of Cr-Mo steels have previously been demonstrated at UNLV. Therefore, additions of Si ranging from 0.5-2.0 weight percent (wt%) was attempted in this investigation to explore Si effect on both the high temperature tensile properties and corrosion behavior of T91 grade steel. Corrosion studies in the presence of molten LBE could not be performed due to a lack of proper experimental facilities at UNLV. Therefore, detailed corrosion studies involving Si-containing T91 grade steels were performed in an aggressive aqueous solution of acidic pH. Further, significant efforts have been …

Simulation Of Plasticity In Nanocrystalline Silicon, M. J. Demkowicz, A. S. Argon, D. Farkas, Megan Frary

Materials Science and Engineering Faculty Publications and Presentations

Molecular dynamics investigation of plasticity in a model nanocrystalline silicon system demonstrates that inelastic deformation localizes in intergranular regions. The carriers of plasticity in these regions are atomic environments that can be described as high-density liquid-like amorphous silicon. During fully developed flow, plasticity is confined to system-spanning intergranular zones of easy flow. As an active flow zone rotates out of the plane of maximum resolved shear stress during deformation to large strain, new zones of easy flow are formed. Compatibility of the microstructure is accommodated by processes such as grain rotation and formation of new grains. Nano-scale voids or cracks …

Band Gap Engineering Of Two Dimensional Silicon Photonic Crystals By Oxidation And Oxide Etching, Makhin Thitsa

Electrical & Computer Engineering Theses & Dissertations

In this thesis a thorough analysis is presented on the effects of oxidation and oxide etching on the band structure of two dimensional silicon photonic crystals (2 D Si PC's). By using the plane wave expansion method (PWM), two structures of triangular lattice, namely, air cylinders embedded in a silicon background and silicon cylinders embedded in an air background are modeled. The thesis focuses on triangular lattice arrangement because for certain parameter values such a lattice can give rise to absolute band gap, which prohibits the propagation of either transverse electric (TE) or transverse magnetic (TM) polarizations.

During oxidation three …

Redistribution Of Manganese Ion Implanted In Silicon, Arun Kumar Shunmugavelu

Electronic Theses and Dissertations

Ion implantation and the subsequent redistribution of manganese atoms in Czochralski Silicon (Cz-Si) and Floating Zone Silicon (Fz-Si) due to thermal annealing between 300 C and 1000 C is studied using Secondary Ion Mass Spectroscopy. The samples ion implanted at 340 C showed multiple peak formation above 900 C. This was not observed for the samples ion implanted at room temperature. Cz-Si and Fz-Si showed similar redistribution profiles.

Effect Of Silicon Content On The Corrosion Resistance And Radiation- Induced Embrittlement Of Materials For Advanced Heavy Liquid Metal Nuclear Systems, Ajit K. Roy

Transmutation Sciences Materials (TRP)

This task is focused on the evaluation of the effects of silicon content on both the corrosion behavior and radiation-induced embrittlement of martensitic stainless steels having compositions similar to that of modified 9Cr-1Mo steel, also known as T91 grade steel. T91 grade steel was selected to be a candidate structural material to contain molten lead-bismuth eutectic (LBE), which can act both as a target material and a coolant during the spallation process. The operating temperature during this process may range from 420-550 °C. Thus, moderate tensile strength of the containment material (T91) is a major requirement.

The beneficial effects of …

Effect Of Silicon Content On The Corrosion Resistance And Radiation-Induced Embrittlement Of Materials For Advanced Heavy Liquid Metal Nuclear Systems: Quarterly Progress Report (November 2005 – January 2006), Ajit K. Roy

Transmutation Sciences Materials (TRP)

This task is intended to study the effect of Si content not only on the corrosion resistance but also on the radiation-induced embrittlement of martensitic stainless steels. The susceptibility of these alloys with different Si content to stress corrosion cracking, general corrosion and localized corrosion will be evaluated in the molten LBE and aqueous environments of different pH values using state-of-the-art testing techniques. Testing in the aqueous media is intended to develop baseline data for comparison purpose. Radiation-induced embrittlement of these alloys will initially be studied by irradiating the test specimens with bremmstrahlung gamma radiation from 20-40 MeV electron beams …

Effect Of Silicon Content On The Corrosion Resistance And Radiation- Induced Embrittlement Of Materials For Advanced Heavy Liquid Metal Nuclear Systems, Ajit K. Roy

Transmutation Sciences Materials (TRP)

This task is primarily focused on the evaluation of the effect of Si content on the susceptibility of modified 9Cr-1Mo-0.24V steel to stress corrosion cracking (SCC) and localized cracking in both molten lead-bismuth eutectic (LBE) and an aqueous solution of acidic pH.

