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Articles 1 - 6 of 6
Full-Text Articles in Nanotechnology Fabrication
Carrier Transport Engineering In Wide Bandgap Semiconductors For Photonic And Memory Device Applications, Ravi Teja Velpula
Carrier Transport Engineering In Wide Bandgap Semiconductors For Photonic And Memory Device Applications, Ravi Teja Velpula
Dissertations
Wide bandgap (WBG) semiconductors play a crucial role in the current solid-state lighting technology. The AlGaN compound semiconductor is widely used for ultraviolet (UV) light-emitting diodes (LEDs), however, the efficiency of these LEDs is largely in a single-digit percentage range due to several factors. Until recently, AlInN alloy has been relatively unexplored, though it holds potential for light-emitters operating in the visible and UV regions. In this dissertation, the first axial AlInN core-shell nanowire UV LEDs operating in the UV-A and UV-B regions with an internal quantum efficiency (IQE) of 52% are demonstrated. Moreover, the light extraction efficiency of this …
Nanowire-Based Light-Emitting Diodes: A New Path Towards High-Speed Visible Light Communication, Mohsen Nami
Nanowire-Based Light-Emitting Diodes: A New Path Towards High-Speed Visible Light Communication, Mohsen Nami
Physics & Astronomy ETDs
Nano-scale optoelectronic devices have gained significant attention in recent years. Among these devices are semiconductor nanowires, whose dimeters range from 100 to 200 nm. Semiconductor nanowires can be utilized in many different applications including light-emitting diodes and laser diodes. Higher surface to volume ratio makes nanowire-based structures potential candidates for the next generation of photodetectors, sensors, and solar cells. Core-shell light-emitting diodes based on selective-area growth of gallium nitride (GaN) nanowires provide a wide range of advantages. Among these advantages are access to non-polar m-plane sidewalls, higher active region area compared to conventional planar structures, and reduction of threading …
Simulating Nanowires And Ultra-Thin Body Transistors Using Nemo5 On Nanohub.Org, Liang Yuan Dai, James E. Fonseca, Chu Yuan Chen, Gerhard Klimeck
Simulating Nanowires And Ultra-Thin Body Transistors Using Nemo5 On Nanohub.Org, Liang Yuan Dai, James E. Fonseca, Chu Yuan Chen, Gerhard Klimeck
The Summer Undergraduate Research Fellowship (SURF) Symposium
During the past twenty years, the most important aspects of semiconductor electronics have advanced into the nanometer range, resulting in exponential increases of microprocessor computing performance. As the size of electrical components continues to shrink, the cost of experimental research and industrial fabrication in this field has increased dramatically. Thus, the development of accurate nanoscale model simulations becomes necessary as a measure to decrease the high financial expenses of advancing semiconductor technology. This simulator supports atomistic modeling in order to provide an accurate description of the nanoscale devices, as current electrical components operate in the quantum regime and are affected …
Investigation Of Cds Nanowires And Planar Films For Enhanced Performance As Window Layers In Cds-Cdte Solar Cell Devices, Jianhao Chen
Investigation Of Cds Nanowires And Planar Films For Enhanced Performance As Window Layers In Cds-Cdte Solar Cell Devices, Jianhao Chen
Theses and Dissertations--Electrical and Computer Engineering
Cadmium sulfide (CdS) and cadmium telluride (CdTe) are two leading semiconductor materials used in the fabrication of thin film solar cells of relatively high power conversion efficiency and low manufacturing cost. In this work, CdS/CdTe solar cells with a varying set of processing parameters and device designs were fabricated and characterized for comparative evaluation. Studies were undertaken to elucidate the effects of (i) each step in fabrication and (ii) parameters like thickness, sheet resistance, light absorptivity solution concentration, inert gas pressure etc. Best results were obtained when the thickness of CdS planar film for the window layer was in the …
Nanoscale Contacts Between Semiconducting Nanowires And Metallic Graphenes, Seongmin Kim, David B. Janes, Sung-Yool Choi, Sanghyun Ju
Nanoscale Contacts Between Semiconducting Nanowires And Metallic Graphenes, Seongmin Kim, David B. Janes, Sung-Yool Choi, Sanghyun Ju
Birck and NCN Publications
Metal–semiconductor (M–S) junctions are important components in many semiconductor devices, and there is growing interest in realizing high quality M–S contacts that are optically transparent. In this paper, we present our investigations into the characteristics of M–S junction in a semiconducting ZnO nanowire that was directly grown on a multilayer graphene film (MGF). The synthesized nanowires were fabricated into two-terminal devices with MGF as one contact and Al as the other contact. By comparison with devices employing Al contacts at both ends, the nanowire resistivity and specific contact resistivity of the MGF–nanowire contact can be extracted. The extracted specific contact …
Nanoindentation And Plasticity In Nanocrystalline Ni Nanowires: A Case Study In Size Effect Mitigation, F. Sansoz, Virginie Rollin
Nanoindentation And Plasticity In Nanocrystalline Ni Nanowires: A Case Study In Size Effect Mitigation, F. Sansoz, Virginie Rollin
Publications
We examine the processes of spherical indentation and tension in Ni nanowires and thin films containing random distributions of nanoscale grains by molecular dynamics simulations. It is shown that the resistance to nanoindentation of nanocrystalline Ni nanowires with diameters of 12 and 30 nm tends not to depend on the wire diameter and free surfaces, contrary to nanoindentation in single-crystalline nanowires. Accommodation of plastic deformation by grain boundary sliding suggests a mitigation strategy for sample boundary effects in nanoscale plasticity.