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Articles 61 - 90 of 129

Full-Text Articles in Materials Science and Engineering

Fusion Of Renewable Ring Resonator Lasers And Ultrafast Laser Inscribed Photonic Waveguides, Hengky Chandrahalim, Stephen C. Rand, Xudong Fan Sep 2016

Fusion Of Renewable Ring Resonator Lasers And Ultrafast Laser Inscribed Photonic Waveguides, Hengky Chandrahalim, Stephen C. Rand, Xudong Fan

Faculty Publications

We demonstrated the monolithic integration of reusable and wavelength reconfigurable ring resonator lasers and waveguides of arbitrary shapes to out-couple and guide laser emission on the same fused-silica chip. The ring resonator hosts were patterned by a single-mask standard lithography, whereas the waveguides were inscribed in the proximity of the ring resonator by using 3-dimensional femtosecond laser inscription technology. Reusability of the integrated ring resonator – waveguide system was examined by depositing, removing, and re-depositing dye-doped SU-8 solid polymer, SU-8 liquid polymer, and liquid solvent (toluene). The wavelength reconfigurability was validated by employing Rhodamine 6G (R6G) and 3,3′-Diethyloxacarbocyanine iodide (CY3) …


Miss Lonesome: Old Boats Past Their Prime, Garth Woodruff Aug 2016

Miss Lonesome: Old Boats Past Their Prime, Garth Woodruff

Faculty Publications

No abstract provided.


Monolayer Mos2 Bandgap Modulation By Dielectric Environments And Tunable Bandgap Transistors, Junga Ryou, Yong-Sung Kim, Santosh Kc, Kyeongjae Cho Jul 2016

Monolayer Mos2 Bandgap Modulation By Dielectric Environments And Tunable Bandgap Transistors, Junga Ryou, Yong-Sung Kim, Santosh Kc, Kyeongjae Cho

Faculty Publications

Semiconductors with a moderate bandgap have enabled modern electronic device technology, and the current scaling trends down to nanometer scale have introduced two-dimensional (2D) semiconductors. The bandgap of a semiconductor has been an intrinsic property independent of the environments and determined fundamental semiconductor device characteristics. In contrast to bulk semiconductors, we demonstrate that an atomically thin two-dimensional semiconductor has a bandgap with strong dependence on dielectric environments. Specifically, monolayer MoS2 bandgap is shown to change from 2.8 eV to 1.9 eV by dielectric environment. Utilizing the bandgap modulation property, a tunable bandgap transistor, which can be in general made of …


Identification Of The Zinc-Oxygen Divacancy In Zno Crystals, Maurio S. Holston, Eric M. Golden, Brant E. Kananen, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton Apr 2016

Identification Of The Zinc-Oxygen Divacancy In Zno Crystals, Maurio S. Holston, Eric M. Golden, Brant E. Kananen, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton

Faculty Publications

An electron paramagnetic resonance (EPR) spectrum in neutron-irradiated ZnO crystals is assigned to the zinc-oxygen divacancy. These divacancies are observed in the bulk of both hydrothermally grown and seeded-chemical-vapor-transport-grown crystals after irradiations with fast neutrons. Neutral nonparamagnetic complexes consisting of adjacent zinc and oxygen vacancies are formed during the irradiation. Subsequent illumination below ∼150 K with 442 nm laser light converts these (V2−Zn − V2+O)0 defects to their EPR-active state (VZn − V2+O)+ as electrons are transferred to donors. The resulting photoinduced S = 1/2 spectrum of the …


Materials Design On The Origin Of Gap States In A High-Κ/Gaas Interface, Weichao Wang, Cheng Gong, Ka Xiong, Santosh Kc, Robert Wallace, Kyeongjae Cho Mar 2016

Materials Design On The Origin Of Gap States In A High-Κ/Gaas Interface, Weichao Wang, Cheng Gong, Ka Xiong, Santosh Kc, Robert Wallace, Kyeongjae Cho

