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Articles 1 - 8 of 8
Full-Text Articles in Mechanics of Materials
Ultra Wide Band Gap Oxides For Advanced Optoelectronics And Supercapacitor Applications: A Case Study Of Intrinsic And Doped Germanium Dioxide, Paul Gaurav Nalam
Ultra Wide Band Gap Oxides For Advanced Optoelectronics And Supercapacitor Applications: A Case Study Of Intrinsic And Doped Germanium Dioxide, Paul Gaurav Nalam
Open Access Theses & Dissertations
Germanium dioxide (GeO2) is a metal oxide semiconductor with multiple polymorphs that has recently garnered a significant amount of scientific attention owing to its novel ultra-wide band gap and pseudo-capacitive properties, which can potentially transcend current power electronic, optoelectronic, and supercapacitor technologies. However, due to the difficulty in the synthesis of stable crystalline phases of individual polymorphs of GeO2 thin films, this material system demands complex and resource-intensive deposition techniques to synthesize. An attempt was made to develop cost-effective and scalable deposition techniques to stabilize specific crystalline phases of GeO2 thin films. These phases were further structurally fine-tuned to state …
Self-Assembly Of Exfoliated Graphene Flakes As Anticorrosive Coatings For Additive Manufactured Steels, Kaleb Hood, Wen Qian, Yi Xia, Savannah Krupa, Annie Dao, Sarah Ahmed, Samuel Olson, Nam Nguyen, Joseph A. Turner, Jun Jiao
Self-Assembly Of Exfoliated Graphene Flakes As Anticorrosive Coatings For Additive Manufactured Steels, Kaleb Hood, Wen Qian, Yi Xia, Savannah Krupa, Annie Dao, Sarah Ahmed, Samuel Olson, Nam Nguyen, Joseph A. Turner, Jun Jiao
Department of Mechanical and Materials Engineering: Faculty Publications
This study demonstrates the feasibility of using liquid exfoliation of expandable graphite into multilayer exfoliated graphene flakes (EGFs) to form a self-assembled thin film on an air–water interface. The film can coat the surface of additive manufactured (AM) steel substrates to enhance surface properties, specifically AM 316 stainless-steel (AM316), AM 8620 steel (AM8620), and samples of the same alloys made by conventional manufacturing (CM) processes. Liquid exfoliation offers a high yield route for an EGF coating that can cover up to 95% of the sample surface with a single application. The thin, flexible EGFs can coat a rough AM metal …
Deformation Correlations And Machine Learning: Microstructural Inference And Crystal Plasticity Predictions, Michail Tzimas
Deformation Correlations And Machine Learning: Microstructural Inference And Crystal Plasticity Predictions, Michail Tzimas
Graduate Theses, Dissertations, and Problem Reports (ETD)
The present thesis makes a connection between spatially resolved strain correlations and material processing history. Such correlations can be used to infer and classify prior deformation history of a sample at various strain levels with the use of Machine Learning approaches. A simple and concrete example of uniaxially compressed crystalline thin films of various sizes, generated by two-dimensional discrete dislocation plasticity simulations is examined. At the nanoscale, thin films exhibit yield-strength size effects with noisy mechanical responses which create an interesting challenge for the application of Machine Learning techniques. Moreover, this thesis demonstrates the prediction of the average mechanical responses …
Structural, Optical And Electrical Properties Of Yttrium-Doped Hafnium Oxide Nanocrystalline Thin Films, Abhilash Kongu
Structural, Optical And Electrical Properties Of Yttrium-Doped Hafnium Oxide Nanocrystalline Thin Films, Abhilash Kongu
Open Access Theses & Dissertations
Hafnium oxide (HfO2) has emerged as the most promising high-k dielectric for Metal-Oxide-Semiconductor (MOS) devices and has been highlighted as the most suitable dielectric materials to replace silicon oxide because of its comprehensive performance. In the present research, yttrium-doped HfO2 (YDH) thin films were fabricated using RF magnetron sputter deposition onto Si (100) and quartz with a variable thickness. Cross-sectional scanning electron microscopy coupled with Filmetrics revealed that film thickness values range from 700 A° to 7500 A°. Electrical properties such as AC Resistivity and current-voltage (I-V) characteristics of YDH films were studied. YDH films that were relatively thin (<1500 A°) crystallized in monoclinic phase while thicker films crystallized in cubic phase. The band gap (Eg) of the films was calculated from the optical measurements. The band gap was found to be ∼5.60 eV for monoclinic while it is ∼6.05 eV for cubic phase of YDH films. Frequency dependence of the electrical resistivity (ρac) and the total conductivity of the films were measured. Resistivity decreased (by three orders of magnitude) with increasing frequency from 100 Hz to 1 MHz, attributed due to the hopping mechanism in YDH films. Whereas, while ρac∼1Ω-m at low frequencies (100 Hz), it decreased to ∼ 104 Ω-cm at higher frequencies (1 MHz). Aluminum (Al) metal electrodes were deposited to fabricate a thin film capacitor with YDH layer as dielectric film thereby employing Al-YDH-Si capacitor structure. The results indicate that the capacitance of the films decrease with increasing film thickness. A detailed analysis of the electrical characteristics of YDH films is presented.
