Materials Science and Engineering Commons^™

Influence Of Gas Atmosphere And Deposition Time On Si/Mno₂ Thin Films Properties Deposited By Magnetron Sputtering For Supercapacitor Application, Tansya Trisnatika Dewi, Boon Tong Goh, Reza Akbar Pahlevi, Ishmah Luthfiyah, Markus Diantoro

Journal of Mechanical Engineering Science and Technology (JMEST)

Thin films of MnO₂ were successfully deposited onto Si substrates using the magnetron sputtering technique in various gas atmospheres and deposition times to study their influence on the structural, morphological, electrical, and electrochemical properties for application as supercapacitor electrodes. Structural analysis using XRD showed that deposition under an Ar+O₂ gas atmosphere increased the crystallite size and crystallinity of the Si/MnO₂ films, while shorter deposition times reduced the crystallite size and lowered the crystallinity. Surface morphology observation using SEM showed that the film deposited in an Ar+O₂ gas atmosphere had smaller, more uniform, evenly distributed, and closely …

Ohmic Contacts For Fabrication Of Sic Cmos Devices, Anthony Di Mauro

Graduate Theses and Dissertations

Today’s world of electronics is dominated by semiconductor devices which utilize silicon as their substrate material. Though, silicon is not ideal for semiconductor devices in high-voltage or high-temperature applications. Additionally, the efficiency of silicon devices becomes drastically reduced in nonideal operating conditions. Therefore, finding alternatives to silicon?based devices has been a topic for decades now. A few great candidates to replace silicon devices for said applications include Silicon Carbide (SiC), Gallium Nitride (GaN), and Aluminum Arsenide (AlAs). SiC has grown its reputation as the best candidate, when compared to other potential alternatives, due to its wide bandgap, high operating frequency, …

Nanostructured Silicon Meta-Waveguides And Surfaces For Enhanced Light-Matter Interaction, Saddam Gafsi

All Dissertations

In this study, we tackle the challenge of light-matter interaction engineering and local field enhancement using various silicon photonic platforms based on three different approaches. (i) The first approach is based on boundary condition engineering where we present and show through simulation and experimental results, a silicon nanodisk “diabolo” configuration able to support significant local field enhancement levels in the range ~102 to 104 in the high index medium through proper structural modifications at the nanoscale. We show that the presented optical behavior is consistent with the anapole modes characterized by the observed near-field enhancement and coinciding with far-field suppression. …

Sub-1k Cold Electron Transport At Room Temperature, Anthony Martinez

Material Science and Engineering Dissertations - Archive

Thermally excited electrons at the high-energy tail of the Fermi-Dirac distribution impose fundamental limitations on the performance of solid-state electronic and spintronic devices. For example, the thermally excited electrons obscure the Coulomb blockade essential for single-electron transport. The hot electrons can also overcome the energy barrier of Metal-Oxide-Semiconductor Field-Effect transistors (MOSFETs), causing unwanted leakage currents that lead to excessive power consumption in the integrated circuits. This study investigates an approach in which quantum states are used to manipulate electron tunneling, blocking the transport of thermally excited hot electrons, thereby enabling cold-electron transport at room temperature. Here two heterogeneous quantum wells …

Spectroscopic Studies On Silicon And Chalcopyrite Materials For Solar Energy Applications, Amandee Hua

UNLV Theses, Dissertations, Professional Papers, and Capstones

In this dissertation, silicon-based materials for photovoltaics and chalcopyrite-based materials for photoelectrochemical water splitting are investigated using various spectroscopic and microscopic techniques. Although silicon dominates the photovoltaic market, further improvement can be made by using an alternative low temperature passivation approach. Currently, thermally grown SiO2 passivation is commonly used for silicon solar cells. However, this technique requires high processing temperatures (>800 °C), which increases the thermal budget, potentially decreases the bulk quality of Si, and can lead to difficulties in implementing in production lines. Here, a S-based passivation approach is studied that require lower processing temperatures of ~550 °C. …

Photon Attenuation Layer Silicon-Based X-Ray Detector: Quantum Efficiency Investigation And Algorithmic Processing Of Individual Detection Events, Kevin Larkin