Faculty Publications

Given the demand for constantly scaling microelectronic devices to ever smaller dimensions, a SiO2 gate dielectric was substituted with a higher dielectric-constant material, Hf(Zr)O2, in order to minimize current leakage through dielectric thin film. However, upon interfacing with high dielectric constant (high-κ) dielectrics, the electron mobility in the conventional Si channel degrades due to Coulomb scattering, surface-roughness scattering, remote-phonon scattering, and dielectric-charge trapping. III-V and Ge are two promising candidates with superior mobility over Si. Nevertheless, Hf(Zr)O2/III-V(Ge) has much more complicated interface bonding than Si-based interfaces. Successful fabrication of a high-quality device critically depends on understanding and engineering the bonding …


Creep Behavior In Interlaminar Shear Of A Hi-Nicalon™/Sic-B4c Composite At 1200°C In Air And In Steam, Marina B. Ruggles-Wrenn, Matthew T. Pope Nov 2015

Creep Behavior In Interlaminar Shear Of A Hi-Nicalon™/Sic-B4c Composite At 1200°C In Air And In Steam, Marina B. Ruggles-Wrenn, Matthew T. Pope

Faculty Publications

Creep behavior in interlaminar shear of a non-oxide ceramic composite with a multilayered matrix was investigated at 1200C in laboratory air and in steam environment. The composite was produced via chemical vapor infiltration (CVI). The composite had an oxidation inhibited matrix, which consisted of alternating layers of silicon carbide and boron carbide and was reinforced with laminated Hi-NicalonTM fibers woven in a five-harness-satin weave. Fiber preforms had pyrolytic carbon fiber coating with boron carbon overlay applied. The interlaminar shear properties were measured. The creep behavior was examined for interlaminar shear stresses in the 16–22 MPa range. Primary …


Improved Terahertz Modulation Using Germanium Telluride (Gete) Chalcogenide Thin Films, Alexander H. Gwin, Christopher H. Kodama, Tod V. Laurvick, Ronald Coutu Jr., Philip F. Taday Jul 2015

Improved Terahertz Modulation Using Germanium Telluride (Gete) Chalcogenide Thin Films, Alexander H. Gwin, Christopher H. Kodama, Tod V. Laurvick, Ronald Coutu Jr., Philip F. Taday

Faculty Publications

We demonstrate improved terahertz (THz) modulation using thermally crystallized germanium telluride (GeTe) thin films. GeTe is a chalcogenide material that exhibits a nonvolatile, amorphous to crystalline phase change at approximately 200 °C, as well as six orders of magnitude decreased electrical resistivity. In this study, amorphous GeTe thin films were sputtered on sapphire substrates and then tested using THz time-domain spectroscopy (THz-TDS). The test samples, heated in-situ while collecting THz-TDS measurements, exhibited a gradual absorbance increase, an abrupt nonvolatile reduction at the transition temperature, followed by another gradual increase in absorbance. The transition temperature was verified by conducting similar thermal …


Interstitial Silicon Ions In Rutile Tio2 Crystals, Eric M. Golden, Nancy C. Giles, Shan Yang, Larry E. Halliburton Apr 2015

Interstitial Silicon Ions In Rutile Tio2 Crystals, Eric M. Golden, Nancy C. Giles, Shan Yang, Larry E. Halliburton

Faculty Publications

Electron paramagnetic resonance (EPR) is used to identify a new and unique photoactive silicon-related point defect in single crystals of rutile TiO2. The importance of this defect lies in its assignment to interstitial silicon ions and the unexpected establishment of silicon impurities as a major hole trap in TiO2. Principal g values of this new S=1/2 center are 1.9159, 1.9377, and 1.9668 with principal axes along the [¯110],[001], and [110] directions, respectively. Hyperfine structure in the EPR spectrum shows the unpaired spin interacting equally with two Ti nuclei and unequally with two Si nuclei. These silicon …


Surface Oxidation Energetics And Kinetics On Mos2 Monolayer, Santosh Kc, Roberto Longo, Robert Wallace, Kyeongjae Cho Apr 2015

Surface Oxidation Energetics And Kinetics On Mos2 Monolayer, Santosh Kc, Roberto Longo, Robert Wallace, Kyeongjae Cho