Structure And Electronic Properties Of Pure And Nitrogen Doped Nanocrystalline Tungsten Oxide Thin Films, Vemnkata Rama Sesha Ravi Kumar Vemuri
Structure And Electronic Properties Of Pure And Nitrogen Doped Nanocrystalline Tungsten Oxide Thin Films, Vemnkata Rama Sesha Ravi Kumar Vemuri
Open Access Theses & Dissertations
Tungsten oxide (WO3) is a multifunctional material which has applications in electronics, sensors, optoelectronics, and energy-related technologies. Recently, electronic structure modification of WO3 to design novel photocatalysts has garnered significant attention. However, a fundamental understanding of nitrogen induced changes in the structure, morphology, surface/interface chemistry, and electronic properties of WO3 is a prerequisite to producing materials with the desired functionality and performance. Also, understanding the effect of thermodynamic and processing variables is highly desirable in order to derive the structure-property relationships in the W-O/W-O-N material system. The present work was, therefore, focused on studying the effects …
A Study Of Wo3 And W0.95ti0.05o3 Thin Films Using Comparative Spectroscopy, James Heyward Howard
A Study Of Wo3 And W0.95ti0.05o3 Thin Films Using Comparative Spectroscopy, James Heyward Howard
Open Access Theses & Dissertations
Tungsten oxide (WO3) is important and well-studied in materials science, particularly for sensor applications. In this research work, we consider the innovation of adding Ti to thin films of this material. Since the characteristics of any such material are strongly dependent on the conditions and methods used in its deposition, the main objective of this project is to provide a detailed spectroscopic characterization by Raman scattering, infrared absorption, and X-ray photoelectron spectroscopy (XPS) of WO3 and of W0.95Ti0.05O3. This characterization will be based on comparison of the morphology and composition of WO3-based thin films, grown by radio frequency magnetron reactive …
A Finite Element Study Of Piezoelectric Thin Films On Substrates, Bo Liu
A Finite Element Study Of Piezoelectric Thin Films On Substrates, Bo Liu
Theses and Dissertations
The overall goal of this work has been mainly to advance the understanding of the degradation in the response of piezoelectric thin films after they are deposited on substrates. To have better understanding of the difference in the response between free standing piezoelectric films and those deposited on a substrate, we calculated the normalized "effective" piezoelectric coefficients for BT/MgO, PZT/STO and ZnO/STO respectively. We also studied the impact on the effective coefficients due to the components of the bulk material's piezoelectric coefficients. After studying the clamping effects of the substrate, lattice mismatch, stiffness of the films and the substrates, we …
Growth And Properties Of Chemically Deposited Cds Thin Films, Edward A. Gluszak
Growth And Properties Of Chemically Deposited Cds Thin Films, Edward A. Gluszak
Theses : Honours
Polycrystalline thin films of undoped CdS and In doped CdS (i.e. CdS:In) have been deposited by chemical bath on glass slides and high purity silicon wafers. The effect of different processing conditions (e.g. substrate temperature, doping and air annealing) on film growth, optical transmittance and electrical properties were correlated with the film microstrucutre. The mechanism of chemical bath deposition of CdS thin films from the ammonia-thiourea system is studied. The influence of reaction parameters (i.e. concentration of reactants and pH) on film growth were determined and modeled. Thin film growth is thermally activated with an energy ≈ 5 x 10 …