Nanotechnology Fabrication Commons^™

Development Of Alternative Plasma Etching Techniques For The Selective Removal Of Tan With Respect To Sioch Dielectric Materials To Enable Future Back-End-Of-The-Line Scaling, Ivo Otto Iv

Electronic Theses & Dissertations (2024 - present)

Transistor scaling has continued according to Moore’s Law for over fifty years. As transistor size decreases, adequate power delivery is required to enable transistor scaling without performance loss. Power delivery is provided by a metal interconnect network with insulating dielectric that connects the transistor level to the power source, the signal speed within this metal line network limiting transistor level switching speeds. Reduction of signal delay has moved from primarily dimension-based improvement towards adoption of conductor and dielectric materials with lower resistivity and a reduced dielectric constant value, respectively: transitioning from Al/SiO₂ to Cu/low-κ SiOCH. With this transition comes …

Next-Generation Computing Hardware: Advancements In Tantalum Oxide Reram For Ai And Neuromorphic Applications, Rajas Ravindra Mathkari

Electronic Theses & Dissertations (2024 - present)

The rapid development of artificial intelligence, machine learning, and data-intensive computing has exposed the fundamental limitations of conventional von Neumann architectures, in which energy and time are continuously lost transferring data between physically separate memory and processing units. In contrast, the human brain performs complex computations directly at the point of memory storage through billions of parallel synaptic connections, a paradigm known as in-memory computing. Realizing this in hardware requires memory devices that are fast, energy-efficient, non-volatile, and capable of storing multiple resistance levels in an analog manner. Resistive Random Access Memory (ReRAM) based on tantalum oxide (TaOx) is one …

Investigation Of Fine-Grain Cu And Cu Alloys For Low-Temperature Hybrid Bonding Applications, Sarabjot Singh

Electronic Theses & Dissertations (2024 - present)

Hybrid bonding has emerged as a key enabler for next-generation three-dimensional (3D) integration, offering fine-pitch interconnects and improved electrical performance. However, conventional Cu–Cu hybrid bonding typically requires elevated temperatures to achieve sufficient diffusion and interface quality, posing challenges for temperature-sensitive device integration and process compatibility. This work investigates materials engineering approaches to enable low-temperature Cu–Cu bonding through both microstructure design and alloying strategies.

This work begins by examining grain refinement in Cu as a pathway to enhance diffusion through increased grain boundary density, providing efficient atomic transport without introducing additional elements. Three Cu-based systems Cu–Co, Cu–Ag, and Cu–Al were systematically …

Nanostructured Cathode Catalysts For Aem Electrolysis: From Catalyst Design To Degradation And Hydrogen Dynamics, Yamini Kumaran

Electronic Theses & Dissertations (2024 - present)

Anion exchange membrane water electrolysis (AEMWE) presents a promising pathway toward cost-effective and sustainable hydrogen production by integrating the chemical robustness of alkaline systems with the compact, zero-gap design of proton exchange membrane electrolyzers. However, the widespread implementation of AEMWE is limited by the availability of highly active and durable platinum-group-metal (PGM)-free catalysts and by an incomplete understanding of their degradation behavior under realistic operating conditions.

This dissertation focuses on the development, characterization, and mechanistic investigation of nanostructured MoNi₄–MoO₂-based electrodes for efficient and stable hydrogen generation under alkaline and membrane-integrated environments. MoNi₄–MoO₂ nanorods …

Advancing 4h-Silicon Carbide Power Mosfets Through Three-Dimensional Technology Computer Aided Design Optimization, Skylar A. Deboer

Electronic Theses & Dissertations (2024 - present)

This research contributes to the advancement of 1.2 kV 4H-Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) through the development and implementation of sophisticated three-dimensional Technology Computer-Aided Design (3D TCAD) methodologies. These advanced simulation techniques enable comprehensive evaluation of innovative unit cell architectures that remain inaccessible to conventional two-dimensional (2D) TCAD approaches. By leveraging these 3D simulation capabilities, this work facilitates significant improvements in both the performance and reliability of next-generation wide-bandgap power devices.

Power devices convert electrical energy between different forms throughout the power grid making them essential in applications ranging from personal electronics, electric vehicles, renewable energy systems, industrial …

Epitaxial Quantum Dot Scintillators With Monolithic Photodetector Integration: Physics, Fabrication And Characterization Of Materials And Devices, Allan Oreave Minns

Electronic Theses & Dissertations (2024 - present)

This dissertation discloses the physics, fabrication, and characterization of high-performance scintillator detectors based on epitaxial InAs quantum dots (QDs) in GaAs. The detector crystals grown include monolithically integrated In_0.35GaAs photodetectors with Al_0.92-0.6In_0.03-0.35Ga_0.05As metamorphic buffer layers (MBL). A device fabrication process was developed for the lithographic patterning, chemical etching, contact metallization and readout integration of materials grown by means of molecular beam epitaxy (MBE) on 3-inch GaAs (001) wafers. Low capacitance integration with readout electronics was achieved through wire bonds to custom printed circuit boards (PCBs) with commercial components.

The relationship between device …