Faculty Publications

In this work, surface oxidation of monolayer MoS2 (one of the representative semiconductors in transition-metal dichalcogenides) has been investigated using density functional theory method. Oxygen interaction with MoS2 shows that, thermodynamically, the surface tends to be oxidized. However, the dissociative absorption of molecular oxygen on the MoS2 surface is kinetically limited due to the large energy barrier at low temperature. This finding elucidates the air stability of MoS2 surface in the atmosphere. Furthermore, the presence of defects significantly alters the surface stability and adsorption mechanisms. The electronic properties of the oxidized surface have been examined as a function of oxygen …


Electrochemical Capture Of Co2 From Natural Gas Using A High-Temperature Ceramic-Carbonate Membrane, Jingjing Tong, Lingling Zhan, Jie Fang, Minfang Han, Kevin Huang Jan 2015

Electrochemical Capture Of Co2 From Natural Gas Using A High-Temperature Ceramic-Carbonate Membrane, Jingjing Tong, Lingling Zhan, Jie Fang, Minfang Han, Kevin Huang

Faculty Publications

This study reports the first investigation of using a ceramic-carbonate dual-phase membrane to electrochemically separate CO2 from a simulated natural gas. The CO2 permeation flux density was systematically studied as a function of temperature, CO2 partial pressure and time. As expected, the flux density was observed to increase with temperature and CO2 partial pressure. Long-term stability test showed that flux density experienced an initial performance-improving “break-in” period followed by a slow decay. Post-test microstructural analysis suggested that a gradual loss of carbonate during the test could be the cause of the flux-time behavior observed.


Theoretical Investigation Of Stabilities And Optical Properties Of Si12C12 Clusters, Xiaofeng F. Duan, Larry W. Burggraf Jan 2015

Theoretical Investigation Of Stabilities And Optical Properties Of Si12C12 Clusters, Xiaofeng F. Duan, Larry W. Burggraf

Faculty Publications

By sorting through hundreds of globally stable Si12C12 isomers using a potential surface search and using simulated annealing, we have identified low-energy structures. Unlike isomers knit together by Si–C bonds, the lowest energy isomers have segregated carbon and silicon regions that maximize stronger C–C bonding. Positing that charge separation between the carbon and silicon regions would produce interesting optical absorption in these cluster molecules, we used time-dependent density functional theory to compare the calculated optical properties of four isomers representing structural classes having different types of silicon and carbon segregation regions. Absorptions involving charge transfer between segregated …


Reconfigurable Solid-State Dye-Doped Polymer Ring Resonator Lasers, Hengky Chandrahalim, Xudong Fan Jan 2015

Reconfigurable Solid-State Dye-Doped Polymer Ring Resonator Lasers, Hengky Chandrahalim, Xudong Fan

Faculty Publications

This paper presents wavelength configurable on-chip solid-state ring lasers fabricated by a single-mask standard lithography. The single- and coupled-ring resonator hosts were fabricated on a fused-silica wafer and filled with 3,3′-Diethyloxacarbocyanine iodide (CY3), Rhodamine 6G (R6G) and 3,3′-Diethylthiadicarbocyanine iodide (CY5)-doped polymer as the reconfigurable gain media. The recorded lasing threshold was ~220 nJ/mm2 per pulse for the single-ring resonator laser with R6G, marking the lowest threshold shown by solid-state dye-doped polymer lasers fabricated with a standard lithography process on a chip. A single-mode lasing from a coupled-ring resonator system with the lasing threshold of ~360 nJ/mm2 per pulse …


Monolithic Optofluidic Ring Resonator Lasers Created By Femtosecond Laser Nanofabrication, Hengky Chandrahalim, Qiushu Chen, Ali A. Said, Mark Dugan, Xudong Fan Jan 2015

Monolithic Optofluidic Ring Resonator Lasers Created By Femtosecond Laser Nanofabrication, Hengky Chandrahalim, Qiushu Chen, Ali A. Said, Mark Dugan, Xudong Fan