ENGS 88 Honors Thesis (AB Students)

State-of-the-art X-ray detectors either use silicon direct detection—which is inefficient, as silicon is mostly transparent to high-energy X-rays—or rely on expensive scintillators to first down-convert X-ray photons to lower energies. Dr. Eldred Lee of Dartmouth College recently completed doctoral research that suggested the promise of a novel alternative: silicon-based X-ray detectors that utilize photon attenuation layers rather than scintillators. While Dr. Lee’s work is certainly rigorous and meritorious, background noise controls were rendered less effective by circumstances. The work presented in this thesis succeeded in implementing much better background noise controls for a series of new tests to compare the …

Mechanical Strength Of Germanium Doped Low Oxygen Concentration Czochralski Silicon And The Effect Of Oxygen On Nitrogen Dissociation In Silicon, Junnan Wu

McKelvey School of Engineering Graduate Student Theses & Dissertations

During the Czochralski growth of silicon, it is inevitable for oxygen to be incorporated into the silicon crystal from the quartz crucible. Interstitial oxygen improves the mechanical strength of silicon by pinning and locking dislocations, but also generates thermal donors during device processes, shifting the electrical resistivity. For silicon wafers used in radio frequency (RF) applications, it is important to ensure the high resistivity of the substrates for good RF characteristics. Therefore, the oxygen level in these high resistivity silicon wafers is kept very low (< 2.5 × 1017 atoms/cm3) by carefully controlling the Czochralski growth conditions, in order to reduce the thermal donor concentration to an acceptable level. Silicon on insulator (SOI) substrates made from high resistivity wafers have been widely used for RF applications. SOI manufacturing includes multiple high temperature thermal cycles (1000 – 1100 °C), during which the high resistivity wafers are prone to slip and warpage. Therefore, it is technologically important to recover some of the lost mechanical strength due to the lack of oxygen by introducing electrically inactive impurities to suppress the dislocation generation and mobility in silicon. Germanium (Ge) as an isovalent impurity is 4% larger in size and forms a solid solution with silicon in the entire concentration range. Previous works have shown Ge doping at high concentrations above 6 × 1019 atoms/cm3 increased mechanical strength of silicon with high oxygen concentration (~ 1 × 1018 atoms/cm3). In this work, we explore the effect of Ge doping (7 - 9 × 1019 atoms/cm3) on the mechanical strength of low oxygen concentration (< 2 × 1017 atoms/cm3) silicon, where the oxygen associated dislocation locking and pinning are very low. A mechanical bending test was used to study the average dislocation migration velocity and the critical shear stress of dislocations motion at 600 – 750 °C for Ge doped, nitrogen doped, and undoped low oxygen samples, as well as nitrogen doped float-zone and un-doped high oxygen concentration samples. Next, we fabricated SOI substrates using these high resistivity wafers and compared their slip generation rates and the slip-free epitaxial grow temperature windows after the high temperature thermal cycles (> 1000 °C). Our results indicate at lower temperature Ge doesn’t affect the dislocation mobility …

Conductivity Reversal In Silicon Doped With S And Zn, Abdulaziz Shavkatovich Mavlyanov, Nurullo Zikrillayev, Maruf Khaqqulov, Erkin Khaltursunov, Farhod Shakarov

Acta of Turin Polytechnic University in Tashkent

Based on experimental results of investigation of type of conductivity of silicon samples doped with sulfur at Т=1250°С, and thereafter with zinc at T=1200°С, the authors put forward the hypothesis about self-assembly of “binary” elementary cells where atoms of elements of group II (Zn) and IV (S) allegedly form ZnS-type compounds in Si. The thermodynamic conditions required for buildup of such elementary cells and assembly of various associations in the basic lattice of silicon including self-assembly of ZnS clusters were theoretically determined and experimentally justified.