Further, significant efforts are in progress to characterize the deformation mechanism of modified T91 grade steel as a function of temperature and strain rate. Simultaneously, surface analyses of the tested materials are ongoing using state-of-the-art techniques including scanning electron microscopy (SEM) and transmission electron microscopy (TEM).

Effect Of Silicon Content On The Corrosion Resistance And Radiation-Induced Embrittlement Of Materials For Advanced Heavy Liquid Metal Nuclear Systems: Quarterly Progress Report (February – April 2005), Ajit K. Roy

Transmutation Sciences Materials (TRP)

This proposal is intended to study the effect of Si content not only on the corrosion resistance but also on the radiation-induced embrittlement of martensitic stainless steels. The susceptibility of these alloys with different Si content to stress corrosion cracking, general corrosion and localized corrosion will be evaluated in the molten LBE and aqueous environments of different pH values using state-of-the-art testing techniques. Testing in the aqueous media is intended to develop baseline data for comparison purpose. Radiation-induced embrittlement of these alloys will initially be studied by irradiating the test specimens with bremmstrahlung gamma radiation from 20-40 MeV electron beams …

Effect Of Silicon Content On The Corrosion Resistance And Radiation-Induced Embrittlement Of Materials For Advanced Heavy Liquid Metal Nuclear Systems: Quarterly Progress Report (November 2004 – January 2005), Ajit K. Roy

Transmutation Sciences Materials (TRP)

This proposal is intended to study the effect of Si content not only on the corrosion resistance but also on the radiation-induced embrittlement of martensitic stainless steels. The susceptibility of these alloys with different Si content to stress corrosion cracking, general corrosion and localized corrosion will be evaluated in the molten LBE and aqueous environments of different pH values using state-of-the-art testing techniques. Testing in the aqueous media is intended to develop baseline data for comparison purpose. Radiation-induced embrittlement of these alloys will initially be studied by irradiating the test specimens with bremmstrahlung gamma radiation from 20-40 MeV electron beams …

Effect Of Silicon Content On The Corrosion Resistance And Radiation-Induced Embrittlement Of Materials For Advanced Heavy Liquid Metal Nuclear Systems: Quarterly Progress Report (August 2004 – October 2004), Ajit K. Roy

Transmutation Sciences Materials (TRP)

The purpose of this collaborative research project involving the University of Nevada Las Vegas (UNLV), Los Alamos National Laboratory (LANL) and Idaho State University (ISU) is to evaluate the effect of silicon (Si) content on the corrosion behavior and radiation-induced embrittlement of martensitic stainless steels having chemical compositions similar to that of the modified 9Cr-1Mo steel. Recent studies at LANL involving Alloy EP-823 of different Si content have demonstrated that increased Si content in this alloy may enhance the corrosion resistance in molten lead-bismutheutectic (LBE). Since very little data exists in the open literature on the beneficial effect of Si …

Effect Of Silicon Content On The Corrosion Resistance And Radiation- Induced Embrittlement Of Materials For Advanced Heavy Liquid Metal Nuclear Systems, Ajit K. Roy

Transmutation Sciences Materials (TRP)

This task is focused on the evaluation of the effect of Si content on the corrosion behavior and radiation-induced embrittlement of martensitic steels having chemical compositions similar to that of modified 9Cr-1Mo steel. Numerous state-of-the-art experimental techniques are currently being planned to be employed to achieve the desired research goal.