Faculty Publications

We designed, fabricated, and characterized a monolithically integrated optofluidic ring resonator laser that is mechanically, thermally, and chemically robust. The entire device, including the ring resonator channel and sample delivery microfluidics, was created in a block of fused-silica glass using a 3-dimensional femtosecond laser writing process. The gain medium, composed of Rhodamine 6G (R6G) dissolved in quinoline, was flowed through the ring resonator. Lasing was achieved at a pump threshold of approximately 15 μJ/mm2. Detailed analysis shows that the Q-factor of the optofluidic ring resonator is 3.3 × 104, which is limited by both solvent …


Sulfur Vacancies In Photorefractive Sn2P2S6 Crystals, Eric M. Golden, Sergey A. Basun, A. A. Grabar, I. M. Stoika, Nancy C. Giles, D. R. Evans, Larry E. Halliburton Dec 2014

Sulfur Vacancies In Photorefractive Sn2P2S6 Crystals, Eric M. Golden, Sergey A. Basun, A. A. Grabar, I. M. Stoika, Nancy C. Giles, D. R. Evans, Larry E. Halliburton

Faculty Publications

A photoinduced electron paramagnetic resonance (EPR) spectrum in single crystals of Sn2P2S6 (SPS) is assigned to an electron trapped at a sulfur vacancy. These vacancies are unintentionally present in undoped SPS crystals and are expected to play an important role in the photorefractive behavior of the material. Nonparamagnetic sulfur vacancies are formed during the initial growth of the crystal. Subsequent illumination below 100 K with 442 nm laser light easily converts these vacancies to EPR-active defects. The resulting S = 1/2 spectrum shows well-resolved and nearly isotropic hyperfine interactions with two P ions and two Sn ions. Partially resolved interactions …


Biphilic Nanoporous Surfaces Enabled Exceptional Drag Reduction And Capillary Evaporation Enhancement, Xianming Dai, Fanghao Yang, Ronggui Yang, Xinyu Huang, William A. Rigdon, Xiaodong Li, Chen Li Nov 2014

Biphilic Nanoporous Surfaces Enabled Exceptional Drag Reduction And Capillary Evaporation Enhancement, Xianming Dai, Fanghao Yang, Ronggui Yang, Xinyu Huang, William A. Rigdon, Xiaodong Li, Chen Li

Faculty Publications

Simultaneously achieving drag reduction and capillary evaporation enhancement is highly desired but challenging because of the trade-off between two distinct hydrophobic and hydrophilic wettabilities. Here, we report a strategy to synthesize nanoscale biphilic surfaces to endow exceptional drag reduction through creating a unique slip boundary condition and fast capillary wetting by inducing nanoscopic hydrophilic areas. The biphilic nanoporous surfaces are synthesized by decorating hydrophilic functional groups on hydrophobic pristine multiwalled carbon nanotubes. We demonstrate that the carbon nanotube-enabled biphilic nanoporous surfaces lead to a 63.1% reduction of the friction coefficient, a 61.7% wetting speed improvement, and up to 158.6% enhancement …


Influence Of Crystal Structure On The Electrochemical Performance Of A-Site-Deficient Sr 1-Xnb 0.1 Co 0.9 O 3-Δ Perovskite Cathodes, Yinlong Zhu, Ye Lin, Xuan Shen, Jaka Sunarso, Wei Zhou, Shanshan Jiang, Dong Su, Fanglin Chen, Zongping Shao Aug 2014

Influence Of Crystal Structure On The Electrochemical Performance Of A-Site-Deficient Sr 1-Xnb 0.1 Co 0.9 O 3-Δ Perovskite Cathodes, Yinlong Zhu, Ye Lin, Xuan Shen, Jaka Sunarso, Wei Zhou, Shanshan Jiang, Dong Su, Fanglin Chen, Zongping Shao

Faculty Publications

The creation of A-site cation defects within a perovskite oxide can substantially alter the structure and properties of its stoichiometric analogue. In this work, we demonstrate that by vacating 2 and 5% of A-site cations from SrNb0.1Co0.9O3−δ (SNC1.00) perovskites (Sr1−sNb0.1Co0.9O3−δ, s = 0.02 and 0.05; denoted as SNC0.98 and SNC0.95, respectively), a Jahn–Teller (JT) distortion with varying extents takes place, leading to the formation of a modified crystal lattice within a the perovskite framework. Electrical conductivity, electrochemical performance, chemical compatibility and microstructure of Sr …