Understanding And Mitigating The Electrochemical-Mechanical Degradation Of High Capacity Battery Electrodes, Dingying Dang

Theses and Dissertations--Chemical and Materials Engineering

Lithium-ion batteries (LIBs) with high energy density and cycling stability play a critical role in developing electric vehicle (EV) and grid energy storage techniques. The electrochemical performance of LIBs can be improved by using high capacity positive (e.g., LiNi_1/3Mn_1/3Co_1/3O₂, i.e., NMC111) and negative (e.g., silicon) electrodes; both, however, experience severe electrochemical-mechanical degradation caused by the lithiation/delithiation induced volume changes. Understanding mechanical degradation mechanisms and their relationships with the capacity fading of electrodes is important for improving the cycling stability of electrodes as well as optimizing the design of electrodes with high capacity …

Investigation Of Optical Second Harmonic Generation From Si (100) With Process Tailored Surface & Embedded Ag Nanostructures For Advanced Si Nonlinear Nanophotonics, Gourav Bhowmik

Legacy Theses & Dissertations (2009 - 2024)

The challenge of current microelectronic architecture in transmission bandwidth and power consumption can be potentially solved by using silicon photonics technologies that are compatible with modern CMOS fabrication. One of the critical active photonic devices for Si photonics is a Si based optical modulator. Most of the reported silicon modulators rely on the free carrier plasma dispersion effect. In those cases, a weak change of the refractive index obtained by carrier accumulation, injection or depletion is utilized in a Mach-Zehnder interferometer or a microring resonator to achieve intensity modulation, rendering them difficult for chip-level implementation due to a large footprint …

Application Of Cross-Linked Polyborosiloxanes And Organically Modified Boron Silicate Binders In Silicon-Containing Anodes For Lithium-Ion Batteries, Darius A. Shariaty, Dali Qian, Yang-Tse Cheng, Susan A. Odom

Chemistry Faculty Publications

To determine the effect of cross-linking in polymer binders on gravimetric capacity and retention in charge/discharge cycling of lithium-ion batteries containing silicon anodes, polymers with a varied chemiophysical characters have been studied as electrode binders. Here we report the utilization of cross-linked polyborosiloxanes and a boron-modified organosilicate as binders for nanoparticulate silicon-containing anodes for lithium-ion batteries. We show that highly cross-linked binders enable a large degree of capacity to be accessed and that capacity retention is greater when the electrodes are cycled in half cells. More extensive analysis of the boron-modified organosilicate is further explored.

Photoluminescence From Gan Co-Doped With C And Si, Mykhailo Vorobiov

Theses and Dissertations

This thesis devoted to the experimental studies of yellow and blue luminescence (YL and BL relatively) bands in Gallium Nitride samples doped with C and Si. The band BL_C was at first observed in the steady-state photoluminescence spectrum under high excitation intensities and discerned from BL1 and BL2 bands appearing in the same region of the spectrum. Using the time-resolved photoluminescence spectrum, we were able to determine the shape of the BL_C and its position at 2.87 eV. Internal quantum efficiency of the YL band was estimated to be 90\%. The hole capture coefficient of the BL_{C …}

The Physical Behavior And Characterization Of Nanoporous Silicon And Dispenser Cathode Surfaces, Tyler Lucius Corey Maxwell

Theses and Dissertations--Chemical and Materials Engineering

Nanostructured materials have received a surge of interest in recent years since it has become apparent that reducing the size of a material often leads to heightened mechanical behavior. From a fundamental standpoint, this stems from the confinement of dislocations. Applications in microelectromechanical devices, lithium ion batteries, gas sensing and catalysis are realized by combining the improvements in mechanical behavior from material size reduction with the heightened chemical activity offered by materials with a high surface-area-to-volume ratio. In this study, films of nanoporous Si-Mg were produced through magnetron sputtering, followed by dealloying using an environmentally benign process with distilled water. …

Quality Improvement In Drilling Silicon By Using Micro Laser Assisted Drilling, Barkin Bakir

The Hilltop Review

The micro-laser assisted drilling (µ-LAD) of monocrystalline silicon (100), using a diamond cutting tool coupled with a laser, was tested in order to improve the cutting edge quality of a drilled samples. The laser beam is transmitted through an optically transparent diamond drill bit and focused precisely at the tool-workpiece interface, where the material is under high pressure induced by the diamond tool. The influence of the laser power on the quality and the inner surface finish of the drilled materials is investigated. Different laser powers were used to carry out the experiments. The experimental results indicated that the µ-LAD …

