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Articles 1 - 16 of 16
Full-Text Articles in Nanotechnology Fabrication
Exploratory Study Of Semiconductor Nanomembranes In Em Applications, Grant D. Heileman
Exploratory Study Of Semiconductor Nanomembranes In Em Applications, Grant D. Heileman
Electrical and Computer Engineering ETDs
Antenna systems are a cornerstone of modern technologies, playing an increasingly vital role in their advancement. As demand for compact, high-performance, and adaptable communication platforms grows reconfigurable antenna technologies are becoming essential. This research explores a novel front-end reconfigurable antenna system (FERAS) architecture that leverages the mechanical flexibility and photoconductive behavior of semiconductor nanomembrane (SNM) devices. By exploiting the emergent properties of ultra-thin silicon (Si) or gallium arsenide (GaAs) nanomaterials and optically exciting these samples using vertical-cavity surface-emitting laser (VCSEL) arrays, this study develops lightweight, low-cost, deployable antenna structures for satellite communications, remote sensing, GPS, and radar. Despite their significant …
Design Of A Subthreshold Cmos Inverter-Based Amplifier For Low-Noise And Low-Power Applications, Landon Alexander Schmucker
Design Of A Subthreshold Cmos Inverter-Based Amplifier For Low-Noise And Low-Power Applications, Landon Alexander Schmucker
Electrical and Computer Engineering ETDs
Amplification is a fundamental function in most analog circuits. There is a fast-growing demand for low-power, low-noise, and high-gain amplifiers. Modern semiconductor processes are increasingly optimized for digital applications, which has introduced new challenges in analog design. To address these challenges, analog designers have investigated replacing conventional analog circuits with digital implementations. One promising application is the typical CMOS inverter as an amplifier.
This research presents a CMOS inverter-based amplifier with feedback designed to achieve low power consumption, low input noise, and high gain. Unlike typical CMOS inverter-based amplifiers, this topology has two distinctive features: (1) it uses a MOSFET …
Ge/Sige Quantum Wells: Material For The Post-Moore Era, Troy Alexander Hutchins-Delgado
Ge/Sige Quantum Wells: Material For The Post-Moore Era, Troy Alexander Hutchins-Delgado
Optical Science and Engineering ETDs
This dissertation demonstrates high-quality germanium quantum wells on a 200 mm silicon wafer platform, enabling novel device possibilities. Partnering with a commercial silicon-germanium epitaxy supplier, we obtained shallow, undoped germanium quantum wells with high-crystalline quality, confirmed through x-ray diffraction, secondary ion mass spectroscopy, high-resolution scanning transmission electron microscopy, and energy dispersive x-ray spectroscopy. Hall bar devices fabricated on single quantum wells revealed that surface preparation can tune transport properties while maintaining peak mobilities around 105 cm2V−1s−1. Manganese-germanide spintronic contacts were integrated via solid-state reaction, with contact quality assessed through Schottky diodes, transfer length …
Fabrication And Characterization Of A Monolithic Photonic Integrated Circuit With High-Aspect Ratio Photonic Device Structures, Sami A. Nazib
Fabrication And Characterization Of A Monolithic Photonic Integrated Circuit With High-Aspect Ratio Photonic Device Structures, Sami A. Nazib
Optical Science and Engineering ETDs
The focus of this work was to create a process to fabricate an InP-based Photonic Integrated Circuit (PIC). The design of the PIC required the photonic components of this device to be created by deep etching of an epitaxially-grown multilayer structure. Therefore, a novel dry etching process was developed to produce very high aspect- ratio (HAR) features. This process not only involved the development of dry etch chemistry but also the engineering of a metal mask structure. The next step of the challenge was to use a polymer-based material that would have two functions: cladding for the etched photonic components …
Engineering Composite Gridlines For Improved Solar Module Reliability, Andre Chavez
Engineering Composite Gridlines For Improved Solar Module Reliability, Andre Chavez
Electrical and Computer Engineering ETDs
Renewable energy sources, such as solar power, are rapidly expanding worldwide to meet increased energy demands. However, these sources are exposed to challenging environmental stressors, such as extreme wind, heavy snow loads, and hailstorms that can cause irreversible damage to the crystalline semiconductor solar cells. Today, single crystalline silicon solar cells dominate the market, and our work is focused on improving their reliability against environmental stressors. One of the main degradation mechanisms caused by environmental stressors is cell cracks. These microcracks can go virtually undetected and lead to reduced power output from solar modules over time. To solve this engineering …
Void-Semiconductor Gaas Photonic Crystal Surface-Emitting Lasers By Epitaxial Regrowth And Single-Epitaxy Methods, Kevin James Reilly
Void-Semiconductor Gaas Photonic Crystal Surface-Emitting Lasers By Epitaxial Regrowth And Single-Epitaxy Methods, Kevin James Reilly
Nanoscience and Microsystems ETDs
Monolithic semiconductor lasers including edge-emitting lasers (EELs) and vertical-cavity surface-emitting lasers (VCSELs) fail to realize simultaneous achievement of both high-power high-quality beams due to intrinsic limitations of their resonant cavity. Photonic crystal surface emitting lasers (PCSELs) address these structural limitations through employment of a two-dimensional photonic crystal (PC) cavity that creates feedback at a single wavelength for laterally scalable devices. This function of the PC allows PCSELs to power scale with area while maintaining single-mode emission required for diffraction-limited beams. In this way, PCSELs fulfill an industry demand for high-power high-quality lasing from a single chip.