Copper Doping Of Zno Crystals By Transmutation Of 64Zn To 65Cu: An Electron Paramagnetic Resonance And Gamma Spectroscopy Study, Matthew C. Recker, John W. Mcclory, Maurio S. Holston, Eric M. Golden, Nancy C. Giles, Larry E. Halliburton Jun 2014

Copper Doping Of Zno Crystals By Transmutation Of 64Zn To 65Cu: An Electron Paramagnetic Resonance And Gamma Spectroscopy Study, Matthew C. Recker, John W. Mcclory, Maurio S. Holston, Eric M. Golden, Nancy C. Giles, Larry E. Halliburton

Faculty Publications

Transmutation of 64Zn to 65Cu has been observed in a ZnO crystal irradiated with neutrons. The crystal was characterized with electron paramagnetic resonance (EPR) before and after the irradiation and with gamma spectroscopy after the irradiation. Major features in the gamma spectrum of the neutron-irradiated crystal included the primary 1115.5 keV gamma ray from the 65Zn decay and the positron annihilation peak at 511 keV. Their presence confirmed the successful transmutation of 64Zn nuclei to 65Cu. Additional direct evidence for transmutation was obtained from the EPR of Cu2+ ions (where 63Cu and 65 …


Characterization Of 3d Interconnected Microstructural Network In Mixed Ionic And Electronic Conducting Ceramic Composites, William M. Harris, Kyle S. Brinkman, Ye Lin, Dong Su, Alex P. Cocco, Arata Nakajo, Matthew B. Degostin, Yu-Chen Karen Chen-Wiegart, Jun Wang, Fanglin Chen, Yong S. Chu, Wilson K. S. Chiu May 2014

Characterization Of 3d Interconnected Microstructural Network In Mixed Ionic And Electronic Conducting Ceramic Composites, William M. Harris, Kyle S. Brinkman, Ye Lin, Dong Su, Alex P. Cocco, Arata Nakajo, Matthew B. Degostin, Yu-Chen Karen Chen-Wiegart, Jun Wang, Fanglin Chen, Yong S. Chu, Wilson K. S. Chiu

Faculty Publications

The microstructure and connectivity of the ionic and electronic conductive phases in composite ceramic membranes are directly related to device performance. Transmission electron microscopy (TEM) including chemical mapping combined with X-ray nanotomography (XNT) have been used to characterize the composition and 3-D microstructure of a MIEC composite model system consisting of a Ce0.8Gd0.2O2 (GDC) oxygen ion conductive phase and a CoFe2O4 (CFO) electronic conductive phase. The microstructural data is discussed, including the composition and distribution of an emergent phase which takes the form of isolated and distinct regions. Performance implications are considered …


A Sinteractive Ni-Bazr0.8Y0.2O3-Δ Composite Membrane For Hydrogen Separation, Shumin Fang, Siwei Wang, Kyle S. Brinkman, Fanglin Chen Apr 2014

A Sinteractive Ni-Bazr0.8Y0.2O3-Δ Composite Membrane For Hydrogen Separation, Shumin Fang, Siwei Wang, Kyle S. Brinkman, Fanglin Chen

Faculty Publications

BaZr0.8Y0.2O3−δ (BZY) is an excellent candidate material for hydrogen permeation membranes due to its high bulk proton conductivity, mechanical robustness, and chemical stability in H2O- and CO2-containing environments. Unfortunately, the use of BZY as a separation membrane has been greatly restrained by its highly refractory nature, poor grain boundary proton conductivity, high number of grain boundaries resulting from limited grain growth during sintering, as well as low electronic conductivity. These problems can be resolved by the fabrication of a Ni–BZY composite membrane with large BZY grains, which requires the development …


Functionalization Of Carbon Nanotube Yarn By Acid Treatment, Heath E. Misak, Ramazan Asmatulu, Mat O'Malley, Emil Jurak, Shankar Mall Apr 2014