Effect Of Silicon Content On The Corrosion Resistance And Radiation-Induced Embrittlement Of Materials For Advanced Heavy Liquid Metal Nuclear Systems, Ajit K. Roy

Transmutation Sciences Materials (TRP)

The purpose of this collaborative research project involving the University of Nevada Las Vegas (UNLV), Los Alamos National Laboratory (LANL) and Idaho State University (ISU) is to evaluate the effect of silicon (Si) content on the corrosion behavior and radiation-induced embrittlement of martensitic stainless steels having chemical compositions similar to that of the modified 9Cr-1Mo 2 steel. Recent studies at LANL involving Alloy EP-823 of different Si content have demonstrated that increased Si content in this alloy may enhance the corrosion resistance in molten lead-bismuth-eutectic (LBE). Since very little data exists in the open literature on the beneficial effect of …

Compensation And Characterization Of Gallium Arsenide, Randy A. Roush

Electrical & Computer Engineering Theses & Dissertations

The properties of transition metals in gallium arsenide have been previously investigated extensively with respect to activation energies, but little effort has been made to correlate processing parameters with electronic characteristics. Diffusion of copper in gallium arsenide is of technological importance due to the development of GaAs:Cu bistable photoconductive devices. Several techniques are demonstrated in this work to develop and characterize compensated gallium arsenide wafers. The material is created by the thermal diffusion of copper into silicon-doped GaAs. Transition metals generally form deep and shallow acceptors in GaAs, and therefore compensation is possible by material processing such that the shallow …

Laser Ablation Of Silicon Surfaces : The Effects Of A Low Level Background Light, Taposh Kumar Gayen

Theses

The performance of high speed optoelectronic and microelectronic devices largely depends on the uniqueness and development of the fabrication technology. Laser ablation has proven to be an effective three dimensional surface patterning technology. In this thesis, we present findings on the patterning of semiconductor surfaces using laser ablation in air as well as in solutions.

In this thesis, we suggest that the depth of a pattern induced on silicon by firing a pulsed excimer laser in air varies almost linearly with the number of pulses. We report that a He-Ne laser as a background light source has virtually little or …

The Effect Of Oxide Layers And Boron Doping On The Breakdown Of High Purity Silicon, Brian A. Hibbeln

Theses and Dissertations

For many applications such as lasers and radar drive circuits, there exists a need for solid state high voltage, high current switches. Current gaseous discharge switches fail to satisfy the ruggedness, reliability, and lifetime requirements of today's systems. A promising alternative is the Photoconductive Semiconductor Switch (PCSS). The limiting factor in the operation of these switches is the occurrence of breakdown through channels formed slightly below the surface. A theory on the formation of these channels is presented based upon band bending at the metal-semiconductor interface, a nonhomogeneous space charge due to irregular trap distributions, and thermal runaway in localized …

Influence Of Copper Doping On The Performance Of Optically Controlled Gaas Switches, St. T. Ko, V. K. Lakdawala, K. H. Schoenbach, M. S. Mazzola

Electrical & Computer Engineering Faculty Publications

The influence of the copper concentration in silicon-doped gallium arsenide on the photoionization and photoquenching of charge carriers was studied both experimentally and theoretically. The studies indicate that the compensation ratio (N_Cu/N_Si) is an important parameter for the GaAs:Si:Cu switch systems with regard to the turn-on and turn-off performance. The optimum copper concentration for the use of GaAs:Si:Cu as an optically controlled closing and opening switch is determined.

Nanosecond Optical Quenching Of Photoconductivity In A Bulk Gaas Switch, M. S. Mazzola, K. H. Schoenbach, V. K. Lakdawala, S. T. Ko

Electrical & Computer Engineering Faculty Publications

Persistent photoconductivity in copper-compensated, silicon-doped semi-insulating gallium arsenide with a time constant as large as 30 µs has been excited by sub-band-gap laser radiation of photon energy greater than 1 eV. This photoconductivity has been quenched on a nanosecond time scale by laser radiation of photon energy less than 1 eV. The proven ability to turn the switch conductance on and off on command, and to scale the switch to high power could make this semiconductor material the basis of an optically controlled pulsed-power closing and opening switch.

Seeded Oscillatory Growth Of Si Over Sio² By Cw Laser Irradiation, G.K. Celler, L. E. Trimble, K.K. Ng, H.J. Leamy, H. Baumgart

Electrical & Computer Engineering Faculty Publications

Extensive seeded epitaxial growth of crystalline Si over SiO₂ was achieved by an oscillatory regrowth method applied to rectangular Si pads recessed into a thick SiO₂ film. Narrow (≃5 μm) via holes linked the pads with the bulk (100) Si substrate. Oriented single crystals propagated as far as 500 μm from the seeding area, following the long term advance of a scanned focused laser beam.