Experimental And Theoretical Evaluation Of In-Depth Damage Distribution In Sawn Silicon Wafers, Srinivasamurthy Devayajanam

Dissertations

As-sawn silicon wafers have surface damage that needs to be removed before any further processing into solar cells. This damage distribution can vary with cutting parameters such as wire size, slurry particle/diamond grit size, and wire usage. To date, there is no simple way to measure the degree of damage, damage depth, and damage distribution. But, this information is needed by the wafer manufacturers as well as solar cell manufacturers.

A technique based on sequential etching of silicon wafers and minority carrier lifetime (τ_eff) measurements is used to determine damage depth. In this technique, samples are sequentially etched …

Tailoring The Optical Properties Of Silicon With Ion Beam Created Nanostructures For Advanced Photonics Applications, Perveen Akhter

Legacy Theses & Dissertations (2009 - 2024)

In today’s fast life, energy consumption has increased more than ever and with that the demand for a renewable and cleaner energy source as a substitute for the fossil fuels has also increased. Solar radiations are the ultimate source of energy but harvesting this energy in a cost effective way is a challenging task. Si is the dominating material for microelectronics and photovoltaics. But owing to its indirect band gap, Si is an inefficient light absorber, thus requiring a thickness of solar cells beyond tens of microns which increases the cost of solar energy. Therefore, techniques to increase light absorption …

Lnvestigation Of The Critical Role Of Polymeric Binders For Silicon Negative Electrodes In Lithium-Lon Batteries, Jiagang Xu

Theses and Dissertations--Chemical and Materials Engineering

Silicon is capable of delivering a high theoretical specific capacity of 3579 mAh g^-1, which is about 10 times higher than that of the state-of-the-art graphite-based negative electrodes for lithium-ion batteries (LIBs). However, the poor cycle life of silicon electrodes, caused by the large volumetric strain during cycling, limits the commercialization of silicon electrodes. As one of the essential components, the polymeric binder is critical to the performance and durability of lithium-ion batteries as it keeps the integrity of electrodes, maintains conductive path and must be stable in the electrolyte. The guideline for binder selection of silicon electrodes …

High Capacity Silicon Electrodes With Nafion As Binders For Lithium-Ion Batteries, Jiagang Xu, Qinglin Zhang, Yang-Tse Cheng

Chemical and Materials Engineering Faculty Publications

Silicon is capable of delivering a high theoretical specific capacity of 3579 mAh g⁻¹ which is about 10 times higher than that of the state-of-the-art graphite based negative electrodes for lithium-ion batteries. However, the poor cycle life of silicon electrodes, caused by the large volumetric strain during cycling, limits the commercialization of silicon electrodes. As one of the essential components, the polymeric binder is critical to the performance and durability of lithium-ion batteries as it keeps the integrity of electrodes, maintains conductive path and must be stable in the electrolyte. In this work, we demonstrate that electrodes consisting of …

Interstitial Silicon Ions In Rutile Tio2 Crystals, Eric M. Golden, Nancy C. Giles, Shan Yang, Larry E. Halliburton

Faculty Publications

Electron paramagnetic resonance (EPR) is used to identify a new and unique photoactive silicon-related point defect in single crystals of rutile TiO₂. The importance of this defect lies in its assignment to interstitial silicon ions and the unexpected establishment of silicon impurities as a major hole trap in TiO₂. Principal g values of this new S=1/2 center are 1.9159, 1.9377, and 1.9668 with principal axes along the [¯110],[001], and [110] directions, respectively. Hyperfine structure in the EPR spectrum shows the unpaired spin interacting equally with two Ti nuclei and unequally with two Si nuclei. These silicon …

Study Of Millisecond Laser Annealing On Ion Implanted Soi And Application To Scaled Finfet Technology, Tyler J. Michalak

Legacy Theses & Dissertations (2009 - 2024)

The fabrication of metal-oxide-semiconductor field effect transistors (MOSFET) requires the engineering of low resistance, low leakage, and extremely precise p-n junctions. The introduction of finFET technology has introduced new challenges for traditional ion implantation and annealing techniques in junction design as the fin widths continue to decrease for improved short channel control. This work investigates the use of millisecond scanning laser annealing in the formation of n-type source/drain junctions in next generation MOSFET.