Functionalization Of Carbon Nanotube Yarn By Acid Treatment, Heath E. Misak, Ramazan Asmatulu, Mat O'Malley, Emil Jurak, Shankar Mall

Faculty Publications

Carbon nanotube (CNT) yarn was functionalized using sulfuric and nitric acid solutions in 3:1 volumetric ratio. Successful functionalization of CNT yarn with carboxyl and hydroxyl groups (e.g., COOH, COO–, OH, etc.) was confirmed by attenuated total reflectance spectroscopy. X-ray diffraction revealed no significant change to the atomic in-plane alignment in the CNTs; however, the coherent length along the diameter was significantly reduced during functionalization. A morphology change of wavy extensions protruding from the surface was observed after the functionalization treatment. The force required to fracture the yarn remained the same after the functionalization process; however, the linear density was increased …


Investigation Of The High-Temperature Redox Chemistry Of Sr2Fe1.5Mo0.5O6-Δ Via In Situ Neutron Diffraction, Daniel E. Bugaris, Jason P. Hodges, Ashfia Hug, W. Michael Chance, Andreas Heyden, Fanglin Chen, Hans-Conrad Zur Loye Mar 2014

Investigation Of The High-Temperature Redox Chemistry Of Sr2Fe1.5Mo0.5O6-Δ Via In Situ Neutron Diffraction, Daniel E. Bugaris, Jason P. Hodges, Ashfia Hug, W. Michael Chance, Andreas Heyden, Fanglin Chen, Hans-Conrad Zur Loye

Faculty Publications

Crystallographic structural changes were investigated for Sr2Fe1.5Mo0.5O6−δ, an electrode material for symmetric solid oxide fuel cells. The samples of this material were heated and cooled in wet hydrogen and wet oxygen atmospheres, to simulate the reducing and oxidizing conditions experienced under actual fuel cell operating conditions, and their structures and oxygen contents were determined using in situ powder neutron diffraction. The existence of a reversible tetragonal to cubic phase transition was established to occur between room temperature and 400 °C, both on heating and cooling in either oxygen or hydrogen. The …


Mos2 Functionalization For Ultra-Thin Atomic Layer Deposited Dielectrics, Angelica Azcatl, Stephen Mcdonnell, Santosh Kc, Xin Peng, Hong Dong, Xiaoye Qin, Rafik Addou, Greg Mordi, Ning Lu, Jiyoung Kim, Moon Kim, Kyeongjae Cho, Robert Wallace Mar 2014

Mos2 Functionalization For Ultra-Thin Atomic Layer Deposited Dielectrics, Angelica Azcatl, Stephen Mcdonnell, Santosh Kc, Xin Peng, Hong Dong, Xiaoye Qin, Rafik Addou, Greg Mordi, Ning Lu, Jiyoung Kim, Moon Kim, Kyeongjae Cho, Robert Wallace

Faculty Publications

The effect of room temperature ultraviolet-ozone (UV-O3) exposure of MoS2 on the uniformity of subsequent atomic layer deposition of Al2O3 is investigated. It is found that a UV-O3 pre-treatment removes adsorbed carbon contamination from the MoS2 surface and also functionalizes the MoS2 surface through the formation of a weak sulfur-oxygen bond without any evidence of molybdenum-sulfur bond disruption. This is supported by first principles density functional theory calculations which show that oxygen bonded to a surface sulfur atom while the sulfur is simultaneously back-bonded to three molybdenum atoms is a thermodynamically favorable configuration. The adsorbed oxygen increases the reactivity of …


Triplet Ground State Of The Neutral Oxygen-Vacancy Donor In Rutile Tio2, A. T. Brant, Eric M. Golden, Nancy C. Giles, Shan Yang, M. A. R. Sarker, S. Watauchi, M. Nagao, I. Tanaka, D. A. Tryk, A. Manivannan, Larry E. Halliburton Mar 2014

Triplet Ground State Of The Neutral Oxygen-Vacancy Donor In Rutile Tio2, A. T. Brant, Eric M. Golden, Nancy C. Giles, Shan Yang, M. A. R. Sarker, S. Watauchi, M. Nagao, I. Tanaka, D. A. Tryk, A. Manivannan, Larry E. Halliburton