Early PCSELs were fabricated …
Material Characterization And Comparison Of Sol-Gel Deposited And Rf Magnetron Deposited Lead Zirconate Titanate Thin Films, Katherine Lynne Miles
Material Characterization And Comparison Of Sol-Gel Deposited And Rf Magnetron Deposited Lead Zirconate Titanate Thin Films, Katherine Lynne Miles
Mechanical Engineering ETDs
Lead zirconate titanate (PZT) has been a material of interest for sensor, actuator, and transducer applications in microelectromechanical systems (MEMS). This is due to their favorable piezoelectric, pyroelectric and ferroelectric properties. While various methods are available to deposit PZT thin films, radio frequency (RF) magnetron sputtering was selected to provide high quality PZT films with the added capability of batch processing. These sputter deposited PZT films were characterized to determine their internal film stress, Young’s modulus, composition, and structure. After characterization, the sputtered PZT samples were poled using corona poling and direct poling methods. As a means of comparison, commercially …
Synthetic Aperture Optical Imaging Interferometric Microscopy With Improved Image Quality, Preyom K. Dey
Synthetic Aperture Optical Imaging Interferometric Microscopy With Improved Image Quality, Preyom K. Dey
Electrical and Computer Engineering ETDs
The resolution limit of optical microscopy can be extended by using Imaging Interferometric Microscopy (IIM), which uses a low numerical aperture (NA) objective lens to achieve resolution equivalent to that of a high-NA objective lens with multiple sub-images. Along with the resolution enhancement challenge, IIM often suffers from poor image quality. In this dissertation, several image quality improvement methods are proposed and verified with simulation and experimental results. Next, techniques to extend the resolution limit of IIM to ≤ 100nm using a low-NA objective lens are demonstrated. An experimental technique of using a grating coupler on …
Optical Angular Scatterometry: In-Line Approach For Roll-2-Roll And Nano-Imprint Fabrication Systems, Juan Jose Faria-Briceno
Optical Angular Scatterometry: In-Line Approach For Roll-2-Roll And Nano-Imprint Fabrication Systems, Juan Jose Faria-Briceno
Electrical and Computer Engineering ETDs
As critical dimensions continue to shrink and structures become more complex, metrology processes are challenging to implement during in-line nanomanufacturing. Non-destructive, non-contact, and high-speed conditions are required to achieve proper metrology processes during in-line manufacturing. Optical scatterometry is a nanoscale metrology tool widely used in integrated circuit manufacturing for characterization and quality control. However, most applications of optical scatterometry operate off-line. A high-speed, in-line, non-contact, non-destructive scatterometry angular system has been demonstrated in this work to scan pattern surfaces during real-time nano-fabrication.
Our system has demonstrated scanning capabilities using flat, 1D and 2D complex structures. The flat surface samples consist …
Pixelated Gasb Membranes For Photovoltaics: Fabrication And Structure-Property Relationships, Vijay Saradhi Mangu
Pixelated Gasb Membranes For Photovoltaics: Fabrication And Structure-Property Relationships, Vijay Saradhi Mangu
Electrical and Computer Engineering ETDs
In this thesis, I present a reliable and efficient approach to heterogeneous integration of single-crystalline GaSb semiconductors with highly mismatched materials. The mismatch may refer to the crystalline structure and the thermal expansion coefficient of single-crystalline GaSb and the other materials of interest. The strategy of hetero-integration relies on epitaxial lift-off. This approach prevents the formation of extended structural defects that are detrimental to the performance of optoelectronic devices and preserves GaSb growth substrates for potential reuse.