Synthesis, Structure, Properties And Applications Of Nanoporous Silicon And Palladium, Xu Jiang

Theses and Dissertations--Chemical and Materials Engineering

Nanoporous (np) materials with pore size below 100 nano-meters exist naturally in biological and mineral structures, and synthetic np materials have been used industrially for centuries. Np materials have attracted significant research interest in recent decades, as the development of new characterization techniques and nanotechnology allow the observation and design of np materials at a new level. This study focuses on two np materials: nanoporous silicon (np-Si) and nanoporous palladium (np-Pd).

Silicon (Si), because of its high capacity to store lithium (Li), is increasingly becoming an attractive candidate as anode material for Li ion batteries (LIB). One significant problem with …

Observation Of Tunneling Effects In Lateral Nanowire Pn Junctions, Sri Purwiyanti, Arief Udhiarto, Daniel Moraru, Takeshi Mizuno, Djoko Hartanto, Michiharu Tabe

Makara Journal of Technology

As electronic device dimensions are continuously reduced, applied bias conditions significantly change and the transport mechanisms must be reconsidered. Tunneling devices are promising for scaled-down electronics because of expected high-speed operation and relatively low bias. In this work, we investigated the tunneling features in silicon-oninsulator lateral nanowire pn junction and pin junction devices. By controlling the substrate voltage, tunneling features can be observed in the electrical characteristics. We found that the minimum substrate voltage required for tunneling to occur in pn junctions is higher as compared with pin junctions. The main cause of these effects relies in the difference between …

Design And Fabrication Of Electrostatically Actuated Serpentine-Hinged Nickel-Phosphorous Micromirror Devices, Nicholas A. Wiswell

Master's Theses

A process for micromachining of micro-mirror devices from silicon-on-insulator wafers was proposed and implemented. Test methods and force applicators for these devices were developed. Following successful fabrication of these devices, a novel process for fabrication of devices out of the plane of the silicon wafer was proposed, so that the devices could be actuated electrostatically. In particular, the process makes use of thick photoresist layers as a sacrificial mold into which an amorphous nickel-phosphorous alloy may be deposited. Ideal design of the electrostatically actuated micro-mirrors was investigated, and a final design was selected and modeled using FEA software, which found …

Metal-Assisted Etching Of Silicon Molds For Electroforming, Ralu Divan, Dan Rosenthal '14, Karim Ogando, Leonidas E. Ocola, Daniel Rosenmann, Nicolaie Moldovan

Student Publications & Research

Ordered arrays of high-aspect-ratio micro/nanostructures in semiconductors stirred a huge scientific interest due to their unique one-dimensional physical morphology and the associated electrical, mechanical, chemical, optoelectronic, and thermal properties. Metal-assisted chemical etching enables fabrication of such high aspect ratio Si nanostructures with controlled diameter, shape, length, and packing density, but suffers from structure deformation and shape inconsistency due to uncontrolled migration of noble metal structures during etching. Hereby the authors prove that a Ti adhesion layer helps in stabilizing gold structures, preventing their migration on the wafer surface while not impeding the etching. Based on this finding, the authors demonstrate …

Fe, Co And Ni Adatoms Adsorbed On Silicene: A Dft Study, Kent Gang '14, Siva Gangavarapu '14, Matthew Deng '14, Glenn W. "Max" Mcgee, Ron Hurlbut, Michael Lee Dao Kang, Sean Ng Peng Nam, Harman Johll, Tok Eng Soon