Faculty Publications

Electron paramagnetic resonance (EPR) is used to investigate the triplet (S = 1) ground state of the neutral oxygen vacancy in bulk rutile TiO2 crystals. This shallow donor consists of an oxygen vacancy with two nearest-neighbor, exchange-coupled 3+ ions located along the [001] direction and equidistant from the vacancy. The spins of the two trapped electrons, one at each 3+ ion, align parallel to give the S = 1 state. These neutral oxygen vacancies are formed near 25 K in as-grown oxidized TiO2 crystals by illuminating with sub-band-gap 442 nm laser light. The angular dependence of the EPR …


Electronic Properties Of Inp (001)/Hfo2 (001) Interface: Band Offsets And Oxygen Dependence, Santosh Kc Jan 2014

Electronic Properties Of Inp (001)/Hfo2 (001) Interface: Band Offsets And Oxygen Dependence, Santosh Kc

Faculty Publications

Using ab-initio methods, atomic structures and electronic properties of InP (001)/HfO2 (001) interface are studied within the framework of density functional theory. We examine the InP/HfO2 model interface electronic structures under varying oxidation conditions. The effects of indium and phosphorous concentrations on interfacial bonding, defect states, band offsets, and the thermodynamic stability at the interface are also investigated. The origin of interfacial gap states in InP (001)/HfO2 (001) interface are proposed, mainly from the P-rich oxides, which is validated by our experimental work. This highlights the importance of surface passivation prior to high-κ deposition based on the in situ spectroscopic …


Design, Fabrication, And Properties Of 2-2 Connectivity Cement/Polymer Based Piezoelectric Composites With Varied Piezoelectric Phase Distribution, Xu Dongyu, Cheng Xin, Sourav Banerjee, Huang Shifeng Jan 2014

Design, Fabrication, And Properties Of 2-2 Connectivity Cement/Polymer Based Piezoelectric Composites With Varied Piezoelectric Phase Distribution, Xu Dongyu, Cheng Xin, Sourav Banerjee, Huang Shifeng

Faculty Publications

The laminated 2-2 connectivity cement/polymer based piezoelectric composites with variedpiezoelectric phase distribution were fabricated by employing Lead Zirconium Titanate ceramicas active phase, and mixture of cement powder, epoxy resin, and hardener as matrix phase with a mass proportion of 4:4:1. The dielectric, piezoelectric, and electromechanical coupling properties of the composites were studied. The composites with large total volume fraction ofpiezoelectric phase have large piezoelectric strain constant and relative permittivity, and thepiezoelectric and dielectric properties of the composites are independent of the dimensional variations of the piezoelectric ceramic layer. The composites with small total volume fraction of piezoelectric phase have large …


In-Situ Study Of E-Beam Al And Hf Metal Deposition On Native Oxide Inp (100), H. Dong, Santosh Kc, A. Azcatl, W. Cabrera, X. Qin, B. Brennan, D. Zhernokletov, K. Cho, R. Wallace Nov 2013

In-Situ Study Of E-Beam Al And Hf Metal Deposition On Native Oxide Inp (100), H. Dong, Santosh Kc, A. Azcatl, W. Cabrera, X. Qin, B. Brennan, D. Zhernokletov, K. Cho, R. Wallace

Faculty Publications

The interfacial chemistry of thin Al (∼3 nm) and Hf (∼2 nm) metal films deposited by electron beam (e-beam) evaporation on native oxide InP (100) samples at room temperature and after annealing has been studied by in situ angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The In-oxides are completely scavenged forming In-In/In-(Al/Hf) bonding after Al and Hf metal deposition. The P-oxide concentration is significantly decreased, and the P-oxide chemical states have been changed to more P-rich oxides upon metal deposition. Indium diffusion through these metals before and after annealing at 250 °C has also been characterized. …


A Clamped Dual-Ridged Waveguide Measurement System For The Broadband, Nondestructive Characterization Of Sheet Materials, Milo W. Hyde Iv, Michael J. Havrilla Oct 2013