Within my research work, I have overcome some outstanding challenges of epitaxial lift-off of GaSb, and I have demonstrated the operation of single-crystalline …
Symmetry And Dopant Diffusion In Inverted Nanopyramid Arrays For Thin Crystalline Silicon Solar Cells, Seok Jun Han
Symmetry And Dopant Diffusion In Inverted Nanopyramid Arrays For Thin Crystalline Silicon Solar Cells, Seok Jun Han
Chemical and Biological Engineering ETDs
In this dissertation, we enhance the efficiency of thin flexible monocrystalline silicon solar cells by breaking symmetry in light trapping nanostructures and improving homogeneity in dopant concentration profile. These thin cells are potentially less expensive than conventional thick silicon cells by using less silicon material and making the cells more convenient to be handled when supported on polymer films. Moreover, these cells are widely applicable due to their flexibility and lightweight. However, for high efficiencies, these cells require effective light trapping and charge collection. We achieve these in cells based on 14-mm-thick free-standing silicon films with light-trapping arrays of nanopyramidal …
Genetic Algorithm Design Of Photonic Crystals For Energy-Efficient Ultrafast Laser Transmitters, Troy A. Hutchins-Delgado
Genetic Algorithm Design Of Photonic Crystals For Energy-Efficient Ultrafast Laser Transmitters, Troy A. Hutchins-Delgado
Shared Knowledge Conference
Photonic crystals allow light to be controlled and manipulated such that novel photonic devices can be created. We are interested in using photonic crystals to increase the energy efficiency of our semiconductor whistle-geometry ring lasers. A photonic crystal will enable us to reduce the ring size, while maintaining confinement, thereby reducing its operating power. Photonic crystals can also exhibit slow light that will increase the interaction with the material. This will increase the gain, and therefore, lower the threshold for lasing to occur. Designing a photonic crystal for a particular application can be a challenge due to its number of …
Tunneling In Si Mos Nanostructures, Amir Shirkhorshidian
Tunneling In Si Mos Nanostructures, Amir Shirkhorshidian
Electrical and Computer Engineering ETDs
In this dissertation, split-gate tunnel barriers in enhancement-mode silicon metal- oxide-semiconductor (MOS) device structures are characterized electrically at liquid helium temperatures (T = 4.2 K) using transport spectroscopy. Tunnel barriers with different gate geometries and barriers implanted with a small number of antimony donor atoms are characterized. Low disorder MOS tunnel barriers are demonstrated and compared to the implanted cases. The ”clean” MOS tunnel barriers are an important proof of principle that disorder free tunnel barriers can be achieved in MOS. The implanted cases provide an important reference for the effects of donors and shallow traps on a MOS tunnel …
Selected Applications Of Silicon Nanopillar Arrays., Behnam Kheyraddini Mousavi
Selected Applications Of Silicon Nanopillar Arrays., Behnam Kheyraddini Mousavi
Electrical and Computer Engineering ETDs
Interaction of optical waves with nanostructures made of various material systems has been the subject of intensive research for many years. These researches have been mainly driven by the need to make smaller optical devices and exploiting the functionalities offered by light-matter interaction in nanoscale. Majority of the nanostructures are fabricated using electron beam (e-beam) lithography that is slow and expensive. As such alternative methods have been developed to enable nanoscale fabrication faster and less expensive. Among these interferometric lithography (IL) is a relatively simple method for quick fabrication of nanostructures. As IL method generates periodic patterns, exploring the potential …
Nanowire-Based Light-Emitting Diodes: A New Path Towards High-Speed Visible Light Communication, Mohsen Nami
Nanowire-Based Light-Emitting Diodes: A New Path Towards High-Speed Visible Light Communication, Mohsen Nami
Physics & Astronomy ETDs
Nano-scale optoelectronic devices have gained significant attention in recent years. Among these devices are semiconductor nanowires, whose dimeters range from 100 to 200 nm. Semiconductor nanowires can be utilized in many different applications including light-emitting diodes and laser diodes. Higher surface to volume ratio makes nanowire-based structures potential candidates for the next generation of photodetectors, sensors, and solar cells. Core-shell light-emitting diodes based on selective-area growth of gallium nitride (GaN) nanowires provide a wide range of advantages. Among these advantages are access to non-polar m-plane sidewalls, higher active region area compared to conventional planar structures, and reduction of threading …
Investigating The Classical And Non-Classical Mechanical Properties Of Gan Nanowires, Mohammad Reza Zamani Kouhpanji
Investigating The Classical And Non-Classical Mechanical Properties Of Gan Nanowires, Mohammad Reza Zamani Kouhpanji
Electrical and Computer Engineering ETDs
Study and prediction of classical and non-classical mechanical properties of GaN is crucial due to the potential application of GaN nanowires (NWs) in piezoelectric, probe-based nanometrology, and nanolithography areas. GaN is mainly grown on sapphire substrates whose lattice constant and thermal expansion coefficient are significantly different from GaN. These discrepancies cause mechanical defects and high residual stresses and strains in GaN, which reduce its quantum efficiency.
Specifically, for nanoscale applications, the mechanical properties of materials differ significantly compared to the bulk properties due to size-effects. Therefore, it is essential to investigate the mechanical properties of GaN NWs using the non-classical …