Student Publications & Research

Two-dimensional materials have attracted much research attention given their intriguing properties. The latest member of this class of materials is silicene. In this work, we investigate the adsorption of Fe, Co and Ni adatoms on silicene using plane-wave density functional theory calculations within the Perdew-Burke-Ernzerhof parameterization of the generalized gradient approximation for the exchange-correlation potential. In particular, we calculate the binding energy, magnetization, and projected electronic configurations of these adatoms adsorbed at different sites on the silicene. Our calculations show that the hole site (i.e. in the centre of a hexagonal-like arrangement of Si atoms) is the most stable configuration …

Synthesis And Electrochemical Performance Of Si/C Composite Modified By Pani, Guang-Hui Zhang, Pei-Kang Shen, Ge Sang, Ren-Jin Xiong

Journal of Electrochemistry

Silicon/carbon (Si/C) composite materials were prepared through high-energy ball milling and high-temperature solid-phase method, and then coated with thin polyaniline (PAni) film by oxidation. The microstructure and component of the composites were characterized by SEM, XRD, IR, TG, and the electrochemical performance was investigated by cyclic voltammetry (CV) and galvanostatic charge-discharge tests. The results showed that the surface of PAni/Si/G/C composite was coating with complete lamellar structure of PAni film. Its reversible capacity was 784 mAh·g^-1 and 690 mAh·g^-1 could be maintained after 50th charge-discharge cycles.

Bond Strength Characterization Of Su-8 To Su-8 For Fabricating Microchannels Of An Electrokinetic Microfluidic Pump, Nash Anderson

Materials Engineering

Photosensitive negative resist polymer layers of SU-8 2050 were adhered to 100 mm n-type silicon and Pyrex wafers via spin coating. These wafers were then bonded together at various temperatures of 100 ͦC, 120 ͦC, 140 ͦC, 150 ͦC, 160 ͦC, and 180 ͦC. The target thickness of each SU-8 layer was 100 µm. Photolithography was used to create microfluidic channels within the SU-8. An n-type silicon wafer and a Pyrex wafer, each with an SU-8 layer, were brought together on the “hard bake” or final step of SU-8 polymerization. A pressure of ~300 KPa was applied during the hard …

Creating A Solar Cell Array From A Single Silicon Wafer, Samyukta Gade, Roderick Marstell

Materials Engineering

Two different processes to create multi-celled solar panels from single wafers were made and implemented. To do this, the cells must not have a common ground, and both designs use different approaches to solve this problem. One utilizes a 2.9 µm deep n-type well within a 10.74 µm deep p-type well in an n-type wafer. There are two cells in series, which has a theoretical voltage of 1 V. The cells are connected in series with 1.9 µm thick gold traces. Any area that the gold is not in contact with the silicon has a .5 µm layer silicon dioxide …

Grain Boundaries Structures And Wetting In Doped Silicon, Nickel And Copper, Kaveh Meshinchi Asl

All Dissertations

This thesis reports a series of fundamental investigations of grain boundary wetting, adsorption and structural (phases) transitions in doped Ni, Cu and Si with technological relevance to liquid metal embrittlement, liquid metal corrosion and device applications. First, intrinsically ductile metals are prone to catastrophic failure when exposed to certain liquid metals, but the atomic level mechanism for this effect is not fully understood. A nickel sample infused with bismuth atoms was characterized and a bilayer interfacial phase that is the underlying cause of embrittlement was observed. In a second related study, we showed that addition of minor impurities can significantly …

Modified Statistical Dynamical Diffraction Theory : A Novel Metrological Analysis Method For Partially Relaxed And Defective C Doped Si And Sige Heterostructures, Paul Kenneth Shreeman

Legacy Theses & Dissertations (2009 - 2024)

The statistical dynamical diffraction theory, which has been initially developed by late Kato remained in obscurity for many years due to intense and difficult mathematical treatment that proved to be quite challenging to implement and apply. With assistance of many authors in past (including Bushuev, Pavlov, Pungeov, and among the others), it became possible to implement this unique x-ray diffraction theory that combines the kinematical (ideally imperfect) and dynamical (the characteristically perfect diffraction) into a single system of equations controlled by two factors determined by long range order and correlation function within the structure. The first stage is completed by …