A Clamped Dual-Ridged Waveguide Measurement System For The Broadband, Nondestructive Characterization Of Sheet Materials, Milo W. Hyde Iv, Michael J. Havrilla

Faculty Publications

A novel two-port probe which uses dual-ridged waveguides for the nondestructive, broadband characterization of sheet materials is presented. The new probe is shown to possess approximately 2 to 3 times the bandwidth of traditional coaxial and rectangular/circular waveguide probe systems while maintaining the structural robustness characteristic of rectangular/circular waveguide probe systems. The theoretical development of the probe is presented, namely, by applying Love’s equivalence theorem and enforcing the continuity of transverse fields at the dual-ridged waveguide apertures, a system of coupled magnetic field integral equations is derived. The system of coupled magnetic field integral equations is solved using the method …


In Situ Study Of The Role Of Substrate Temperature During Atomic Layer Deposition Of Hfo2 On Inp, H. Dong, Santosh Kc, X. Qin, B. Brennan, S. Mcdonnell, D. Zhernokletov, C. Hinkle, J. Kim, K. Cho, R. Wallace Oct 2013

In Situ Study Of The Role Of Substrate Temperature During Atomic Layer Deposition Of Hfo2 On Inp, H. Dong, Santosh Kc, X. Qin, B. Brennan, S. Mcdonnell, D. Zhernokletov, C. Hinkle, J. Kim, K. Cho, R. Wallace

Faculty Publications

The dependence of the “self cleaning” effect of the substrate oxides on substrate temperature during atomic layer deposition (ALD) of HfO2 on various chemically treated and native oxide InP (100) substrates is investigated using in situ X-ray photoelectron spectroscopy. The removal of In-oxide is found to be more efficient at higher ALD temperatures. The P oxidation states on native oxide and acid etched samples are seen to change, with the total P-oxide concentration remaining constant, after 10 cycles of ALD HfO2 at different temperatures. An (NH4)2 S treatment is seen to effectively remove native oxides and passivate the InP surfaces …


Enhanced Reducibility And Conductivity Of Na/K-Doped Srti0.8Nb0.2O3, Guoliang Xiao, Sirikanda Nuansaeng, Lei Zhang, Suwit Suthirakun, Andreas Heyden, Hans-Conrad Zur Loye, Fanglin Chen Sep 2013

Enhanced Reducibility And Conductivity Of Na/K-Doped Srti0.8Nb0.2O3, Guoliang Xiao, Sirikanda Nuansaeng, Lei Zhang, Suwit Suthirakun, Andreas Heyden, Hans-Conrad Zur Loye, Fanglin Chen

Faculty Publications

Donor and acceptor co-doped SrTiO3 materials have shown interesting features in their conductivity and reducibility. In this work, 10 mol% Na+ or K+ as acceptor dopants have been introduced into the A-site of donor-doped strontium titanate, SrTi0.8Nb0.2O3, and the doping impact on their properties has been studied. By doping with Na or K, the sinterability of SrTi0.8Nb0.2O3 in reducing atmospheres has been improved. Na0.1Sr0.9Ti0.8Nb0.2O3 and K0.1Sr0.9Ti0.8Nb0.2O3 show metallic …


Indium Diffusion Through High-K Dielectrics In High-K/Inp Stacks, H. Dong, W. Cabrera, R. Galatage, Santosh Kc, B. Brennan, X. Qin, S. Mcdonnell, D. Zhernokletov, C. Hinkle, K. Cho, Y. Chabal, R. Wallace Aug 2013

Indium Diffusion Through High-K Dielectrics In High-K/Inp Stacks, H. Dong, W. Cabrera, R. Galatage, Santosh Kc, B. Brennan, X. Qin, S. Mcdonnell, D. Zhernokletov, C. Hinkle, K. Cho, Y. Chabal, R. Wallace

Faculty Publications

Evidence of indium diffusion through high-k dielectric (Al2O3 and HfO2) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a POx rich interface.High mobility III-V channel materials are contenders to replace Si in semiconductor devices like metal oxide semiconductor filed effect transistors (MOSFETs) for the sub 22 nm technology node.1 Extensive research is being carried out to determine the validity of these III-V materials for use as the channel, in a variety of …